Abstract: A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode elements on the switching element, to thereby provide a thermal dissipation path for the respective diode elements. The respective diode elements are arranged on a non-central portion of the switching element, to facilitate dissipation of the heat produced by each of the diode elements, whereby the temperature rise in the semiconductor module is reduced.

Abstract: A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode elements on the switching element, to thereby provide a thermal dissipation path for the respective diode elements. The respective diode elements are arranged on a non-central portion of the switching element, to facilitate dissipation of the heat produced by each of the diode elements, whereby the temperature rise in the semiconductor module is reduced.

Abstract: A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode elements on the switching element, to thereby provide a thermal dissipation path for the respective diode elements. The respective diode elements are arranged on a non-central portion of the switching element, to facilitate dissipation of the heat produced by each of the diode elements, whereby the temperature rise in the semiconductor module is reduced.

Abstract: A power conversion portion (10) and a connection portion (20) converting power between a fuel cell (FC) and a battery (BAT) corresponding to dc power supply and a motor generator (MG) corresponding to an ac machine, are configured of a matrix converter. For a power flow pattern requiring that the dc power supply provide high voltage, a switch (SCd) in the connection portion (20) operates in response to a control signal received from a control device (30) to electrically connect a power supply line (LC) to a power supply line (Ld) to connect the fuel cell (FC) and the battery (BAT) in series.

Abstract: A power conversion portion (10) and a connection portion (20) converting power between a fuel cell (FC) and a battery (BAT) corresponding to dc power supply and a motor generator (MG) corresponding to an ac machine, are configured of a matrix converter. For a power flow pattern requiring that the dc power supply provide high voltage, a switch (SCd) in the connection portion (20) operates in response to a control signal received from a control device (30) to electrically connect a power supply line (LC) to a power supply line (Ld) to connect the fuel cell (FC) and the battery (BAT) in series.

Abstract: A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back surfaces facing each other, an isolating region formed in the substrate to extend from the front surface to the back surface of the substrate, and first and second MOSFETs formed on opposite sides of the isolating region, respectively.

Abstract: A power module includes a first substrate with a power semiconductor device mounted thereon, a second substrate with a control circuit for controlling the power semiconductor device formed thereon, a smoothing capacitor electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device, and a case including a case frame and a case lid. The case has an interior in which the first substrate, the second substrate and the smoothing capacitor are disposed, and the smoothing capacitor is disposed in contact with a side surface of the case frame.

Abstract: A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

Abstract: A power module includes a substrate with a power semiconductor device mounted thereon, a case having an interior in which the substrate is disposed, a cooling fin having a surface on which the substrate and the case are placed, and a smoothing capacitor disposed on an opposite surface of the cooling fin from the surface on which the substrate is placed, the smoothing capacitor being electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device.

Abstract: A controller for controlling a power device in response to an input signal includes a first signal generator for generating a first signal in response to the input signal; a level shifter for changing an output level of the first signal to a value which is a function of a first main power supply potential in order to produce a second signal; and a first control signal generator for generating the control signal for a first semiconductor device in response to the second signal. The level shifter includes at least one level shifting semiconductor element wherein the semiconductor element is controlled by the first signal and the at least one level shifting semiconductor element exhibiting breakdown voltage characteristics whereby a breakdown voltage has a value not less than a voltage in the range between a value of the first and a value of a second main power supply potential.

Abstract: A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back surfaces facing each other, an isolating region formed in the substrate to extend from the front surface to the back surface of the substrate, and first and second MOSFETs formed on opposite sides of the isolating region, respectively.

Abstract: It is an object of the present invention to provide an inverter circuit including a power arm ensuring a high breakdown voltage and having low probability of malfunction. In a power arm element consisting of a switching element and a diode connected in inverse-parallel connection thereto, n free wheeling diodes (n≧2) connected in series are connected in inverse-parallel connection to a switching element (1b). A breakdown voltage between an anode and a cathode of each free wheeling diode is defined to be 1/n of a breakdown voltage of the switching element (1b). That is, the breakdown voltage of each free wheeling diode is reduced to 1/n to reduce a thickness of a n− drift region. A transient voltage characteristic during flow of a free wheeling current can be thereby kept low. The drop in the breakdown voltage is compensated with the n free wheeling diodes connected in series, to thereby ensure breakdown voltage of a degree approximately the same as that of the switching element.

Abstract: In a semiconductor substrate, semiconductor regions belonging to the IGBT are formed in an IGBT region and semiconductor regions belonging to the diode are formed in a diode region. The IGBT and the diode are connected in anti-parallel to each other. A trench in which an insulator is buried is formed between the IGBT region and the diode region. The insulator restricts the reverse recovery current which flows from the diode region into the IGBT region. Thus, semiconductor regions of an IGBT and a diode connected in anti-parallel with each other are fabricated in a single semiconductor substrate and the chip size is reduced.

Abstract: A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

Abstract: A power module is provided with an insulating substrate with a heat sink being bonded to one surface thereof and a circuit pattern being formed on the other surface. The circuit pattern is formed by an electrode layer. A switching semiconductor element and a free wheeling diode that is connected to a switching semiconductor element in anti-parallel therewith are placed on the circuit pattern. A controlling IC for controlling the switching semiconductor element is placed on the free wheeling diode. Thus, it is possible to make the entire power module compact, and it becomes possible to provide an inexpensive power module which can prevent the controlling IC from malfunctioning due to heat generated by the switching semiconductor element.

Abstract: A semiconductor device comprising at least one power device, at least one control element for controlling the power device(s), a plurality of first terminals connected to the power device(s), a plurality of second terminals connected to the control element(s), a support member having a heat sink disposed on a lower surface of the support member and the power device(s), control element(s), and first and second terminals arranged on the upper surface of the support member, and a package including the support member for sealing the devices and one end of the terminals such that first and second terminals protrude from different sides of the package. The arrangement allows a reduced size three-phase motor drive controller, a reduction in noise interference to the control element, and reduction in terminal pitch size.

Abstract: A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

Abstract: A controller for power devices which is not required to individually insulate high and low potential portions and to include an insulated power supply is disclosed. An external controller (6) is connected to a second internal control circuit (4) which is in turn connected to a level shift circuit (5) and a gate electrode of a transistor (Q2). Power supply voltage (V1) is applied to the second internal control circuit (4) for operation thereof. The level shift circuit (5) is connected to a first internal control circuit (3) which is in turn connected to a gate electrode of a transistor (Q1) and a charge pump circuit (7). Control of a first semiconductor circuit is made through the level shift means in response to an input signal generated on the basis of a second main power supply potential, thereby achieving increased responsiveness of the power devices to a control signal and improved integration.

Abstract: In a semiconductor substrate (100), semiconductor regions (1, 2, 3, 5) belonging to the IGBT are formed in an IGBT region (20) and semiconductor regions (1, 4) belonging to the diode are formed in a diode region (21). The IGBT and the diode are connected in anti-parallel to each other. A trench (15) in which an insulator (16) is buried is formed between the IGBT region (20) and the diode region (21). The insulator (16) restricts the reverse recovery current which flows from the diode region (21) into the IGBT region (20). Thus, semiconductor regions of an IGBT and a diode connected in anti-parallel with each other are fabricated in a single semiconductor substrate and the chip size is reduced.

Abstract: It is an object to enhance a breakdown voltage without requiring a complicated manufacturing process while maintaining a stable operation. A control signal (A) output from an MCU (11) is transmitted to a driving circuit (3a) for driving a power switching element (1a) of an upper arm through two-stage level shift circuits. The level shift circuit in a first stage is constituted by a series circuit of a switching element (13) and a resistive element (14), and the level shift circuit in a second stage is constituted by a series circuit of a switching element (16) and a resistive element (17).