Abstract: A color temperature tunable LED-filament includes an elongated light-transmissive substrate; a first array of LED chips on a front face of the substrate; a second array of LED chips on the front face of the substrate; a first photoluminescence layer covering the first array of LED chips; a second photoluminescence layer covering the second array of LED chips; and a circuit arrangement enabling independent power control to the first and second LED arrays or relative power control to the first and second array of LED chips to control the color temperature of light generated by the LED-filament.

Abstract: Disclosed are a monitoring, prevention and management method for preventing a drilling pump from pump suffocation and misoperation, and a pump pressure protection system therefor.

Abstract: Systems, apparatus and methods are provided for performing program operations in a non-volatile storage system. In one embodiment, there is provided a method that may comprise categorizing active storage blocks of a non-volatile storage device into a robust group and a less-robust group based on a number of factors including page error count, program time and number of Program/Erase (P/E) cycles; determining that a cache program operation needs to be performed; selecting a first storage block from the robust group to perform the cache program operation; determining that a regular program operation needs to be performed; and selecting a second storage block from the less-robust group to perform the regular program operation.

Abstract: The present disclosure discloses a method and apparatus for generating an optical frequency comb. The specific generation method comprises: receiving a pump laser that matches a thermally stable state of a nonlinear optical resonant cavity and causing the pump laser to oscillate in the nonlinear optical resonant cavity, such that a Brillouin gain corresponding to the pump laser coincides with a target longitudinal mode in the nonlinear optical resonant cavity; continuously generating a Brillouin laser at the target longitudinal mode in the case that a pump power of the pump laser exceeds a threshold for generating the Brillouin laser; and generating an optical frequency comb by using the Brillouin laser through a Kerr nonlinear four-wave mixing process. According to the technical solution of the present disclosure, the nonlinear optical resonant cavity with the Brillouin gain can generate an optical frequency comb in its thermally stable region.

Abstract: Apparatus and methods are provided for managing voltage drops on a semiconductor chip. One exemplary embodiment according to the present disclosure may provide a method for managing voltage drops in a semiconductor chip. The method may comprise monitoring power supply voltages for different voltage domains in the semiconductor chip by a voltage drop detection circuit, determining that a voltage drop event has occurred based on voltage information and duration information associated with the voltage drop event reported from the voltage drop detection circuit, generating diagnostic information that includes whether the voltage drop event is an external event or an internal event determined based on the voltage information and timing information reported from the voltage drop detection circuit, and taking an action based on the diagnosis information.

Abstract: The present disclosure discloses a multilayer circuit board comprising a plurality of metal layers, a blind via and/or a buried via, the multilayer circuit board is capable of transmitting signal between the different metal layers. The blind via has a pad on a non-opening side of the blind via. An upper or lower layer metal layer on the non-opening side of the blind via adjacent to the blind via has a first hole which is located in a position corresponding to the pad on the non-opening side of the blind via in a depth direction of the blind via; and/or an upper and/or lower layer adjacent to the buried via has a second hole which is located in a position corresponding to the pad of an upper and/or lower orifice of the buried via in a depth direction of the buried via.

Abstract: The present disclosure discloses a cutting method for an aluminum alloy casting, and a trimming die. The cutting method for the aluminum alloy casting includes the following steps of: drilling a part to be cut off of the aluminum alloy casting by multiple annular drills, and withdrawing the annular drills when the annular drills drill to a preset position; and separating multiple scraps to be separated from the aluminum alloy casting by the trimming die.

Abstract: Apparatus and methods are provided for managing voltage drops on a semiconductor chip. One exemplary embodiment according to the present disclosure may provide a method for managing voltage drops in a semiconductor chip. The method may comprise monitoring power supply voltages for different voltage domains in the semiconductor chip by a voltage drop detection circuit, determining that a voltage drop event has occurred based on voltage information and duration information associated with the voltage drop event reported from the voltage drop detection circuit, generating diagnostic information that includes whether the voltage drop event is an external event or an internal event determined based on the voltage information and timing information reported from the voltage drop detection circuit, and taking an action based on the diagnosis information.

Abstract: Systems, apparatus and methods are provided for performing cache program operations in a non-volatile storage system. A method may comprise issuing a first cache program operation from a storage controller to a non-volatile storage device to write data to a first regular block, writing the data to the first regular block and a copy of the data to a backup block, determining that a program error has occurred while writing the data to the first regular block, asserting the program error to the storage controller, retrieving a mapping between the first regular block and the backup block, issuing a read operation to read the copy of the data from the backup block, reading the copy of the data from the backup block and issuing a second cache program operation to write the data to a second regular block and marking the first regular block as defective.

Abstract: An LED-filament comprising: a partially light-transmissive substrate; a plurality of blue LED chips mounted on a front face of the substrate; first broad-band green to red photoluminescence materials and a first narrow-band manganese-activated fluoride red photoluminescence material covering the plurality of blue LED chips and the front face of the substrate; and second broad-band green to red photoluminescence materials covering the back face of the substrate. The LED-filament can further comprise a second narrow-band manganese-activated fluoride red photoluminescence material on the back face of the substrate in an amount that is less than 5 wt % of a total red photoluminescence material content on the back face of the substrate.

Abstract: Apparatus and methods are provided for managing operations of a semiconductor chip. In an exemplary embodiment, there is provided a semiconductor chip that may comprise a temperature sensor, a thermal heater, a processor and thermal control logic. The thermal control logic may be configured to: determine that a first temperature read-out from the temperature sensor reaches a first temperature threshold value, turn on the thermal heater, determine that a second temperature read-out from the temperature sensor reaches a second temperature threshold value that is lower than the first temperature threshold value, suspend functions of the processor, determine that a third temperature read-out from the temperature sensor reaches the first temperature threshold value, resume the functions of the processor, determine that a fourth temperature read-out from the temperature sensor reaches a third temperature threshold value that is higher than the first temperature threshold value and turn off the thermal heater.

Abstract: Systems, apparatus and methods are provided for electrical mirroring implemented by a storage controller in a non-volatile storage system. In one embodiment, a non-volatile storage system may comprise a plurality of non-volatile storage devices and a storage controller. The storage controller may be configured to perform an electrical mirroring configuration process comprising: determining a system topology of the non-volatile storage system and which targets are in mirrored non-volatile storage devices and setting respective register bits in the storage controller for all targets in all mirrored non-volatile storage devices of the plurality of non-volatile storage devices.

Abstract: Systems and apparatus are provided for a removable non-volatile storage device. An exemplary embodiment may provide an apparatus that may comprise a package that may have a first and a second sets of contact pins. The package may have a dimension and the first set of contact pins may be arranged according to a specification of a first type of storage device. The second set of contact pins may be configured to conduct a subset of electrical signals for a second type of storage device. The package may further comprise a controller inside the package and configured to function as the first type of storage device when the first set of contact pins are electrically connected to a host and as the second type of storage device when both the first set and the second set of contact pins are electrically connected to the host.

Abstract: An LED-filament comprising: a partially light transmissive substrate; a plurality of LED chips on a front face of the substrate; a photoluminescence material that is in direct contact with and covers all of the plurality of LED chips; and a light scattering layer that is in direct contact with and covers at least the photoluminescence material, wherein the light scattering layer comprises particles of light scattering material, and wherein the photoluminescence material comprises broadband green to red photoluminescence materials and narrowband red photoluminescence material.

Abstract: Systems, apparatus and methods are provided for temperature assisted non-volatile storage device management in a non-volatile storage system. In one embodiment, a non-volatile storage system may comprise a temperature sensor, a non-volatile storage device and a processor. The processor may be configured to obtain a read-out from the temperature sensor, generate a predicted real-time on-die temperature for the non-volatile storage device based on the read-out, generate an estimated threshold voltage for reading data stored in the non-volatile storage device based on the predicted real-time on-die temperature and conduct a local sweep of a reference voltage using the estimated threshold voltage as a starting point to obtain a final read reference voltage with a minimum read bit error rate.

Abstract: Apparatus and methods are provided for providing provide high-speed interconnect using bond wires. According to various aspects of the subject innovation, the provided techniques may provide a ground shape to shield a high-speed signal wire from the substrate in a semiconductor assembly. In an exemplary embodiment, there is provided an assembly that may comprise a substrate, a semiconductor die attached to the substrate, a signal bond wire connecting a bond pad on the semiconductor die and a bond finger on the substrate, and a ground shape on the substrate to shield the signal wire from the substrate.

Abstract: Systems, apparatus and methods are provided for multi-drop multi-load NAND interface topology where a number of NAND flash devices share a common data bus with a NAND controller. A method for controlling on-die termination in a non-volatile storage device may comprise receiving a chip enable signal on a chip enable signal line from a controller, receiving an on-die termination (ODT) command on a data bus from the controller while the chip enable signal is on, decoding the on-die termination command and applying termination resistor (RTT) settings in the ODT command to a selected non-volatile storage unit at the non-volatile storage device to enable ODT for the selected non-volatile storage unit.

Abstract: Systems, apparatus and methods are provided for electrical mirroring implemented by a storage controller in a non-volatile storage system. In one embodiment, a non-volatile storage system may comprise a plurality of non-volatile storage devices and a storage controller. The storage controller may be configured to perform an electrical mirroring configuration process comprising: determining a system topology of the non-volatile storage system and which targets are in mirrored non-volatile storage devices and setting respective register bits in the storage controller for all targets in all mirrored non-volatile storage devices of the plurality of non-volatile storage devices.

Abstract: A full spectrum white light emitting device comprising: a broadband solid-state excitation source operable to generate broadband blue excitation light; and at least one photoluminescence material which generates green to red light, wherein the device generates white light whose intensity over the blue to cyan region of the spectrum has a maximum percentage deviation from the intensity of light of a black-body or CIE Standard Illuminant D of less than 50%.

Abstract: This application discloses prodrug-based thermosensitive gel (“ProGel”) comprised of conjugates of dmg molecules with water-soluble polymeric carriers, which are capable of controlled release of the dmg molecules into the tissue of a subject. Use of the ProGel-Drug conjugates for treatment of various diseases or disorders and methods of preparing them are also disclosed.