Abstract: Techniques are provided for reading a memory cell capable of storing three or more logic states. To read the memory cell, a charge may be transferred between a digit line and a sense component using a charge transfer device. The charge may be transferred by biasing a gate of the charge transfer device to a first voltage and discharging the memory cell onto the digit line, which may result in the digit line being biased to a second voltage. Based on whether the second voltage exceeds the first voltage, the charge transfer device may transfer the charge associated with the memory cell (e.g., and discharged onto the digit line) to the sense component. A charge may be transferred from a memory cell to a sense component based on a value of the logic state stored to the memory cell.

Abstract: Techniques are provided for writing a high-level state to a memory cell capable of storing three or more logic states. After a sense operation performed by a first sense component and a second sense component, a digit line may be isolated from the first sense component and the second sense component. The high-level state may be stored in the memory cell, then a second state may be stored in the memory cell, in which the second state may be a mid-level state or a low-level state. The second state may be stored based on a write-back component identifying that the second state was stored in the memory cell before the write back procedure.

Abstract: Techniques are provided for sensing a signal associated with a memory cell capable of storing three or more logic states. To sense the memory cell (e.g., a signal associated with the memory cell), a charge may be transferred between a digit line and a node coupled with a plurality of sense components using a charge transfer device. Once the charge is transferred, at least some if not each of the plurality of sense components may sense the charge using one of a variety of sensing schemes. For example, the charge may be sensed by each sense component at a same time using a single fixed reference value, or at different times using different fixed reference values. Based on the charge being transferred or transferred with the node (e.g., using the charge transfer device) and each sense component sensing the charge, a logic state associated with the memory cell may be determined.

Abstract: Provided herein are memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.

Abstract: A memory device may include a phase driver circuit that may output a first voltage for refreshing a plurality of memory cells. The memory device may also include a plurality of word line driver circuits that may receive the first voltage via the phase driver circuit, such that each word line driver circuit of the plurality of word line driver circuits may provide the first voltage to a respective word line associated with a respective portion of the plurality of memory cells. In addition, each word line driver circuit may refresh the respective portion of the plurality of memory cells based on a respective word line enable signal provided to a first switch of the respective word line driver circuit.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as read-only memory by not implementing erase or write commands. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to compare an address of a received command to the one or more addresses, and at least in part based on the comparison, determine not to implement the received command. The circuitry can be further configured to return an error message after determining not to implement the received command.

Abstract: Methods, systems, and devices for storing and reading data at a memory device are described. A memory device may utilize one or more storage states to store data within a data word. The memory device may exhibit higher data leakage or more power consumption when storing or reading a first storage state compared to storing or reading one or more other storage states. In some cases, the memory device may generate a second data word corresponding to a first data word by modifying each symbol type of the first data word to generate a different symbol type for the second data word. A memory device may reduce the occurrence of a storage state associated with large data leakage, or high-power consumption, or both. Further, the memory device may generate and store an indicator indicating the transformation of a corresponding data word.

Abstract: Memory devices, system, and methods for operating the same are provided. The memory device can comprise a non-volatile memory array and control circuitry. The control circuitry can be configured to store a value corresponding to a number of activate commands received at the memory device, update the value in response to receiving an activate command received from a host device, and trigger, in response to the value exceeding a predetermined threshold, a remedial action performed by the memory device. The control circuitry can be further configured to store a second value corresponding to a number of refresh operations performed by the memory device, update the second value in response to performing a refresh operation, and trigger, in response to the value exceeding a second predetermined threshold, a second remedial action performed by the memory device.

Abstract: Devices and methods for a sensing scheme are described. A device may include a memory array and a column select line configured to couple with a single page of a set of pages within the memory array when the single page is selected during an access operation. The column select line may be isolated from other pages (e.g., unselected pages) of the set. The device may include a set of sense component groups coupled with the single page. Each sense component group of the set may be configured to access one or more memory cells of the single page using the column select line. The device may include a decoding component configured to couple a sense component group of the set with an I/O line of an I/O channel. The device may communicate information with the I/O line during the access operation.

Abstract: Techniques are provided for writing a high-level state to a memory cell capable of storing three or more logic states. After a sense operation performed by a first sense component and a second sense component, a digit line may be isolated from the first sense component and the second sense component. The high-level state may be stored in the memory cell, then a second state may be stored in the memory cell, in which the second state may be a mid-level state or a low-level state. The second state may be stored based on a write-back component identifying that the second state was stored in the memory cell before the write back procedure.

Abstract: Techniques are provided for sensing a signal associated with a memory cell capable of storing three or more logic states. To sense the memory cell (e.g., a signal associated with the memory cell), a charge may be transferred between a digit line and a node coupled with a plurality of sense components using a charge transfer device. Once the charge is transferred, at least some if not each of the plurality of sense components may sense the charge using one of a variety of sensing schemes. For example, the charge may be sensed by each sense component at a same time using a single fixed reference value, or at different times using different fixed reference values. Based on the charge being transferred or transferred with the node (e.g., using the charge transfer device) and each sense component sensing the charge, a logic state associated with the memory cell may be determined.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as read-only memory by not implementing erase or write commands. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to compare an address of a received command to the one or more addresses, and at least in part based on the comparison, determine not to implement the received command. The circuitry can be further configured to return an error message after determining not to implement the received command.

Abstract: A memory device may include a phase driver circuit that may output a first voltage for refreshing a plurality of memory cells. The memory device may also include a plurality of word line driver circuits that may receive the first voltage via the phase driver circuit, such that each word line driver circuit of the plurality of word line driver circuits may provide the first voltage to a respective word line associated with a respective portion of the plurality of memory cells. In addition, each word line driver circuit may refresh the respective portion of the plurality of memory cells based on a respective word line enable signal provided to a first switch of the respective word line driver circuit.

Abstract: Provided herein are memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.

Abstract: Memory devices, system, and methods for operating the same are provided. The memory device can comprise a non-volatile memory array and control circuitry. The control circuitry can be configured to store a value corresponding to a number of activate commands received at the memory device, update the value in response to receiving an activate command received from a host device, and trigger, in response to the value exceeding a predetermined threshold, a remedial action performed by the memory device. The control circuitry can be further configured to store a second value corresponding to a number of refresh operations performed by the memory device, update the second value in response to performing a refresh operation, and trigger, in response to the value exceeding a second predetermined threshold, a second remedial action performed by the memory device.

Abstract: Techniques are provided for sensing a signal associated with a memory cell capable of storing three or more logic states. To sense a state of the memory cell, a charge may be transferred between a digit line and a node coupled with a plurality of sense components using a charge transfer device. Once the charge is transferred, one or more of the plurality of sense components may sense the charge with one of a variety of sensing schemes. Based on the charge being transferred using the charge transfer device and each sense component sensing the charge, a logic state associated with the memory cell may be determined. The number of sensed states may be correlated to the number of sense amplifiers. The ratio of the number of states read by the first sense component and the second sense component to the number of sense components may be greater than one.

Abstract: Methods, systems, and devices for storing and reading data at a memory device are described. A memory device may utilize one or more storage states to store data within a data word. The memory device may exhibit higher data leakage or more power consumption when storing or reading a first storage state compared to storing or reading one or more other storage states. In some cases, the memory device may generate a second data word corresponding to a first data word by modifying each symbol type of the first data word to generate a different symbol type for the second data word. A memory device may reduce the occurrence of a storage state associated with large data leakage, or high-power consumption, or both. Further, the memory device may generate and store an indicator indicating the transformation of a corresponding data word.

Abstract: Methods, systems, and devices for phase charge sharing are described. In some memory systems or memory devices, one or more decoders may be used to bias access lines of a memory die. The decoders may transfer voltage or current between a first conductive line of the decoder and a second conductive line of the decoder via a shorting device. Transferring the voltage or current may be performed as part of or in association with an operation (e.g., an activate or pre-charge operation) to access one or more memory cells of the memory die. In some examples, the decoders may transfer voltage or current between a first conductive line of a decoder associated with a first refresh activity and a second conductive line of the decoder associated with a second refresh activity via a shorting device.

Abstract: Provided herein are memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.

Abstract: Systems, devices, and methods for charging a node of a sense component during an access operation are described. The node of the sense component may be coupled with a charge transfer device and with a voltage source using a switching component. The voltage source may be configured to output different voltages (e.g., two different precharge voltages) during different phases of the access operation. The switching component may be configured to selectively couple the node with the voltage source and the different voltages may be used to precharge the node during different phases of the access operation. The different voltages of the voltage source may provide an adequate sense window.