Abstract: An imaging device includes a plurality of pixels two-dimensionally disposed. At least part of the plurality of pixels includes a first photoelectric conversion unit and a second photoelectric conversion unit provided in a semiconductor substrate and each including a first semiconductor region of a first conductivity type for accumulating a signal charge, a first isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion unit and including a second semiconductor region forming a first potential barrier for the signal charge in the first semiconductor region, and a second isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion units and including a trench isolation forming a second potential barrier higher than the first potential barrier for the signal charge in the first semiconductor region.

Abstract: An imaging device is provided in which a shield wiring is arranged between signal lines of a first set out of a plurality of signal lines, and, in which signal lines of a second set out of a plurality of signal lines are adjacent to each other.

Abstract: An imaging device is provided in which, at a position where a line passes a pixel in a first row along a second direction intersecting with a first direction, a first signal line and a second signal line are arranged at overlapping positions, in which, at a position where a line passes a pixel in a second row along the second direction, the first and the second signal lines are arranged at non-overlapping positions, and, in which, at a position where a line passes a pixel in a third row along the second direction, the first and the second signal lines are arranged at overlapping positions.

Abstract: A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.

Abstract: An imaging device includes a wiring connected to an output node of an amplification transistor, and the wiring is provided at a position between an output line electrically connected to the output node of the amplification transistor and a gate of the amplification transistor.

Abstract: A manufacturing method of an imaging device includes ion-implanting impurity ions of a second conductivity type into a first region and a second region using a first mask, the first region being disposed under a region to be an electric charge accumulation region and the second region being under an element isolation portion, continuous with the first region, and positioned shallower than the first region, and ion-implanting impurity ions of the second conductivity type into a third region and a fourth region using a second mask, the third region being disposed under the region and positioned shallower than the first region, and the fourth region being under the element isolation portion, continuous with the third region and the second region, and positioned shallower than the third region and the second region, wherein the first and the second mask cover a part of the element isolation portion and have an aperture.

Abstract: A manufacturing method of an imaging device includes ion-implanting impurity ions of a second conductivity type into a first region and a second region using a first mask, the first region being disposed under a region to be an electric charge accumulation region and the second region being under an element isolation portion, continuous with the first region, and positioned shallower than the first region, and ion-implanting impurity ions of the second conductivity type into a third region and a fourth region using a second mask, the third region being disposed under the region and positioned shallower than the first region, and the fourth region being under the element isolation portion, continuous with the third region and the second region, and positioned shallower than the third region and the second region, wherein the first and the second mask cover a part of the element isolation portion and have an aperture.

Abstract: A solid-state imaging device has: a counter dope region of a first conductivity type which is formed so as to surround a drain region of a transfer transistor of the solid-state imaging device and in which impurity concentration of the first conductivity type is lower than that of the drain region; and an isolating region of a second conductivity type which is formed in a deep region below channel regions of a plurality of transistors and in which impurity concentration of the second conductivity type is higher than that of a well region, wherein a depth position of a lower surface of the counter dope region is deeper than a depth position of a lower surface of a buried channel region.

Abstract: A photoelectric conversion device generates a signal correlated with a difference between a first potential at a first detection node and a second potential at a second detection node, the first potential based on electrons that are generated by a first photoelectric conversion portion and collected to a first collection node in a first period, and on holes that are generated by a second photoelectric conversion portion and collected to a second collection node in a second period different from the first period, the second potential based on holes that are generated by the second photoelectric conversion portion and collected to a fourth collection node in the first period, and on electrons that are generated by the first photoelectric conversion portion and collected to a third collection node in the second period.

Abstract: A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

Abstract: A solid-state imaging device includes a pixel including a photoelectric conversion element, a floating diffusion layer, a transfer transistor, a reset transistor, and an amplifier transistor, and a control unit configured to supply a first voltage to a gate of the reset transistor when the charges are accumulated in the photoelectric conversion element, the first voltage being set between a second voltage and a third voltage; subsequently supply the second voltage to the gate of the reset transistor when the reset transistor is turned on in order to reset the potential of the floating diffusion layer, and subsequently supply the third voltage to the gate of the reset transistor when the amplifier transistor outputs the signal based on the potential of the floating diffusion layer.

Abstract: An imaging device includes a plurality of pixels two-dimensionally disposed. At least part of the plurality of pixels includes a first photoelectric conversion unit and a second photoelectric conversion unit provided in a semiconductor substrate and each including a first semiconductor region of a first conductivity type for accumulating a signal charge, a first isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion unit and including a second semiconductor region forming a first potential barrier for the signal charge in the first semiconductor region, and a second isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion units and including a trench isolation forming a second potential barrier higher than the first potential barrier for the signal charge in the first semiconductor region.

Abstract: A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

Abstract: A solid-state imaging device includes a pixel including a photoelectric conversion element, a floating diffusion layer, a transfer transistor, a reset transistor, and an amplifier transistor, and a control unit configured to supply a first voltage to a gate of the reset transistor when the charges are accumulated in the photoelectric conversion element, the first voltage being set between a second voltage and a third voltage; subsequently supply the second voltage to the gate of the reset transistor when the reset transistor is turned on in order to reset the potential of the floating diffusion layer, and subsequently supply the third voltage to the gate of the reset transistor when the amplifier transistor outputs the signal based on the potential of the floating diffusion layer.

Abstract: An image capture device includes multiple pixels, each of which has multiple photoelectric conversion elements. Each of first pixels which are some of the pixels outputs a signal based on charges obtained by adding together the charges generated in the photoelectric conversion elements. Each of second pixels outputs a signal based on charges generated by a photoelectric conversion element disposed at a first position, without outputting charges generated by a photoelectric conversion element disposed at a second position among the photoelectric conversion elements. Each of third pixels outputs a signal based on charges generated by the photoelectric conversion element disposed at the second position, without outputting a signal based on charges generated by the photoelectric conversion element disposed at the first position.

Abstract: In a state where an electric charge is held in a first charge holding unit, starting accumulation of an electric charge in a photoelectric conversion unit simultaneously in a plurality of pixel rows, and performing a first transfer operation for transferring an electric charge from the photoelectric conversion unit to the first charge holding unit simultaneously in the plurality of pixel rows.

Abstract: A solid-state imaging device includes a pixel including a photoelectric conversion element, a floating diffusion layer, a transfer transistor, a reset transistor, and an amplifier transistor, and a control unit configured to supply a first voltage to a gate of the reset transistor when the charges are accumulated in the photoelectric conversion element, the first voltage being set between a second voltage and a third voltage; subsequently supply the second voltage to the gate of the reset transistor when the reset transistor is turned on in order to reset the potential of the floating diffusion layer, and subsequently supply the third voltage to the gate of the reset transistor when the amplifier transistor outputs the signal based on the potential of the floating diffusion layer.

Abstract: An image capture device includes multiple pixels, each of which has multiple photoelectric conversion elements. Each of first pixels which are some of the pixels outputs a signal based on charges obtained by adding together the charges generated in the photoelectric conversion elements. Each of second pixels outputs a signal based on charges generated by a photoelectric conversion element disposed at a first position, without outputting charges generated by a photoelectric conversion element disposed at a second position among the photoelectric conversion elements. Each of third pixels outputs a signal based on charges generated by the photoelectric conversion element disposed at the second position, without outputting a signal based on charges generated by the photoelectric conversion element disposed at the first position.

Abstract: An image sensor including a photoelectric converter, a charge-voltage converter, a transfer transistor to transfer a charge from the photoelectric converter to the charge-voltage converter whereby potential of the charge-voltage converter changes to a first direction, an amplifier transistor to output a signal corresponding to potential of the charge-voltage converter to a column signal line, the amplifier transistor sequentially outputting, to the column signal line, noise level and light signal level, a capacitance between a control signal line and the charge-voltage converter, and a control unit to change a potential of the control signal line so that the potential of the charge-voltage converter changes to a second direction opposite to the first direction in a period in which the charge-voltage converter is in floating and which is prior to outputting the noise level.

Abstract: A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.