Abstract: The present invention includes a method for forming a memory array and the memory array produced therefrom. Specifically, the memory array includes at least one first-type memory device, each of the at least one first-type memory device comprising a first transistor and a first underlying capacitor that are in electrical contact to each other through a first buried strap, where the first buried strap positioned on a first collar region; and at least one second-type memory cell, where each of the at least are second-type memory device comprises a second transistor and a second underlying capacitor that are in electrical contact through an offset buried strap, where the offset buried strap is positioned on a second collar region, wherein the second collar region has a length equal to the first collar region.

Abstract: A novel transistor structure for a DRAM cell includes two deep trenches, one trench including a vertical storage cell for storing the data and the second trench including a vertical control cell for controlling the p-well voltage, which, in effect, places part of the p-well in a floating condition thus decreasing the threshold voltage as compared to when the vertical pass transistor is in an off-state. This enables the transistor to exhibit increased gate overdrive and drive current during an active wordline voltage commonly applied to both gates of the storage and control cells.

Abstract: A method of formation of a deep trench vertical transistor is provided. A deep trench with a sidewall in a doped semiconductor substrate is formed. The semiconductor substrate includes a counterdoped drain region in the surface thereof and a channel alongside the sidewall. The drain region has a top level and a bottom level. A counterdoped source region is formed in the substrate juxtaposed with the sidewall below the channel. A gate oxide layer is formed on the sidewalls of the trench juxtaposed with a gate conductor. Perform the step of recessing the gate conductor below the bottom level of the drain region followed by performing angled ion implantation at an angle ?+? with respect to vertical of a counterdopant into the channel below the source region and performing angled ion implantation at an angle ? with respect to vertical of a dopant into the channel below the source.

Abstract: A method for dynamic in-situ characterization of in-plane and out-plane thermal drift of a hard disk drive head suspension is provided. A first data track is written. Amplitude and amplitude modulation of the write data signal are measured and track center is determined. Data tracks are then written for a selected time period. Amplitude and amplitude modulation of the write data signal is measured and a new track center of a last data track is determined. Any difference between the track center of the first data track and the track center of the last data track represents in-plane drift. The amplitude and amplitude modulation of the two write data signals is compared and any difference between the measured values is proportional to out-plane drift.

Abstract: Provision of a body control contact adjacent a transistor and between the transistor and a contact to the substrate or well in which the transistor is formed allows connection and disconnection of the substrate of the transistor to and from a zero (ground) or substantially arbitrary low voltage in accordance with control signals applied to the gate of the transistor to cause the transistor to exhibit a variable threshold which maintains good performance at low supply voltages and reduces power consumption/dissipation which is particularly advantageous in portable electronic devices. Floating body effects (when the transistor substrate in disconnected from a voltage source in the “on” state) are avoided since the substrate is discharged when the transistor is switched to the “off” state. The transistor configuration can be employed with both n-type and p-type transistors which may be in complementary pairs.

Abstract: A method and apparatus for detecting a defective disk for a hard disk drive. The method includes placing a disk into a tester so that a first side of the disk is adjacent to a first head of the tester and a second side of the disk is adjacent to a second head. First data is read from the first side of the disk, and second data is read from the second side of the disk. The disk is then flipped so that the second side is adjacent to the first head and the first side is adjacent to the second head. Third data is read from the first side. Fourth data is read from the second side. A first area between a curve generated from the first data and a curve generated from the third data is calculated. Likewise, a second area is calculated between a curve generated from the second data and a curve generated from the fourth data. An average of the first and second areas is then calculated and used to detect a defective disk.

Abstract: A method for dynamic in-situ characterization of in-plane and out-plane thermal drift of a hard disk drive head suspension is provided. A first data track is written. Amplitude and amplitude modulation of the write data signal are measured and track center is determined. Data tracks are then written for a selected time period. Amplitude and amplitude modulation of the write data signal is measured and a new track center of a last data track is determined. Any difference between the track center of the first data track and the track center of the last data track represents in-plane drift. The amplitude and amplitude modulation of the two write data signals is compared and any difference between the measured values is proportional to out-plane drift.

Abstract: A method of formation of a deep trench vertical transistor is provided. A deep trench with a sidewall in a doped semiconductor substrate is formed. The semiconductor substrate includes a counterdoped drain region in the surface thereof and a channel alongside the sidewall. The drain region has a top level and a bottom level. A counterdoped source region is formed in the substrate juxtaposed with the sidewall below the channel. A gate oxide layer is formed on the sidewalls of the trench juxtaposed with a gate conductor.

Abstract: A continuous method for manufacturing crystallized glass plates includes the steps of melting a raw crystallizable glass material to form molten glass, adjusting the molten glass to have a predetermined viscosity, rolling the molten glass to form a belt of crystallizable glass, and passing the belt of crystallizable glass through a crystallization tunnel so as to form a belt of crystallized glass.

Abstract: The present invention is a method and system to determine a quality of a head in a hard disk drive. The method comprises providing a disk having a at least one side with a plurality of tracks, writing on a predetermined track on the plurality of tracks and reading a profile of the predetermined track to provide a first profile value. The head is then moved to an adjacent track where it writes on the adjacent track. A profile of the predetermined track is then read to provide a second profile value. A quality of the head can then be determined based on the first and second values.

Abstract: Thermal pole tip protrusion is caused by the materials in and around the head slider expanding during write operations till part of those materials protrude, leading to contact with the rotating disk surface, altering the flying height and often wearing down part of the disk surface. While it is well known that read-write heads expand during writing, the inventors are unaware of anyone else who recognized this situation's significance, particularly as the flying height decreases and the data rates increase, both of which are required for high areal density disk drives. The inventors realized that they could detect the problem at the spin stand level by testing head gimbal assemblies to reliably, and inexpensively, predict the tendency for thermal pole tip protrusion. This leads to selection of head gimbal assemblies, which do not have the thermal pole tip protrusion tendency.

Abstract: The present invention is a method and system to determine a quality of a head in a hard disk drive. The method comprises providing a disk having a at least one side with a plurality of tracks, writing on a predetermined track on the plurality of tracks and reading a profile of the predetermined track to provide a first profile value. The head is then moved to an adjacent track where it writes on the adjacent track. A profile of the predetermined track is then read to provide a second profile value. A quality of the head can then be determined based on the first and second values.

Abstract: A method to test an instability of a magneto-resistive (MR) head. The instability is tested by first writing a signal onto a track. The junctions of the MR head are aligned with various track edges and the head characteristics are then measured. The characteristics may include determining a maximum amplitude covarian and a maximum base line popping noise.

Abstract: A method to test an instability of a magneto-resistive (MR) head. The instability is tested by first writing a signal onto a track. The junctions of the MR head are aligned with various track edges and the head characteristics are then measured. The characteristics may include determining a maximum amplitude covarian and a maximum base line popping noise.