Abstract: The present invention relates to novel and stable salt forms of quetiapine, processes for preparation, pharmaceutical compositions, and method of treating thereof. More particularly, the present invention provides novel acid addition salts of quetiapine wherein the acid counter ion is provided by an acid selected from the group consisting of benzene sulfonic acid, dibenzoyl-L-(+)-tartaric acid and di-p-toluoyl-L-(+)-tartaric acid. The present invention also provides novel polymorphic forms of quetiapine salts selected from the group consisting of quetiapine hydrobromide, quetiapine sulfate, quetiapine nitrate and quetiapine citrate.

Abstract: Provided herein is an impurity of laquinimod, N-ethyl-N-phenyl-1,2-dihydro-4-hydroxy-1-methyl-2-oxoquinoline-3-carboxamide (deschloro laquinimod impurity), and process for preparation and isolation thereof. Provided further herein is a highly pure laquinimod or a pharmaceutically acceptable salt thereof substantially free of deschloro laquinimod impurity, processes for the preparation thereof, and pharmaceutical compositions comprising highly pure laquinimod or a pharmaceutically acceptable salt thereof substantially free of deschloro laquinimod impurity.

Abstract: Provided herein are improved, convenient and industrially advantageous processes for the preparation of N-[2-hydroxy-5-[(1R)-1-hydroxy-2-[[(1R)-2-(4-methoxyphenyl)-1-methylethyl]amino]ethyl]phenyl]formamide (Arformoterol) or a pharmaceutically acceptable salt thereof, in high yield and purity. Provided further herein is an improved and industrially advantageous process for the preparation of a substantially enantiomerically pure arformoterol intermediate, (R)-4-methoxy-?-methyl-N-(phenylmethyl)benzeneethanamine.

Abstract: Heater elements made of high resistivity ternary and quaternary thin films containing three or more of W, C, O, N and Si are provided. The thin films have resistivities at least about 1000 ??-cm at 50 to 60 Angstroms. The ternary and quaternary films have improved stability over binary films on anneal. Methods of depositing the thin films are also provided. The methods involve depositing the film from an organometallic tungsten precursor under conditions such that a highly resistive, continuous film is formed.

Abstract: Provided herein is an improved, convenient, commercially viable and environmentally friendly process for the preparation of varenicline or a pharmaceutically acceptable salt thereof comprising reacting 1-(4,5-diamino-10-aza-tricyclo[6.3.1.02.7]dodeca-2(7),3,5-trien-10-yl)-2,2,2-trifluoro-ethanone with chloroacetaldehyde in the presence of an oxygen source. Provided further herein is an improved and industrially advantageous process for the preparation of 1-(4,5-diamino-10-aza-tricyclo[6.3.1.02.7]dodeca-2(7),3,5-trien-10-yl)-2,2,2-trifluoro-ethanone.

Abstract: Improved methods of depositing copper seed layers in copper interconnect structure fabrication processes are provided. Also provided are the resulting structures, which have improved electromigration performance and reduced line resistance. According to various embodiments, the methods involve depositing a copper seed bilayer on a barrier layer in a recessed feature on a partially fabricated semiconductor substrate. The bilayer has a copper alloy seed layer and a pure copper seed layer, with the pure copper seed layer is deposited on the copper alloy seed layer. The copper seed bilayers have reduced line resistance increase and better electromigration performance than conventional doped copper seed layers. Precise line resistance control is achieved by tuning the bilayer thickness to meet the desired electromigration performance.

Abstract: Provided herein is a novel crystalline form of laquinimod, process for the preparation, pharmaceutical compositions, and method of treating thereof. Provided also herein are novel amorphous and polymorphic forms of laquinimod sodium, process for the preparation, pharmaceutical compositions, and method of treating thereof.

Abstract: The present invention relates to stable amorphous co-precipitates of atorvastatin pharmaceutically acceptable salts with pharmaceutically acceptable excipients, method for the preparation, pharmaceutical compositions, and method of treating thereof.

Abstract: Disclosed herein is an improved, commercially viable and industrially advantageous process for the preparation of quinoline-3-carboxamide derivatives such as laquinimod, or a pharmaceutically acceptable salt thereof, in high yield and purity.

Abstract: Described is a highly stable crystalline form of bosentan having a water content in the range of about 3-4% by weight, based on the total weight of the bosentan, (bosentan crystalline form A5), a process for preparation thereof, and pharmaceutical compositions comprising the bosentan crystalline form A5. Provided also herein is a bosentan impurity, p-tert-butyl-N[6-hydroxy-5-(2-methoxyphenoxy)-2-(2-pyrimidinyl)-4-pyrimidinyl]benzenesulfonamide (deshydroxyethyl bosentan impurity), and process for preparing and isolating thereof. Further provided are highly pure bosentan or a pharmaceutically acceptable salt thereof substantially free of deshydroxyethyl bosentan and bosentan dimer impurities, process for the preparation thereof, and pharmaceutical compositions comprising solid particles of highly pure bosentan or a pharmaceutically acceptable salt thereof, wherein 90 volume-percent of the particles (D90) have a size of less than about 300 microns.

Abstract: Disclosed herein are novel polymorphic forms of bosentan, processes for preparation, pharmaceutical compositions, and method of treating thereof.

Abstract: Disclosed herein is a novel and stable amorphous form of arformoterol L-(+)-tartrate, a process for its preparation, pharmaceutical compositions comprising amorphous arformoterol L-(+)-tartrate, and methods of treating with amorphous arformoterol L-(+)-tartrade.

Abstract: Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH3, H2, N2, and mixtures thereof. A dielectric diffusion barrier layer is then deposited.

Abstract: A system, method and medium of detecting a transition interface between a first dielectric material and an adjacent second dielectric material in a semiconductor wafer during a chemical-mechanical polishing process includes impinging an incident light of a predetermined wavelength on the semiconductor wafer at a first time, detecting at least one first intensity of at least one first reflected light, impinging the incident light of the predetermined wavelength on the semiconductor wafer at a second time, detecting at least one second intensity of at least one second reflected light, and determining a difference between the at least one first intensity and the at least one second intensity. If the difference between the at least one first intensity and the at least one second intensity is above a predetermined threshold, the chemical-mechanical polishing process is terminated.

Abstract: The present invention relates to novel and stable salt forms of quetiapine, processes for preparation, pharmaceutical compositions, and method of treating thereof. More particularly, the present invention provides novel acid addition salts of quetiapine wherein the acid counter ion is provided by an acid selected from the group consisting of benzene sulfonic acid, dibenzoyl-L-(+)-tartaric acid and di-p-toluoyl-L-(+)-tartaric acid. The present invention also provides novel polymorphic forms of quetiapine salts selected from the group consisting of quetiapine hydrobromide, quetiapine sulfate, quetiapine nitrate and quetiapine citrate.

Abstract: The present invention provides a novel polymorphic form of atorvastatin calcium, designated as form Al, process for preparation, pharmaceutical compositions, and method of treating thereof. The present invention further provides a process for the preparation of highly pure amorphous atorvastatin calcium using the novel atorvastatin calcium form Al. The present invention also relates to novel amorphous form of atorvastatin tert-butyl ester, chemically known as [R-(R*,R*)]-2-(4-fluorophenyl)-[?],[?]-dihydroxy -5-(1-methylethyl)-3-phenyl-4-(phenylcarbamoyl-1H-pyrrole-1-heptanoicacid tert-butyl ester, process for the preparation, and its application for preparing highly pure atorvastatin and its pharmaceutically acceptable salts thereof. The present invention also relates to use of the novel amorphous atorvastatin tert-butyl ester and novel atorvastatin calcium form al for preparing amorphous atorvastatin calcium.

Abstract: A diffusion barrier film includes a layer of compositionally graded titanium nitride, having a nitrogen-rich portion and a nitrogen-poor portion. The nitrogen-rich portion has a composition of at least about 40% (atomic) N, and resides closer to the dielectric than the nitrogen-poor portion. The nitrogen-poor portion has a composition of less than about 30% (atomic) N (e.g., between about 5-30% N) and resides in contact with the metal, e.g., copper. The diffusion barrier film can also include a layer of titanium residing between the layer of dielectric and the layer of compositionally graded titanium nitride. The layer of titanium is often partially or completely converted to titanium oxide upon contact with a dielectric layer. The barrier film having a compositionally graded titanium nitride layer provides excellent diffusion barrier properties, exhibits good adhesion to copper, and reduces uncontrolled diffusion of titanium into interconnects.

Abstract: Disclosed herein is an improved, commercially viable and industrially advantageous process for the preparation of substantially pure Lercanidipine intermediate, 1,1,N-trimethyl-N-(3,3-diphenylpropyl)-2-aminoethyl acetoacetate. The intermediate is useful for preparing Lercanidipine, or a pharmaceutically acceptable salt thereof, in high yield and purity. The present invention further provides a novel crystalline form of Lercanidipine hydrochloride and a process for its preparation. The present invention also provides a process for the preparation of amorphous form of Lercanidipine hydrochloride.

Abstract: An amorphous form of aprepitant and a process for its preparation is provided. Also provided are mixtures of polymorph Forms I and II of aprepitant and a process for the preparation thereof.

Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.