Patents by Inventor Guan Chew
Guan Chew has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12077325Abstract: An aircraft includes a wing having an integrated ducted fan. The ducted fan is optionally equipped with inlet louvers and outlet louvers. The inlet louvers and the outlet louvers are adjustable between an open position and a closed position.Type: GrantFiled: April 21, 2021Date of Patent: September 3, 2024Assignee: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Guan Chew, Michael Fürstner, Stefan Bender, Mikel Fauri, Malte Rotermund
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Patent number: 12043367Abstract: An aircraft includes a wing having an integrated ducted fan. The ducted fan is enclosed at least in sections by a feed lip. The feed lip has a flat curvature on the bow side and a comparatively strong curvature on the rear side.Type: GrantFiled: April 21, 2021Date of Patent: July 23, 2024Assignee: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Guan Chew, Michael Fürstner, Stefan Bender, Mikel Fauri, Malte Rotermund
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Patent number: 11873084Abstract: An aircraft includes a wing that is extended through by a ducted fan having movable louvers.Type: GrantFiled: May 8, 2020Date of Patent: January 16, 2024Inventors: Guan Chew, Stefan Bender, Michael Fuerstner, Mikel Fauri
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Publication number: 20230257104Abstract: An aircraft includes a wing having an integrated ducted fan. The ducted fan is enclosed at least in sections by a feed lip. The feed lip has a flat curvature on the bow side and a comparatively strong curvature on the rear side.Type: ApplicationFiled: April 21, 2021Publication date: August 17, 2023Applicant: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Guan Chew, Michael Fürstner, Stefan Bender, Mikel Fauri, Malte Rotermund
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Publication number: 20230182897Abstract: An aircraft includes a wing having an integrated ducted fan. The ducted fan is equipped with inlet louvers and outlet louvers. The inlet louvers are adjustable between an open position and a closed position by an actuating mechanism.Type: ApplicationFiled: April 21, 2021Publication date: June 15, 2023Applicant: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Guan Chew, Michael Fürstner, Stefan Bender, Mikel Fauri, Malte Rotermund
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Publication number: 20230174253Abstract: An aircraft includes a wing having an integrated ducted fan. The ducted fan is optionally equipped with inlet louvers and outlet louvers. The inlet louvers and the outlet louvers are adjustable between an open position and a closed position.Type: ApplicationFiled: April 21, 2021Publication date: June 8, 2023Applicant: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Guan Chew, Michael Fürstner, Stefan Bender, Mikel Fauri, Malte Rotermund
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Publication number: 20200354052Abstract: An aircraft includes a wing that is extended through by a ducted fan having movable louvers.Type: ApplicationFiled: May 8, 2020Publication date: November 12, 2020Applicant: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Guan Chew, Stefan Bender, Michael Fuerstner, Mikel Fauri
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Patent number: 9355874Abstract: A single wafer etching apparatus and various methods implemented in the single wafer etching apparatus are disclosed. In an example, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid/sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid/sulfuric acid mixture.Type: GrantFiled: September 24, 2011Date of Patent: May 31, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Weibo Yu, Hsueh-Chin Lu, Han-Guan Chew, Kuo Bin Huang, Chao-Cheng Chen, Syun-Ming Jang
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Patent number: 9105692Abstract: A method for fabricating an interconnection structure in a complementary metal-oxide-semiconductor (CMOS) includes forming an opening in a dielectric layer over a substrate and forming a dummy electrode in a first portion of the opening in the dielectric layer. The method further includes filling a second portion of the opening with a second work-function metal layer, wherein a top surface of the second work-function metal layer is below a top surface of the opening and removing the dummy electrode. The method further includes depositing a first work-function metal layer in the first and second portions, whereby the first work-function metal layer is over the second work-function metal layer in the opening and depositing a signal metal layer over the first work-function metal layer in the first and second portions.Type: GrantFiled: October 21, 2013Date of Patent: August 11, 2015Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Han-Guan Chew, Ming Zhu, Lee-Wee Teo, Harry-Hak-Lay Chuang
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Patent number: 9048463Abstract: A pouch-cell battery arrangement has a shrink sleeve covering (50), that surrounds the pouch (22) at least in places in an interlocking manner.Type: GrantFiled: May 9, 2011Date of Patent: June 2, 2015Assignee: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Dirk Lappe, Ralf Bauer, Hartmut Chodura, Guan Chew
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Patent number: 8999544Abstract: An electric energy store (10) of a motor vehicle, in particular a high voltage energy store of a hybrid vehicle or an electric vehicle, has a housing (11) and storage modules (12) accommodated in the housing. The housing (11) has a supporting element (17) with an annular supporting frame (18) made from a fiber reinforced plastic and via which the electric energy store (10) can be connected to a body structure of a motor vehicle.Type: GrantFiled: February 10, 2012Date of Patent: April 7, 2015Assignee: Dr. Ing. h.c.F. Porsche AktiengesellschaftInventors: Stefan Bender, Guan Chew, Steffen Maurer
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Patent number: 8887844Abstract: A vehicle having an electric drive device and an energy storage device which is arranged in a housing is disclosed. The energy storage device is formed from a plurality of cells. The housing includes a plurality of partitioning devices, with the result that at least one partitioning device is positioned between two cells. The housing of the energy storage device is connected both to a cooling air intake duct, having an inlet opening, and to a cooling air outflow duct, having an outlet opening. At least one partitioning device is configured in such a way that a plurality of cooling ducts are formed between the cells, and cooling air can flow through the cooling ducts in order to cool the energy storage device.Type: GrantFiled: January 27, 2011Date of Patent: November 18, 2014Assignee: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Guan Chew, Miroslaw Oslislok, Hartmut Chodura, Patrik Gisch, Steffen Maurer, Ralf Bauer
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Patent number: 8835294Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure on the substrate, the gate structure including a dummy gate, removing the dummy gate from the gate structure thereby forming a trench, forming a work function metal layer partially filling the trench, forming a fill metal layer filling a remainder of the trench, performing a chemical mechanical polishing (CMP) to remove portions of the metal layers outside the trench, and implanting Si, C, or Ge into a remaining portion of the fill metal layer.Type: GrantFiled: March 16, 2010Date of Patent: September 16, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Han-Guan Chew, Ming Zhu, Lee-Wee Teo, Harry Hak-Lay Chuang, Yi-Ren Chen
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Patent number: 8800699Abstract: A drive arrangement for an electric vehicle has an axle drive device of a portal design with two electric machines for driving the wheels of an axle of the electric vehicle, and at least one electric energy store that can be discharged when an electric machine is operated as a motor and/or can be charged when an electric machine is operated as a generator. The drive arranged is characterized in that the two electric machines (11) of the axle drive device (10) are combined with a respectively assigned transmission (12) in an electric axle to drive the individually suspended wheels (2) of the axle by means of, in each case, one articulated shaft flange (13) via a respective articulated shaft. Frequency converters assigned respectively to the two electric machines are combined in a converter unit.Type: GrantFiled: February 1, 2011Date of Patent: August 12, 2014Assignee: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Hartmut Chodura, Guan Chew, Steffen Maurer, Patrik Gisch, Miroslaw Oslislok, Ralf Bauer, Stefan Bobbo
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Patent number: 8776925Abstract: A motor vehicle has an electrical drive machine that is supplied with electrical energy by an electrical energy storage device, and has an underbody region or surface (5). The electrical energy storage device is accessible for maintenance and/or installation work via a maintenance cover (10) in the underbody surface (5) to reduce time required for maintenance and/or installation work.Type: GrantFiled: February 3, 2012Date of Patent: July 15, 2014Assignee: Dr. Ing. h.c. F. Porsche AktiengesellschaftInventors: Stefan Bender, Guan Chew, Steffen Maurer
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Patent number: 8668833Abstract: A method of forming a discrete nanostructured element at one or more predetermined locations on a substrate is presented. The method includes forming a mask member over the substrate. A window is formed in the mask member at each of one or more locations at which it is required to form the nanostructured element thereby to expose a portion of a surface of the substrate. A portion of the substrate exposed by the window at the one or more locations is removed to form one or more recesses in the substrate. The method further includes forming a layer of a nanostructure medium over a surface of the recess and annealing the structure thereby to form the nanostructured element in each of the one or more recesses. The nanostructured element includes a portion of the nanostructure medium and has an external dimension along at least two substantially orthogonal directions of less than substantially 100 nm.Type: GrantFiled: May 21, 2008Date of Patent: March 11, 2014Assignees: GLOBALFOUNDRIES Singapore Pte. Ltd., National University of SingaporeInventors: Han Guan Chew, Fei Zheng, Wee Kiong Choi, Tze Haw Liew
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Patent number: 8664079Abstract: The disclosure relates to integrated circuit fabrication, and more particularly to a method for fabricating a semiconductor device. An exemplary method for fabricating the semiconductor device comprises providing a substrate; forming pad oxide layers over a frontside and a backside of the substrate; forming hardmask layers over the pad oxide layers on the frontside and the backside of the substrate; and thinning the hardmask layer over the pad oxide layer on the frontside of the substrate.Type: GrantFiled: December 12, 2011Date of Patent: March 4, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Han-Guan Chew, Ming Zhu, Lee-Wee Teo, Harry-Hak-Lay Chuang
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Publication number: 20140045328Abstract: A method for fabricating an interconnection structure in a complementary metal-oxide-semiconductor (CMOS) includes forming an opening in a dielectric layer over a substrate and forming a dummy electrode in a first portion of the opening in the dielectric layer. The method further includes filling a second portion of the opening with a second work-function metal layer, wherein a top surface of the second work-function metal layer is below a top surface of the opening and removing the dummy electrode. The method further includes depositing a first work-function metal layer in the first and second portions, whereby the first work-function metal layer is over the second work-function metal layer in the opening and depositing a signal metal layer over the first work-function metal layer in the first and second portions.Type: ApplicationFiled: October 21, 2013Publication date: February 13, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Han-Guan CHEW, Ming ZHU, Lee-Wee TEO, Harry-Hak-Lay CHUANG
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Patent number: 8609484Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a metal gate on the substrate, the metal gate having a first gate resistance, removing a portion of the metal gate thereby forming a trench; and forming a conductive structure within the trench such that a second gate resistance of the conductive structure and remaining portion of the metal gate is lower than the first gate resistance.Type: GrantFiled: November 12, 2009Date of Patent: December 17, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Lee-Wee Tao, Han-Guan Chew, Harry Hak-Lay Chuang, Syun-Ming Jang
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Patent number: D1000347Type: GrantFiled: January 2, 2020Date of Patent: October 3, 2023Inventor: Guan Chew