Abstract: A solid-state imaging device includes a pixel including a photoelectric conversion element, a floating diffusion layer, a transfer transistor, a reset transistor, and an amplifier transistor, and a control unit configured to supply a first voltage to a gate of the reset transistor when the charges are accumulated in the photoelectric conversion element, the first voltage being set between a second voltage and a third voltage; subsequently supply the second voltage to the gate of the reset transistor when the reset transistor is turned on in order to reset the potential of the floating diffusion layer, and subsequently supply the third voltage to the gate of the reset transistor when the amplifier transistor outputs the signal based on the potential of the floating diffusion layer.

Abstract: A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

Abstract: An image capture device includes multiple pixels, each of which has multiple photoelectric conversion elements. Each of first pixels which are some of the pixels outputs a signal based on charges obtained by adding together the charges generated in the photoelectric conversion elements. Each of second pixels outputs a signal based on charges generated by a photoelectric conversion element disposed at a first position, without outputting charges generated by a photoelectric conversion element disposed at a second position among the photoelectric conversion elements. Each of third pixels outputs a signal based on charges generated by the photoelectric conversion element disposed at the second position, without outputting a signal based on charges generated by the photoelectric conversion element disposed at the first position.

Abstract: An image pickup apparatus includes a plurality of pixels. Each pixel includes a photoelectric conversion unit, an amplifying transistor, and a reset transistor. Each pixel is set into a selected state or a non-selected state according to a voltage supplied to an input node of an amplifying transistor via the reset transistor. A control unit controls the reset transistor to turn on or off by supplying a voltage to a control node of the reset transistor. More specifically, a first voltage is supplied to the control node of the reset transistor in the pixel at the selected state to control it in the off-state, and a second voltage is supplied to the control node of the reset transistor in the pixel at the non-selected state to control it to be in the off-state.

Abstract: One disclosed aspect of the embodiments relates to a solid-state image pickup device including a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region of a same conduction type arranged in order along a first direction in an active region, and a first conduction pattern, a second conduction pattern, and a third conduction pattern provided above an active region disposed between the patterns and the semiconductor regions corresponding thereto with an insulating member interposed therebetween and electrically isolated from each other and arranged in order along the first direction. The first semiconductor region, the first conduction pattern, and the third semiconductor region constitute the transfer transistor.

Abstract: An image pickup apparatus includes a pixel portion in which pixels are arranged, the pixels each including a first semiconductor region of first conductivity type having signal charges as majority carriers and a second semiconductor region of second conductivity type having signal charges as minority carriers, the second semiconductor region being contiguous to the first semiconductor region, the first semiconductor region being disposed between a surface of a semiconductor substrate. The pixel portion includes a class I pixel and a class II pixel located near a reference contact. A distance between the surface of the semiconductor substrate and the second semiconductor region of the class I pixel is smaller than a distance between the surface of the semiconductor substrate and the second semiconductor region of the class II pixel.

Abstract: An image sensor including a photoelectric converter, a charge-voltage converter, a transfer transistor to transfer a charge from the photoelectric converter to the charge-voltage converter whereby potential of the charge-voltage converter changes to a first direction, an amplifier transistor to output a signal corresponding to potential of the charge-voltage converter to a column signal line, the amplifier transistor sequentially outputting, to the column signal line, noise level and light signal level, a capacitance between a control signal line and the charge-voltage converter, and a control unit to change a potential of the control signal line so that the potential of the charge-voltage converter changes to a second direction opposite to the first direction in a period in which the charge-voltage converter is in floating and which is prior to outputting the noise level.

Abstract: One disclosed aspect of the embodiments relates to a solid-state image pickup device including a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region of a same conduction type arranged in order along a first direction in an active region, and a first conduction pattern, a second conduction pattern, and a third conduction pattern provided above an active region disposed between the patterns and the semiconductor regions corresponding thereto with an insulating member interposed therebetween and electrically isolated from each other and arranged in order along the first direction. The first semiconductor region, the first conduction pattern, and the third semiconductor region constitute the transfer transistor.

Abstract: A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

Abstract: An image capturing apparatus, comprising a pixel array in a semiconductor region, a pad portion for receiving a voltage, a plurality of first power wiring patterns arranged on the pixel array along a first direction as one direction of a row direction and a column direction, a second power wiring pattern, arranged on a region outside the pixel array along a second direction as the other direction of the row direction and the column direction, for electrically connecting the plurality of first wiring patterns to the pad portion, and a plurality of contacts for electrically connecting the plurality of first power wiring patterns to the semiconductor region, wherein a resistance value of the second power wiring pattern in the second direction is smaller than a resistance value of the plurality of first power wiring patterns in the first direction.

Abstract: A solid-state image sensor includes a pixel region and peripheral circuit region arranged on a semiconductor substrate. The pixel region includes pixels. Each pixel includes a photoelectric conversion element and an amplification MOS transistor that outputs a signal corresponding to charges of the photoelectric conversion element to a column signal line. The peripheral circuit region includes a circuit that drives the pixel or processes the signal output to the column signal line. A resistance of a source region of the amplification MOS transistor is lower than a resistance of a drain region of the amplification MOS transistor.

Abstract: A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

Abstract: A purpose of the present invention is to provide a preferable separation structure of wells when a photoelectric conversion unit and a part of a peripheral circuit unit or a pixel circuit are separately formed on separate substrates and electrically connected to each other. To this end, a solid-state imaging device includes a plurality of pixels including a photoelectric conversion unit and a amplification transistor configured to amplify a signal generated by the photoelectric conversion unit; a first substrate on which a plurality of the photoelectric conversion units are disposed; and a second substrate on which a plurality of the amplification transistors are disposed. A well of a first conductivity type provided with a source region and a drain region of the amplification transistor is separated from a well, which is disposed adjacent to the well in at least one direction, of the first conductivity type provided with the source region and the drain region of the amplification transistor.

Abstract: There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.

Abstract: An image pickup apparatus includes a plurality of pixels. Each pixel includes a photoelectric conversion unit, an amplifying transistor, and a reset transistor. Each pixel is set into a selected state or a non-selected state according to a voltage supplied to an input node of an amplifying transistor via the reset transistor. A control unit controls the reset transistor to turn on or off by supplying a voltage to a control node of the reset transistor. More specifically, a first voltage is supplied to the control node of the reset transistor in the pixel at the selected state to control it in the off-state, and a second voltage is supplied to the control node of the reset transistor in the pixel at the non-selected state to control it to be in the off-state.

Abstract: A signal transmission apparatus that transmits a 1-bit signal obtained by delta-sigma modulation is provided. In the signal transmission apparatus, a pseudo-random noise pattern having a data rate equal to that of the delta-sigma modulated 1-bit signal is generated, and the 1-bit signal is code-modulated using the generated pseudo-random noise pattern. The generated pseudo-random noise pattern and the code-modulated signal obtained through code modulation are transmitted via a transmission line. The transmitted code-modulated signal is demodulated using the transmitted pseudo-random noise pattern.

Abstract: An image pickup apparatus includes a pixel portion in which pixels are arranged, the pixels each including a first semiconductor region of first conductivity type having signal charges as majority carriers and a second semiconductor region of second conductivity type having signal charges as minority carriers, the second semiconductor region being contiguous to the first semiconductor region, the first semiconductor region being disposed between a surface of a semiconductor substrate. The pixel portion includes a class I pixel and a class II pixel located near a reference contact. A distance between the surface of the semiconductor substrate and the second semiconductor region of the class I pixel is smaller than a distance between the surface of the semiconductor substrate and the second semiconductor region of the class II pixel.

Abstract: A purpose of the present invention is to provide a preferable separation structure of wells when a photoelectric conversion unit and a part of a peripheral circuit unit or a pixel circuit are separately formed on separate substrates and electrically connected to each other. To this end, a solid-state imaging device includes a plurality of pixels including a photoelectric conversion unit and a amplification transistor configured to amplify a signal generated by the photoelectric conversion unit; a first substrate on which a plurality of the photoelectric conversion units are disposed; and a second substrate on which a plurality of the amplification transistors are disposed. A well of a first conductivity type provided with a source region and a drain region of the amplification transistor is separated from a well, which is disposed adjacent to the well in at least one direction, of the first conductivity type provided with the source region and the drain region of the amplification transistor.

Abstract: A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

Abstract: There is provided an image pickup apparatus comprising two-dimensionally arrayed pixels, a plurality of read-out channels each including a read-out circuit and an amplifier circuit, a parallel-serial conversion circuit which sequentially selects pixel signals output via the plurality of read-out channels and outputs a series of pixel signals, and a clamp unit which clamps the reset level included in an output signal from the read-out circuit in order to remove an offset generated in each read-out channel.