Abstract: The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4-n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.

Abstract: The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside.

Abstract: Disclosed are novel onium salts represented by general formula (R)3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of forming the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.

Abstract: A composition comprising (A) a silanol group-bearing silicone resin comprising 30-100 mol % of T units: R1—SiZ3 and among the entire T units, 30-80 mol % of T-2 units containing only one silanol group: R1—Si(OH)Z′2 wherein R1 is a monovalent hydrocarbon group, Z is OH, hydrolyzable group or siloxane residue, at least one Z being a siloxane residue, and Z′ is a siloxane residue, and having a number average molecular weight of at least 100, and (B) a polymer resulting from an acrylate and/or methacrylate monomer is applied to a substrate and heated above the decomposition temperature of polymer (B) to form a porous film. The porous film is flat and uniform despite porosity, and has a low permittivity and high mechanical strength. It is best suited as an interlayer insulating layer when used in semiconductor device fabrication.

Abstract: Disclosed are novel tert-butyl 4,4-bis(4′-hydroxyphenyl)pentanoate derivatives represented by the following general formula (I); wherein R1 represents a protective group which can be readily eliminated under an acidic condition, and R2 represents a hydrogen atom, a lower alkyl group or a lower alkoxy group: and high energy radiation-responsive positive resist materials using said novel derivatives as dissolution inhibitors.

Abstract: Disclosed are novel onium salts represented by general formula (R) 3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of foxing the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.

Abstract: A composition comprising (A) a silanol group-bearing silicone resin comprising 30-100 mol % of T units: R1—SiZ3 and among the entire T units, 30-80 mol % of T-2 units containing only one silanol group: R1—Si(OH)Z′2 wherein R1 is a monovalent hydrocarbon group, Z is OH, hydrolyzable group or siloxane residue, at least one Z being a siloxane residue, and Z′ is a siloxane residue, and having a number average molecular weight of at least 100, and (B) a polymer resulting from an acrylate and/or methacrylate monomer is applied to a substrate and heated above the decomposition temperature of polymer (B) to form a porous film. The porous film is flat and uniform despite porosity, and has a low permittivity and high mechanical strength. It is best suited as an interlayer insulating layer when used in semiconductor device fabrication.

Abstract: A coating solution of a poly(phenylsilsesquioxane) ladder polymer having a weight average molecular weight of 4,000-100,000 in a suitable solvent is spin coated and heated to form a dense dielectric film having a low dielectric constant.

Abstract: An organic silicon compound is obtained by hydrolyzing (A) a hydrolyzable silane containing an alkoxy or acyloxy group and a nitrogenous organic group: and (B) a hydrolyzable silane containing an alkoxy or acyloxy group. The hydrolyzate or organic licon compound is available as an aqueous solution which is ready for use as a binder composition. An aqueous coating composition comprising the binder composition and optionally, a UV screen compound is also provided. The binder composition and the coating composition are shelf stable and impart water resistance, heat resistance and weatherability.

Abstract: Proposed is a method for the finishing treatment of various kinds of fabric materials with an aminoalkyl-modified dimethylpolysiloxane to impart the fabric material with excellent softness and smoothness with less disadvantages of yellowing of the treated fabric material than in the prior art using similar aminoalkyl-modified dimethylpolysiloxanes. In the inventive method, the aminoalkyl-modified dimethylpolysiloxane is represented by the general formulaA--SiR.sub.2 --O--(--SiR.sub.2 --O--).sub.p --(--SiRQ--O--).sub.q --SiR.sub.2 --A,in which R is a monovalent hydrocarbon group having 1 to 20 carbon atoms, Q is an aminoalkyl group expressed by the general formula--R.sup.1 --(--NH--CH.sub.2 --CH.sub.2 --).sub.n --NH.sub.2,R.sup.

Abstract: A water-resistant ink composition comprising:(I) 10 parts by weight of a water-soluble dye compound and/or organic pigment compound;(II) 2 to 60 parts by weight of an organosilicon compound which is obtained from a mixture of components (A) and (B) shown below by hydrolysis in water or in an organic solvent containing more water than necessary for hydrolysis,(A) 100 parts by weight of a hydrolyzable silane having a nitrogen-containing organic group represented by the following formula (1) :YR.sup.1.sub.m SiR.sup.2.sub.3-m (1)wherein R.sup.1 is a C.sub.1-8 unsubstituted or substituted monovalent hydrocarbon group containing no nitrogen atom, R.sup.2 is a C.sub.1-4 alkoxyl group or acyloxy group, Y is a nitrogen-containing organic group, and m is 0 or 1, or a partial hydrolyzate thereof and(B) 5 to 200 parts by weight of a hydrolyzable silane represented by the following formula (2):R.sup.3.sub.n SiR.sup.4.sub.4-n (2)wherein R.sup.3 is a C.sub.

Abstract: Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.

Abstract: Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.

Abstract: In a chemically amplified positive resist composition comprising an organic solvent, an alkali soluble resin, an acid generator, and an optional dissolution inhibitor, a salt of a pyridine which may have an alkyl, alkoxy, amino or dialkylamino group with an alkylsulfonic acid, arylsulfonic acid or halogen atom is blended. Because of high sensitivity to deep UV and resolution and elimination of the PED problem causing T-top pattern configuration and the skirting phenomenon, the resist composition is improved in dimensional precision and lends itself to fine patterning.

Abstract: Provided is a poly(para-t-butoxycarbonyloxystyrene) having recurring units of the formula: ##STR1## which is prepared by anionic polymerization of para-t-butoxycarbonyloxystyrene. The polymer is of a controlled molecular weight and a narrow molecular weight distribution and has a high degree of resolution and development, meeting the requirements of resist materials. The method allows for simple preparation of such polymers.

Abstract: A polystyrene type monodispersion polymer having at least a monomer unit represented by the following general formula (I), and having a molecular weight which lies in the range 500-500,000 and manufacturing process thereof are disclosed; ##STR1## where R is a hydrogen atom or methyl group, and the R in the molecule may be identical or different.

Abstract: A resist based on a living polymer is provided. Living anionic polymerization of p-alkoxycarbonylstyrene monomers results in polymers having a molecular weight distribution (Mw/Mn) of from 1 to 1.4.

Abstract: A p-vinylphenoxydimethylphenylcalbyldimethylsilane homopolymer having a molecular weight dispersion narrow enough to ensure high resolution and high developability to resists containing said homopolymer as main component can be manufactured by anionic polymerization of a p-vinylphenoxydimethylphenylcalbyldimethylsilane monomer.

Abstract: There is disclosed a novel .beta.-lactam antibiotics represented by the formula: ##STR1## wherein A is a group represented by the formulae -NHCO--, --NHCONHCO--, --NHCOCH.dbd.CH-- or ##STR2## where R.sub.6 is a hydrogen atom or a lower alkyl group; R.sub.1 and R.sub.2 are independently a hydrogen atom or a protective group; R.sub.3 is a hydrogen atom or a methoxy group; X is a hydrogen atom, a hydroxyl group, a protected hydroxyl group, a halogen atom, a lower alkoxy group or a nitro group; n is an integer of 1 or 2; Y is a group represented by the formulae: ##STR3## provided that a carbon atom which is bonded by a carboxyl group being bonded to nitrogen atom; M is a hydrogen atom, a protective group or an easily hydrolyzable group in a human body; R.sub.7 is a hydrogen atom, a methyl group a lower alkoxy-methyl group or a group represented by the formula: --CH.sub.