Abstract: Provided is a developing device configured to develop an electrostatic latent image formed on an image bearing member by feeding a toner to the electrostatic latent image. The developing device includes a developing frame configured to form an inner space in which the toner and a carrier are to be mixed, a developing roller including an outer periphery to which the developer attaches where the developing roller feeds the toner included in the developer to the image bearing member. The developing device includes an agitator installed in the inner space and configured to mix and deliver the toner and the carrier in a direction parallel to an axial direction of the developing roller, and a plurality of concave portions arranged on a bottom surface of the developing frame.

Abstract: A method includes forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends fro

Abstract: A method of forming patterns includes forming a guide pattern and first peripheral patterns on an underlying layer. The guide pattern provides first openings and the first peripheral patterns provide a fifth opening used in alignment of the guide pattern. An alignment status of the guide pattern is verified using the fifth opening. A block copolymer layer is formed to fill the first and fifth openings. The block copolymer layer is annealed to provide a blocking portion sealing the fifth opening and to form first domains in each first opening and a second domain surrounding the first domains formed in each first opening. The first domains are removed to form third openings. The underlying layer is etched using the blocking portion and sidewalls of the second domains as etch barriers to form fourth openings that extend from the third openings to penetrate the underlying layer.

Abstract: Methods of forming patterns includes guide patterns on a neutral layer. A self-assembling block copolymer (BCP) layer on the guide patterns and the neutral layer. By annealing the self-assembling BCP layer, first polymer block domains and second polymer block domains are formed The guide patterns are formed of a developable antireflective material. The neutral layer is formed of a cross-linked polymeric material.

Abstract: A method of forming patterns includes: forming guide patterns on an underlying layer, forming a self-assembling block copolymer (BCP) layer on the guide patterns and the underlying layer, annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains which are alternately and repeatedly arrayed, and selectively removing the first polymer block domains. The guide patterns are formed of a developable antireflective material. In addition, the guide patterns are spaced apart from each other such that a width of each of the guide patterns is less than a distance between the guide patterns.

Abstract: A method of forming patterns includes: forming guide patterns on an underlying layer, forming a self-assembling block copolymer (BCP) layer on the guide patterns and the underlying layer, annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains which are alternately and repeatedly arrayed, and selectively removing the first polymer block domains. The guide patterns are formed of a developable antireflective material. In addition, the guide patterns are spaced apart from each other such that a width of each of the guide patterns is less than a distance between the guide patterns.

Abstract: A method for manufacturing a semiconductor device includes forming an etch-target layer over a semiconductor substrate having a lower structure, forming a first mask pattern over the etch-target layer, forming a spacer material layer with a uniform thickness over the etch-target layer including the first mask pattern, forming a second mask pattern on an indented region of the space material layer, and etching the etch-target layer with the first mask pattern and the second mask pattern as an etch mask to form a fine pattern.

Abstract: A fine pattern structure includes a layer having or including alternating protrusion portions and recess portions, polymer patterns disposed in recess regions formed by the recess portions, brush patterns disposed on top surfaces of the protrusion portions, and a block co-polymer layer including first polymer block patterns formed on the brush patterns and second polymer block patterns formed on the polymer patterns.

Abstract: A fine pattern structure includes a layer having or including alternating protrusion portions and recess portions, polymer patterns disposed in recess regions formed by the recess portions, brush patterns disposed on top surfaces of the protrusion portions, and a block co-polymer layer including first polymer block patterns formed on the brush patterns and second polymer block patterns formed on the polymer patterns.

Abstract: Various embodiments are directed to fine pattern structures, such as fine pattern structures having block co-polymer materials, methods of forming fine pattern structures with block co-polymer materials, and methods of fabricating semiconductor devices including fine pattern structures with block co-polymer materials. According to some embodiments, a method of fabricating a fine pattern structure includes providing a layer of alternating protrusion portions and recess portions, forming polymer patterns in recess regions formed in the recess portions, forming brush patterns on top surfaces of the protrusion portions, forming first polymer block patterns on the brush patterns and second polymer block patterns on the polymer patterns, and removing the second polymer block patterns and the polymer patterns.

Abstract: A nanoscale structure includes an array of pillars over an underlying layer, a separation wall layer including first separation walls formed over sidewalls of the pillars, and a block co-polymer (BCP) layer formed over the separation wall layer and filling gaps between the pillars. The BCP layer is phase-separated to include first domains that provide second separation walls formed over the first separation walls and second domains that are separated from each other by the first domains.

Abstract: Various embodiments are directed to fine pattern structures, such as fine pattern structures having block co-polymer materials, methods of forming fine pattern structures with block co-polymer materials, and methods of fabricating semiconductor devices including fine pattern structures with block co-polymer materials. According to some embodiments, a method of fabricating a fine pattern structure includes providing a layer of alternating protrusion portions and recess portions, forming polymer patterns in recess regions formed in the recess portions, forming brush patterns on top surfaces of the protrusion portions, forming first polymer block patterns on the brush patterns and second polymer block patterns on the polymer patterns, and removing the second polymer block patterns and the polymer patterns.

Abstract: The method includes forming an array of first separation walls on an underlying layer. A block co-polymer (BCP) layer is formed to fill inside regions of the first separation walls and gaps between the first separation walls. The BCP layer is phase-separated to include first domains that provide second separation walls covering inner sidewalls and outer sidewalls of the first separation walls and second domains that are separated from each other by the first domains.

Abstract: The method includes forming an array of first separation walls on an underlying layer. A block co-polymer (BCP) layer is formed to fill inside regions of the first separation walls and gaps between the first separation walls. The BCP layer is phase-separated to include first domains that provide second separation walls covering inner sidewalls and outer sidewalls of the first separation walls and second domains that are separated from each other by the first domains.

Abstract: A method for manufacturing a semiconductor device includes forming an etch-target layer over a semiconductor substrate having a lower structure, forming a first mask pattern over the etch-target layer, forming a spacer material layer with a uniform thickness over the etch-target layer including the first mask pattern, forming a second mask pattern on an indented region of the space material layer, and etching the etch-target layer with the first mask pattern and the second mask pattern as an etch mask to form a fine pattern.

Abstract: An inkjet image forming apparatus includes a main body frame, a medium supplying unit which is coupled to the main body frame and supplying a print medium, an image forming cartridge which is coupled to the main body frame, forms an image on the supplied print medium, and including a nozzle to eject ink, and a wiping assembly which wipes the nozzle. The wiping assembly includes a wiping sheet storage unit in which the wiping sheet is stored as being wound, a transfer shuttle which moves along arrangement of the nozzle by a driving force of a driving source, a pressing member which is provided in the transfer shuttle and presses a region of the wiping sheet against the nozzle to perform wiping using the wiping sheet, and a wiping sheet support unit which is provided in the transfer shuttle and restricts move of the wiping sheet while the nozzle is wiped.

Abstract: A method for manufacturing a semiconductor device includes forming an etch-target layer over a semiconductor substrate having a lower structure, forming a first mask pattern over the etch-target layer, forming a spacer material layer with a uniform thickness over the etch-target layer including the first mask pattern, forming a second mask pattern on an indented region of the space material layer, and etching the etch-target layer with the first mask pattern and the second mask pattern as an etch mask to form a fine pattern.

Abstract: An image-forming apparatus includes a print head unit including a plurality of head chips disposed in a widthwise direction of a supplied printing medium to eject ink to form an image, a wiping unit including a plurality of wiper members disposed in the widthwise direction of the printing medium, and a support member supporting the plurality of wiper members and located below the print head unit to move upwardly and downwardly. The image-forming apparatus also includes an ink discharging unit which accommodates and discharges ink spitted from the print head unit, an elevating driving unit which moves the wiping unit upwardly and downwardly between at least two positions of a first forward position which is a wiping standby position, a second forward position which is a scrapping position, and a retracted position, and a widthwise direction driving unit which reciprocates the wiping unit positioned in the first or second forward positions by the elevating driving unit.

Abstract: A scrapping unit and an image forming apparatus having the same, and cleaning methods thereof to improve a maintenance performance. The scrapping unit cleans a polluted member disposed in an image forming apparatus and stained by a polluting material. The scrapping unit may include an endless belt to circulate between an exposed position where a surface of the endless belt is exposed toward the polluted member, and a non-exposed position where the surface of the endless belt is not exposed with respect to the polluted member, and a belt support frame which includes a belt support surface to support the endless belt so that the endless belt can be unfolded in the exposed position, and a storing space to store the endless belt so that the endless belt can be folded in the non-exposed position.

Abstract: A toner cartridge for use in an image forming apparatus which includes a paper feeding unit, a developing unit, a transfer unit, and a fixing unit is provided. The toner cartridge may include a fresh toner storage to accommodate therein a fresh toner before use, a waste toner storage to accommodate therein a waste toner introduced through a waste toner inlet, and a waste toner moving device to move the waste toner introduced through the waste toner inlet of the waste toner storage away from the waste toner inlet. The waste toner storage may be arranged under the fresh toner storage in a manner in which an upper portion of the waste toner storage may be formed of a bottom of the toner storage.