Abstract: A drive arrangement for an electric vehicle has an axle drive device of a portal design with two electric machines for driving the wheels of an axle of the electric vehicle, and at least one electric energy store that can be discharged when an electric machine is operated as a motor and/or can be charged when an electric machine is operated as a generator. The drive arranged is characterized in that the two electric machines (11) of the axle drive device (10) are combined with a respectively assigned transmission (12) in an electric axle to drive the individually suspended wheels (2) of the axle by means of, in each case, one articulated shaft flange (13) via a respective articulated shaft. Frequency converters assigned respectively to the two electric machines are combined in a converter unit.

Abstract: A vehicle having an electric drive device and an energy storage device which is arranged in a housing is disclosed. The energy storage device is formed from a plurality of cells. The housing includes a plurality of partitioning devices, with the result that at least one partitioning device is positioned between two cells. The housing of the energy storage device is connected both to a cooling air intake duct, having an inlet opening, and to a cooling air outflow duct, having an outlet opening. At least one partitioning device is configured in such a way that a plurality of cooling ducts are formed between the cells, and cooling air can flow through the cooling ducts in order to cool the energy storage device.

Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a metal gate on the substrate, the metal gate having a first gate resistance, removing a portion of the metal gate thereby forming a trench; and forming a conductive structure within the trench such that a second gate resistance of the conductive structure and remaining portion of the metal gate is lower than the first gate resistance.

Abstract: A method for fabricating a semiconductor device is provided. The method comprises selectively forming a first layer over a first and second exposed portions of a substrate. The first and second exposed portions are of different sizes and are located adjacent to a first and second active devices. During the first layer formation, a gas mixture comprising first and second source gases that function as growth components for forming the first layer and a reactant gas that functions as an etching component for controlling selectivity of the first layer growth is provided. The reactant gas is different from the first and second source gases and one of first and second source gases forms the first layer at a faster rate over the first exposed portion as compared to the second exposed portion and the other source gas exhibits an opposite behavior.

Abstract: A semiconductor device that includes a substrate having an active region prepared with a transistor is presented. The semiconductor device includes a stress structure adjacent to the substrate. The stress structure includes a dielectric layer having nanocrystals embedded therein. The nanocrystals induce a first or a second stress on a channel region of the transistor which improves carrier mobility of the transistor.

Abstract: A method of forming a discrete nanostructured element at one or more predetermined locations on a substrate is presented. The method includes forming a mask member over the substrate. A window is formed in the mask member at each of one or more locations at which it is required to form the nanostructured element thereby to expose a portion of a surface of the substrate. A portion of the substrate exposed by the window at the one or more locations is removed to form one or more recesses in the substrate. The method further includes forming a layer of a nanostructure medium over a surface of the recess and annealing the structure thereby to form the nanostructured element in each of the one or more recesses. The nanostructured element includes a portion of the nanostructure medium and has an external dimension along at least two substantially orthogonal directions of less than substantially 100 nm.