Abstract: The present disclosure relates to the technical field of semiconductor processes, and discloses a semiconductor device and a manufacturing method therefor.

Abstract: An exemplary embodiment of the present disclosure illustrates a transmission interface device, and the transmission interface device comprises an antenna body. The antenna body comprises at least one electric coupling body and at least one magnetic coupling body at least covering or surrounding portion of the electric coupling body. When the antenna of the electronic device is close to the antenna body, the antenna body and the antenna of the electronic device selectively generate an electric coupling effect, a magnetic coupling effect, or a strong electromagnetic coupling effect, such that the transmission interface device can wirelessly charge the electronic device, or alternatively the transmission interface device and the electronic device can perform a power or data transmission.

Abstract: The present disclosure provides fin field-effect transistors and fabrication methods thereof. An exemplary fabrication process includes providing a substrate having a first region and a second region; forming first fins in the first region and second fins in the second region; forming a liner oxide layer on side surfaces of the first fins, the second fins and a surface of the substrate; forming an insulating barrier layer on the liner oxide layer in the first region; forming a precursor material layer on the insulating barrier layer in the first region and on the liner oxide layer in the second region; performing a curing annealing process to convert the precursor material into an insulation layer; and removing a top portion of the insulation layer to form an isolating layer and removing portions of the liner oxide layer, the insulating barrier layer, the first oxide layer and the second oxide layer.

Abstract: An adapter includes an insulating body, a plurality of electrical terminals which are assembled into the insulting body and a shielding shell. The insulating body has a tongue board at a front thereof, the tongue board defines terminal grooves in a bottom surface thereof, a rear surface of the insulating body defines a rear insertion chamber. Each of the electrical terminals has a holding portion assembled in the insulating body, a first contact portion connected with a front end of the holding portion, a second contact portion connected with a rear end of the holding portion. The first contact portions of the electrical terminals are assembled in the terminal grooves and protrude beyond the bottom surface of the tongue board, the second contact portions of the electrical terminals are located in the rear insertion chamber.

Abstract: An adapter includes an insulating body, a plurality of electrical terminals which are assembled into the insulting body and a shielding shell. The insulating body has a tongue board at a front thereof, the tongue board defines terminal grooves in a bottom surface thereof, a rear surface of the insulating body defines a rear insertion chamber. Each of the electrical terminals has a holding portion assembled in the insulating body, a first contact portion connected with a front end of the holding portion, a second contact portion connected with a rear end of the holding portion. The first contact portions of the electrical terminals are assembled in the terminal grooves and protrude beyond the bottom surface of the tongue board, the second contact portions of the electrical terminals are located in the rear insertion chamber.

Abstract: A method of manufacturing a semiconductor device includes forming a PMOS region and an NMOS region in a semiconductor substrate, forming dummy gate structures in the PMOS and NMOS regions, and forming a gate hard mask layer overlying top portions and sidewalls of the dummy gate structures. The method includes forming silicon carbon regions embedded in the semiconductor substrate on both sides of the dummy gate structure in the NMOS region, removing the hard mask layer on top of the dummy gate in the NMOS region, and forming silicon germanium regions embedded in the semiconductor substrate on both sides of the dummy gate structure in the PMOS region. After forming the silicon carbon regions and the silicon germanium regions, while retaining the hard mask layer on top of the dummy gates in the PMOS region, performing ion implant to form source/drain regions in the NMOS region and the PMOS region.

Abstract: An exemplary embodiment of the present disclosure illustrates a rectifying module, which is operable for rectifying an alternating current (AC) signal into a direct current (DC) signal. The rectifying module includes a transmission line, at least one rectifying unit, and at least one pattern. The transmission line is configured for receiving and transmitting the alternating current signal. The rectifying unit is arranged neighboring to the transmission line for operatively coupling with the transmission line to receive a part of the alternating current signal and rectifies the alternating current signal into the DC signal. The pattern is configured to be a hollow grounding structure and the pattern is disposed under the dual-line coupling areas of the rectifying unit neighboring to the transmission line.

Abstract: A method of manufacturing a semiconductor device includes forming a PMOS region and an NMOS region in a semiconductor substrate, forming dummy gate structures in the PMOS and NMOS regions, and forming a gate hard mask layer overlying top portions and sidewalls of the dummy gate structures. The method includes forming silicon carbon regions embedded in the semiconductor substrate on both sides of the dummy gate structure in the NMOS region, removing the hard mask layer on top of the dummy gate in the NMOS region, and forming silicon germanium regions embedded in the semiconductor substrate on both sides of the dummy gate structure in the PMOS region. After forming the silicon carbon regions and the silicon germanium regions, while retaining the hard mask layer on top of the dummy gates in the PMOS region, performing ion implant to form source/drain regions in the NMOS region and the PMOS region.

Abstract: An antenna module in provided. The antenna module includes a metal housing, a radiator and a feed conductor. The metal housing includes a housing surface and a through hole. The radiator surrounds the metal housing. The feed conductor connects the radiator to an inner circuit inside the metal housing via the through hole.

Abstract: An exemplary embodiment of the present disclosure illustrates a transmission interface device, and the transmission interface device comprises an antenna body. The antenna body comprises at least one electric coupling body and at least one magnetic coupling body at least covering or surrounding portion of the electric coupling body. When the antenna of the electronic device is close to the antenna body, the antenna body and the antenna of the electronic device selectively generate an electric coupling effect, a magnetic coupling effect, or a strong electromagnetic coupling effect, such that the transmission interface device can wirelessly charge the electronic device, or alternatively the transmission interface device and the electronic device can perform a power or data transmission.

Abstract: An exemplary embodiment of the present disclosure illustrates a rectifying module, which is operable for rectifying an alternating current (AC) signal into a direct current (DC) signal. The rectifying module includes a transmission line, at least one rectifying unit, and at least one pattern. The transmission line is configured for receiving and transmitting the alternating current signal. The rectifying unit is arranged neighboring to the transmission line for operatively coupling with the transmission line to receive a part of the alternating current signal and rectifies the alternating current signal into the DC signal. The pattern is configured to be a hollow grounding structure and the pattern is disposed under the dual-line coupling areas of the rectifying unit neighboring to the transmission line.

Abstract: In an antenna array, a metal layer is used for covering a block mapped by micro-strips, which are disposed on an obverse side of a base plate, on a reverse side of the base plate, so as to concentrating energy of radio signals emitted from radiator sets on a predetermined direction. The base plate and elements loaded by the base plate are fabricated according to designed specifications, so as to enhance the concentration of energy of the radio signals on the predetermined direction.

Abstract: The present invention provides a multi-working voltages CMOS device with single gate oxide layer thickness, gate work functions of CMOS transistors are regulated by implanting ions with different work functions into metal oxide dielectric material layers of the CMOS transistors, thus to realize different flat-band voltages under the condition of single dielectric layer thickness, and realize a multi-working voltages CMOS structure under the condition of single dielectric layer thickness. The present invention overcomes the process complexity of multiple kinds of gate dielectric layer thicknesses needed by traditional multi-working voltages CMOS, simplifies the CMOS process, makes the manufacturing procedure simple and easy to execute, reduces the preparation cost and is suitable for industrial production.

Abstract: A method for manufacturing a gate-last high-K CMOS structure comprising a first transistor and a second transistor, which is formed in a Si substrate includes: implanting acceptor impurity into a gate recess of the first transistor to form a first buried-layer heavily doping region under a channel of the first transistor; and implanting donor impurity into a gate recess of the second transistor to form a second buried-layer heavily doping region under a channel of the second transistor.

Abstract: To meet the requirements including dual-band, a high gain, and a broadside radiation formation, a dual band planar micro-strip antenna utilizing antenna array is provided. One array element includes a rectangle-shaped micro-strip antenna and an arrow-shaped micro-strip antenna. A first resonant frequency is determined by a length of the rectangle-shaped micro-strip antenna. Slots are dug for satisfying a second resonance frequency. Curved surfaces of the arrow-shaped micro-strip antenna designed according to an ellipse equation so that a frequency resonance is reached under both the first resonant frequency and a second resonant frequency, and a broadside radiation formation is thus generated. A T-shaped jointer distributes power between antenna elements according to the output impedances of the antenna elements. An L-shaped band-stop filter located on the T-shaped jointer is utilized to suppress frequency resonance resulted from multiples of the first resonant frequency.

Abstract: A multi-band microstrip meander-line antenna includes a substrate, two meander-shaped conductors, and two feed lines. The first meander-shaped conductor is disposed on the substrate in a first reciprocating bend manner for providing a resonant frequency band corresponding to a first operating frequency. The second meander-shaped conductor is disposed on the substrate in a second reciprocating bend manner for providing a resonant frequency band corresponding to a second operating frequency. The first feed line includes the first end electrically connected to a first feed point of the antenna and the second end electrically connected to the end of the first meander-shaped conductor. The second feed line includes the first end electrically connected to the second feed point of the antenna and the second end electrically connected to the end of the second meander-shaped conductor.

Abstract: A wireless power transmitting apparatus for remotely transmitting energy is implemented with a closed metal housing and a plurality of conductive plates disposed within the closed metal housing. With the aid of a high impedance between the closed metal housing and the conductive plates, a surface having the high impedance is formed on both the closed metal housing and the conductive plates for constraining electromagnetic power within the closed metal housing from dissipating and being consumed. The wireless power transmitting apparatus is not merely able to effectively and uniformly restrict electromagnetic field energy to the closed metal housing with the aid of the high impedance, but is also be able to raise a power transmitting efficiency between a power emitting device and a power receiving device.

Abstract: A bulk acoustic wave (BAW) resonator includes a substrate, and two electrodes stacked on the substrate, and at least one piezoelectric layer interposed between the two electrodes. The two electrodes and the piezoelectric layer are at least partially overlapped with each other in a vertical projection direction, and one of the two electrodes has a plurality of openings.

Abstract: Message handshaking and integration may be provided. A message may be created by a client in a first format. The client may determine whether a server in communication with the client is operable to deliver the message in a second format. If so, the client may provide the message, in the first format, to the server for delivering to at least one recipient in the second format.

Abstract: In an antenna array, a metal layer is used for covering a block mapped by micro-strips, which are disposed on an obverse side of a base plate, on a reverse side of the base plate, so as to concentrating energy of radio signals emitted from radiator sets on a predetermined direction. The base plate and elements loaded by the base plate are fabricated according to designed specifications, so as to enhance the concentration of energy of the radio signals on the predetermined direction.