Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal bump on the under bump metallurgy feature, and a substrate trace on a substrate, the substrate trace coupled to the metal bump through a solder joint and intermetallic compounds, a ratio of a first cross sectional area of the intermetallic compounds to a second cross sectional area of the solder joint greater than forty percent.

Abstract: The present invention discloses a housing structure having a conductive adhesive antenna and the conductive adhesive antenna thereof, wherein the housing structure having the conductive adhesive antenna comprises a housing and an electrically conductive adhesive. The housing has two units which can be integrated with each other to form a bonding portion. The electrically conductive adhesive is bonded on the bonding portion and has at least one electrical connection end for electrically connecting with a wireless module, thereby the electrically conductive adhesive is also formed as an antenna structure. With the implementation of the present invention, the conductive adhesive antenna can replace a prior antenna.

Abstract: A device package is provided. The device package includes a first die and a second die. A top surface of the first die is offset from a top surface of the second die in a direction that is parallel to a sidewall of the first die. A molding compound extends along sidewalls of the first die and the second die, where at least a portion of a top surface of the molding compound includes an inclined surface. A polymer layer contacts the top surface of the molding compound, the top surface of the first die, and the top surface of the second die. A top surface of the polymer layer is substantially level. A first conductive feature is in the polymer layer, where the first conductive feature is electrically connected to the first die.

Abstract: The present disclosure provides a method for manufacturing a semiconductor package. The method includes (1) determining a die warpage value under a predetermined temperature range; (2) determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value; and (3) joining the die and the substrate under the predetermined temperature range. The top metal includes all metal layers overlying a middle layer, and the bottom metal includes all metal layers underlying the middle layer. The middle layer includes a core or a metal layer.

Abstract: A light emitting device includes an electrode layer, a first metal layer, an organic material layer and a second metal layer stacked sequentially. The first metal layer includes a first metal portion and a second metal portion separated from the first metal portion at a first lateral distance, and the first metal portion and the second metal portion have a first period. The organic material layer includes a first emitting region separating the first metal portion and the second metal portion. The first lateral distance and the first period enable a lateral plasma coupling generated between the first metal portion and the second metal portion, such that light generated by the organic material layer at the first emitting region has a gain in a first waveband, or a peak wavelength of the light generated by the first emitting region shifts to the first waveband.

Abstract: A device package is provided. The device package includes a first die and a second die. A top surface of the first die is offset from a top surface of the second die in a direction that is parallel to a sidewall of the first die. A molding compound extends along sidewalls of the first die and the second die, where at least a portion of a top surface of the molding compound includes an inclined surface. A polymer layer contacts the top surface of the molding compound, the top surface of the first die, and the top surface of the second die. A top surface of the polymer layer is substantially level. A first conductive feature is in the polymer layer, where the first conductive feature is electrically connected to the first die.

Abstract: A light emitting device includes an electrode layer, a first metal layer, an organic material layer and a second metal layer stacked sequentially. The first metal layer includes a first metal portion and a second metal portion separated from the first metal portion at a first lateral distance, and the first metal portion and the second metal portion have a first period. The organic material layer includes a first emitting region separating the first metal portion and the second metal portion. The first lateral distance and the first period enable a lateral plasma coupling generated between the first metal portion and the second metal portion, such that light generated by the organic material layer at the first emitting region has a gain in a first waveband, or a peak wavelength of the light generated by the first emitting region shifts to the first waveband.

Abstract: A light emitting device includes a substrate layer, first and second metal layers sequentially formed on the substrate layer, and an organic material layer formed between the first and second metal layers. The first metal layer has a uniform thickness or has metal portions or further has an open portion exposing a portion of the surface of the substrate layer. The organic material layer includes a hole transport material and an electron transport material in contact with one another. An interaction between the hole transport material and the electron transport material generates exciplexes capable of emitting light having a peak wavelength in a first range, and a coupling is generated between the first and second metal layers. By adjusting the distance between the first and second metal layers or the thickness of the first metal layer, the peak wavelength of the light is shifted to a second range and/or a third range.

Abstract: An analog switch circuit is disclosed. The analog switch circuit includes a MOSFET and a control switch. The MOSFET includes a drain electrode, a source electrode, a gate electrode, and a body electrode. A gate bias is applied on the gate electrode to control whether the MOSFET is ON or OFF. The control switch includes a control terminal, a first terminal, a second terminal, and a third terminal. A control bias relating to the gate bias is applied to the control terminal so that the first terminal is connected to the second terminal when the MOSFET is ON, and the first terminal is connected to the third terminal when the MOSFET is OFF. The second terminal is connected to a first voltage source providing a first bias. The third terminal is connected to a second voltage source providing a second bias different from the first bias.

Abstract: A method for forming a device package includes forming a molding compound around a plurality of dies and laminating a polymer layer over the dies. A top surface of the dies is covered by a film layer while the molding compound is formed, and the polymer layer extends laterally past edge portions of the dies. The method further includes forming a conductive via in the polymer layer, wherein the conductive via is electrically connected to a contact pad at a top surface of one of the dies.

Abstract: A light emitting element is disclosed, including a plurality of pixels, each pixel including a substrate layer, a first metal layer and a second metal layer stacked on the substrate layer, and an organic material layer disposed between the first metal layer and the second metal layer. The organic material layer of each of the pixels emits light having a peak wavelength within a first range. The first metal layer and the second metal layer that are spaced apart from each other by the organic material layer generate a coupling, and the peak wavelength of the light is shifted.

Abstract: A switch and a multiplexer including the same are provided, which are applicable to selectively transmit the high frequency signal from an input terminal to an output terminal therethrough. The switch includes a switch device and a variable resistor. The switch device is connected between the input terminal and the output terminal, and the switch device includes a control terminal and is configured to be switched between ON and OFF according to a switch controlling signal provided to the control terminal. The variable resistor is connected to the control terminal and configured to change to a first resistance while the switch device is ON, and to change to a second resistance while the switch device is OFF according to a resistor controlling signal. The first resistance is higher than the second resistance, and the resistor controlling signal is changed corresponding to the switch controlling signal.

Abstract: A light emitting element is disclosed, including a substrate layer, a first metal layer and a second metal layer stacked sequentially on the substrate layer, and an organic material layer disposed between the first metal layer and the second metal layer. The organic material layer emits light having a wavelength within a first range, and a coupling generated between the first metal portion and the second metal layer shifts the peak wavelength of the light from the first range to a second range.

Abstract: A light emitting element is provided, including a first electrode layer, a second electrode layer, and an organic light emitting layer sandwiched between the first electrode layer and the second electrode layer. The organic light emitting layer is patterned to include a plurality of light emitting blocks with different densities. In an embodiment, the light emitting blocks are divided into a plurality of light emitting block groups that are arranged in an alternate manner. In another embodiment, a light emitting element includes a first electrode layer, a first organic light emitting layer, a charge generating layer, a second organic light emitting layer, and a second electrode layer sequentially stacked on one another. The first and second organic light emitting layer are patterned to form a plurality of first and second light emitting blocks with different densities, respectively. Thus, the light emitting element generates full-color, gray-scale, three-dimensional, or dynamic images.

Abstract: A light emitting element is disclosed, including a substrate layer, a first metal layer and a second metal layer stacked sequentially on the substrate layer, and an organic material layer disposed between the first metal layer and the second metal layer. The first metal layer includes a first metal portion and a second metal portion that cover a surface of the substrate layer, and an opening portion disposed between the first metal portion and the second metal portion and exposes a portion of the surface. The organic material layer emits light having a wavelength within a first range. A first coupling generated between the first metal portion and the second metal layer shifts the light from the first range to a second range. A second coupling generated between the second metal portion and the second metal layer shifts the light from the first range to a third range.

Abstract: An image processing device including an image obtaining circuit, a storage module and an image processing module is provided. The image obtaining circuit is for receiving a first fisheye image and a second fisheye image. The storage module is for storing a fisheye lens information. The image processing module is coupled to the image obtaining circuit and the storage module for generating a first converted image and a second converted image by converting the first and second fisheye images with panoramic coordinate conversion according to the fisheye lens information and stitching the first and second converted images to generate a panoramic image.

Abstract: A package includes a package substrate, which includes a middle layer selected from the group consisting of a core and a middle metal layer, a top metal layer overlying the middle layer, and a bottom metal layer underlying the middle layer. All metal layers overlying the middle layer have a first total metal density that is equal to a sum of all densities of all metal layers over the middle layer. All metal layers underlying the middle layer have a second total metal density that is equal to a sum of all densities of all metal layers under the middle layer. An absolute value of a difference between the first total metal density and the second total metal density is lower than about 0.1.

Abstract: The present disclosure provides a method for manufacturing a semiconductor package. The method includes (1) determining a die warpage value under a predetermined temperature range; (2) determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value; and (3) joining the die and the substrate under the predetermined temperature range. The top metal includes all metal layers overlying a middle layer, and the bottom metal includes all metal layers underlying the middle layer. The middle layer includes a core or a metal layer.

Abstract: A light emitting device includes a substrate, a coupling unit and an organic light emitting unit. The coupling unit includes a first conductive layer, a first light emitting layer and a second conductive layer. The first conductive layer is located on the substrate. The first light emitting layer is located between the first conductive layer and the second conductive layer. The organic light emitting unit is located adjacent to the second conductive layer.

Abstract: A switch and a multiplexer including the same are provided, which are applicable to selectively transmit the high frequency signal from an input terminal to an output terminal therethrough. The switch includes a switch device and a variable resistor. The switch device is connected between the input terminal and the output terminal, and the switch device includes a control terminal and is configured to be switched between ON and OFF according to a switch controlling signal provided to the control terminal. The variable resistor is connected to the control terminal and configured to change to a first resistance while the switch device is ON, and to change to a second resistance while the switch device is OFF according to a resistor controlling signal. The first resistance is higher than the second resistance, and the resistor controlling signal is changed corresponding to the switch controlling signal.