Abstract: An apparatus for determining a state of a rechargeable battery or of a battery has a sensor device and an evaluation device. The sensor device brings about an interaction between an optical signal and a part of the rechargeable battery or of the battery, which part indicates optically acquirable information about a state of the rechargeable battery or of the battery, and detects an optical signal caused by the interaction. The sensor device furthermore provides a detection signal having information about the detected optical signal. The evaluation device determines information about a state of the rechargeable battery or of the battery on the basis of the information of the detection signal. Furthermore, the evaluation device provides a state signal having the information about the determined state.

Abstract: According to various embodiments, a sensor arrangement for particle analysis may include: a base electrode configured to generate an electrical field for particle attraction; a support layer disposed over the base electrode; a sensor array disposed over the support layer and including or formed from a plurality of sensor elements, wherein each sensor element of the plurality of sensor elements is configured to generate or modify an electrical signal in response to a particle at least one of adsorbed to and approaching the sensor element; and an electrical contact structure may include or be formed from a plurality of contact lines, wherein each contact line of the plurality of contact lines is electrically connected to a respective sensor element of the plurality of sensor elements, such that each sensor element of the plurality of sensor elements is addressable via the contact structure.

Abstract: In various embodiments, a method of forming a graphene structure is provided. The method may include forming a body including at least one protrusion, and forming a graphene layer at an outer peripheral surface of the at least one protrusion.

Abstract: A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.

Abstract: A semiconductor device includes a drift structure formed in a semiconductor body. The drift structure forms a first pn junction with a body zone of a transistor cell. A gate structure extends from a first surface of the semiconductor body into the drift structure. A heat sink structure extends from the first surface into the drift structure. A thermal conductivity of the heat sink structure is greater than a thermal conductivity of the gate structure and/or a thermal capacity of the heat sink structure is greater than a thermal capacity of the gate structure.

Abstract: According to various embodiments, a method for processing a carrier may include: co-depositing at least one metal from a first source and carbon from a second source over a surface of the carrier to form a first layer; forming a second layer over the first layer, the second layer including a diffusion barrier material, wherein the solubility of carbon in the diffusion barrier material is less than in the at least one metal; and forming a graphene layer at the surface of the carrier from the first layer by a temperature treatment.

Abstract: Temperature sensor devices and corresponding methods are provided. A temperature sensor may include a first layer being essentially non-conductive in a temperature range and a second layer having a varying resistance in the temperature range.

Abstract: In various embodiments, an electronic component is provided. The electronic component may include a dielectric structure; and a two-dimensional material containing structure over the dielectric structure. The dielectric structure is doped with dopants to change the electric characteristic of the two-dimensional material containing structure.

Abstract: According to various embodiments, a method for processing a carrier may include: forming a layer structure over the carrier, the layer structure including a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.

Abstract: A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer.

Abstract: A fluid sensor chip includes an isolator substrate including amorphous carbon, an electrical conductor including graphite and an active material including graphene or carbon nanotubes.

Abstract: A method for forming a semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate. The method further includes forming a silicon carbide layer on the at least one graphene layer.

Abstract: A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.

Abstract: Temperature sensor devices and corresponding methods are provided. A temperature sensor may include a first layer being essentially non-conductive in a temperature range and a second layer having a varying resistance in the temperature range.

Abstract: A MEMS acoustic transducer includes a substrate having a cavity therethrough, and a conductive back plate unit including a plurality of conductive perforated back plate portions which extend over the substrate cavity. A dielectric spacer arranged on the back plate unit between adjacent conductive perforated back plate portions, and one or more graphene membranes are supported by the dielectric spacer and extend over the conductive perforated back plate portions.

Abstract: A photo-acoustic gas sensor includes a light emitter unit having a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and a wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit having a microphone. The light emitter unit is arranged so that the beam of light pulses traverses an area configured to accommodate the gas. The detector unit is arranged so that the microphone can receive a signal oscillating with the repetition frequency.

Abstract: In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

Abstract: According to various embodiments, an electronic device may include: a layer including a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure includes a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric cha

Abstract: In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

Abstract: A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.