Abstract: An image sensing apparatus which reduces noise generated by shift operation and power consumption is disclosed. The shift register of a horizontal scanning circuit is divided into a plurality of partial shift registers. Shift clock control circuits control supply of a shift clock to the partial shift registers individually for each partial shift register.

Abstract: A solid-state image sensor has a sensor array that includes an array of pixel cells. The solid-state image sensor sequentially selects one line from plural lines of the sensor array and sequentially reads out signal charge and reset levels of pixel photosensor cells belonging to the selected line via first and second optical-signal common output lines and first and second noise-signal common output lines. Differential signals are amplified and output via signal less noise (S-N) read-out circuits. The optical-signal and the noise-signal common output lines are arranged parallel to one another in the sequence of the first optical-signal common output line, the first noise-signal common output line, the second noise-signal common output line, and the second optical-signal common output line. The solid stage image sensor may be used in a camera and in a camera control system.

Abstract: The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.

Abstract: There is provided a solid-state image pickup device comprising a plurality of pixel units, each of which includes a photoelectric conversion element, a signal line which reads out signals from said plurality of pixel units, a first capacitor element which has a first electrode connected to the signal line, an amplifier which has an input terminal connected to a second electrode of the first capacitor element, and a second capacitor element connected between the input terminal and an output terminal of the amplifier, wherein the first capacitor element has a capacitance value which is smaller at the time of execution of an adding mode than at the time of execution of a non-adding mode, and thereby making an amplification factor of the amplifier smaller at the time of execution of the adding mode than at the time of execution of the non-adding mode.

Abstract: An image sensing apparatus includes a photoelectric converter having a plurality of pixels covered by a color filter composed of a plurality of colors, a plurality of common readout units adapted to sequentially output signals from the plurality of pixels, a time division multiplex (TDM) unit for time division multiplexing signals from the plurality of common readout units, and a readout control unit for reading the signals from the plurality of pixels to the common readout units in such a way that signals from pixels covered by color filters of the same color are continuously multiplexed.

Abstract: An image sensing apparatus includes a photoelectric converter having a plurality of pixels covered by a color filter composed of a plurality of colors, a plurality of common readout units adapted to sequentially output signals from the plurality of pixels, a time division multiplex (TDM) unit for time division multiplexing signals from the plurality of common readout units, and a readout control unit for reading the signals from the plurality of pixels to the common readout units in such a way that signals from pixels covered by color filters of the same color are continuously multiplexed.

Abstract: A manufacturing method of manufacturing a semiconductor device having a plurality of wiring layers. The method includes the steps of forming a wiring by a first wiring layer as a pattern by dividing a desired pattern into a plurality of patterns, connecting the divided patterns, and exposing them, wherein a position of the connection is formed in parallel with the wiring which is formed by the first wiring layer, and forming a wiring by a second wiring layer having an area which intersects the connecting position by a batch processing of exposure.

Abstract: The present invention provides a solid state image sensor and a camera using such a solid state image sensor, in which all of stage registers of the shift register can be reset efficiently without increasing the number of pads and/or sensor pins. The solid state image sensor comprises a plurality of photoelectric conversion elements 31 arranged in a two-dimensional array, a vertical shift register 503 disposed in a column direction and a horizontal shift register 504 disposed in a row direction and is characterized in that a timing for controlling resetting means for a first stage register of the shift register differs from a timing for controlling a second stage register and subsequent stage registers. Further, as a concrete example, the second stage register and subsequent stage registers are rest by a pulse for driving the shift register and the first stage register is reset by a pulse in which a high level is reached only upon power ON.

Abstract: The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.

Abstract: There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.

Abstract: There is provided an image pickup apparatus including a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.

Abstract: The output voltages of dark pixels and optical black (OB) pixels are different between a row including a pixel which receives strong light and another row. An image formed upon receiving a strong light spot suffers whitish bands on the right and left of the spot. To solve this problem, this invention provides an image pickup apparatus including a pixel containing a photodiode which converts a photo-signal into a signal charge and accumulates the signal charge and an amplifier transistor which amplifies the signal charge accumulated in the photodiode, and a control element adapted to limit the output of the amplifier transistor so as to prevent the output from falling to below a determined voltage.

Abstract: A manufacturing method of manufacturing a semiconductor device having a plurality of wiring layers. The method includes the steps of forming a wiring by a first wiring layer as a pattern by dividing a desired pattern into a plurality of patterns, connecting the divided patterns, and exposing them, wherein a position of the connection is formed in parallel with the wiring which is formed by the first wiring layer, and forming a wiring by a second wiring layer having an area which intersects the connecting position by a batch processing of exposure.

Abstract: In order to reduce the noise in the readout signal, the invention provides an image pickup apparatus comprising a pixel including a photoelectric conversion unit for converting the incident light and accumulating a resulting electrical signal, and a transfer switch reading the electrical signal accumulated in the photoelectric conversion unit or a signal based on such electrical signal, and potential control means for maintaining the potential of the signal line higher than that of the photoelectric conversion unit while the photoelectric conversion unit accumulates the electrical signal.

Abstract: The output voltages of dark pixels and optical black (OB) pixels are different between a row including a pixel which receives strong light and another row. An image formed upon receiving a strong light spot suffers whitish bands on the right and left of the spot. To solve this problem, this invention provides an image pickup apparatus including a pixel containing a photodiode which converts a photo-signal into a signal charge and accumulates the signal charge and an amplifier transistor which amplifies the signal charge accumulated in the photodiode, and a control element adapted to limit the output of the amplifier transistor so as to prevent the output from falling to below a predetermined voltage.

Abstract: A magnetic memory includes a plurality of variable resistors arrayed as memory elements in a matrix, a plurality of bit lines each of which is arranged on each row of the matrix and connected to one terminal of each variable resistor belonging to the same row, a read circuit which detects the resistance values of the variable resistors based on currents flowing through the bit lines, and load elements connected to the bit lines independently of and in parallel with the memory elements.

Abstract: There is provided an image pickup apparatus comprising two-dimensionally arrayed pixels, a plurality of read-out channels each including a read-out circuit and an amplifier circuit, a parallel-serial conversion circuit which sequentially selects pixel signals output via the plurality of read-out channels and outputs a series of pixel signals, and a clamp unit which clamps the reset level includeda in an output signal from the read-out circuit in order to remove an offset generated in each read-out channel.

Abstract: An image pickup element including: a plurality of pixels that pick up an object image; a gain variable amplifying circuit that amplifies a signal from the plurality of pixels; and a semiconductor substrate on which the plurality of pixels and the gain variable amplifying circuit are formed, wherein the gain variable amplifying circuit includes a first amplifying circuit that amplifies the signal from the plurality of pixels and a second amplifying circuit that amplifies a signal from the first amplifying circuit and is connected in series with the first amplifying circuit; and wherein a gain of the first amplifying circuit is switched at every first multiple and a gain of the second amplifying circuit is switched at every second multiple different from the first multiple.

Abstract: There is provided an image pickup apparatus having two-dimensionally arrayed pixels, a plurality of read-out channels each including a read-out circuit and an amplifier circuit, a parallel-serial conversion circuit which sequentially selects pixel signals output via the plurality of read-out channels and outputs a series of pixel signals, and a clamp unit which clamps the reset level includeda in an output signal from the read-out circuit in order to remove an offset generated in each read-out channel.

Abstract: A magnetic memory includes a plurality of variable resistors arrayed as memory elements in a matrix, a plurality of bit lines each of which is arranged on each row of the matrix and connected to one terminal of each of variable resistors belonging to the same row, a read circuit which detects the resistance values of the variable resistors based on currents flowing through the bit lines, and load elements arranged on the bit lines independently of the memory elements.