Abstract: Methods of packaging a semiconductor light emitting device in a reflector having a moat positioned between a lower and an upper sidewall thereof, the upper and lower sidewall defining a reflective cavity, include dispensing encapsulant material into the reflective cavity including the light emitting device therein to cover the light emitting device and to form a convex meniscus of encapsulant material in the reflective cavity extending from an edge of the moat without contacting the upper sidewall of the reflector. The encapsulant material in the reflective cavity is cured. Packaged semiconductor light emitting devices and reflectors for the same are also provided.

Abstract: Methods of packaging a semiconductor light emitting device positioned in a reflective cavity are provided. A first quantity of encapsulant material is dispensed into the reflective cavity including the light emitting device therein and the first quantity of encapsulant in the reflective cavity is cured. A second quantity of encapsulant material is dispensed onto the cured first quantity of encapsulant material. A lens is positioned in the reflective cavity on the dispensed second quantity of encapsulant material. The dispensed second quantity of encapsulant material is cured to attach the lens in the reflective cavity.

Abstract: Semiconductor light emitting devices include a substrate having a face, a flexible film that includes therein an optical element, on the face, and a semiconductor light emitting element between the substrate and the flexible film and configured to emit light through the optical element. The face can include a cavity therein, and the semiconductor light emitting element may be in the cavity. The flexible film extends onto the face beyond the cavity, and the optical element overlies the cavity.

Abstract: An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal source composition on the first SiO2layer, and a second SiO2 layer on the Group II metal source composition layer.

Abstract: Fabrication of a light emitting device includes etching of a substrate of the light emitting device. The etch may be an aqueous etch sufficient to increase an amount of light extracted through the substrate. The etch may be a direct aqueous etch of a silicon carbide substrate. The etch may remove damage from the substrate that results from other processing of the substrate, such as damage from sawing the substrate. The etch may remove an amorphous region of silicon carbide in the substrate.

Abstract: A method for forming semiconductor devices using a semiconductor substrate having first and second opposed surfaces and including first and second device regions includes directing a beam of laser light at the substrate such that the beam of laser light is focused within the substrate between the first and second surfaces thereof and the beam of laser light forms a thermally weakened zone (TWZ) in the substrate. The TWZ extends between the first and second device regions and defines a break line.

Abstract: A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.

Abstract: A semiconductor structure is disclosed that enhances quality control inspection of device. The structure includes a substrate having at least one planar face, a first metal layer on the planar face, and covering some, but not all of the planar face in a first predetermined geometric pattern, and a second metal layer on the planar face, and covering some, but not all of the planar face in a second geometric pattern that is different from the first geometric pattern. A quality control method for manufacturing a semiconductor device is also disclosed. The method includes the steps of placing a first metal layer on a semiconductor face of a device in a first predetermined geometric pattern, placing a second metal layer on the same face of the device as the first layer and in a second predetermined geometric pattern that is different from the first geometric pattern, and then inspecting the device to identify the presence or absence of one or both of the patterns on the face.

Abstract: A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.

Abstract: A transmissive optical element is fabricated by filling a mold with molten liquid that includes a transparent plastic and a phosphor additive, and allowing the molten liquid to solidify to produce the transmissive optical element having phosphor dispersed therein. Accordingly, a separate phosphor coating or phosphor-containing encapsulant need not be used. Transmissive optical elements include a shell made of transparent plastic with a phosphor dispersed therein. The phosphor may be uniformly and/or nonuniformly dispersed in the shell.

Abstract: A mounting substrate for a semiconductor light emitting device includes a solid metal block having a cavity in a face thereof that is configured for mounting a semiconductor light emitting device therein. An insulating coating is provided in the cavity, and first and second spaced apart conductive traces are provided on the insulating coating in the cavity that are configured for connection to a semiconductor light emitting device. The mounting substrate may be fabricated by providing a solid aluminum block including a cavity in a face thereof that is configured for mounting a semiconductor light emitting device therein. The solid aluminum block is oxidized to form an aluminum oxide coating thereon. The first and second spaced apart electrical traces are fabricated on the aluminum oxide coating in the cavity.

Abstract: A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

Abstract: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided.