Patents by Inventor Fujio Yagihashi

Fujio Yagihashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240300984
    Abstract: The present invention provides a method for producing a silanol compound capable of efficiently producing a silanol compound. The method for producing a silanol compound includes a proton exchange step of forming a silanol compound having a structure represented by following formula (c) by reacting a silicate having a structure represented by following formula (a) with an acidic compound having an acid dissociation constant pKa of ?1 to 20 in dimethyl sulfoxide (DMSO). (In formula (a), Qi+ represents an i-valent cation and i represents an integer of 1 to 4).
    Type: Application
    Filed: May 14, 2024
    Publication date: September 12, 2024
    Inventors: Masayasu Igarashi, Kazuhiko Sato, Fujio Yagihashi, Tomohiro Matsumoto, Takeshi Nozawa, Shigeru Shimada
  • Patent number: 12024532
    Abstract: The present invention provides a method for producing a silanol compound capable of efficiently producing a silanol compound. The method for producing a silanol compound includes a proton exchange step of forming a silanol compound having a structure represented by following formula (c) by reacting a silicate having a structure represented by following formula (a) with an acidic compound having an acid dissociation constant pKa of ?1 to 20 in dimethyl sulfoxide (DMSO). (In formula (a), Qi+ represents an i-valent cation and i represents an integer of 1 to 4).
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: July 2, 2024
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Masayasu Igarashi, Kazuhiko Sato, Fujio Yagihashi, Tomohiro Matsumoto, Takeshi Nozawa, Shigeru Shimada
  • Publication number: 20220081305
    Abstract: The present invention provides a crystal comprising a plurality of silanol compounds of at least one selected from the group consisting of a hexamer represented by following formula (1), an octamer represented by following formula (2), and a decamer represented by following formula (3) and having an interaction via a hydrogen bond by at least one hydroxy group between the silanol compounds.
    Type: Application
    Filed: October 23, 2019
    Publication date: March 17, 2022
    Inventors: Masayasu IGARASHI, Tomohiro MATSUMOTO, Takeshi NOZAWA, Fujio YAGIHASHI, Kazuhiko SATO
  • Publication number: 20220056056
    Abstract: The present invention provides a method for producing a silanol compound capable of efficiently producing a silanol compound. The method for producing a silanol compound includes a proton exchange step of forming a silanol compound having a structure represented by following formula (c) by reacting a silicate having a structure represented by following formula (a) with an acidic compound having an acid dissociation constant pKa of ?1 to 20 in dimethyl sulfoxide (DMSO). (In formula (a), Qi+ represents an i-valent cation and i represents an integer of 1 to 4).
    Type: Application
    Filed: September 10, 2021
    Publication date: February 24, 2022
    Inventors: Masayasu IGARASHI, Kazuhiko SATO, Fujio YAGIHASHI, Tomohiro MATSUMOTO, Takeshi NOZAWA, Shigeru SHIMADA
  • Publication number: 20210061824
    Abstract: The present invention provides a method for producing a silanol compound capable of efficiently producing a silanol compound. The method for producing a silanol compound includes a proton exchange step of forming a silanol compound having a structure represented by following formula (c) by reacting a silicate having a structure represented by following formula (a) with an acidic compound having an acid dissociation constant pKa of ?1 to 20 in dimethyl sulfoxide (DMSO). (In formula (a), Qi+ represents an i-valent cation and i represents an integer of 1 to 4).
    Type: Application
    Filed: March 5, 2018
    Publication date: March 4, 2021
    Inventors: Masayasu IGARASHI, Kazuhiko SATO, Fujio YAGIHASHI, Tomohiro MATSUMOTO, Takeshi NOZAWA, Shigeru SHIMADA
  • Patent number: 8951917
    Abstract: The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4).
    Type: Grant
    Filed: June 15, 2012
    Date of Patent: February 10, 2015
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takafumi Ueda, Toshiharu Yano, Fujio Yagihashi
  • Patent number: 8715913
    Abstract: The present invention is a silicon-containing resist underlayer film-forming composition containing at least any one of a condensation product and a hydrolysis condensation product or both of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the following general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the following general formula (2). Thereby, there can be provided a resist underlayer film applicable not only to the resist pattern formed of a hydrophilic organic compound obtained by the negative development but also to the resist pattern formed of a hydrophobic compound obtained by the conventional positive development.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: May 6, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsutomu Ogihara, Takafumi Ueda, Fujio Yagihashi
  • Publication number: 20130005150
    Abstract: The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition.
    Type: Application
    Filed: June 15, 2012
    Publication date: January 3, 2013
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Tsutomu OGIHARA, Takafumi UEDA, Toshiharu YANO, Fujio YAGIHASHI
  • Patent number: 8277600
    Abstract: A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer.
    Type: Grant
    Filed: August 14, 2009
    Date of Patent: October 2, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yoshitaka Hamada, Fujio Yagihashi, Takeshi Asano
  • Patent number: 8257528
    Abstract: A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution.
    Type: Grant
    Filed: August 13, 2009
    Date of Patent: September 4, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Fujio Yagihashi, Yoshitaka Hamada, Takeshi Asano
  • Publication number: 20120207917
    Abstract: A conductive pattern-forming composition is obtained by loading a silicone rubber composition comprising a curable organopolysiloxane and a curing agent with conductive submicron particles.
    Type: Application
    Filed: February 14, 2012
    Publication date: August 16, 2012
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yoshitaka Hamada, Fujio Yagihashi
  • Publication number: 20100283133
    Abstract: In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.
    Type: Application
    Filed: July 23, 2010
    Publication date: November 11, 2010
    Inventors: Yoshitaka Hamada, Fujio Yagihashi, Takeshi Asano, Hideo Nakagawa, Masaru Sasago
  • Publication number: 20100233482
    Abstract: Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof.
    Type: Application
    Filed: May 28, 2010
    Publication date: September 16, 2010
    Inventors: Yoshitaka Hamada, Fujio Yagihashi, Takeshi Asano, Hideo Nakagawa, Masaru Sasago
  • Patent number: 7786022
    Abstract: In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.
    Type: Grant
    Filed: February 12, 2008
    Date of Patent: August 31, 2010
    Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd.
    Inventors: Yoshitaka Hamada, Fujio Yagihashi, Takeshi Asano, Hideo Nakagawa, Masaru Sasago
  • Patent number: 7754330
    Abstract: Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof.
    Type: Grant
    Filed: May 27, 2009
    Date of Patent: July 13, 2010
    Assignees: Shin-Etsu Chemical Co., Ltd., Panasonic Corporation
    Inventors: Yoshitaka Hamada, Fujio Yagihashi, Takeshi Asano, Hideo Nakagawa, Masaru Sasago
  • Publication number: 20100040895
    Abstract: A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer.
    Type: Application
    Filed: August 14, 2009
    Publication date: February 18, 2010
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yoshitaka Hamada, Fujio Yagihashi, Takeshi Asano
  • Publication number: 20100040893
    Abstract: A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution.
    Type: Application
    Filed: August 13, 2009
    Publication date: February 18, 2010
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Fujio Yagihashi, Yoshitaka Hamada, Takeshi Asano
  • Patent number: 7651829
    Abstract: Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100° C. or greater.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: January 26, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yoshitaka Hamada, Fujio Yagihashi, Mutsuo Nakashima, Kazumi Noda, Katsuya Takemura
  • Publication number: 20090294726
    Abstract: Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof.
    Type: Application
    Filed: May 27, 2009
    Publication date: December 3, 2009
    Inventors: Yoshitaka Hamada, Fujio Yagihashi, Takeshi Asano, Hideo Nakagawa, Masaru Sasago
  • Publication number: 20090294922
    Abstract: Provided is an organic silicon oxide fine particle capable of satisfying an expected dielectric constant and mechanical strength and having excellent chemical stability for obtaining a high-performance porous insulating film.
    Type: Application
    Filed: May 27, 2009
    Publication date: December 3, 2009
    Inventors: Yoshitaka Hamada, Fujio Yagihashi, Takeshi Asano, Hideo Nakagawa, Masaru Sasago