Abstract: This disclosure relates generally to substrates having three dimensional (3D) inductors and methods of manufacturing the same. In one embodiment, the 3D inductor is a solenoid inductor where the exterior edge contour of the winding ends is substantially the same and substantially aligned with the exterior edge contour of the exterior edge contour of conductive vias that connect the windings. In this manner, there is no overhang between the windings and the conductive vias. In another embodiment of the 3D inductor, via columns connect connector plates. The via column attachment surfaces of each of the conductive vias in each of the columns is the same and substantially aligned. In this manner, carrier pads are not needed and there is no overhand between the conductive vias.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: A device having device function circuitry configured to receive a device signal and output a modified device signal is disclosed. The device includes a device temperature sensor configured to generate a device temperature signal that is proportional to a temperature of the device function circuitry. The device function circuitry is further configured to maintain power dissipation of the device function circuitry to below a predetermined safe power dissipation level in response to a control signal that is generated based upon the device temperature signal.

Abstract: Radio frequency (RF) filters configured to filter undesired signal components (e.g., noise and harmonics) from RF signals are disclosed. In one embodiment, an RF filter includes a first inductor coil having a first winding and a second inductor coil having a second winding and a third winding. The second winding of the second inductor coil is configured to have a first mutual magnetic coupling with the first winding, while the third winding of the second inductor coil is configured to have a second mutual magnetic coupling with the first winding. The second winding is connected to the third winding such that the first mutual magnetic coupling and the second mutual magnetic coupling are in opposition. In this manner, the first inductor coil and the second inductor coil may be provided in a compact arrangement while providing weak mutual magnetic coupling between the first inductor coil and the second inductor coil.

Abstract: Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe laid over a three-dimensional (3D) volume. Since the shape of the conductive path corresponds to the 2D lobe laid over a 3D volume, the magnetic field generated by the inductor has magnetic field lines that are predominately destructive outside the inductor and magnetic field lines that are predominately constructive inside the inductor. In this manner, the inductor can maintain a high quality (Q) factor while being placed close to other components.

Abstract: A device having device function circuitry configured to receive a device signal and output a modified device signal is disclosed. The device includes a device temperature sensor configured to generate a device temperature signal that is proportional to a temperature of the device function circuitry. The device function circuitry is further configured to maintain power dissipation of the device function circuitry to below a predetermined safe power dissipation level in response to a control signal that is generated based upon the device temperature signal.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: The present disclosure relates to a bulk complementary-metal-oxide-semiconductor (CMOS) device including a device substrate, a thinned device die with a device region over the device substrate, a first mold compound, and a second mold compound. The device region includes a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion. The first mold compound resides over the device substrate, surrounds the thinned device die, and extends vertically beyond the thinned device die to define an opening over the thinned device die and within the first mold compound. The second mold compound fills the opening and directly connects the thinned device die. Herein, a silicon material with a resistivity between 5 Ohm-cm and 30000 Ohm-cm does not exist between the second mold compound and the thinned device die.

Abstract: A Doherty amplifier is disclosed with a main amplifier having a main input in communication with a radio frequency (RF) signal input and a main output in communication with a RF signal output. Also included is a peaking amplifier having a peak input in communication with the RF signal input and a peak output in communication with the RF signal input. Further included is main neutralization circuitry having a main neutralization input in communication with the peak input and a main neutralization output in communication with the main input, wherein the main neutralization circuitry is configured to inject a main neutralization signal into the main input such that the main neutralization signal is 180°±10% out of phase and equal in amplitude to within ±10% of a main parasitic feedback signal passed from the main output to the main input by way of a main parasitic feedback capacitance.

Abstract: A three-dimensional (3-D) inductor is incorporated in a substrate. The 3-D inductor has a first connector plate, a second connector plate, a third connector plate, a first terminal plate, and a second terminal plate. Four multi-via walls connect the various plates, wherein each multi-via wall includes a first group of at least three individual via columns, each of which connects two plates together.

Abstract: Doherty radio frequency (RF) amplifier circuitry includes an input node, an output node, a main amplifier path, and a peaking amplifier path. The main amplifier path is coupled between the input node and the output node and includes a main amplifier. The peaking amplifier path is coupled in parallel with the main amplifier path between the input node and the output node, and includes a peaking amplifier and a peaking variable gain preamplifier between the input node and the peaking amplifier. The peaking variable gain preamplifier is configured to adjust a current provided to the peaking amplifier.

Abstract: A device having device function circuitry configured to receive a device signal and output a modified device signal is disclosed. The device includes a device temperature sensor configured to generate a device temperature signal that is proportional to a temperature of the device function circuitry. The device function circuitry is further configured to maintain power dissipation of the device function circuitry to below a predetermined safe power dissipation level in response to a control signal that is generated based upon the device temperature signal.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: This disclosure relates generally to substrates having three dimensional (3D) inductors and methods of manufacturing the same. In one embodiment, the 3D inductor is a solenoid inductor where the exterior edge contour of the winding ends is substantially the same and substantially aligned with the exterior edge contour of the exterior edge contour of conductive vias that connect the windings. In this manner, there is no overhang between the windings and the conductive vias. In another embodiment of the 3D inductor, via columns connect connector plates. The via column attachment surfaces of each of the conductive vias in each of the columns is the same and substantially aligned. In this manner, carrier pads are not needed and there is no overhand between the conductive vias.

Abstract: The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

Abstract: Inductor trimming using sacrificial magnetically coupled loops is provided. Embodiments disclosed herein realize a trimmable inductor by using one or more magnetic sacrificial loops that are galvanically isolated from an adjacent primary loop of an inductor structure and which can be disabled by interrupting conduction in the sacrificial loop. When the magnetic sacrificial loop is closed, it magnetically couples to the primary loop and impacts an overall structure inductance. When conduction through the sacrificial loop is interrupted, there is no more magnetic coupling to the primary loop and there is no inductance impact from that particular sacrificial loop. The trimmable inductor can be permanently or temporarily trimmed. For example, conduction through the one or more sacrificial loops can be interrupted by removing a portion or the entire sacrificial loop (e.g., using a laser cut process). In other examples, conduction can be interrupted by a switching element, such as a transistor.

Abstract: A multi-radio access technology (RAT) antenna assembly and related front-end package is provided. In one aspect, the multi-RAT antenna assembly includes a radiating structure that radiates/absorbs a first electromagnetic wave corresponding to a first RAT in a first RF spectrum (e.g., below 6 GHz). A number of slot openings are created in the radiating structure to function as a number of slot antennas for radiating/absorbing a second electromagnetic wave corresponding to a second RAT in a second RF spectrum (e.g., above 18 GHz). As such, the multi-RAT antenna assembly can support both the first RAT and the second RAT based on the radiating structure, thus helping to reduce real estate requirements of the multi-RAT antenna assembly. In another aspect, a front-end circuit supporting the second RAT is coupled to the slot openings via shortest possible paths in a front-end package, thus helping to reduce propagation attenuation in the front-end package.

Abstract: The present disclosure relates to a microelectronics package with vertically stacked flip-chip dies, and a process for making the same. The disclosed microelectronics package includes a module board, a first thinned flip-chip die with a through-die via, a second flip-chip die with a package contact at the bottom, and a mold compound. Herein, a top portion of the through-die via is exposed at top of the first thinned flip-chip die. The first thinned flip-chip die and the mold compound reside over the module substrate. The mold compound surrounds the first thinned flip-chip die and extends above the first thinned flip-chip die to define an opening. The second flip-chip die, which has a smaller plane size than the first thinned flip-chip die, resides within the opening and is stacked with the first thinned flip-chip die by coupling the package contact to the exposed top portion of the through-die via.

Abstract: The present disclosure relates to a bulk complementary-metal-oxide-semiconductor (CMOS) device including a device substrate, a thinned device die with a device region over the device substrate, a first mold compound, and a second mold compound. The device region includes a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion. The first mold compound resides over the device substrate, surrounds the thinned device die, and extends vertically beyond the thinned device die to define an opening over the thinned device die and within the first mold compound. The second mold compound fills the opening and directly connects the thinned device die. Herein, a silicon material with a resistivity between 5 Ohm-cm and 30000 Ohm-cm does not exist between the second mold compound and the thinned device die.