Abstract: The present invention provides a crystal comprising a plurality of silanol compounds of at least one selected from the group consisting of a hexamer represented by following formula (1), an octamer represented by following formula (2), and a decamer represented by following formula (3) and having an interaction via a hydrogen bond by at least one hydroxy group between the silanol compounds.

Abstract: The present invention provides a method for producing a silanol compound capable of efficiently producing a silanol compound. The method for producing a silanol compound includes a proton exchange step of forming a silanol compound having a structure represented by following formula (c) by reacting a silicate having a structure represented by following formula (a) with an acidic compound having an acid dissociation constant pKa of ?1 to 20 in dimethyl sulfoxide (DMSO). (In formula (a), Qi+ represents an i-valent cation and i represents an integer of 1 to 4).

Abstract: The present invention provides a method for producing a silanol compound capable of efficiently producing a silanol compound. The method for producing a silanol compound includes a proton exchange step of forming a silanol compound having a structure represented by following formula (c) by reacting a silicate having a structure represented by following formula (a) with an acidic compound having an acid dissociation constant pKa of ?1 to 20 in dimethyl sulfoxide (DMSO). (In formula (a), Qi+ represents an i-valent cation and i represents an integer of 1 to 4).

Abstract: The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4).

Abstract: The present invention is a silicon-containing resist underlayer film-forming composition containing at least any one of a condensation product and a hydrolysis condensation product or both of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the following general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the following general formula (2). Thereby, there can be provided a resist underlayer film applicable not only to the resist pattern formed of a hydrophilic organic compound obtained by the negative development but also to the resist pattern formed of a hydrophobic compound obtained by the conventional positive development.

Abstract: The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition.

Abstract: A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer.

Abstract: A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution.

Abstract: A conductive pattern-forming composition is obtained by loading a silicone rubber composition comprising a curable organopolysiloxane and a curing agent with conductive submicron particles.

Abstract: In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.

Abstract: Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof.

Abstract: In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.

Abstract: Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof.

Abstract: A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution.

Abstract: A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer.

Abstract: Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100° C. or greater.

Abstract: Provided is an organic silicon oxide fine particle capable of satisfying an expected dielectric constant and mechanical strength and having excellent chemical stability for obtaining a high-performance porous insulating film.

Abstract: Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof.

Abstract: Provided is a method for preparing a siloxane polymer by hydrolysis and condensation reactions of a hydrolyzable silane compound, which has a step of preparing a salt of a silsesquioxane cage compound represented by the following formula (1): (SiO1.5—O)nn?X+n ??(1) wherein, X represents NR4, Rs may be the same or different and each represents a linear or branched C1-4 alkyl group and n is an integer from 6 to 24 and a step of hydrolyzing and condensing the hydrolyzable silane compound with the salt of a silsesquioxane cage compound.

Abstract: In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.