Abstract: In various embodiments, the invention relates to a peptide-based vaccine targeting bacterial hyaluronidase. In some embodiments, the invention includes isolated antibodies which have been raised in response to the bacterial hyaluronidase or one or more portions thereof, compositions or vaccines described herein. The invention further relates to kits for using the peptides, compositions, or antibodies described herein. In still further aspects, the invention also relates to methods for using the peptides, compositions, vaccines, or antibodies.

Abstract: The present invention describes compositions and related methods and kits for treating a variety of inflammatory conditions and infections. The therapeutic compositions include certain hyaluronidases capable of generating hyaluronan disaccharides when combined with hyaluronan, and/or the hyaluronan disaccharides themselves, and/or inflammatory hyaluronidase inhibitors. The invention further discloses the use of hyaluronidase inhibitors to treat certain infections in an individual.

Abstract: The invention relates to a method for measuring dimensions of a target object. The method comprises acquiring depth data representative of the physical space, the depth data comprising data of the target object, converting the depth data into a point cloud, extracting at least one plane from the point cloud, identifying a ground plane, eliminating the ground plane from the point cloud, extracting at least one point cluster from the remaining point cloud, identifying a point cluster of the target object, estimating dimensions of the target object based on the point cluster of the target object.

Abstract: The present invention describes compositions and related methods and kits for treating a variety of inflammatory conditions and infections. The therapeutic compositions include certain hyaluronidases capable of generating hyaluronan disaccharides when combined with hyaluronan, and/or the hyaluronan disaccharides themselves, and/or inflammatory hyaluronidase inhibitors. The invention further discloses the use of hyaluronidase inhibitors to treat certain infections in an individual.

Abstract: A recovery system and method with repeating communication functionality includes a station configured to send a first message and at least a first remote transmitting unit responsive to the central station and configured to transmit a second message to a locating unit. At least a second remote transmitting unit includes a receiver which receives the second message, a controller configured to process the second message, and a transmitter for transmitting a third message to the locating unit.

Abstract: A recovery system and method with repeating communication functionality includes a station configured to send a first message and at least a first remote transmitting unit responsive to the central station and configured to transmit a second message to a locating unit. At least a second remote transmitting unit includes a receiver which receives the second message, a controller configured to process the second message, and a transmitter for transmitting a third message to the locating unit.

Abstract: The present invention describes compositions and related methods and kits for treating a variety of inflammatory conditions and infections. The therapeutic compositions include certain hyaluronidases capable of generating hyaluronan disaccharides when combined with hyaluronan, and/or the hyaluronan disaccharides themselves, and/or inflammatory hyaluronidase inhibitors. The invention further discloses the use of hyaluronidase inhibitors to treat certain infections in an individual.

Abstract: Contrast enhancing exposure apparatus and method for use in semiconductor fabrication are described. In one embodiment, a method for forming a pattern on a substrate, wherein the substrate includes a photoresist layer comprising photoacid generators (“PAGs”) and photobase generators (“PBGs”), is described.

Abstract: Methods of forming a semiconductor structure and the semiconductor structure are disclosed. In one embodiment, a method includes forming a gate dielectric layer over a substrate, forming a gate electrode layer over the gate dielectric layer, and etching the gate electrode layer and the gate dielectric layer to form a horizontal gate structure and a vertical gate structure, wherein the horizontal gate structure and the vertical gate structure are connected by an interconnection portion. The method further includes forming a photoresist covering the horizontal gate structure and the vertical gate structure, with the photoresist having a gap exposing the interconnection portion between the horizontal gate structure and the vertical gate structure, and then etching the interconnection portion.

Abstract: A recovery system and method with repeating communication functionality includes a station configured to send a first message and at least a first remote transmitting unit responsive to the central station and configured to transmit a second message to a locating unit. At least a second remote transmitting unit includes a receiver which receives the second message, a controller configured to process the second message, and a transmitter for transmitting a third message to the locating unit.

Abstract: A method of forming a semiconductor structure includes forming a photoresist layer over a substrate. The photoresist layer includes a first material removable by a removal process. The first material at a guard band portion of the photoresist layer along an edge portion of the photoresist layer is converted to a second material. The second material is not removable by the removal process. Also, the first material at the edge portion of the photoresist layer is not converted to the second material. The guard band portion is farther from a periphery of the substrate than the edge portion. The removal process is performed to remove the first material after the conversion of the guard band portion.

Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.

Abstract: A recovery system and method with repeating communication functionality includes a station configured to send a first message and at least a first remote transmitting unit responsive to the central station and configured to transmit a second message to a locating unit. At least a second remote transmitting unit includes a receiver which receives the second message, a controller configured to process the second message, and a transmitter for transmitting a third message to the locating unit.

Abstract: An embodiment of a feed-forward method of determining a photomask pattern is provided. The method includes providing design data associated with an integrated circuit device. A thickness of a coating layer to be used in fabricating the integrated circuit device is predicted based on the design data. This prediction is used to generate a gradating pattern. A photomask is formed having the gradating pattern.

Abstract: A method of patterning a semiconductor device including dividing a layout into more than one pattern. The method further includes depositing a film stack on a semiconductor substrate, depositing a hard mask on the film stack, and depositing a first photoresist on the hard mask. The method further includes patterning the first photoresist using a first pattern of the more than one pattern. The method further includes etching the hard mask to transfer a design of the first pattern of the more than one pattern to the hard mask. The method further includes depositing a second photoresist over the etched hard mask and patterning the second photoresist using a second pattern of the more than one pattern. The method further includes etching portions of the film stack exposed by a combination of the etched hard mask and the second photoresist.

Abstract: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.

Abstract: A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.

Abstract: System and method for enhancing optical lithography methodology for hole patterning in semiconductor fabrication are described. In one embodiment, a photolithography system comprises an illumination system for conditioning light from a light source, the illumination system producing a three-pore illumination pattern; a reticle comprising at least a portion of a pattern to be imaged onto a substrate, wherein the three-pore illumination pattern produced by the illumination system is projected through the reticle; and a projection lens disposed between the reticle and the substrate.

Abstract: A method of patterning a semiconductor device including dividing a layout into more than one pattern. The method further includes depositing a film stack on a semiconductor substrate, depositing a hard mask on the film stack, and depositing a first photoresist on the hard mask. The method further includes patterning the first photoresist using a first pattern of the more than one pattern. The method further includes etching the hard mask to transfer a design of the first pattern of the more than one pattern to the hard mask. The method further includes depositing a second photoresist over the etched hard mask and patterning the second photoresist using a second pattern of the more than one pattern. The method further includes etching portions of the film stack exposed by a combination of the etched hard mask and the second photoresist.

Abstract: A method of forming a semiconductor structure includes forming a photoresist layer over a substrate. The photoresist layer includes a first material removable by a removal process. The first material at a guard band portion of the photoresist layer along an edge portion of the photoresist layer is converted to a second material. The second material is not removable by the removal process. Also, the first material at the edge portion of the photoresist layer is not converted to the second material. The guard band portion is farther from a periphery of the substrate than the edge portion. The removal process is performed to remove the first material after the conversion of the guard band portion.