Abstract: Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): Si(OR1)4 ??(1) wherein, R1s may be the same or different and each independently represents a linear or branched C1-4 alkyl group and/or at least one alkoxysilane compound represented by the following formula (2): R2nSi(OR3)4-n ??(2) wherein, R2(s) may be the same or different when there are plural R2s and each independently represents a linear or branched C1-8 alkyl group, R3(s) may be the same or different when there are plural R3s and each independently represents a linear or branched C1-4 alkyl group, and n is an integer from 1 to 3 in the reaction mixture containing a large excess of water.

Abstract: The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C.

Abstract: The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method.

Abstract: The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4-n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.

Abstract: Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2): (R1)aSi(R2)4-a??(1) (R3)b(R5)3-bSi—R7—Si(R6)3-c(R4)c??(2) wherein R1, R3 and R4 each independently represents a monovalent hydrocarbon group which may have a substituent; R2, R5 and R6 each independently represents a hydrolyzable group; R7 represents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.

Abstract: Provided are a composition for forming film which can form a porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; a porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a surfactant and a solution comprising polymer obtainable by hydrolyzing and condensing, in the presence of the surfactant, one or more of alkoxysilane represented by Formula (1) and one or more of alkoxysilane represented by Formula (2): (R1)mSi(OR2)4-m??(1) R3Si(R4)n(OR5)3-n??(2) Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.

Abstract: According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. Specifically, the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula (X2O) i(SiO2)j(H2O)k and one more organosilate compounds represented by the formula (X2O)a(RSiO1.5)b(H2O)c. Thus, the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured.

Abstract: The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4?n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.

Abstract: It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing. The present invention provides a silicone resin for preventing reflection comprising an organic group comprising a carbon-oxygen single bond and/or a carbon-oxygen double bond; a light-absorbing group; and a silicon atom whose terminal end or ends are Si—OH and/or Si—OR. It also provides an antireflective film material comprising this silicone resin (A) for preventing reflection film, an organic solvent (B) and an acid generator (C).

Abstract: The present invention is a composition for forming a porous film obtainable by hydrolysis and condensation, in an acidic or alkaline condition, of a mixture of 100 parts by weight of one or more compounds selected of the group consisting of hydrolysable silicon compounds represented by Formulas (1) and (2) as described herein and partially hydrolyzed and condensed products of the hydrolysable silicon compounds represented by Formulas (1) and (2), and 0.1 to 20 parts by weight of one or more cross-linking agents selected from the group consisting of structure-controlled cyclic or multi-branched oligomers represented by Formulas (3) to (8) as described herein.

Abstract: The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C.

Abstract: Provided is a composition formed by hydrolysis and condensation composition of the alkoxysilane, the composition comprising a reduced amount of metallic and halogen impurities and being applicable as electronic material. Also provided is an insulating film having low dielectric constant produced by applying the composition and sintering it. More specifically, a method for manufacturing a composition for forming a film, comprising a step of hydrolysis and condensation of alkoxysilane or a partial hydrolysis product of the alkoxysilane in an organic solvent in the presence of trialkylmethylammonium hydroxide as catalyst, wherein the alkoxysilane is selected from the groups consisting of compounds represented by formulae (1) to (4) below, and the trialkylmethylammonium hydroxide is represented by formula (5) below.

Abstract: Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R1)4N]+[R2X]???(1) Hk[(R1)4N]m+Yn???(2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C—CO2, NO3 or NO2; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.

Abstract: The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C.

Abstract: Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a polymer which is obtainable by hydrolyzing and condensing one or more silane compounds represented by Formula (1), or preferably by hydrolyzing and co-condensing one or more silane compounds represented by Formula (1) and one more silane compounds represented by Formula (2), Formulas (1) and (2) being: (R1)aSi(R2)4-a??(1) (R3)bSi(R4)4-b??(2) Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.

Abstract: Provided is a coating liquid for forming a porous film having desirably controlled thickness and having excellent dielectric and mechanical properties, using the conventional semiconductor process. Specifically, provided is a composition for forming a porous film comprising a condensation product and an organic solvent wherein the condensation product is obtained by hydrolysis and condensation, at presence of a basic catalyst, of one or more silane compounds represented by formula (1): R1kSi(OR2)4-k, and one or more crosslinking agents represented by formula (2): {Xj(Y)3-jSi-(L)m-}nMZ4-n. Moreover, a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and heating the dried film so as to hardent the film, and others are provided.

Abstract: It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing.

Abstract: The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C.

Abstract: The invention includes a semiconductor device. Specifically provided is a semiconductor device comprising a porous film therein, the porous film being formable by a composition comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1) : RnSi(OR?)4-n. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.

Abstract: Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R1)4N]+[R2X]???(1) Hk[(R1)4N]m+YV???(2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C—CO2, NO3 or NO2; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.