Abstract: In one embodiment a memory controller is provided. The memory controller comprises a predictive logic circuit to predict an increase in a current operating temperature of a memory device coupled to the memory controller, based on memory cycles to be issued to the memory device; and a temperature control circuit to perform a temperature control operation wherein if the sum of the current operating temperature and the predicted increase in temperature is greater than a threshold temperature associated with the memory device, then the number of memory cycles issued to the memory device is reduced.

Abstract: A method is described that entails reading information from a non volatile storage or memory resource. The information is a threshold or information from which a threshold can be calculated. The information is particularly tailored for an operating environment that a system memory is recognized as being subjected to. The method also entails causing a memory controller to employ the threshold so as to control a rate at which the memory performs activities.

Abstract: A method and apparatus for the thermal sensing and regulating of a RAM device using temperature sensing circuitry, embedded directly in the device, is presented. A predetermined voltage is passed through a temperature sensitive diode to create an analog signal. The analog signal is converted into digital temperature data by a A/D converter. The digital temperature data is then transmitted to a controlling host, without interfering with the normal operation of the device, by either transmitting the data in an out-of-band signal or during the clock refresh cycle. The controlling host, upon receipt of the temperature data, checks to see if the temperature level of the device has exceeded a threshold value.