Abstract: The invention relates to a pharmaceutical formulation, e.g. a paediatric formulation, of odevixibat, which comprises a plurality of small particles. The formulation may be used in the treatment of liver diseases such as bile acid-dependent liver diseases, and particularly cholestatic liver diseases such as biliary atresia, progressive familial intrahepatic cholestasis (PFIC), Alagille syndrome (ALGS) and paediatric cholestatic pruritus. The invention also relates to a process for the preparation of the pharmaceutical formulation.

Abstract: The invention relates to a pharmaceutical formulation, e.g. a paediatric formulation, of odevixibat, which comprises a plurality of small particles. The formulation may be used in the treatment of liver diseases such as bile acid-dependent liver diseases, and particularly cholestatic liver diseases such as biliary atresia, progressive familial intrahepatic cholestasis (PFIC), Alagille syndrome (ALGS) and paediatric cholestatic pruritus. The invention also relates to a process for the preparation of the pharmaceutical formulation.

Abstract: A method is provided by a central-unit-control plane (CU-CP) of a network node for exchanging information with a central-unit user plane (CU-UP) of the network node to manage Quality of Service (QoS) flows for the optimization of radio resources. The method includes transmitting, to the CU-UP, a request for flow information for at least one QoS flow and receiving, from the CU-UP of the network node, the flow information for the at least one QoS flow. Based on the flow information for the at least one QoS flow, at least one action is taken.

Abstract: There is provided a display device, which is arranged to display a predetermined fixed image, having a pixel electrode layer comprising a plurality of pixel portions, and opaque solidified electrolyte arranged in a plurality of separated segments in ionic contact with a respective pixel portion, wherein each electrolyte segment and respective pixel portion form a pixel element. The fixed image display further comprises at least one continuous electrode layer extending across at least two rows and two columns of the pixel matrix, and is connected to the electrolyte segments of a subset of the pixel elements. Upon application of an electric potential difference between the patterned electrode layer and the pixel electrode layer, the pixel portions of the subset of the pixel elements switch color.

Abstract: There is provided a display device, which is arranged to display a predetermined fixed image, having a pixel electrode layer comprising a plurality of pixel portions, and opaque solidified electrolyte arranged in a plurality of separated segments in ionic contact with a respective pixel portion, wherein each electrolyte segment and respective pixel portion form a pixel element. The fixed image display further comprises at least one continuous electrode layer extending across at least two rows and two columns of the pixel matrix, and is connected to the electrolyte segments of a subset of the pixel elements. Upon application of an electric potential difference between the patterned electrode layer and the pixel electrode layer, the pixel portions of the subset of the pixel elements switch color.

Abstract: A moisture sensor, for measuring moisture in a building without leaving visible scars to the building surface, is provided. The moisture sensor includes a flexible carrier carrying an antenna for receiving EM-radiation between 9 kHz and 11 MHz and a resonant circuit including a moisture reactive element. The moisture reactive element includes a hygroscopic electrolyte arranged between a first and a second electrode, wherein the electrolyte in the presence of moisture forms mobile ions and provides a complex impedance at least in response to the alternating voltage, which complex impedance varies with the moisture content of the electrolyte.

Abstract: In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrodes and/or contacts are either provided in the memory unit or in the read/write unit and contacts are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be polarized into two discernible polarization states.

Abstract: A moister sensor, for measuring moister in a building without leaving visible scars to the building surface, is provided. The moister sensor includes a flexible carrier carrying an antenna for receiving EM-radiation between 9 kHz and 11 MHz and a resonant circuit including a moister reactive element. The moister reactive element includes a hygroscopic electrolyte arranged between a first and a second electrode, wherein the electrolyte in the presence of moister forms mobile ions and provides a complex impedance at least in response to the alternating voltage, which complex impedance varies with the moister content of the electrolyte.

Abstract: A fast organic field effect transistor (100), which operates at low voltages, is achieved by the introduction of an oligomeric or polymeric electrolyte (131) between the gate electrode (141) and the organic semiconductor layer (121), which electrolyte (131) has a dissociation constant of at least 10?8. Said organic semiconductor layer (121) is in contact with the source electrode (111) and the drain electrode (112) of the transistor. In operation a potential (152) applied to said gate electrode (141) controls the current A between said source electrode (111) and said drain electrode (112).

Abstract: In a method in the fabrication of a ferroelectric memory device comprising a memory layer sandwiched between first and second electrode sets, the memory layer as well as both electrode sets are each realized in the memory device by a suitable printing process.

Abstract: The method is for providing a service system. The method identifies a location of a user of the service system. The user selects a category of the service system. A database is searched for service providers of the selected category. The method identifies a first location of a first service provider and a second location of a second service provider found in the search for the selected category. The first location is closer to the location of the user than the second location. The first and second service providers are ranked regarding proximity to the location of the user so that the first service provider is ranked higher and listed before the second service provider. A map is provided showing the location of the user, the first location of the first service provider and the second location of the second service provider.

Abstract: In an organic electronic circuit, particularly a memory circuit with an organic ferroelectric or electret material the active material comprises fluorine atoms and consists of various organic materials. The active material is located between a first electrode and a second electrode. A cell with a capacitor-like structure is defined in the active material and can be accessed for an addressing operation via the first and the second electrode. At least one of these electrodes comprises a layer of chemically modified gold. In a passive matrix-addressable electronic device, particularly a ferroelectric or electret memory device, circuits of this kind with the active material as a ferroelectric or electret memory material form the elements of a matrix-addressable array and define the memory cells provided between first and second set of addressing electrodes. At least the electrodes of at least one of the sets then comprise at least a layer of gold.

Abstract: In a non-volatile electric memory system a memory unit (4) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected.

Abstract: In an organic electronic circuit, particularly memory circuit with an organic ferroelectric or electret material the active material comprises fluorine atoms and consists of various organic materials. The active material is located between first and second electrode sets constituting respectively bottom and top electrodes of the device. A cell with a capacitor like structure is defined in the active material and can be accessed for an addressing operation via the electrodes. At least one top electrode comprises a layer of gold in contact with active material. A second layer on the top electrode comprises conducting material different from gold or can alternatively also be made of gold. A via connection extends between the second electrode layer and a bottom electrode or another electrode in the bottom electrode layer. In case the second electrode layer is made of gold the via metal of the via connection can also be gold and integral with the second electrode layer.

Abstract: An organic electronic device consists of one or more electro-active organic or polymer materials sandwiched between electrodes. Critical in such devices is the interface between the electrode and the polymer, where degradation or chemical reaction products may develop that are deleterious to the proper functioning of the device. This is solved by introducing a functional interlayer composed of one or more materials consisting of a molecular backbone bearing phosphonate or phosphate functions, either directly attached or through side chains, said functional layer being disposed between at least one of the respective electrodes and said one or more electro-active materials in the device.

Abstract: In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states.

Abstract: A fast organic field effect transistor (100), which operates at low voltages, is achieved by the introduction of an oligomeric or polymeric electrolyte (131) between the gate electrode (141) and the organic semiconductor layer (121), which electrolyte (131) has a dissociation constant of at least 10?8. Said organic semiconductor layer (121) is in contact with the source electrode (111) and the drain electrode (112) of the transistor. In operation a potential (152) applied to said gate electrode (141) controls the current A between said source electrode (111) and said drain electrode (112).

Abstract: In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.

Abstract: In a memory and/or data processing device having at least two stacked layers which are supported by a substrate or forming a sandwiched self-supporting structure, wherein the layers include memory and/or processing circuitry with mutual connections between the layers and/or to circuitry in the substrate, the layers the are mutually arranged such that contiguous layers form a staggered structure on at least one edge of the device and at least one electrical edge conductor is provided passing over the edge on one layer and down one step at a time, enabling the connection to an electrical conductor in any of the following layers in the stack. A method for manufacturing a device of this kind includes the steps for adding the layers successively, one layer at a time, such that the layers form a staggered structure, and for providing one or more layers with at least one electrical contact pad for linking to one or more interlayer edge connectors.

Abstract: In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.