Abstract: In one example, an electronic device includes a substrate, an electronic component disposed over the substrate, and an encapsulant disposed over the substrate and the electronic component. A molded heat spreader can be disposed over the encapsulant and can comprise a heat spreader and a mold compound disposed around a lateral side of the heat spreader. A lateral side of the mold compound is coplanar with a lateral side of the encapsulant. Other examples and related methods are also disclosed herein.

Abstract: Provided is a duct docking device for a ventilation seat of a vehicle. The duct docking device enables air to be easily blown to a seatback and a seat cushion with a passenger in a seat using only one blower by enabling a seatback duct mounted at the seatback and a seat cushion duct mounted at the seat cushion to be hermetically docked through a connector duct, etc. at an unfolded position of the seatback in which a passenger can sit, and by enabling the seatback duct mounted at the seatback and the seat cushion duct mounted at the seat cushion to be separated from each other at a folded position of the seatback in consideration of that there is no passenger in the seat.

Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: In one example, an electronic device can comprise a first substrate, an electronic component disposed over a side of the first substrate, and a vertical interconnect coupled to the side of the first substrate. The vertical interconnect can comprise a first metallic core ball proximate the first substrate, a second metallic core ball disposed above the first metallic core ball and distal from the first substrate, and a fusible material coupling the first metallic core ball with the second metallic core ball. The fusible material can be coupled to the first substrate. A second substrate can be disposed over the electronic component and the vertical interconnect. The fusible material of the vertical interconnect can be coupled to the second substrate. Other examples and related methods are also disclosed herein.

Abstract: Disclosed are a method and an apparatus for de-identification of personal information. The method for de-identification of personal information comprises the steps of: obtaining, from a database, a raw table including records in which raw data indicating the personal information is recorded; generating generalized data by generalizing the raw data recorded in each of the records included in the raw table; setting a generalized hierarchical model consisting of the raw data and the generalized data; generating a raw lattice including a plurality of candidate nodes on the basis of the generalized hierarchical model; and setting, from among the plurality of candidate nodes included in the raw lattice, a final lattice including at least one candidate node satisfying a predetermined criterion. Thus, it is possible for the personal information to be efficiently de-identified.

Abstract: In one example, an electronic device, comprises a first substrate comprising a first conductive structure, a second substrate comprising a second conductive structure, wherein the first substrate is over the second substrate, a first electronic component between the first substrate and the second substrate, a vertical interconnect between the first substrate and the second substrate, wherein the vertical interconnect is coupled with the first conductive structure and the second conductive structure, and an encapsulant between the first substrate and the second substrate and covering the vertical interconnect. A vertical port on the first electronic component is exposed by an aperture of the first substrate. Other examples and related methods are also disclosed herein.

Abstract: Provided is a laundry delivery device that can automatically and easily deliver laundry requested for delivery to a customer without the need for a worker to separate and deliver the laundry, and thus greatly improve the work efficiency of the worker, the laundry delivery device including a conveyor transporting a hanger with laundry requested for delivery to a shipping location; and an actuator allowing the hanger with the laundry requested for delivery transferred to the shipping location by the conveyor to be separated from the conveyor.

Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: In a secure network where the network characteristics are not known, a call admission control algorithm and a preemption control algorithm based on a destination node informing the source node of the observed carried traffic are used to regulate the amount of traffic that needs to be preempted by the source. The amount of traffic that needs to be preempted is based on the carried traffic measured at the destination node. The traffic to be preempted is based on the priority of the traffic, where the lowest priority traffic is the first to be preempted until the amount of traffic preempted is sufficient to allow the remaining traffic to pass through the network without congestion.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: Disclosed is a method for producing a Heusler-based phase thermoelectric material using an amorphous phase precursor. More specifically disclosed is a method for producing a powder or bulk thermoelectric material having a microstructure including a Heusler-based phase with a thermoelectric effect by crystallization of an amorphous phase precursor prepared by a non-equilibrium processes. Also disclosed is a device using a Heusler-based phase thermoelectric material produced by the method. The method largely avoids the efficiency problems of conventional methods, including low productivity in scaling up caused by long annealing time, high annealing temperature, and contamination during nanopowder production, achieving improved process efficiency. In addition, the method enables efficient production of a thermoelectric material having a nano-sized microstructure that is difficult to produce by a conventional method.

Abstract: In one example, an electronic device, comprises a first substrate comprising a first conductive structure, a second substrate comprising a second conductive structure, wherein the first substrate is over the second substrate, a first electronic component between the first substrate and the second substrate, a vertical interconnect between the first substrate and the second substrate, wherein the vertical interconnect is coupled with the first conductive structure and the second conductive structure, and an encapsulant between the first substrate and the second substrate and covering the vertical interconnect. A vertical port on the first electronic component is exposed by an aperture of the first substrate. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: Provided is a duct docking device for a ventilation seat of a vehicle. The duct docking device enables air to be easily blown to a seatback and a seat cushion with a passenger in a seat using only one blower by enabling a seatback duct mounted at the seatback and a seat cushion duct mounted at the seat cushion to be hermetically docked through a connector duct, etc. at an unfolded position of the seatback in which a passenger can sit, and by enabling the seatback duct mounted at the seatback and the seat cushion duct mounted at the seat cushion to be separated from each other at a folded position of the seatback in consideration of that there is no passenger in the seat.

Abstract: The present disclosure relates to a method for analysis on interim result data in a de-identification procedure, an apparatus for the same, a computer program for the same, and a recording medium storing computer program thereof. A method for de-identification according to an example of the present disclosure may include: generating a first interim result data by applying a first de-identification process to an initial data; generating a first analysis metric for the first interim result data; and generating a final result data based on the first interim result data, when the first analysis metric satisfies a first de-identification criterion.

Abstract: In a secure network where the network characteristics are not known, a call admission control algorithm and a preemption control algorithm based on a destination node informing the source node of the observed carried traffic are used to regulate the amount of traffic that needs to be preempted by the source. The amount of traffic that needs to be preempted is based on the carried traffic measured at the destination node. The traffic to be preempted is based on the priority of the traffic, where the lowest priority traffic is the first to be preempted until the amount of traffic preempted is sufficient to allow the remaining traffic to pass through the network without congestion.

Abstract: In one example, a semiconductor structure comprises a redistribution structure comprising a conductive structure, a cavity substrate on a top side of the redistribution structure and having a cavity and a pillar contacting the redistribution structure, an electronic component on the top surface of the redistribution structure and in the cavity, wherein the electronic component is electrically coupled with the conductive structure, and an encapsulant in the cavity and on the top side of the redistribution structure, contacting a lateral side of the electronic component, a lateral side of the cavity, and a lateral side of the pillar. Other examples and related methods are also disclosed herein.

Abstract: A gripper includes a finger module coupled to one side of a palm module, the palm module including a first power unit including a first rotary shaft and configured to rotate the first rotary shaft, a screw member configured to rotate in conjunction with a rotation of the first rotary shaft, a nut member coupled to the screw member, a first member coupled to the nut member and movable in a vertical direction in conjunction with a vertical motion of the nut member, the first member having a groove extending in one direction and having a recessed shape, and a connection member having a first side coupled to the finger module and a second side inserted into the groove, wherein the connection member is movable away from or toward the screw member by restriction between the connection member and an inner surface of the groove.

Abstract: In one example, an electronic device, comprises a first substrate comprising a first conductive structure, a second substrate comprising a second conductive structure, wherein the first substrate is over the second substrate, a first electronic component between the first substrate and the second substrate, a vertical interconnect between the first substrate and the second substrate, wherein the vertical interconnect is coupled with the first conductive structure and the second conductive structure, and an encapsulant between the first substrate and the second substrate and covering the vertical interconnect. A vertical port on the first electronic component is exposed by an aperture of the first substrate. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.