Patents by Inventor Gopal Raghavan

Gopal Raghavan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS transistor having a composite gate electrode and method of fabrication
    Patent number: 5625217
    Abstract: A novel, reliable, high performance MOS transistor with a composite gate electrode which is compatible with standard CMOS fabrication processes. The composite gate electrode comprises a polysilicon layer formed on a highly conductive layer. The composite gate electrode is formed on a gate insulating layer which is formed on a silicon substrate. A pair of source/drain regions are formed in the substrate and are self-aligned to the outside edges of the composite gate electrode.
    Type: Grant
    Filed: February 2, 1995
    Date of Patent: April 29, 1997
    Assignee: Intel Corporation
    Inventors: Robert S. Chau, David B. Fraser, Kenneth C. Cadien, Gopal Raghavan, Leopoldo D. Yau