Abstract: A semiconductor device includes a transistor including a plurality of transistor cells in a semiconductor body, each transistor cell including a control terminal and first and second load terminals. The semiconductor device further includes a first electrical connection electrically connecting the first load terminals. The semiconductor device further includes a second electrical connection electrically connecting the second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C.

Abstract: A sensor arrangement according to an embodiment includes a substrate, and at least one sensor and a control circuit mounted on the substrate, wherein the at least one sensor and the control circuit are located on the substrate to be mountable inside a battery cell and outside the battery cell, respectively.

Abstract: An electrical or electronic device is disclosed. In some embodiments, an electrical device includes a single-layer graphene part extending in a lateral direction and a multi-layer graphene structure laterally contacting the single-layer graphene part. The electrical or electronic device further includes a graphite part in contact with a surface of the multi-layer graphene structure. In other embodiments, an electrical device includes a graphene part extending in a lateral direction and a graphite part is configured to provide a lateral contact for the graphene part.

Abstract: A fluid sensor chip includes an isolator substrate including amorphous carbon, an electrical conductor including graphite and an active material including graphene or carbon nanotubes.

Abstract: A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.

Abstract: A compound structure including a carrier wafer and at least one semiconductor piece bonded onto the carrier wafer by a bonding material obtained by a ceramic-forming polymer precursor.

Abstract: A sensor arrangement according to an embodiment comprises a transmitter to be arranged inside a battery cell and to transmit a signal based on at least one sensed operational parameter of the battery cell wirelessly.

Abstract: A power semiconductor device includes a wiring structure adjoining at least one side of a semiconductor body and comprising at least one electrically conductive compound. The power semiconductor device further includes a cooling material in the wiring structure. The cooling material is characterized by a change in structure by means of absorption of energy at a temperature TC ranging between 150° C. and 400° C.

Abstract: A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.

Abstract: Embodiments provide a MEMS including a MEMS device and an detector circuit. The MEMS device includes a membrane, wherein a material of the membrane comprises a band gap and a crystal structure with structural elements (unit cells) connected by covalent bonds in two dimensions only. The detector circuit is configured to determine a deformation of the membrane based on a piezoresistive resistance of the material of the membrane.

Abstract: A method of processing semiconductor dies is provided. Each semiconductor die has a first side with one or more terminals, a second side opposite the first side and sidewalls extending between the first and the second sides. The semiconductor dies are processed by placing the semiconductor dies on a support substrate so that the first side of each semiconductor die faces the support substrate and the second side faces away from the support substrate. A coating is applied to the semiconductor dies placed on the support substrate. The coating has a lower reflectivity than the first side of the semiconductor dies. The coating covers the second side and at least a region of the sidewalls nearest the second side of each semiconductor die. The semiconductor dies are removed from the support substrate after applying the coating for further processing as loose dies such as taping.

Abstract: An apparatus for determining a state of a rechargeable battery or of a battery has a sensor device and an evaluation device. The sensor device brings about an interaction between an optical signal and a part of the rechargeable battery or of the battery, which part indicates optically acquirable information about a state of the rechargeable battery or of the battery, and detects an optical signal caused by the interaction. The sensor device furthermore provides a detection signal having information about the detected optical signal. The evaluation device determines information about a state of the rechargeable battery or of the battery on the basis of the information of the detection signal. Furthermore, the evaluation device provides a state signal having the information about the determined state.

Abstract: In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract: In various embodiments, an electronic component is provided. The electronic component may include a dielectric structure; and a two-dimensional material containing structure over the dielectric structure. The dielectric structure is doped with dopants to change the electric characteristic of the two-dimensional material containing structure.

Abstract: A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.

Abstract: A MEMS acoustic transducer includes a substrate having a cavity therethrough, and a conductive back plate unit including a plurality of conductive perforated back plate portions which extend over the substrate cavity. A dielectric spacer arranged on the back plate unit between adjacent conductive perforated back plate portions, and one or more graphene membranes are supported by the dielectric spacer and extend over the conductive perforated back plate portions.

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract: A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. The SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of: a carbide and a silicide formed by reaction of a portion of the SiC-based functional layer with a carbide-and-silicide-forming metal. An amount of the carbide-and-silicide-forming metal, integrated over the thickness of the functional layer, is 10?4 mg/cm2 to 0.1 mg/cm2.

Abstract: A semiconductor device includes a transistor including a plurality of transistor cells in a semiconductor body, each transistor cell including a control terminal and first and second load terminals. The semiconductor device further includes a first electrical connection electrically connecting the first load terminals. The semiconductor device further includes a second electrical connection electrically connecting the second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C.