Patents by Inventor George Liu
George Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8472005Abstract: System and method for enhancing optical lithography methodology for hole patterning in semiconductor fabrication are described. In one embodiment, a photolithography system comprises an illumination system for conditioning light from a light source, the illumination system producing a three-pore illumination pattern; a reticle comprising at least a portion of a pattern to be imaged onto a substrate, wherein the three-pore illumination pattern produced by the illumination system is projected through the reticle; and a projection lens disposed between the reticle and the substrate.Type: GrantFiled: February 22, 2007Date of Patent: June 25, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: George Liu, Kuei Shun Chen, Norman Chen, Vencent Chang, Chin-Hsiang Lin
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Patent number: 8431291Abstract: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.Type: GrantFiled: October 25, 2011Date of Patent: April 30, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: George Liu, Kuei Shun Chen, Chih-Yang Yeh, Te-Chih Huang, Wen-Hao Liu, Ying-Chou Cheng, Boren Luo, Tsong-Hua Ou, Yu-Po Tang, Wen-Chun Huang, Ru-Gun Liu, Shu-Chen Lu, Yu Lun Liu, Yao-Ching Ku, Tsai-Sheng Gau
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Patent number: 8394576Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.Type: GrantFiled: January 10, 2012Date of Patent: March 12, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Tzu Lu, Kuei Shun Chen, Tsiao-Chen Wu, Vencent Chang, George Liu
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Patent number: 8237297Abstract: The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a substrate having a device region and an alignment region; a first shallow trench isolation (STI) feature in the alignment region and having a first depth D1; a second STI feature in the device region and having a second depth D2; an alignment mark with patterned features overlying the first STI in the alignment region; and a gate stack formed on an active region in the device region.Type: GrantFiled: July 13, 2010Date of Patent: August 7, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuei Shun Chen, Meng-Wei Chen, George Liu, Jiann Yuan Huang, Chia-Ching Lin
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Publication number: 20120114872Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.Type: ApplicationFiled: January 10, 2012Publication date: May 10, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsiao-Tzu Lu, Keui Shun Chen, Tsiao-Chen Wu, Vencent Chang, George Liu
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Patent number: 8169252Abstract: A low voltage drop unidirectional electronic valve constituted of: a first terminal; a second terminal; a first electronically controlled switch coupled between the first terminal and the second terminal; and a first charge pump arranged to close the first electronically controlled switch when the voltage potential at the first terminal is greater than the voltage potential at the second terminal by a first value. The first charge pump is arranged in a closed loop with the first electronically controlled switch so as to continuously maintain the voltage potential at the first terminal greater than the voltage potential at the second terminal by the first value.Type: GrantFiled: June 15, 2010Date of Patent: May 1, 2012Assignee: Microsemi CorporationInventors: Shawn Anthony Fahrenbruch, George Liu
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Patent number: 8124323Abstract: The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.Type: GrantFiled: September 25, 2007Date of Patent: February 28, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Tzu Lu, Keui Shun Chen, Tsiao-Chen Wu, Vencent Chang, George Liu
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Patent number: 8119533Abstract: Provided is a semiconductor device. The device includes a substrate having a photo acid generator (PAG) layer on the substrate. The PAG layer is exposed to radiation. A photoresist layer is formed on the exposed PAG layer. The exposed PAG layer generates an acid. The acid decomposes a portion of the formed photoresist layer. In one embodiment, the PAG layer includes organic BARC. The decomposed portion of the photoresist layer may be used as a masking element.Type: GrantFiled: December 31, 2009Date of Patent: February 21, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: George Liu, Kuei Shun Chen, Vencent Chang, Shang-Wen Chang
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Publication number: 20120040278Abstract: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.Type: ApplicationFiled: October 25, 2011Publication date: February 16, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")Inventors: George Liu, Kuei Shun Chen, Chih-Yang Yeh, Te-Chih Huang, Wen-Hao Liu, Ying-Chou Cheng, Boren Luo, Tsong-Hua Ou, Yu-Po Tang, Wen-Chun Huang, Ru-Gun Liu, Shu-Chen Lu, Yu Lun Liu, Yao-Ching Ku, Tsai-Sheng Gau
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Patent number: 8084989Abstract: A battery charger includes a rechargeable battery for providing electric power to an external rechargeable battery through a damper unit so as to charge the external rechargeable battery, and a control unit coupled to a charging socket and the rechargeable battery and operable to charge the rechargeable battery through a charging signal received by the charging socket. An alarm unit is coupled to the rechargeable battery and the charging socket for generating a detecting signal based on a battery voltage of the rechargeable battery, for outputting a reminder output upon detecting that a potential of the detecting signal is less than that of a reference signal, and for terminating the reminder output when the charging socket receives the charging signal.Type: GrantFiled: May 20, 2009Date of Patent: December 27, 2011Assignee: Juye LII International Co., Ltd.Inventor: George Liu
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Publication number: 20110241119Abstract: The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a substrate having a device region and an alignment region; a first shallow trench isolation (STI) feature in the alignment region and having a first depth D1; a second STI feature in the device region and having a second depth D2; an alignment mark with patterned features overlying the first STI in the alignment region; and a gate stack formed on an active region in the device region.Type: ApplicationFiled: July 13, 2010Publication date: October 6, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kuei Shun Chen, Meng-Wei Chen, George Liu, Jiann Yuan Huang, Chia-Ching Lin
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Publication number: 20110217630Abstract: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.Type: ApplicationFiled: March 11, 2011Publication date: September 8, 2011Applicant: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")Inventors: George Liu, Kuei Shun Chen, Chih-Yang Yeh, Te-Chih Huang, Wen-Hao Liu, Ying-Chou Cheng, Boren Luo, Tsong-Hua Ou, Yu-Po Tang, Wen-Chun Huang, Ru-Gun Liu, Shu-Chen Lu, Yu Lun Liu, Yao-Ching Ku, Tsai-Sheng Gau
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Patent number: 8003303Abstract: A gradated photomask is provided. The photomask includes a first region including a first plurality of sub-resolution features and a second region including a second plurality of sub-resolution features. The first region blocks a first percentage of the incident radiation. The second region blocks a second percentage of the incident radiation. The first and second percentage are different. An intensity selective exposure method is also provided.Type: GrantFiled: April 9, 2009Date of Patent: August 23, 2011Assignee: Taiwan Semiconductor Manufacturing Company, LtdInventors: George Liu, Kuei Shun Chen, Chih-Yang Yeh, Te-Chih Huang
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Publication number: 20110042750Abstract: Methods of forming a semiconductor structure and the semiconductor structure are disclosed. In one embodiment, a method includes forming a gate dielectric layer over a substrate, forming a gate electrode layer over the gate dielectric layer, and etching the gate electrode layer and the gate dielectric layer to form a horizontal gate structure and a vertical gate structure, wherein the horizontal gate structure and the vertical gate structure are connected by an interconnection portion. The method further includes forming a photoresist covering the horizontal gate structure and the vertical gate structure, with the photoresist having a gap exposing the interconnection portion between the horizontal gate structure and the vertical gate structure, and then etching the interconnection portion.Type: ApplicationFiled: October 4, 2010Publication date: February 24, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Harry-Hak-Lay Chuang, Bao-Ru Young, Kuei Shun Chen, Cheng Cheng Kuo, George Liu, Tsung-Chieh Tsai, Yuhi-Jier Mii
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Publication number: 20110006232Abstract: A low voltage drop unidirectional electronic valve constituted of: a first terminal; a second terminal; a first electronically controlled switch coupled between the first terminal and the second terminal; and a first charge pump arranged to close the first electronically controlled switch when the voltage potential at the first terminal is greater than the voltage potential at the second terminal by a first value. The first charge pump is arranged in a closed loop with the first electronically controlled switch so as to continuously maintain the voltage potential at the first terminal greater than the voltage potential at the second terminal by the first value.Type: ApplicationFiled: June 15, 2010Publication date: January 13, 2011Applicant: MICROSEMI CORPORATIONInventors: Shawn Anthony FAHRENBRUCH, George LIU
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Patent number: 7838205Abstract: Photolithography processing methods by which a photoresist layer is deposited, a portion of the photoresist layer is exposed to electromagnetic radiation to transfer a reticle pattern thereto, and the exposed portion of the photoresist layer is treated with thermal energy while being subjected to an electric field, wherein the electric field is configured to substantially limit diffusion of the exposed photoresist layer portion to anisotropic diffusion.Type: GrantFiled: July 7, 2006Date of Patent: November 23, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Vincent Chang, Kuei Shun Chen, George Liu, Norman Chen
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Patent number: 7818926Abstract: A doorjamb end cap and method of installation therefor, wherein application of the present invention to wooden doorjambs permits the enclosed or encased portion thereof to effectively resist or avoid the onset of rot therein, and wherein the present invention is effectuated without expensive extrusion processes and/or thermoplastic melt and adhesive applications.Type: GrantFiled: July 24, 2006Date of Patent: October 26, 2010Assignee: Evermark, LLCInventor: George Liu
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Publication number: 20100261118Abstract: A gradated photomask is provided. The photomask includes a first region including a first plurality of sub-resolution features and a second region including a second plurality of sub-resolution features. The first region blocks a first percentage of the incident radiation. The second region blocks a second percentage of the incident radiation. The first and second percentage are different. An intensity selective exposure method is also provided.Type: ApplicationFiled: April 9, 2009Publication date: October 14, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: George Liu, Kuei Shun Chen, Chih-Yang Yeh, Te-Chih Huang
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Publication number: 20100109054Abstract: Provided is a semiconductor device. The device includes a substrate having a photo acid generator (PAG) layer on the substrate. The PAG layer is exposed to radiation. A photoresist layer is formed on the exposed PAG layer. The exposed PAG layer generates an acid. The acid decomposes a portion of the formed photoresist layer. In one embodiment, the PAG layer includes organic BARC. The decomposed portion of the photoresist layer may be used as a masking element.Type: ApplicationFiled: December 31, 2009Publication date: May 6, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: George Liu, Kuei Shun Chen, Vencent Chang, Shang-Wen Chang
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Publication number: 20100052610Abstract: A battery charger includes a rechargeable battery for providing electric power to an external rechargeable battery through a damper unit so as to charge the external rechargeable battery, and a control unit coupled to a charging socket and the rechargeable battery and operable to charge the rechargeable battery through a charging signal received by the charging socket. An alarm unit is coupled to the rechargeable battery and the charging socket for generating a detecting signal based on a battery voltage of the rechargeable battery, for outputting a reminder output upon detecting that a potential of the detecting signal is less than that of a reference signal, and for terminating the reminder output when the charging socket receives the charging signal.Type: ApplicationFiled: May 20, 2009Publication date: March 4, 2010Applicant: JUYE LII INTERNATIONAL CO., LTD.Inventor: George Liu