Patents by Inventor Gowri Kamarthy
Gowri Kamarthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10424461Abstract: Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold.Type: GrantFiled: November 13, 2018Date of Patent: September 24, 2019Assignee: Lam Research CorporationInventors: Thorsten Lill, Harmeet Singh, Alex Paterson, Gowri Kamarthy
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Publication number: 20190103253Abstract: Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold.Type: ApplicationFiled: November 13, 2018Publication date: April 4, 2019Inventors: Thorsten Lill, Harmeet Singh, Alex Paterson, Gowri Kamarthy
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Patent number: 10224221Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.Type: GrantFiled: February 26, 2016Date of Patent: March 5, 2019Assignee: Lam Research CorporationInventors: Harmeet Singh, Thorsten Lill, Vahid Vahedi, Alex Paterson, Monica Titus, Gowri Kamarthy
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Patent number: 10141163Abstract: Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold.Type: GrantFiled: September 9, 2016Date of Patent: November 27, 2018Assignee: Lam Research CorporationInventors: Thorsten Lill, Harmeet Singh, Alex Paterson, Gowri Kamarthy
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Patent number: 9633846Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber. The ion-ion plasma may be used to advantage in a variety of etching processes.Type: GrantFiled: November 30, 2015Date of Patent: April 25, 2017Assignee: Lam Research CorporationInventors: Alex Paterson, Do Young Kim, Gowri Kamarthy, Helene Del Puppo, Jen-Kan Yu, Monica Titus, Radhika Mani, Noel Yui Sun, Nicolas Gani, Yoshie Kimura, Ting-Ying Chung
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Patent number: 9589853Abstract: A method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber comprises supporting the substrate on a support surface of a substrate support assembly that includes an array of independently controlled thermal control elements therein which are operable to control the spatial and temporal temperature of the support surface of the substrate support assembly to form independently controllable heater zones which are formed to correspond to a desired temperature profile across the upper surface of the semiconductor substrate. The etch rate across the upper surface of the semiconductor substrate during plasma etching depends on a localized temperature thereof wherein the desired temperature profile is determined such that the upper surface of the semiconductor substrate is planarized within a predetermined time. The substrate is plasma etched for the predetermined time thereby planarizing the upper surface of the substrate.Type: GrantFiled: July 22, 2014Date of Patent: March 7, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Monica Titus, Gowri Kamarthy, Harmeet Singh, Yoshie Kimura, Meihua Shen, Baosuo Zhou, Yifeng Zhou, John Hoang
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Publication number: 20160379804Abstract: Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold.Type: ApplicationFiled: September 9, 2016Publication date: December 29, 2016Inventors: Thorsten Lill, Harmeet Singh, Alex Paterson, Gowri Kamarthy
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Patent number: 9460894Abstract: Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold.Type: GrantFiled: June 28, 2013Date of Patent: October 4, 2016Assignee: Lam Research CorporationInventors: Thorsten Lill, Harmeet Singh, Alex Paterson, Gowri Kamarthy
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Publication number: 20160203990Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.Type: ApplicationFiled: February 26, 2016Publication date: July 14, 2016Inventors: Harmeet Singh, Thorsten Lill, Vahid Vahedi, Alex Paterson, Monica Titus, Gowri Kamarthy
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Patent number: 9385003Abstract: Systems and methods for etching a substrate include arranging a substrate including a first structure and a dummy structure in a processing chamber. The first structure is made of a material selected from a group consisting of silicon dioxide and silicon nitride. The dummy structure is made of silicon. Carrier gas is supplied to the processing chamber. Nitrogen trifluoride and molecular hydrogen gas are supplied to the processing chamber. Plasma is generated in the processing chamber. The dummy structure is etched.Type: GrantFiled: February 16, 2015Date of Patent: July 5, 2016Assignee: LAM RESEARCH CORPORATIONInventors: Ming-Shu Kuo, Qinghua Zhong, Helene Del Puppo, Ganesh Upadhyaya, Gowri Kamarthy
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Publication number: 20160181130Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.Type: ApplicationFiled: February 26, 2016Publication date: June 23, 2016Inventors: Harmeet Singh, Thorsten Lill, Vahid Vahedi, Alex Paterson, Monica Titus, Gowri Kamarthy
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Publication number: 20160086795Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber. The ion-ion plasma may be used to advantage in a variety of etching processes.Type: ApplicationFiled: November 30, 2015Publication date: March 24, 2016Inventors: Alex Paterson, Do Young Kim, Gowri Kamarthy, Helene Del Puppo, Jen-Kan Yu, Monica Titus, Radhika Mani, Noel Yui Sun, Nicolas Gani, Yoshie Kimura, Ting-Ying Chung
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Publication number: 20160049495Abstract: Semiconductor structures and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a portion of the multiple conformal gate layers below an upper surface of the gate structure, where upper surfaces of recessed, multiple conformal gate layers are coplanar; and removing a portion of the gate material to facilitate an upper surface of a remaining portion of the gate material to be coplanar with an upper surface of the recessed, multiple conformal gate layers.Type: ApplicationFiled: August 18, 2014Publication date: February 18, 2016Applicants: LAM RESEARCH CORPORATION, GLOBALFOUNDRIES INC.Inventors: Kristina TREVINO, Yuan-Hung LIU, Gabriel Padron WELLS, Xing ZHANG, Hoong Shing WONG, Chang Ho MAENG, Taejoon HAN, Gowri KAMARTHY, Isabelle ORAIN, Ganesh UPADHYAYA
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Patent number: 9252238Abstract: Semiconductor structures and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a portion of the multiple conformal gate layers below an upper surface of the gate structure, where upper surfaces of recessed, multiple conformal gate layers are coplanar; and removing a portion of the gate material to facilitate an upper surface of a remaining portion of the gate material to be coplanar with an upper surface of the recessed, multiple conformal gate layers.Type: GrantFiled: August 18, 2014Date of Patent: February 2, 2016Assignees: LAM RESEARCH CORPORATION, GLOBALFOUNDRIES INC.Inventors: Kristina Trevino, Yuan-Hung Liu, Gabriel Padron Wells, Xing Zhang, Hoong Shing Wong, Chang Ho Maeng, Taejoon Han, Gowri Kamarthy, Isabelle Orain, Ganesh Upadhyaya
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Patent number: 9245761Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.Type: GrantFiled: June 12, 2013Date of Patent: January 26, 2016Assignee: Lam Research CorporationInventors: Harmeet Singh, Thorsten Lill, Vahid Vahedi, Alex Paterson, Monica Titus, Gowri Kamarthy
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Patent number: 9230819Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber. The ion-ion plasma may be used to advantage in a variety of etching processes.Type: GrantFiled: February 19, 2014Date of Patent: January 5, 2016Assignee: Lam Research CorporationInventors: Alex Paterson, Do Young Kim, Gowri Kamarthy, Helene Del Puppo, Jen-Kan Yu, Monica Titus, Radhika Mani, Noel Yui Sun, Nicolas Gani, Yoshie Kimura, Ting-Ying Chung
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Publication number: 20150249016Abstract: A method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber comprises supporting the substrate on a support surface of a substrate support assembly that includes an array of independently controlled thermal control elements therein which are operable to control the spatial and temporal temperature of the support surface of the substrate support assembly to form independently controllable heater zones which are formed to correspond to a desired temperature profile across the upper surface of the semiconductor substrate. The etch rate across the upper surface of the semiconductor substrate during plasma etching depends on a localized temperature thereof wherein the desired temperature profile is determined such that the upper surface of the semiconductor substrate is planarized within a predetermined time. The substrate is plasma etched for the predetermined time thereby planarizing the upper surface of the substrate.Type: ApplicationFiled: July 22, 2014Publication date: September 3, 2015Inventors: Monica Titus, Gowri Kamarthy, Harmeet Singh, Yoshie Kimura, Meihua Shen, Baosuo Zhou, Yifeng Zhou, John Hoang
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Patent number: 9012243Abstract: Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system. The controller also receives critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data of the at least one previously processed wafers and the critical device parameters of the current wafer.Type: GrantFiled: August 27, 2014Date of Patent: April 21, 2015Assignee: Lam Research CorporationInventors: Yoshie Kimura, Tom Kamp, Eric Pape, Rohit DeshPande, Keith Gaff, Gowri Kamarthy
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Patent number: 8999184Abstract: A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H2. A plasma is formed from the treatment gas. The patterned via holes are rounded to form patterned rounded via holes by exposing the patterned via holes to the plasma. The flow of the treatment gas is stopped. The plurality of patterned rounded via holes are transferred into the etch layer.Type: GrantFiled: August 3, 2012Date of Patent: April 7, 2015Assignee: Lam Research CorporationInventors: Ming-Shu Kuo, Siyi Li, Yifeng Zhou, Ratndeep Srivastava, Tae Won Kim, Gowri Kamarthy
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Publication number: 20150053347Abstract: Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system. The controller also receives critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data of the at least one previously processed wafers and the critical device parameters of the current wafer.Type: ApplicationFiled: August 27, 2014Publication date: February 26, 2015Inventors: Yoshie Kimura, Tom Kamp, Eric Pape, Rohit DeshPande, Keith Gaff, Gowri Kamarthy