Abstract: A semiconductor chip includes a compound semiconductor substrate having a pair of main surfaces and a side surface therebetween, a circuit on one main surface of the pair of main surfaces, and first metals on the main surface. The first metals are positioned, in plan view of the main surface, closer to an outer edge of the main surface than the circuit, substantially in a ring shape to surround the circuit with gaps between first metals adjacent to each other. The semiconductor chip further includes second metals on the main surface. The second metals are positioned, in plan view of the main surface, between the circuit and the first metals or closer to the outer edge than the first metals. Also, the second metals each are positioned, in plan view of the side surface, such that at least a part thereof overlaps a gap between the first metals.

Abstract: A power amplifier apparatus includes a semiconductor substrate, a plurality of first transistors on the semiconductor substrate, a plurality of second transistors, at least one collector terminal electrically connected to collectors of the plurality of first transistors, a first inductor having a first end electrically connected to the collector terminal and a second end electrically connected to a power supply potential, at least one emitter terminal electrically connected to emitters of the plurality of second transistors and adjacent to the collector terminal in a second direction, a second inductor having a first end electrically connected to the emitter terminal and a second end electrically connected to a reference potential, and at least one capacitor having a first end electrically connected to the collectors of the plurality of first transistors and a second end electrically connected to the emitters of the plurality of second transistors.

Abstract: A power amplifier circuit includes an amplifier transistor having a base, a collector, a bias circuit, and a first resistance element connected between the base of the amplifier transistor and the bias circuit. The bias circuit includes a voltage generation circuit, a first transistor having a base to which a first direct-current voltage is supplied, and an emitter from which the bias current or voltage is supplied, a second transistor having a base to which a second direct-current voltage is supplied, and an emitter connected to the emitter of the first transistor, a signal supply circuit disposed between the base of the amplifier transistor and the base of the second transistor, and an impedance circuit disposed between the base of the first transistor and the base of the second transistor.

Abstract: A power amplifier circuit is capable of restraining uneven temperature distribution among a plurality of unit transistors while restraining the deterioration of the characteristics of the power amplifier circuit. The power amplifier circuit includes: a first transistor group which includes a plurality of unit transistors and which amplifies an input signal and outputs an amplified signal; a bias circuit which supplies a bias current or a bias voltage to a base or a gate of each unit transistor of the first transistor group; a plurality of first resistive elements, each of which is connected between the base or the gate of each unit transistor of the first transistor group and an output of the bias circuit; and a plurality of second resistive elements, each of which is connected between an emitter or a source of each unit transistor of the first transistor group and a reference potential.

Abstract: A power amplifier circuit includes an amplifier transistor having a base, a collector, a bias circuit, and a first resistance element connected between the base of the amplifier transistor and the bias circuit. The bias circuit includes a voltage generation circuit, a first transistor having a base to which a first direct-current voltage is supplied, and an emitter from which the bias current or voltage is supplied, a second transistor having a base to which a second direct-current voltage is supplied, and an emitter connected to the emitter of the first transistor, a signal supply circuit disposed between the base of the amplifier transistor and the base of the second transistor, and an impedance circuit disposed between the base of the first transistor and the base of the second transistor.

Abstract: A power amplifier circuit includes an amplifier transistor, a bias circuit that supplies a bias current or voltage to the amplifier transistor, and a resistance element connected between a base of the amplifier transistor and the bias circuit. The bias circuit includes a voltage generation circuit, a first transistor having a base to which a first direct-current voltage is supplied and an emitter from which the bias current or voltage is supplied, a second transistor having a base to which a second direct-current voltage is supplied and an emitter connected to the emitter of the first transistor, a signal supply circuit that supplies an input signal to the base of the second transistor, and an impedance circuit disposed between the base of the first transistor and the base of the second transistor.

Abstract: A power amplifier includes power amplification circuits in a plurality of stages including a first stage and a second stage, each power amplification circuit including a transistor. The power amplification circuit in the first stage includes a first impedance circuit between an emitter of the transistor and a reference potential. The first impedance circuit has an impedance that does not vary with frequency or an impedance that varies with frequency. The power amplification circuit in the second stage includes a second impedance circuit between an emitter of the transistor and a reference potential. The second impedance circuit has an impedance that does not vary with frequency or an impedance that varies with frequency.

Abstract: A power amplifier circuit is capable of restraining uneven temperature distribution among a plurality of unit transistors while restraining the deterioration of the characteristics of the power amplifier circuit. The power amplifier circuit includes: a first transistor group which includes a plurality of unit transistors and which amplifies an input signal and outputs an amplified signal; a bias circuit which supplies a bias current or a bias voltage to a base or a gate of each unit transistor of the first transistor group; a plurality of first resistive elements, each of which is connected between the base or the gate of each unit transistor of the first transistor group and an output of the bias circuit; and a plurality of second resistive elements, each of which is connected between an emitter or a source of each unit transistor of the first transistor group and a reference potential.

Abstract: Provided is a semiconductor device with a reduced variation in temperature among a plurality of unit transistors. A semiconductor device includes: a semiconductor substrate; and a transistor group including at least one column in which a plurality of unit transistors are aligned and arranged along a first axis on the semiconductor substrate. A first column of the at least one column includes: a first group of transistors including two of the unit transistors that are adjacent to each other with a first distance therebetween, and a second group of transistors including two of the unit transistors that are adjacent to each other with a second distance therebetween, the first group of transistors is disposed at a position closer to a center of the first column along the first axis than the second group of transistors, and the first distance is larger than the second distance.

Abstract: A power amplifier circuit is capable of restraining uneven temperature distribution among a plurality of unit transistors while restraining the deterioration of the characteristics of the power amplifier circuit. The power amplifier circuit includes: a first transistor group which includes a plurality of unit transistors and which amplifies an input signal and outputs an amplified signal; a bias circuit which supplies a bias current or a bias voltage to a base or a gate of each unit transistor of the first transistor group; a plurality of first resistive elements, each of which is connected between the base or the gate of each unit transistor of the first transistor group and an output of the bias circuit; and a plurality of second resistive elements, each of which is connected between an emitter or a source of each unit transistor of the first transistor group and a reference potential.

Abstract: A power amplifier circuit includes an amplifier transistor having a base, a collector, a bias circuit, and a first resistance element connected between the base of the amplifier transistor and the bias circuit. The bias circuit includes a voltage generation circuit, a first transistor having a base to which a first direct-current voltage is supplied, and an emitter from which the bias current or voltage is supplied, a second transistor having a base to which a second direct-current voltage is supplied, and an emitter connected to the emitter of the first transistor, a signal supply circuit disposed between the base of the amplifier transistor and the base of the second transistor, and an impedance circuit disposed between the base of the first transistor and the base of the second transistor.

Abstract: Provided is a semiconductor device with a reduced variation in temperature among a plurality of unit transistors. A semiconductor device includes: a semiconductor substrate; and a transistor group including at least one column in which a plurality of unit transistors are aligned and arranged along a first axis on the semiconductor substrate. A first column of the at least one column includes: a first group of transistors including two of the unit transistors that are adjacent to each other with a first distance therebetween, and a second group of transistors including two of the unit transistors that are adjacent to each other with a second distance therebetween, the first group of transistors is disposed at a position closer to a center of the first column along the first axis than the second group of transistors, and the first distance is larger than the second distance.

Abstract: A power amplifier circuit includes an amplifier transistor having a base, a collector, a bias circuit, and a first resistance element connected between the base of the amplifier transistor and the bias circuit. The bias circuit includes a voltage generation circuit, a first transistor having a base to which a first direct-current voltage is supplied, and an emitter from which the bias current or voltage is supplied, a second transistor having a base to which a second direct-current voltage is supplied, and an emitter connected to the emitter of the first transistor, a signal supply circuit disposed between the base of the amplifier transistor and the base of the second transistor, and an impedance circuit disposed between the base of the first transistor and the base of the second transistor.

Abstract: The present disclosure provides a power amplifier circuit capable of suppressing the occurrence of noises while enabling control of an output power level. The power amplifier circuit includes a first transistor that amplifies a first signal; a bias circuit that supplies a bias current or voltage based on a control signal to the first transistor; a second transistor to which a control current based on the control signal is supplied, which has an emitter or a source thereof connected to a collector or a drain of the first transistor, and from which a second signal obtained by amplifying the first signal is output; and a first feedback circuit provided between the collector or the drain of the second transistor and the base or the gate of the second transistor.

Abstract: Provided is a power amplification module that supports a plurality of communication systems. The power amplification module includes: two power amplifiers that can be selectively connected in parallel with each other; a switch that, in accordance with one communication system selected from among the plurality of communication systems, selects one power amplifier that is to operate by itself from among the two power amplifiers or selects the two power amplifiers and connects the two power amplifiers in parallel with each other; and a phase correction circuit that, when the two power amplifiers are both selected, corrects a phase difference by being selectively connected between the outputs of the two selected power amplifiers such that a phase difference is not generated between the output signals of the two selected power amplifiers.

Abstract: A power amplifier circuit includes first and second transistors and a first voltage output circuit. A radio frequency signal is input into a base of the first transistor. The first voltage output circuit outputs a first voltage in accordance with a power supply voltage. The first voltage is supplied to a base or a gate of the second transistor. An emitter or a source of the second transistor is connected to a collector of the first transistor. A first amplified signal generated by amplifying the radio frequency signal is output from a collector or a drain of the second transistor.

Abstract: A power amplifier circuit is capable of restraining uneven temperature distribution among a plurality of unit transistors while restraining the deterioration of the characteristics of the power amplifier circuit. The power amplifier circuit includes: a first transistor group which includes a plurality of unit transistors and which amplifies an input signal and outputs an amplified signal; a bias circuit which supplies a bias current or a bias voltage to a base or a gate of each unit transistor of the first transistor group; a plurality of first resistive elements, each of which is connected between the base or the gate of each unit transistor of the first transistor group and an output of the bias circuit; and a plurality of second resistive elements, each of which is connected between an emitter or a source of each unit transistor of the first transistor group and a reference potential.

Abstract: Provided is a power amplification module that supports a plurality of communication systems. The power amplification module includes: two power amplifiers that can be selectively connected in parallel with each other; a switch that, in accordance with one communication system selected from among the plurality of communication systems, selects one power amplifier that is to operate by itself from among the two power amplifiers or selects the two power amplifiers and connects the two power amplifiers in parallel with each other; and a phase correction circuit that, when the two power amplifiers are both selected, corrects a phase difference by being selectively connected between the outputs of the two selected power amplifiers such that a phase difference is not generated between the output signals of the two selected power amplifiers.

Abstract: A power amplifier circuit includes an amplifier transistor having a base, a collector, a bias circuit, and a first resistance element connected between the base of the amplifier transistor and the bias circuit. The bias circuit includes a voltage generation circuit, a first transistor having a base to which a first direct-current voltage is supplied, and an emitter from which the bias current or voltage is supplied, a second transistor having a base to which a second direct-current voltage is supplied, and an emitter connected to the emitter of the first transistor, a signal supply circuit disposed between the base of the amplifier transistor and the base of the second transistor, and an impedance circuit disposed between the base of the first transistor and the base of the second transistor.

Abstract: Provided is a power amplification module that supports a plurality of communication systems. The power amplification module includes: two power amplifiers that can be selectively connected in parallel with each other; a switch that, in accordance with one communication system selected from among the plurality of communication systems, selects one power amplifier that is to operate by itself from among the two power amplifiers or selects the two power amplifiers and connects the two power amplifiers in parallel with each other; and a phase correction circuit that, when the two power amplifiers are both selected, corrects a phase difference by being selectively connected between the outputs of the two selected power amplifiers such that a phase difference is not generated between the output signals of the two selected power amplifiers.