Abstract: A power amplifier system is disclosed having a first amplifier with a high-power input and a high-power output. A second amplifier has a low-power input and a low-power output. A reconfigurable mode switch network has a first series switch branch coupled between the high-power output and an RF output, a first shunt branch is coupled between the RF output and a fixed voltage node, and a second series switch branch is coupled between the low-power output and a shared node of the first shunt branch. The shared node separates the first shunt branch into a first shared section that is between the RF output and the shared node and a second shared section that is between the shared node and the fixed voltage node.

Abstract: A protection circuit for an acoustic filter and/or a power amplifier is disclosed. In one aspect, the protection circuit includes a bidirectional coupler that helps secure a measurement of power at an antenna. The power measurement is compared to a threshold by a detector, and if the power measurement is above the threshold, a signal is sent that causes debiasing of a power amplifier stage, which reduces power levels of signals being amplified by the power amplifier stage and correspondingly lowers the power level going through a filter associated with the power amplifier stage. By lowering the power level going through the power amplifier stage and the filter, both elements are protected against over power conditions allowing functionality to be maintained.

Abstract: A driving amplifier with low output impedance is disclosed. In one aspect, a driving amplifier stage that does not need an inter-stage impedance matching network between the driving amplifier stage and an output amplifier stage in a transmission chain may be achieved by providing stacking transconductance devices within the driving amplifier stage and reusing a supply current to provide an intermediate signal with high current but moderated voltage swing to drive the output amplifier stage, in specifically contemplated aspects, the stacked transconductance devices may be complementary metal oxide semiconductor (CMOS) field effect transistors (FETs).

Abstract: A power amplifier with feedback ballast resistance is disclosed. In one aspect, a power amplifier cell may receive a bias signal from a bias circuit where the bias circuit includes a feedback loop having an impedance that, from the perspective of the bias signal is relatively low impedance, but from a ballast thermal control perspective provides sufficient resistance to avoid thermal runaway. In exemplary aspects, this feedback loop may be extended to operate with multiple power amplifier cells and provide differential mode thermal control optimized for individual cell bias signal control and common mode thermal control optimized for thermal control of the collective power amplifier cells of the power amplifier.

Abstract: A power amplifier using multi-path common-mode feedback loops for radio frequency linearization is disclosed. In one aspect, a complementary metal oxide semiconductor (CMOS) power amplifier containing cascoded n-type field effect transistors (NFETs) and cascoded p-type FETs (PFETs) may have a common-mode feedback network and provides bias voltages that are dynamically varying with the signal power to keep the output common-mode fixed around a half-supply level, while the small-signal and large-signal transconductances of the FET's are kept balanced. A further feedback network may be associated with the supply voltage to assist in providing a symmetrical supply signal. The symmetrical supply signal allows for supply variations without introducing distortion for the power amplifier stage.

Abstract: Doherty radio frequency (RF) amplifier circuitry includes an input node, an output node, a main amplifier path, and a peaking amplifier path. The main amplifier path is coupled between the input node and the output node and includes a main amplifier. The peaking amplifier path is coupled in parallel with the main amplifier path between the input node and the output node, and includes a peaking amplifier and a peaking variable gain preamplifier between the input node and the peaking amplifier. The peaking variable gain preamplifier is configured to adjust a current provided to the peaking amplifier.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: A power amplifier system having a power amplifier stage with dynamic bias circuitry is disclosed. Also included is bias control circuitry having a compression sensor having a sensor input coupled to a RF signal output and a sensor output, wherein the compression sensor is configured to generate a gain deviation signal in response to a sensed deviation from a flat gain profile of the power amplifier stage. Further included is a bias driver that is configured to drive dynamic bias circuitry to adjust bias to the power amplifier stage to maintain the flat gain profile in response to the gain deviation signal.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: A multi-band radio frequency (RF) front-end circuit is provided. The multi-band RF front-circuit includes multiple RF circuits configured to amplify RF signals received and/or to be transmitted in multiple RF bands and/or polarizations via an antenna circuit. The antenna circuit includes multiple antenna tap points each coupled to a respective one of the RF circuits. Since each of the RF circuits has a respective impedance that can vary based on the RF bands, the antenna tap points are so positioned on the antenna circuit to each present a respective drive impedance that matches the respective impedance of a coupled RF circuit. Further, the antenna tap points are also positioned on the antenna circuit to cause desired RF isolations between the RF bands and/or the polarizations. Consequently, the multi-band RF front-end circuit can achieve optimal RF performance across a wide range of RF bands with reduced footprint and insertion losses.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: A power amplifier includes an over-current protection loop and/or an over-voltage protection loop to assist in preventing operation outside a safe operation zone. In a further exemplary aspect, triggering of the over-current protection loop adjusts a threshold voltage for the over-voltage protection loop. In further exemplary aspects, the over-current protection loop may adjust not only a bias regulator, but also provide an auxiliary control signal that further limits signals reaching the power amplifier. In still further exemplary aspects, the over-voltage protection loop may operate independently of the over-current protection current loop or the over-voltage protection loop contribute to an over-current protection signal.

Abstract: A power amplifier includes an over-current protection loop and/or an over-voltage protection loop to assist in preventing operation outside a safe operation zone. In a further exemplary aspect, triggering of the over-current protection loop adjusts a threshold voltage for the over-voltage protection loop. In further exemplary aspects, the over-current protection loop may adjust not only a bias regulator, but also provide an auxiliary control signal that further limits signals reaching the power amplifier. In still further exemplary aspects, the over-voltage protection loop may operate independently of the over-current protection current loop or the over-voltage protection loop contribute to an over-current protection signal.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: A power amplifier system is disclosed that includes a power amplifier having a first signal input, a first signal output, second signal input, and a second signal output. The power amplifier system further includes cross-coupled bias circuitry having a first transistor with a first collector coupled to the first signal input, a first base coupled to the second signal input, and a first emitter coupled to a fixed voltage node, a second transistor with a second collector coupled to the second signal input, a second base coupled to the first signal input, and a second emitter coupled to the fixed voltage node.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe laid over a three-dimensional (3D) volume. Since the shape of the conductive path corresponds to the 2D lobe laid over a 3D volume, the magnetic field generated by the inductor has magnetic field lines that are predominately destructive outside the inductor and magnetic field lines that are predominately constructive inside the inductor. In this manner, the inductor can maintain a high quality (Q) factor while being placed close to other components.