Abstract: The present invention relates to a process for producing PET based on titanium catalyst having acceptable properties for resin used in the production of bottles for beverages. More particularly the invention relates to a process in which the incoming pre-polymer temperature is higher than the final outlet temperature in the final melt phase polycondensation reactor.

Abstract: Systems and methods for transforming applications to provide uniform mechanisms for commenting on application objects, and mechanisms for collecting and processing feedback are described herein. An aspect provides for analyzing application code for at least one user action event handler associated with at least one object; and for modifying each at least one user action event handler located within the application code to contain at least one action configured to handle feedback for the associated at least one object; wherein invoking the at least one user action event handler triggers the at least one action configured to handle feedback. Other embodiments and aspects are also described herein.

Abstract: A method of forming a body-tie. The method includes forming the body-tie during an STI scheme of an SOI process. During the STI scheme, a first trench is formed. The first trench stops before a buried oxide layer of the SOI substrate. The first trench may determine a height of body tie that is shared between at least two FETs. A second trench may also be formed within the first trench. The second trench stops in the SOI substrate. The second trench defines the location and shape of a body-tie. Once the location and shape of the body-tie are defined, an oxide is deposited above the body-tie. The deposited oxide prevents certain implants from entering the body tie. By preventing these implants, a source and a drain implant may be self-aligned to the source and drain areas without requiring the use of the photoresist mask to shield the body tie regions from the source and drain implant.

Abstract: A resistor capacitor structure and a method of fabrication. A resistor capacitor structure provides a capacitance between at least two nodes within a microelectronic circuit. A bottom plate of the resistor capacitor structure comprises a resistance layer, which in turn provides a resistance path between an additional node within the circuit. The resistor capacitor structure may be formed on top or within interlevel dielectric layers. The resistance layer, alternatively, may be used to fill a cavity located between interlevel dielectric layers and accordingly provide a resistance path between the interlevel dielectric layers.

Abstract: In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.

Abstract: A method of forming a body-tie. The method includes forming the body-tie during an STI scheme of an SOI process. During the STI scheme, a first trench is formed. The first trench stops before a buried oxide layer of the SOI substrate. The first trench may determine a height of body tie that is shared between at least two FETs. A second trench may also be formed within the first trench. The second trench stops in the SOI substrate. The second trench defines the location and shape of a body-tie. Once the location and shape of the body-tie are defined, an oxide is deposited above the body-tie. The deposited oxide prevents certain implants from entering the body tie. By preventing these implants, a source and a drain implant may be self-aligned to the source and drain areas without requiring the use of the photoresist mask to shield the body tie regions from the source and drain implant.

Abstract: A method using a spatial-temporal software game for both teaching math concepts to a child and for scoring the child's proficiency in these math concepts. These scores are compared with the child's performance on a language-based test of the math concepts. If the child's score on the language-based test is lower than what is reflected by the child's game scores, instruction is given the child using stories and flashcards related to the spatial-temporal software games so that the child will relate vocabulary terms with the math concepts and characters in the temporal-spatial software game.

Abstract: The present invention is a process for recycling colored polyester. More specifically, colored polyester for recycling is depolymerized by the addition of glycol to form the monomer BHET. The BHET is contacted with activated carbon to remove some colorant. The remaining colorant is extracted with water, alcohol, or glycol to produce white, purified BHET. The white, purified BHET is separated from the extraction solvent (water, alcohol, or glycol) by filtering, decanting, or centrifuging, for example. The purified BHET monomer can be polymerized to polyethylene terephthalate meeting food contact specifications, using known polymerization processes.

Abstract: In a process of making a magnetoresistive memory device, a mask layout is produced by use of any suitable design tool. The mask layout is laid out in grids having a central grid forming a central section and grids forming bit end sections, and the grids of the bit end sections are rectangles. A mask is made by use of the mask layout, and the mask has stepped bit ends. The mask is used to make a magnetic storage layer having tapered bit ends, to make a magnetic sense layer having tapered bit ends, and to make a non-magnetic layer having tapered bit ends. The non-magnetic layer is between the magnetic sense layer and the magnetic storage layer.

Abstract: In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.

Abstract: In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.

Abstract: The present invention is a process for recycling colored polyester. More specifically, colored polyester for recycling is depolymerized by the addition of glycol to form the monomer BHET. The BHET is contacted with activated carbon to remove some colorant. The remaining colorant is extracted with water, alcohol, or glycol to produce white, purified BHET. The white, purified BHET is separated from the extraction solvent (water, alcohol, or glycol) by filtering, decanting, or centrifuging, for example. The purified BHET monomer can be polymerized to polyethylene terephthalate meeting food contact specifications, using known polymerization processes.

Abstract: In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.

Abstract: In a process of making a magnetoresistive memory device, a mask layout is produced by use of any suitable design tool. The mask layout is laid out in grids having a central grid forming a central section and grids forming bit end sections, and the grids of the bit end sections are rectangles. A mask is made by use of the mask layout, and the mask has stepped bit ends. The mask is used to make a magnetic storage layer having tapered bit ends, to make a magnetic sense layer having tapered bit ends, and to make a non-magnetic layer having tapered bit ends. The non-magnetic layer is between the magnetic sense layer and the magnetic storage layer.

Abstract: A method and device for monitoring and optionally controlling the absolute inventory of a dynamic fluid in a vessel having at least one agitator with a rotatable shaft extending in an essentially horizontal direction, wherein there is a resultant force acting on the agitator in an essentially vertical direction in relation to the shaft and a relationship exists between the absolute inventory and the force acting on the agitator in the essentially vertical direction. The method comprises determining a correlation between the vessel absolute inventory and resultant force, measuring the resultant force, and thereby determining a relative absolute inventory within the vessel. The determined absolute inventory value may then be used as a control variable for use in controlling the absolute inventory within the vessel.

Abstract: A pressure process for preparing a hydroxyalkyl ester monomer and oligomer that can be used to prepare a polyester such as polyethylene terephthalate (PET) is disclosed. The process includes the steps of reacting, by ethoxylation, dicarboxylic acid and alkylene oxide in the presence of a compressed gas medium to form a specified mixture of monohydroxyalkyl ester and bishydroxyalkyl ester. The reaction pressure is such that the density of the gas medium is greater than or equal to half the critical density of the compressed gas medium. The mole ratio of the alkylene oxide to the dicarboxylic acid is less than about 2:1, and preferably 1.1:1.2. The DP of all reaction products is less than 5. The reactant product may be polymerized into a polyester. The process may optionally employ catalysts such as amines or amino acids. The compressed gas medium can be a solvent and an optional cosolvent. The temperature of reaction is from about 100° C. to 240° C. at a pressure of 50-5000 psi.

Abstract: A process for oxidizing the silicon layer into a device-isolating field oxide having a radiation-hardened reduced bird's beak. An angled and rotated field implant prior to oxidation is used to increase the doping concentration in the edge region of the MOS transistors to compensate for boron leaching during oxidation. The field oxide is grown at a low temperature by high pressure oxidation which increases total dose hardness by making a silicon-rich oxide film.

Abstract: A process is disclosed for the preparation of a polyester polymer or polyester copolymer under superatmospheric pressure conditions in a pipe or tubular reaction under turbannular flow conditions. Reaction material having a glycol equivalents to carboxylic acid equivalents mole ratio of from 1.0:1 to 1.2:1, together with a superatmospheric dense gaseous medium are fed co-currently to the reactor. Dicarboxylic acid and/or diol raw materials may be injected into any of the reaction zones in the process during operation to achieve the overall desired mole ratio balance. The process operates at temperatures of from about 220.degree. C. to about 320.degree. C., with turbannular flow achieved before the polymer product and gas exit the reactor process. The pressure in the reaction zones can be in the range from 15 psia to 2500 psia.

Abstract: A process is disclosed for the preparation of a polyester polymer or polyester copolymer under superatmospheric pressure conditions in a pipe or tubular reaction under turbannular flow conditions. Reaction material having a glycol equivalents to carboxylic acid equivalents mole ratio of from 1.0:1 to 1.2:1, together with a superatmospheric dense gaseous medium are fed co-currently to the reactor. Dicarboxylic acid and/or diol raw materials may be injected into any of the reaction zones in the process during operation to achieve the overall desired mole ratio balance. The process operates at temperatures of from about 220.degree. C. to about 320.degree. C., with turbannular flow achieved before the polymer product and gas exit the reactor process. The pressure in the reaction zones can be in the range from 15 psia to 2500 psia.

Abstract: The invention relates to a device, in particular for the treatment of low-viscosity polymer melts, containing a vessel (1) with a stirrer element, the stirrer element (6) essentially comprising a support structure which passes through the vessel and on which surface formers (8) are arranged. According to the invention, the support structure is designed as a cage-like rod frame (7).This results in the following advantages:1. Owing to the now possible continuous wetting or wiping of the surfaces, encrustations and inhomogeneities are avoided.2. Due to enhanced cascading with weir plates, the residence time spectrum can be controlled, which likewise improves the product quality.3. The flexing of the stirrer element is reduced.