Abstract: A method for compensating for scatter/reflection effects in particle beam lithography includes the following steps: providing at least one layer of a material that is sensitive to particle beams, using at least one particle beam to write predetermined patterns in a limited area of the material that is sensitive to particle beams, and using at least one particle beam to write at least one frame, which surrounds the limited area, into the material that is sensitive to particle beams so that variations in the background dose within the limited area are less than 30% of the maximum background dose within the limited area. This provides the advantage that a considerably more homogeneous background dose and hence considerably less variation in the CD measure, can be produced within the area that is written to by the particle beam, in a simple and cost-effective manner.

Abstract: A system and process for etching a portion of a chromium layer applied to a substrate is disclosed. The process includes exposing the substrate having the chromium layer to a gas atmosphere containing a halogen compound and an oxygen compound, each of the compounds being selected in such a way that halogen and oxygen radicals are produced, by dissociation induced by electron collisions, at a predetermined rate that is matched to a chromium etching mechanism. An electron beam is directed onto a portion of the substrate that is to be etched.

Abstract: An inner contour of the compensation frame (2) is configured in polygonal fashion in order to receive the substrate (1). With the substrate (1) having been received, the compensation frame (2) encloses the substrate (1) at the outer edge thereof. A partial region (3a) of an upper main area (3) of the compensation frame (2) runs at a given height (h) above the plane of an upper main area (1a) of the substrate (1) when the latter has been received into the compensation frame (2). Moreover, a further partial region (3b) of the upper main area (3) of the compensation frame runs essentially at the same height as the plane of the upper main area (3) of the substrate (1) when the latter has been received into the compensation frame (2).

Abstract: A method for etching phase shift layers of half-tone phase masks includes etching a phase shift layer by using a plasma which is obtained from CH3F and O2. A high cathode power is used for the etching. The method has a very high selectivity between the substrate and the phase shift layer, so that half-tone phase masks with a high imaging quality can be produced.

Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal photomask layer disposed on a silicon-based material in a processing chamber, introducing a processing gas comprising carbon monoxide, a chlorine containing gas, and optionally, an inert gas into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

Abstract: A method and a device for analyzing structures of a photomask are described. In a first method step, at least one trench is created in the photomask, so that at least one lateral limitation of the trench forms a section through the structures to be analyzed. Then, the structures to be analyzed are scanned by scanning beams, which are guided through the trench on its lateral limitation.