Abstract: Provided is an organic EL device having a lower power consumption and high performance and enabling to display separate pictures on bidirectional screens as well as to display the same picture on the bidirectional screens, and a driving apparatus thereof. The organic EL device includes: a first organic EL panel for a unidirectional display; and a second organic EL panel for a unidirectional display, each of the first and second organic EL panels having a substrate, a first electrode, an emitting layer and a second electrode, wherein the first organic EL panel and the second organic EL panel are coupled so as to display pictures in bidirections. According to the present invention, a sufficient brightness can be obtained even under a low power. Also, since an opaque cathode is used, performance and transmittance are enhanced compared with the related art organic EL device using a transparent cathode.

Abstract: An organic electroluminescence (EL) device capable of digital driving, and a method for manufacturing the same are disclosed herein. The organic EL device comprises a substrate, an anode formed on the substrate, an organic EL layer formed on the anode and constructed as a multilayer structure including a hole injection layer and a hole transport layer, a cathode formed on the organic EL layer, and an interface deterioration preventing layer formed between the anode and the organic EL layer.

Abstract: An organic EL device is disclosed, which has an organic multilayer between a first electrode and a second electrode, the organic multilayer comprising a hole injection layer formed on the first electrode, and formed of a mixture of at least one selected from organic materials and at least one selected from inorganic materials; a hole transport layer having at least one layer on the hole injection layer; and an emitting layer formed on the hole transport layer.

Abstract: An organic EL device is disclosed, which has an organic multilayer between a first electrode and a second electrode, the organic multilayer comprising a hole injection layer formed on the first electrode, and formed of a mixture of at least one selected from organic materials and at least one selected from inorganic materials; a hole transport layer having at least one layer on the hole injection layer; and an emitting layer formed on the hole transport layer.

Abstract: Disclosed is a two-way pre-stress system for applying pre-stress to a member of a structure by a pre-tendon method, the system comprising: a mold for forming the member, the mold having a concrete pouring space; a supporter installed outside the mold; at least one horizontal tendon installed in the mold in a horizontal direction; a horizontal tendon settling device installed at the supporter, for settling the horizontal tendon in the mold; at least one vertical tendon installed in the mold in a vertical direction; a vertical tendon settling device installed at the supporter, for settling the vertical tendons in the mold; and a bending device installed at the supporter and combined with at least one of the vertical tendon, for forming a bent portion in at least one vertical tendon in a deep portion of the member.

Abstract: A construction method for a girder in a bridge which a plurality of piers are installed in an interval in a longitudinal direction of the bridge, a plurality of copings are installed on the piers, and a plurality of girders respectively installed between the piers are installed on the copings, the method comprising the steps of: installing at least one temporary girder on a front coping of the copings and a rear coping adjacent to the rear coping of the copings; installing a crane for pulling up a girder having a girder pulling up space therein guided by the temporary girder; providing with a girder by a pre-cast method so as to install a girder on the front coping and the rear coping; providing with a vehicle for carrying a girder, the vehicle being constituted so that load of a girder to the piers carried by the vehicle is distributed to the piers through the upper surface of the girders installed in advance; introducing the vehicle carrying a first girder moving along a guide of the temporary girder to a g

Abstract: The present invention provides a light emitting display with excellent reliability by preventing degradation by heat such as color changes or luminance reduction, through uniform and quick discharge of heat generated internally.

Abstract: A light emitting device is provided. The light emitting device includes a substrate including a non-emission region and an emission region, an emission unit which is located and an emission layer interposed between the first and second electrodes, a shield cap adhered to the substrate to encapsulate the emission unit, and an inert liquid or an inert gas in a space between the substrate and the shield cap.

Abstract: An oxide pattern forming method comprises forming an oxide layer on a semiconductor substrate, implanting boron ions of not less than 1.0×1016 atoms/cm2 onto the oxide layer in a given region, and wet-etching the oxide layer in the remaining region where the boron ions are not implanted.

Abstract: An organic EL device is disclosed, which has an organic multilayer between a first electrode and a second electrode, the organic multilayer comprising a hole injection layer formed on the first electrode, and formed of a mixture of at least one selected from organic materials and at least one selected from inorganic materials; a hole transport layer having at least one layer on the hole injection layer; and an emitting layer formed on the hole transport layer.

Abstract: Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of aluminum oxide is disposed on the first dielectric layer. A third dielectric layer comprising aluminum oxide is disposed on the second dielectric layer. A capacitor upper electrode is disposed on the third dielectric layer. The capacitor of the present invention can improve electrical properties. Thus, power consumption can be reduced and capacitance per unit area is high enough to achieve high integration.

Abstract: A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.

Abstract: An organic electroluminescent device with improved long-term stability is disclosed, comprising either a dual layer of a layer I and a layer II or a mixture of the two layers between an EL multilayer and a second electrode, the layer II being made of at least one alkali metal, alkaline earth metal, or compound thereof, the layer I being formed of at least one material selected from those having chemical formula I and chemical formula II as shown below.

Abstract: In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.

Abstract: A method for manufacturing a semiconductor device having a metal silicide layer comprises forming a structure including a plurality of gate stacks formed on a semiconductor substrate, forming a gate spacer layer formed on an upper surface of the semiconductor substrate and around a sidewall of each gate stack, and forming an insulation layer between the gate stacks. The method further comprises forming a metal silicide layer on an exposed surface of the semiconductor substrate between the gate stacks.

Abstract: A device and method for driving an organic EL display is disclosed, in which the device includes a photo converter sensing an intensity of external light, and converting the sensed light to an electric signal; an A/D converter converting the electric signal of the photo converter from an analog signal to a digital signal; a comparator comparing the value of the electric signal converted to the digital signal with a preset reference value; a controller controlling at least any one of the driver and the power source according to comparison results; a driver controlling the amount of current applied to a display panel according to a control signal of the controller; and a power source controlling the intensity of voltage applied to the driver and the display panel according to the control signal of the controller.

Abstract: In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.

Abstract: A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.

Abstract: A manufacturing method of a hybrid-carrier includes injection-molding the hybrid-carrier, solidifying the injection-molded hybrid-carrier by cooling it down, making holes in the solidified hybrid-carrier to attach other parts to the hybrid-carrier, and mounting nuts on the hybrid-carrier in which the holes are made. The hybrid-carrier is manufactured by the above method in that holes are made in and nuts are mounted on the hybrid-carrier whose deformation is already complete even if the hybrid-carrier undergoes deformation during the process of solidification after being injection molded, thereby minimizing the errors and corrections when mounting other parts to the hybrid-carrier.

Abstract: Disclosed is a method for forming a capacitor of a semiconductor device. An etch stop layer, first oxide layer and second oxide layer are sequentially deposited on an insulating interlayer of a substrate. Contact holes through which portions of the etch stop layer are exposed above plugs of the insulating interlayer are formed. The contact holes are cleaned by a cleaning solution having an etching selectivity which is higher for the first oxide layer than for the second oxide layer, thereby enlarging lower portions of the contact holes. A spacer nitride layer is formed on surfaces of the contact holes and the second oxide layer. Portions of the spacer nitride layers located on the second oxide layer and above the plugs together with portions of the etch stop layer located on the plugs are removed. A double polysilicon layer is formed on the spacer nitride layer segments.