Patents by Inventor Gene Lee

Gene Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220174101
    Abstract: Disclosed herein are system, apparatus, method and/or computer program product embodiments for providing survivable calling and conferencing. An embodiment operates by providing, by a first server, a first sub-conference to a plurality of user devices over first lines. The first sub-conference is combined with a second sub-conference to form a collective conference of the plurality of user devices. The first server accesses the conference. A second server is configured to provide the second sub-conference of the collective conference to the plurality of user devices over second lines, the first and second lines being distinct from each other. The collective conference may provide resilient and reliable sharing of information among participants and may leverage dispersed elements or diverse links simultaneously without impediments of echoes, loops, or other impacts.
    Type: Application
    Filed: December 7, 2021
    Publication date: June 2, 2022
    Inventors: Randall Paul Joseph ETHIER, Gene Lee HARRISON
  • Patent number: 11315787
    Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.
    Type: Grant
    Filed: March 17, 2020
    Date of Patent: April 26, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Tzu-shun Yang, Rui Cheng, Karthik Janakiraman, Zubin Huang, Diwakar Kedlaya, Meenakshi Gupta, Srinivas Guggilla, Yung-chen Lin, Hidetaka Oshio, Chao Li, Gene Lee
  • Patent number: 11268146
    Abstract: The present invention relates to a real-time PCR primer pair and probe for diagnosing Avellino corneal dystrophy, and more particularly to a real-time PCR primer pair and probe for diagnosing Avellino corneal dystrophy, which can accurately diagnose the presence or absence of a mutation in exon 4 of BIGH3 gene, which is responsible for Avellino corneal dystrophy. The use of the primer pair and probe according to the invention can diagnose Avellino corneal dystrophy in a more rapid and accurate manner than a conventional method that uses a DNA chip or PCR.
    Type: Grant
    Filed: April 6, 2018
    Date of Patent: March 8, 2022
    Assignee: Avellino Co., Ltd.
    Inventors: Gene Lee, Jung Kuk Yun
  • Publication number: 20220068661
    Abstract: A method of patterning a substrate is provided. The method includes modifying a surface of a metal-containing layer formed over a substrate positioned in a processing region of a processing chamber by exposing the surface of the metal-containing layer to plasma effluents of a chlorine-containing gas precursor and an oxygen-containing gas precursor to form a modified surface of the metal-containing layer. The method further includes directing plasma effluents of an inert gas precursor towards the modified surface of the metal-containing layer. The plasma effluents of the inert gas precursor are directed by applying a bias voltage to a substrate support holding the substrate. The method further includes anisotropically etching the modified surface of the metal-containing layer with the plasma effluents of the inert gas precursor to form a first recess having a first sidewall in the metal-containing layer.
    Type: Application
    Filed: July 29, 2021
    Publication date: March 3, 2022
    Inventors: Jonathan SHAW, Priyadarshi PANDA, Nancy FUNG, Yongchang DONG, Somaye RASOULI, Gene LEE
  • Patent number: 11196782
    Abstract: Disclosed herein are system, apparatus, method and/or computer program product embodiments for providing survivable calling and conferencing. An embodiment operates by providing, by a first server, a first sub-conference to a plurality of user devices over first lines. The first sub-conference is combined with a second sub-conference to form a collective conference of the plurality of user devices. The first server accesses the conference. A second server is configured to provide the second sub-conference of the collective conference to the plurality of user devices over second lines, the first and second lines being distinct from each other. The collective conference may provide resilient and reliable sharing of information among participants and may leverage dispersed elements or diverse links simultaneously without impediments of echoes, loops, or other impacts.
    Type: Grant
    Filed: December 11, 2020
    Date of Patent: December 7, 2021
    Assignee: The MITRE Corporation
    Inventors: Randall Paul Joseph Ethier, Gene Lee Harrison
  • Publication number: 20210314373
    Abstract: Disclosed herein are system, apparatus, method and/or computer program product embodiments for providing survivable calling and conferencing. An embodiment operates by providing, by a first server, a first sub-conference to a plurality of user devices over first lines. The first sub-conference is combined with a second sub-conference to form a collective conference of the plurality of user devices. The first server accesses the conference. A second server is configured to provide the second sub-conference of the collective conference to the plurality of user devices over second lines, the first and second lines being distinct from each other. The collective conference may provide resilient and reliable sharing of information among participants and may leverage dispersed elements or diverse links simultaneously without impediments of echoes, loops, or other impacts.
    Type: Application
    Filed: December 11, 2020
    Publication date: October 7, 2021
    Inventors: Randall Paul Joseph ETHIER, Gene Lee HARRISON
  • Patent number: 11127599
    Abstract: Methods for etching a hardmask layer to transfer features into a material layer using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features through a proper sidewall and bottom management scheme during the hardmask open process. In one embodiment, a method for etching a hardmask layer to form features in the hardmask layer includes supplying an etching gas mixture onto a substrate to etch an exposed portion of a hardmask layer exposed by a patterned photoresist layer disposed on the substrate, switching the etching gas mixture to a deposition gas mixture comprising a silicon containing gas to form a passivation layer on sidewalls of the hardmask layer and forming openings in the hardmask layer.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: September 21, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Shan Jiang, Gene Lee, Akhil Mehrotra, Zohreh Hesabi
  • Publication number: 20210268452
    Abstract: An apparatus and system for managing the level of dissolved gases in water for aquatic life that provides sufficient water with sufficient oxygen saturation, without introducing excessive amounts of bubbles, and that can adequately degas or strip harmful dissolve gases from the water. The apparatus can generally comprise a storage compartment, a filter compartment, and a pump compartment. The filter compartment can be coupled with the storage compartment and comprise a filter element. The pump compartment can be coupled with the storage compartment and comprise a venturi air intake port, a degassing vent, a pump filter element, and a pump assembly. The pump assembly can comprise a venturi nozzle coupled with the venturi air intake port and a flow pump in fluid communication with a flow pump intake port. The pump filter element can at least partially encircle the flow pump intake port.
    Type: Application
    Filed: February 26, 2021
    Publication date: September 2, 2021
    Inventor: Bobby Gene Lee
  • Publication number: 20210180131
    Abstract: Methods for detecting single nucleotide polymorphisms (SNPs) associated with atopic dermatitis in a sample from a subject and methods for treating atopic dermatitis in a subject indeed thereof are described.
    Type: Application
    Filed: November 17, 2020
    Publication date: June 17, 2021
    Inventor: Gene Lee
  • Patent number: 10957558
    Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.
    Type: Grant
    Filed: March 24, 2020
    Date of Patent: March 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Akhil Mehrotra, Gene Lee, Abhijit Patil, Shan Jiang, Zohreh Hesabi
  • Patent number: 10875781
    Abstract: Reactions are disclosed in which phosphine and hydrogen fluoride are reacted to produce a phosphorus pentafluoride containing gas according the stoichiometry: PH3+4F2?PF5+3HF Further reaction using the phosphorus pentafluoride to produce lithium hexafluorophosphate are also disclosed.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: December 29, 2020
    Inventor: Gene Lee Hunsucker
  • Patent number: 10868843
    Abstract: Disclosed herein are system, apparatus, method and/or computer program product embodiments for providing survivable calling and conferencing. An embodiment operates by providing, by a first server, a first sub-conference to a plurality of user devices over first lines. The first sub-conference is combined with a second sub-conference to form a collective conference of the plurality of user devices. The first server accesses the conference. A second server is configured to provide the second sub-conference of the collective conference to the plurality of user devices over second lines, the first and second lines being distinct from each other. The collective conference may provide resilient and reliable sharing of information among participants and may leverage dispersed elements or diverse links simultaneously without impediments of echoes, loops, or other impacts.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: December 15, 2020
    Assignee: The MITRE Corporation
    Inventors: Randall Paul Joseph Ethier, Gene Lee Harrison
  • Patent number: 10867795
    Abstract: A method of etching a hardmask layer formed on a substrate is provided. The method includes supplying an etching gas mixture to a processing region of a processing chamber. A device is disposed in the processing region when the etching gas mixture is supplied to the processing region. The device comprises a substrate and a hardmask layer formed over the substrate. The etching gas mixture comprises a fluorine-containing gas, a silicon-containing gas, and an oxygen-containing gas. The method further includes providing RF power to the etching gas mixture to form a plasma in the processing region. The plasma is configured to etch exposed portions of the hardmask layer.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: December 15, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Nancy Fung, Gene Lee, Hailong Zhou, Zohreh Hesabi, Akhil Mehrotra, Shan Jiang, Abhijit Patil, Chi-I Lang, Larry Gao
  • Publication number: 20200335338
    Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.
    Type: Application
    Filed: March 17, 2020
    Publication date: October 22, 2020
    Inventors: Tzu-Shun YANG, Rui CHENG, Karthik JANAKIRAMAN, Zubin HUANG, Diwakar KADLAYA, Meenakshi GUPTA, Srinivas GUGGILLA, Yung-chen LIN, Hidetaka OSHIO, Chao LI, Gene LEE
  • Publication number: 20200335339
    Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.
    Type: Application
    Filed: May 5, 2020
    Publication date: October 22, 2020
    Inventors: Tzu-shun YANG, Rui CHENG, Karthik JANAKIRAMAN, Zubin HUANG, Diwakar KEDLAYA, Meenakshi GUPTA, Srinivas GUGGILLA, Yung-chen LIN, Hidetaka OSHIO, Chao LI, Gene LEE
  • Publication number: 20200227276
    Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.
    Type: Application
    Filed: March 24, 2020
    Publication date: July 16, 2020
    Inventors: Akhil MEHROTRA, Gene LEE, Abhijit PATIL, Shan JIANG, Zohreh HESABI
  • Publication number: 20200202975
    Abstract: A genetic information processing system includes: a control unit, configured to: receive an indel analysis tandem repeat k-mer of sequence length k nucleotides from a genome tandem repeat reference catalogue, wherein the indel analysis tandem repeat k-mer is unique within a reference human genome and include: a reference tandem repeat sequence; and flanking sequences directly preceding and following the reference tandem repeat sequence; analyze a DNA sample set, including a healthy sample DNA information and a cancerous sample DNA information, based on the genome tandem repeat reference catalogue including: identify a corresponding healthy sample sequence in the healthy sample DNA information and a corresponding cancerous sample sequence in the cancerous sample DNA information corresponding the indel analysis tandem repeat k-mer; determine whether the corresponding cancerous sample sequence includes a tumorous indel mutation based on a comparison between the corresponding cancerous sample sequence and the cor
    Type: Application
    Filed: December 19, 2018
    Publication date: June 25, 2020
    Inventor: Gene Lee
  • Publication number: 20200184765
    Abstract: A camera captures a display of a gaming device and determines information that appears on the display. The camera is mounted on a video gaming device, and the camera continuously or at various intervals captures images of the screen of the video gaming device. Those images are analyzed to determine information displayed on the video gaming device, such as game speed (e.g., time between handle pulls, total time of play, handle pulls during a session, etc.), bet amounts, bet lines, credits, etc. This information may be determined in various ways, such as by using image processing of images captured by the camera. Machine learning algorithms may also be used to infer key information displayed on the screen of the video gaming device to capture and/or analyze. A housing of the camera may also have a secondary display oriented in a similar direction as the screen of the video gaming device.
    Type: Application
    Filed: December 5, 2019
    Publication date: June 11, 2020
    Inventors: Thompson Nguyen, Jayendu Sharma, Joshua Frank, Gene Lee
  • Patent number: 10636675
    Abstract: A method of removing a metal-containing layer (e.g., tungsten) from a substrate is provided. The method includes generating a first plasma in a process volume of a plasma chamber when a patterned device is disposed on a substrate support in the process volume. The patterned device includes a patterned region and an unpatterned region; a substrate; a tungsten-containing layer formed over the substrate; a supporting layer disposed between the tungsten-containing layer and the substrate. The patterned region includes exposed surfaces of the supporting layer and the unpatterned region does not include any exposed surfaces of the supporting layer. The method further includes depositing a first film over the patterned region of the tungsten-containing layer with the first plasma; and removing portions of the unpatterned region of the tungsten-containing layer with the first plasma without depositing the first film over the unpatterned region.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: April 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Akhil Mehrotra, Gene Lee, Abhijit Patil, Shan Jiang, Zohreh Hesabi
  • Patent number: 10497578
    Abstract: Methods for etching a bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) to form high aspect ratio features using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features with high aspect ratios through a proper sidewall and bottom management scheme during the bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) open process.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: December 3, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Hailong Zhou, Gene Lee, Abhijit Patil, Shan Jiang, Akhil Mehrotra, Jonathan Kim