Abstract: A coater with automatic cleaning function and a coater automatic cleaning method. The coater (100,200,300,400,500,600,700,800) includes a coater chamber (101,201,301,401,501,601,701,801) capable of being filled up with cleaning solution, a substrate chuck (102,202,302,402,502,602,702,802) holding and positioning a substrate (103,203,303,403,503,603,703,803), and at least one shroud (108,208,308,408,508) capable of moving up for preventing photoresist from splashing out of the coater chamber (101,201,301,401,501,601,701,801), or moving down and immersing into the cleaning solution for cleaning.

Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time ?1, or comparing the detected power off time with a preset time ?2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time

Abstract: The present invention provides a method for cleaning substrates comprising the steps of: placing a substrate on a substrate holder; implementing a bubble less or bubble-free pre-wetting process for the substrate; and implementing an ultra/mega sonic cleaning process for cleaning the substrate.

Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.

Abstract: A method for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the method comprising: delivering a cleaning liquid over a surface of a semiconductor wafer during a cleaning process; and imparting sonic energy to the cleaning liquid from a sonic transducer during the cleaning process, wherein power is alternately supplied to the sonic transducer at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, the first predetermined period of time and the second predetermined period of time consecutively following one another, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: A method for effectively cleaning vias (20034), trenches (20036) or recessed areas on a substrate (20010) using an ultra/mega sonic device (1003, 3003, 16062, 17072), comprising: applying liquid (1032) into a space between a substrate (20010) and an ultra/mega sonic device (1003, 3003, 16062, 17072); setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside vias (20034), trenches (20036) or recessed areas on the substrate (20010) increasing to a first set value, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside the vias (20034), trenches (20036) or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate (20010) being cleaned.

Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.

Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time ?1, or comparing the detected power off time with a preset time ?2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time

Abstract: A method for cleaning a semiconductor substrate without damaging its patterned structure via an ultra/mega sonic device comprises applying liquid into a space between the substrate and the sonic device; setting an ultra/mega sonic device power supply at a frequency f1 and power P1; and at zero output before bubble cavitation occurs; followed by at f1 and P1 again after bubble temperature is lowered; detecting power on time (at P1, f1), power off time or amplitude of each waveform output by the power supply; comparing the detected power on time with a preset time T1, power off time with a preset time ?2, amplitude of each waveform with a preset value, if the detected power on time is longer than ?1, or power off time is shorter than ?2, or amplitude of any waveform is larger than the preset value, shut down the power supply and send out an alarm.

Abstract: A method for effectively cleaning vias (20034), trenches (20036) or recessed areas on a substrate (20010) using an ultra/mega sonic device (1003, 3003, 16062, 17072), comprising: applying liquid (1032) into a space between a substrate (20010) and an ultra/mega sonic device (1003, 3003, 16062, 17072); setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside vias (20034), trenches (20036) or recessed areas on the substrate (20010) increasing to a first set value, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside the vias (20034), trenches (20036) or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate (20010) being cleaned.

Abstract: The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.

Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: The present invention provides a method for cleaning substrates comprising the steps of: placing a substrate on a substrate holder; implementing a bubble less or bubble-free pre-wetting process for the substrate; and implementing an ultra/mega sonic cleaning process for cleaning the substrate.

Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Abstract: The present invention discloses a method for effectively cleaning vias, trenches or recessed areas on a substrate using an ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after the ratio of total bubbles volume to volume inside vias, trenches or recessed areas on the substrate increasing to a first set value, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after the ratio of total bubbles volume to volume inside the vias, trenches or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.

Abstract: The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.

Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.