Abstract: A method of controlling dispensing of a liquid can include detecting a predetermined shape of a surface of a liquid in a container by reflecting optical radiation from the surface to control a volume of the liquid dispensed into the container. Related apparatus and computer program products are also disclosed.

Abstract: Backlighting systems for color display screens include clusters of LED devices of different colors that are configured to radiate the different colors in a light path that impinges on the color display screen, to provide backlighting on the color display screen. LED device controllers are provided, a respective one of which is configured to control operating parameters of a subset of the clusters of LED devices, a single cluster of LED devices and/or individual LED devices in the individual clusters. The LED device controllers may use a common data line.

Abstract: A light-emitting device includes a substrate that is at least partially transparent to optical radiation and has a first index of refraction. A diode region is disposed on a first surface of the substrate and is configured to emit light responsive to a voltage applied thereto. An encapsulation layer is disposed on a second surface of the substrate and has a second index of refraction. An antireflective layer is disposed between a second surface of the substrate and the encapsulation layer. The antireflective layer has a graded index of refraction having values in a range between about the first index of refraction at a first surface of the antireflective layer and about the second index of refraction at a second surface of the antireflective layer. The encapsulation layer may also be omitted and the antireflective layer may separate the substrate, which has a first index of refraction, from air, which has a second index of refraction. Non “flip-chip” embodiments are also disclosed.

Abstract: Semiconductor light emitting circuits include semiconductor light emitting diodes that are serially connected between a pair of input terminals. Four layer semiconductor devices, such as Shockley diodes and/or thyristors are also provided, a respective one of which is connected across a respective one of the semiconductor light emitting diodes. The four layer semiconductor devices can allow a string of light emitting diodes to continue to be lit if one light emitting diode fails.

Abstract: A display screen includes at least two arrays of at least two different color picture elements. A backlighting system for the display includes at least two arrays of Light Emitting Diode (LED) devices that are configured to radiate light of at least two colors in a light path that impinges on the display screen, to provide backlighting on the display screen. A synchronizer is configured to synchronously activate and deactivate at least a first one of the arrays of LED devices and at least a first one of the arrays of color picture elements. Different arrays of synchronously activated and deactivated LED devices and color picture elements also may be alternatingly synchronously activated and deactivated. The backlighting also may be pulsed.

Abstract: Backlight systems for display screens include multiple arrays of multiple different color picture elements and multiple arrays of LED devices that are configured to radiate light of multiple colors in a light path that impinges on the display screen, to provide backlighting on the display screen. More arrays of different color LED devices than arrays of different color picture elements are provided. For example, red, green and blue color picture elements may be provided, whereas red, green, blue and cyanine and/or amber backlighting LED devices may be provided.

Abstract: A mounting substrate for a semiconductor light emitting device includes a thermally conductive mounting block. The mounting block has, in a first face thereof, a cavity that is configured to mount a semiconductor light emitting device therein and to reflect light that is emitted by the semiconductor light emitting device that is mounted therein away from the cavity. A conductive lead inserted into the mounting block extends into the cavity. The conductive lead is electrically isolated from the mounting block and has an exposed contact portion in the cavity. The conductive lead may be a plurality of conductive leads each having an exposed contact portion at different locations in the cavity. Related packaging methods also may be provided.

Abstract: A display panel for a flat panel display includes an array of LCD devices and an array of LED devices that are configured to radiate light in a light path that impinges on the array of LCD devices, to provide backlighting on the array of LCD devices. A solid colloidal dispersion of particles of a first material having a first index of refraction dispersed in a second material having a second index of refraction, such as a solid foam structure, is provided in the light path to reduce spatial non-uniformity of the backlighting.

Abstract: A display panel for a flat panel display includes a planar array of LCD devices and a planar array of LED devices that is closely spaced apart from the planar array of LCD devices, at least some of the LED devices being disposed within a periphery of the array of LCD devices such that, in operation, the planar array of LED devices provides backlighting for the planar array of LCD devices. The planar array of LED devices can include at least one solid metal block having first and second opposing metal faces. The first metal face includes therein an array of reflector cavities, and the second metal face includes therein heat sink fins that are exposed at the back face of the flat panel display.

Abstract: A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces. The first metal face includes a cavity that is configured to mount at least one semiconductor light emitting device therein, and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity. One or more semiconductor light emitting devices are mounted in the cavity. A cap having an aperture is configured to matingly attach to the solid metal block adjacent the first metal face such that the aperture is aligned to the cavity. Reflective coatings, conductive traces, insulating layers, pedestals, through holes, lenses, flexible films, optical elements, phosphor, integrated circuits, optical coupling media, recesses and/or meniscus control regions also may be provided in the package. Related packaging methods also may be provided.

Abstract: A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

Abstract: A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces. The first metal face includes a cavity that is configured to mount at least one semiconductor light emitting device therein, and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity. The second metal face includes heat sink fins therein. One or more semiconductor light emitting devices are mounted in the cavity. Reflective coatings, conductive traces, insulating layers, pedestals, through holes, lenses, flexible films, optical elements, phosphor, integrated circuits and/or optical coupling media also may be provided in the package. Related packaging methods also may be provided.

Abstract: Semiconductor light emitting devices are fabricated by placing a suspension including phosphor particles suspended in solvent on at least a portion of a light emitting surface of a semiconductor light emitting element, and evaporating at least some of the solvent to cause the phosphor particles to deposit on at least a portion of the light emitting surface. A coating including phosphor particles is thereby formed on at least a portion of the light emitting surface. Particles other than phosphor also may be coated and solutions wherein particles are dissolved in solvent also may be used.

Abstract: Semiconductor light emitting devices include a semiconductor light emitting element having a light emitting surface, and a patternable film including transparent silicone and phosphor on at least a portion of the light emitting surface. The patternable film may be a photopatternable film and/or a printable film including transparent silicone and phosphor. The patternable film includes an aperture therein that exposes a portion of a light emitting surface, and a bond pad is provided on the light emitting surface in the aperture. A wire bond may be provided on the bond pad. Related methods of fabricating semiconductor light emitting devices are also provided.

Abstract: Optical elements for semiconductor light emitting devices include a body that is configured to attach to a semiconductor light emitting device. The body includes an integral lens. A mirror is provided in and/or on the body. The body, the lens and the mirror are positioned such that, in operation, light that is emitted from the semiconductor light emitting device enters the body, is reflected from the mirror and passes through the lens to emerge from the body.

Abstract: A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

Abstract: A composite optical lens is disclosed. The composite optical lens includes a concave bottom surface adapted to receive light, reflective surface adapted to reflect the received light, and optical surface through which the reflected light leaves the optical lens. The concave bottom surface defines a concave cavity allowing placement of at least a portion of a light emitting device within the concave cavity. The concave bottom surface, the optical surface, or both may have predetermined optical finish to operate on the light such as diffusing or focusing the light. The reflective surface can be coated, designed, or both for total internal reflection effect.

Abstract: A light emitting die package and a method of manufacturing the die package are disclosed. The die package includes a leadframe, at least one light emitting device (LED), a molded body, and a lens. The leadframe includes a plurality of leads and has a top side and a bottom side. A portion of the leadframe defines a mounting pad. The LED device is mounted on the mounting pad. The molded body is integrated with portions of the leadframe and defines an opening on the top side of the leadframe, the opening surrounding the mounting pad. The molded body further includes latches on the bottom side of the leadframe. The lens is coupled to the molded body. A composite lens is used as both reflector and imaging tool to collect and direct light emitted by LED(s) for desired spectral and luminous performance.

Abstract: A vapor transport growth process for bulk growth of high quality gallium nitride for semiconductor applications is disclosed. The method includes the steps of heating a gallium nitride source material, a substrate suitable for epitaxial growth of GaN thereon, ammonia, a transporting agent that will react with GaN to form gallium-containing compositions, and a carrier gas to a temperature sufficient for the transporting agent to form volatile Ga-containing compositions from the gallium nitride source material. The method is characterized by maintaining the temperature of the substrate sufficiently lower than the temperature of the source material to encourage the volatile gallium-containing compositions to preferentially form GaN on the substrate.

Abstract: A light-emitting device includes an active region that is configured to emit light responsive to a voltage applied thereto. A first encapsulation layer at least partially encapsulates the active region and includes a matrix material and nanoparticles, which modify at least one physical property of the first encapsulation layer. A second encapsulation layer at least partially encapsulates the first encapsulation layer.