Abstract: Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of aluminum oxide is disposed on the first dielectric layer. A third dielectric layer comprising aluminum oxide is disposed on the second dielectric layer. A capacitor upper electrode is disposed on the third dielectric layer. The capacitor of the present invention can improve electrical properties. Thus, power consumption can be reduced and capacitance per unit area is high enough to achieve high integration.

Abstract: A device and method for driving an organic EL display is disclosed, in which the device includes a photo converter sensing an intensity of external light, and converting the sensed light to an electric signal; an A/D converter converting the electric signal of the photo converter from an analog signal to a digital signal; a comparator comparing the value of the electric signal converted to the digital signal with a preset reference value; a controller controlling at least any one of the driver and the power source according to comparison results; a driver controlling the amount of current applied to a display panel according to a control signal of the controller; and a power source controlling the intensity of voltage applied to the driver and the display panel according to the control signal of the controller.

Abstract: Disclosed is a method for fabricating a semiconductor device with a dual gate dielectric structure. The method includes the steps of: sequentially forming a first oxide layer, a nitride layer and a second oxide layer on a substrate provided with a cell region for the NVDRAM and a peripheral circuit region for a logic circuit; forming a mask on the cell region; performing a first wet etching process by using the mask as an etch barrier to remove the second oxide layer formed in the peripheral circuit region; performing a second wet etching process by using the second oxide layer remaining in the cell region as an etch barrier to remove the nitride layer formed in the peripheral circuit region; forming a third oxide layer on the first oxide layer remaining in the peripheral circuit region; and forming a gate electrode on the second oxide layer and the third oxide layer.

Abstract: An organic electroluminescent module is disclosed. The organic electroluminescent module comprises a plurality of scan lines, a plurality of data lines perpendicular to the plurality of scan lines, a plurality of light emitting diodes formed at cross regions of the plurality of scan lines and the plurality of data lines, a scan driver having inverse voltage applying transistors and ground voltage applying transistors respectively connected to the plurality of scan lines, a data driver having static current sources and ground voltage applying transistors respectively connected to the plurality of data lines, and a driver controller for controlling the scan driver and the data driver. Impurities in the organic EL module can easily be eliminated by an inverse voltage. As a result, a lifetime of the organic EL module can be prolonged and quality of display can be improved.

Abstract: Disclosed is a method for providing services on online geometric correction using, in which information related with GCP (Ground Control Point) used for correcting geometric distortion of an image collected by an aircraft or a satellite are transmitted online through Internet network, thereby allowing a user at a remote place to perform geometric correction or ortho-rectification. In the geometric correction process, the image information related with the GCP is provided but the precise geographic coordinate of the GCP itself is not provided to thereby maintain the secretion of detailed geographic information.

Abstract: Disclosed is a method for fabricating a semiconductor device with a dual gate dielectric structure. The method includes the steps of: sequentially forming a first oxide layer, a nitride layer and a second oxide layer on a substrate provided with a cell region for the NVDRAM and a peripheral circuit region for a logic circuit; forming a mask on the cell region; performing a first wet etching process by using the mask as an etch barrier to remove the second oxide layer formed in the peripheral circuit region; performing a second wet etching process by using the second oxide layer remaining in the cell region as an etch barrier to remove the nitride layer formed in the peripheral circuit region; forming a third oxide layer on the first oxide layer remaining in the peripheral circuit region; and forming a gate electrode on the second oxide layer and the third oxide layer.

Abstract: A method for manufacturing a semiconductor device wherein a cylindrical capacitor is formed by selectively etching an oxide film in a cell area for preventing bridging between cells during a wet etching process of the oxide film in the cell area is described herein. A step difference between the interlayer insulating film formed in the cell area and the interlayer insulating film formed in the peripheral circuit area is minimized by covering the peripheral circuit area by the photoresist film and selectively etching the oxide film in the cell area to form a cylindrical capacitor, thereby simplifying the manufacturing process. In addition, bridging between the cells is prevented by performing a simple wet etching process using a single wet station, without performing a separate dry etching process for removing the oxide film and the photoresist film pattern, thereby improving the yield of the device.

Abstract: Disclosed is an optical projection system having a simple structure by scrolling a light of each wavelength efficiently on a panel by preventing a color shift by adjusting a width of a color band on a color drum surface properly. The present invention includes the color drum outputting an incident light through a predetermined number of color bands on a drum plane to display wherein a light outputted from an end of a light projecting plane outputting the incident light has an incident angle equal to or smaller than 30° on the color band. Therefore, the present invention minimizes the influence of the color shift, provides an incident light in the scroll optical system effectively using the simple and inexpensive color drum, and prevents the degradation of image.

Abstract: A device and method for driving an organic EL display is disclosed, in which the device includes a photo converter sensing an intensity of external light, and converting the sensed light to an electric signal; an A/D converter converting the electric signal of the photo converter from an analog signal to a digital signal; a comparator comparing the value of the electric signal converted to the digital signal with a preset reference value; a controller controlling at least any one of the driver and the power source according to comparison results; a driver controlling the amount of current applied to a display panel according to a control signal of the controller; and a power source controlling the intensity of voltage applied to the driver and the display panel according to the control signal of the controller.

Abstract: Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of aluminum oxide is disposed on the first dielectric layer. A third dielectric layer comprising aluminum oxide is disposed on the second dielectric layer. A capacitor upper electrode is disposed on the third dielectric layer. The capacitor of the present invention can improve electrical properties. Thus, power consumption can be reduced and capacitance per unit area is high enough to achieve high integration.

Abstract: A method for manufacturing a semiconductor device wherein a cylindrical capacitor is formed by selectively etching an oxide film in a cell area for preventing bridging between cells during a wet etching process of the oxide film in the cell area is described herein. A step difference between the interlayer insulating film formed in the cell area and the interlayer insulating film formed in the peripheral circuit area is minimized by covering the peripheral circuit area by the photoresist film and selectively etching the oxide film in the cell area to form a cylindrical capacitor, thereby simplifying the manufacturing process. In addition, bridging between the cells is prevented by performing a simple wet etching process using a single wet station, without performing a separate dry etching process for removing the oxide film and the photoresist film pattern, thereby improving the yield of the device.

Abstract: A semiconductor device with a substrate, a first electrode on the substrate, at least one of an injection layer or a transporting layer on the first electrode, an adhesion layer on the at least one of an injection layer or a transporting layer, and a second electrode on the adhesion layer.

Abstract: In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.

Abstract: A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.

Abstract: An organic electroluminescent module is disclosed. The organic electroluminescent module comprises a plurality of scan lines, a plurality of data lines perpendicular to the plurality of scan lines, a plurality of light emitting diodes formed at cross regions of the plurality of scan lines and the plurality of data lines, a scan driver having inverse voltage applying transistors and ground voltage applying transistors respectively connected to the plurality of scan lines, a data driver having static current sources and ground voltage applying transistors respectively connected to the plurality of data lines, and a driver controller for controlling the scan driver and the data driver. Impurities in the organic EL module can easily be eliminated by an inverse voltage. As a result, a lifetime of the organic EL module can be prolonged and quality of display can be improved.

Abstract: An organic electroluminescent device with improved long-term stability, comprising either a dual layer of a layer I and a layer II or a mixture of the two layers between an EL multilayer and a second electrode, the layer II being made of at least one alkali metal, alkaline earth metal, or compound thereof, the layer I being formed of at least one material selected from those having chemical formula I and chemical formula II as shown below.

Abstract: Disclosed is an optical projection system having a simple structure by scrolling a light of each wavelength efficiently on a panel by preventing a color shift by adjusting a width of a color band on a color drum surface properly. The present invention includes the color drum outputting an incident light through a predetermined number of color bands on a drum plane to display wherein a light outputted from an end of a light projecting plane outputting the incident light has an incident angle equal to or smaller than 30° on the color band. Therefore, the present invention minimizes the influence of the color shift, provides an incident light in the scroll optical system effectively using the simple and inexpensive color drum, and prevents the degradation of image.

Abstract: Effective and uniform driving of a large organic EL display panel is formed using a plurality of stripes for each of first electrodes and also for each of second electrodes. These stripes are electrically isolated from each other, which enables each group of pixels defined by a set of orthogonal stripes to be driven separately from the remaining groups of pixels. Efficient fabrication methods devised to construct the display panel are cost effective and suitable for mass production.

Abstract: An organic electroluminescent device with improved long-term stability is disclosed, comprising either a dual layer of a layer I and a layer II or a mixture of the two layers between an EL multilayer and a second electrode, the layer II being made of at least one alkali metal, alkaline earth metal, or compound thereof, the layer I being formed of at least one material selected from those having chemical formula I and chemical formula II as shown below.

Abstract: An organic electroluminescent device with improved long-term stability, comprising either a dual layer of a layer I and a layer II or a mixture of the two layers between an EL multilayer and a second electrode, the layer II being made of at least one alkali metal, alkaline earth metal, or compound thereof, the layer I being formed of at least one material selected from those having chemical formula I and chemical formula II as shown below.