Abstract: A device includes a first pin configured to connect to a first terminal of a resonator, a second pin configured to connect to a second terminal of a resonator, a gain stage having a first terminal electrically connected to the first pin, and a voltage drop circuit. The voltage drop circuit includes a first transistor having an input terminal electrically connected to a second terminal of the gain stage, and a second transistor having an input terminal electrically connected to an output terminal of the first transistor, and an output terminal electrically connected to the second pin.

Abstract: A method of inducing autophagy in a cell is achieved by contacting the cell with graphene oxide (GO) in an amount effective to induce autophagy in the cell, wherein the cell expresses at least one of TLR-4 (Toll-like receptor 4) and TLR-9 (Toll-like receptor 9). Differences between autophagy triggered by GO and other conventional agonists such as rapamycin have been observed. GO may activate autophagy in some cells that may not be triggered by rapamycin. The cell reveals no apparent apoptosis after treatment of the graphene oxide. A method of method of potentiating an antitumor immune response is also herein provided.

Abstract: A light emitting element is provided, including a first electrode layer, a second electrode layer, and an organic light emitting layer sandwiched between the first electrode layer and the second electrode layer. The organic light emitting layer is patterned to include a plurality of light emitting blocks with different densities. In an embodiment, the light emitting blocks are divided into a plurality of light emitting block groups that are arranged in an alternate manner. In another embodiment, a light emitting element includes a first electrode layer, a first organic light emitting layer, a charge generating layer, a second organic light emitting layer, and a second electrode layer sequentially stacked on one another. The first and second organic light emitting layer are patterned to form a plurality of first and second light emitting blocks with different densities, respectively. Thus, the light emitting element generates full-color, gray-scale, three-dimensional, or dynamic images.

Abstract: A method of inducing autophagy in a cell is achieved by contacting the cell with graphene oxide (GO) in an amount effective to induce autophagy in the cell, wherein the cell expresses at least one of TLR-4 (Toll-like receptor 4) and TLR-9 (Toll-like receptor 9). Differences between autophagy triggered by GO and other conventional agonists such as rapamycin have been observed. GO may activate autophagy in some cells that may not be triggered by rapamycin. The cell reveals no apparent apoptosis after treatment of the graphene oxide. A method of activating a Toll-like receptor in a cell is also herein provided.

Abstract: A light emitting device includes a substrate, a coupling unit and an organic light emitting unit. The coupling unit includes a first conductive layer, a first light emitting layer and a second conductive layer. The first conductive layer is located on the substrate. The first light emitting layer is located between the first conductive layer and the second conductive layer. The organic light emitting unit is located adjacent to the second conductive layer.

Abstract: A package includes a package substrate, which includes a middle layer selected from the group consisting of a core and a middle metal layer, a top metal layer overlying the middle layer, and a bottom metal layer underlying the middle layer. All metal layers overlying the middle layer have a first total metal density that is equal to a sum of all densities of all metal layers over the middle layer. All metal layers underlying the middle layer have a second total metal density that is equal to a sum of all densities of all metal layers under the middle layer. An absolute value of a difference between the first total metal density and the second total metal density is lower than about 0.1.

Abstract: A light emitting device is disclosed, including a first electrode layer, a second electrode layer, and an organic light emitting layer sandwiched between the first and second electrode layers. The second electrode layer is patterned to form a plurality of electrode patterns arranged with different densities. The organic light emitting layer is subjected to a color separation process to form a plurality of monochromatic blocks that correspond to the electrode patterns, respectively. The electrode patterns are divided into a plurality of electrode pattern groups arranged in an alternate manner. The electrode pattern groups display a same image, and a same voltage is applied to the electrode pattern groups at a same time. Alternatively, the electrode pattern groups display different images, and a same or different voltages are applied to the electrode pattern groups at different times. As such, the light emitting device generates grayscale, full-color, three-dimensional or dynamic images.

Abstract: A light emitting device is disclosed, including a first electrode layer, an organic light emitting layer disposed on the first electrode layer, and a second electrode layer disposed on the organic light emitting layer. The organic light emitting layer is sandwiched between the first electrode layer and the second electrode layer. The second electrode layer is patterned to form a plurality of electrode patterns arranged with different densities, thereby generating three-dimensional, greyscale or full-color images.

Abstract: A method of inducing autophagy in a cell is achieved by contacting the cell with graphene oxide (GO) in an amount effective to induce autophagy in the cell, wherein the cell expresses at least one of TLR-4 (Toll-like receptor 4) and TLR-9 (Toll-like receptor 9). Differences between autophagy triggered by GO and other conventional agonists such as rapamycin have been observed. GO may activate autophagy in some cells that may not be triggered by rapamycin. The cell reveals no apparent apoptosis after treatment of the graphene oxide. A method of activating a Toll-like receptor in a cell is also herein provided.

Abstract: A method and device for preventing the bridging of adjacent metal traces in a bump-on-trace structure. An embodiment comprises determining the coefficient of thermal expansion (CTE) and process parameters of the package components. The design parameters are then analyzed and the design parameters may be modified based on the CTE and process parameters of the package components.

Abstract: A silicon photodiode with symmetry layout and deep well bias in CMOS technology is provided. The silicon photodiode includes a substrate, a deep well, and a PN diode structure. The deep well is disposed on the substrate, where an extra bias is applied to the deep well. The region surrounded by the deep well forms the main body of the silicon photodiode. The PN diode structure is located in the region surrounded by the deep well, where the silicon photodiode has a symmetry layout. The deep well is adopted when fabricating the silicon photodiode, and the extra bias is applied to the deep well to eliminate the interference and effect of the substrate absorbing light, and further greatly improve speed and bandwidth. Furthermore, the silicon photodiode has a symmetry layout, so that uniform electric field distribution is achieved, and the interference of the substrate noise is also reduced.

Abstract: A method and device for preventing the bridging of adjacent metal traces in a bump-on-trace structure. An embodiment comprises determining the coefficient of thermal expansion (CTE) and process parameters of the package components. The design parameters are then analyzed and the design parameters may be modified based on the CTE and process parameters of the package components.

Abstract: A silicon photodiode with symmetry layout and deep well bias in CMOS technology is provided. The silicon photodiode includes a substrate, a deep well, and a PN diode structure. The deep well is disposed on the substrate, where an extra bias is applied to the deep well. The region surrounded by the deep well forms the main body of the silicon photodiode. The PN diode structure is located in the region surrounded by the deep well, where the silicon photodiode has a symmetry layout. The deep well is adopted when fabricating the silicon photodiode, and the extra bias is applied to the deep well to eliminate the interference and effect of the substrate absorbing light, and further greatly improve speed and bandwidth. Furthermore, the silicon photodiode has a symmetry layout, so that uniform electric field distribution is achieved, and the interference of the substrate noise is also reduced.

Abstract: A heating assembly includes two permanent magnets arranged in a spaced manner to define a path therebetween for passage of a plurality of stainless steel nails, and an inductive coil wound around an extending direction of the path in such a way that the inductive coil has a number of loops arranged along two opposite sides of the permanent magnets. Thus, when the stainless steel nails move through the path, the inductive coil can receive a low-intensity operation current to heat the stainless steel nails to a predetermined temperature.

Abstract: A silicon photo-detection module is disclosed, in which a silicon photodiode detection unit and a parasitical vertical bipolar junction transistor amplification unit can be simultaneously formed by a CMOS process. The silicon photo-detection module has a silicon substrate, a silicon photodiode detection unit comprising a positive portion and a negative portion, and a parasitical vertical bipolar junction transistor amplification unit comprising a collector, a base, and an emitter. The silicon photodiode detection unit and the parasitical vertical bipolar junction transistor amplification unit are formed on the silicon substrate by a CMOS process. Besides, the positive and negative portions of the silicon photodiode detection unit are electrically connected respectively with the base and the collector of the parasitical vertical bipolar junction transistor amplification unit.

Abstract: The present invention provides a method for purifying baculovirus comprising: providing a baculovirus mixture containing a baculovirus and a liquid portion; replacing the liquid portion with a binding buffer by an ultrafiltration system to form a virus buffer; and purifying the baculovirus from the virus buffer using glycoprotein specific affinity chromatography. Therefore, use of the method of the present invention in the purification of baculovirus resulted in an enhanced discovery yield and improved purity of virus.

Abstract: A method for forming a porous material is to mix a porous first basic material with a sacrificial material compatible with the first basic material to let the sacrificial material permeate into the pores of the first basic material to form a first finished product. Subsequently, the first finished product is mixed with a second basic material and heated over the vaporization temperature of the sacrificial material to let the ingredients of the second basic material change and increase viscous force and impossible to enter the pores of the first basic material. Simultaneously, the sacrificial material is heated and vaporized to exhaust out of the pores of the first basic material, disabling the second basic material to permeate into the pores of the first basic material and thus forming a second finished product for reserving the ingredients in the pores of the first basic material.