Abstract: In one aspect, the disclosure relates to two-way shape memory organogels including at least a crosslinked polymer and an organic free phase. In a further aspect, the un-crosslinked polymer or polymer precursor such as, for example, an oligomer, can be crosslinked by a photoinitiator through free-radical polymerization. In one aspect, the polymer can be cis-poly(1,4-butadiene), while the organic free phase can be a plasticizer such as, for example, bis(2-ethylhexyl) phthalate. The two-way shape memory organogels have excellent stability in high vacuum environments and at high temperatures, desirable mechanical properties, and reliable actuation reversibility. Also disclosed are methods of making the organogels and sensors and other devices that include the organogels.

Abstract: The present disclosure discloses a corner protection device for a display screen and a display screen assembly. In the corner protection device, when a locking member slides on a base to be in a locked state, a locking block is inserted into a locking slot, a first protrusion is inserted into a first through hole of a first corner protection plate, and a second protrusion is inserted into a second through hole of a second corner protection plate. The first corner protection plate and the second corner protection plate protrude from a corner of the display screen. When the locking member slides on the base to be in an unlocked state, the first protrusion or the second protrusion drives the locking block to disengage from the locking slot, and the first corner protection plate and the second corner protection plate are received in a corner of the display screen.

Abstract: A Kriging model-based optimal design method and device for a bulk acoustic resonator, and a storage medium are provided. The Kriging model-based optimal design method includes: determining a structure and a material of a resonator, establishing a corresponding MASON model, and performing one-dimensional simulation on the MASON model to obtain a simulation result; determining, based on the simulation result, a design variable for optimizing the resonator, and constructing a Kriging surrogate model; determining an optimization goal, constructing an optimization problem model based on the optimization goal and the Kriging surrogate model, and solving the optimization problem model to obtain an optimal solution; and reducing upper and lower limits of the design variable to improve optimization accuracy.

Abstract: The invention relates to the technical field of wafer processing, and specifically discloses a wafer thinning system and a thinning method. The system includes a first transfer mechanism, a first conveying mechanism and a second transfer mechanism, as well as a rough grinding mechanism, a fine grinding mechanism and a detection mechanism disposed on the first conveying mechanism. The system further includes carrying mechanisms, a second conveying mechanism, and a controller. The controller is configured to control the first conveying mechanism to convey the carrying mechanisms and control the rough grinding mechanism, the fine grinding mechanism and the detection mechanism to sequentially perform rough grinding, fine grinding and thickness detection on the wafers. The system can implement rough grinding, fine grinding and thickness detection for the wafers, thereby implementing continuous thinning of the wafer and increasing the yield of wafer thinning.

Abstract: The present invention relates to a light therapy apparatus, system, and method to deliver light to a body organ, e.g., to directly contact the skin such as a scalp, via one or more light guides in therapeutic dosages from one or more light sources operating in a variety of wavelengths. One or more illumination assemblies may be fixedly coupled to two or more panel assemblies operably coupled to a substructure. The panel assemblies may be acted upon by one or more actuators to move the panel assemblies resulting in conformal contact with the body organ from a first position to a second position. The actuator may comprise a cable coupled to a motor, the cable operably coupled to each panel assembly, so that upon activation of the motor, the panel assemblies each move inwardly in an independent direction with respect to each other to conform to the body organ.

Abstract: A quick application startup method and a related apparatus are provided. The method includes: An electronic device requests an acceleration script of one or more quick applications from an application server. A first operation for a target quick application is detected. In response to the first operation, the electronic device requests an application package of the target quick application from the application server. An acceleration script of the target quick application is included in the acceleration script of the one or more quick applications. In response to the first operation, the electronic device runs the acceleration script of the target quick application to obtain a first URL, and obtains first data based on the first URL. The electronic device may generate and display a first screen of the target quick application based on the first data.

Abstract: An InGaN/GaN multiple quantum well blue light detector- includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove and a mesa, the mesa and the groove of the multiple quantum well layer are provided with a Si3N4 passivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.

Abstract: An epitaxial structure of a nonpolar AlGaN-based deep-ultraviolet (DUV) photoelectric detector and a preparation method thereof are provided. The epitaxial structure of the nonpolar AlGaN-based DUV photoelectric detector includes a nonpolar AlN buffer layer, a nonpolar Al0.15Ga0.85N buffer layer, and a nonpolar Al0.7Ga0.3N epitaxial layer that are sequentially grown on a LaAlO3 substrate. The LaAlO3 substrate takes a (100) plane as an epitaxial plane, and AlN[11-20] as an epitaxial growth direction. With the LaAlO3 substrate, the epitaxial structure reduces dislocations and stresses between the substrate and the epitaxial buffer layer. By designing two AlGaN epitaxial buffer layers with different components, the epitaxial structure reduces a dislocation density and a surface roughness of the nonpolar AlGaN epitaxial layer, further accelerates photoresponse and detectivity of the detector, and enhances overall performance of the nonpolar AlGaN-based DUV photoelectric detector.

Abstract: A floating board-to-board connector includes a male header and a female header. The female header includes a female header body and a plug-in member, the plug-in member is connected with the female header body, and the plug-in member is disposed through the female header body; the male header includes a male header body and a pin, the male header body is provided with a mounting cavity, the pin is connected in the mounting cavity, the mounting cavity is used for mounting the female header body, and the plug-in member is provided with a plug-in hole into which the pin is inserted; and a cavity wall of the mounting cavity is provided with a clamping groove, the female header further includes a clamping member, the clamping member is convexly arranged on the female header body, and the clamping groove is used for mounting the clamping member.

Abstract: Disclosed in the present invention is a non-invasive detection method for screening for a well-developed blastocyst. A DNA methylation profile of a few of trophectoderm cells in a blastocyst is detected, and the average methylation level and the methylation pattern of embryos identified as having a good morphology in Gardner morphological blastocyst grading process are used as the standard for screening for well-developed blastocysts. The nearer the methylation level of the trophectoderm cells of the blastocyst to be tested approaches the methylation level or state of the good embryo, the better the embryo development is and the higher the suitability for being implanted into a maternal subject is. Furthermore, results of methylation sequencing may be analyzed to determine whether a chromosome is abnormal, so as to directly exclude chromosome-abnormal embryos.

Abstract: The present invention provides a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate and a preparation method therefor and belongs to the field of rectifiers. The rectifier comprises a silicon substrate, a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer, a non-doped InGaN layer and a SiNx passivation layer that are stacked in sequence. The rectifier further comprises a mesa isolation groove and a Schottky contact electrode that are arranged at one side. The mesa isolation groove is in contact with the non-doped GaN layer, the non-doped InGaN layer, the SiNx passivation layer and the Schottky contact electrode. The Schottky contact electrode is in contact with the mesa isolation groove and the non-doped GaN layer. The thickness of the two-dimensional AlN layer is only several atomic layers, thus the received stress and polarization intensity are greater than those of the AlGaN layer.

Abstract: Provided is an arc-shaped lock and display screen assembly, the arc-shaped lock comprises a first lock body and a second lock body; the first lock body comprises an angle adjusting component, a disengagement set, a locking set and a locking piece, the angle adjusting component is used for adjusting a splicing angle, the angle adjusting component is internally provided with a cavity for accommodating the disengagement set, the locking set is provided in the disengagement set, and the locking piece is arranged on outer wall of the locking set; the second lock body comprises a lock bar, which is provided with a slot, the disengagement set moves relative to the locking set, so that the locking piece moves toward the lock bar under extrusion force of the disengagement set, and is locked in the slot to realize temporary fixation of the first lock body and the second lock body.

Abstract: Provided are a box frame and an LED display. The box frame comprises a frame border for installing an LED module, the frame border comprises a plurality of connecting seats and a plurality of frames, each connecting seat connects two adjacent frames, the connecting seat and the frame are alternately connected to form a closed structure; and the frame comprises an inner plate, an outer plate, a partition, a first reinforcing structure and a second reinforcing structure, the inner plate and the outer plate are arranged at intervals, the partition is connected between the inner plate and the outer plate, so as to divide space between the inner plate and the outer plate into a first groove and a second groove, the first reinforcing structure is arranged in the first groove and the second reinforcing structure is arranged in the second groove.

Abstract: A photoelectric detector chip and a preparation method and application thereof are provided. The photoelectric detector chip includes a bottom electrode, a first GaN layer, an i-InyGa1-yN functional layer, a second GaN layer, an i-InxGa1-xN functional layer, a third GaN layer, and a top electrode that are stacked sequentially, where 0?x?1, and y>x; the first GaN layer, the second GaN layer, and the third GaN layer are an n-GaN layer, a p-GaN layer, and an n-GaN layer respectively. The photoelectric detector chip is a vertical-structure dual-band chip. Compared with a transverse structure, the vertical structure can reduce carrier transition time, increase the response speed of the detector, and effectively improve the ?3 dB bandwidth of the detector. The dual bands allow the photoelectric detector chip to load voltages in different directions, thus achieving photoelectric detection in different bands.

Abstract: The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded AlyGa1-yN layer, and an undoped N-polar plane AlxGa1-xN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiNz passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector? in the UV solar-blind band.

Abstract: A PECVD apparatus includes a transfer chamber, a load lock, a cleaning chamber, a spin-drying chamber, a deposition chamber, and an unload lock; wherein the load lock, the cleaning chamber, the spin-drying chamber, the deposition chamber, and the unload lock are successively spirally arranged on a side wall of the transfer chamber; and a spiral conveyor device is arranged in the transfer chamber, wherein the spiral conveyor device includes a conveyor rod, a spiral drive mechanism, and a plurality of conveyor assemblies; wherein the conveyor rod is vertically arranged in the transfer chamber, and the plurality of conveyor assemblies are spirally arranged on the conveyor rod, and wherein the spiral drive mechanism is configured to drive the conveyor rod to undergo a spiral ascending or descending movement.

Abstract: A DNA methylation profile of a few of trophectoderm cells in a blastocyst is detected, and the average methylation 5 level and the methylation pattern of embryos identified as having a good morphology in Gardner morphological blastocyst grading process are used as the standard for screening for well-developed blastocysts. The nearer the methylation level of the trophectoderm cells of the blastocyst to be tested approaches the methylation level or state of the good embryo, the better the embryo development is and the higher the 10 suitability for being implanted into a maternal subject is.

Abstract: A chip for visible-light communication (VLC), a preparation method, and an application of the chip includes a substrate, a buffer layer, an intrinsic GaN layer, a first GaN layer, an i-InxGa1-xN functional layer, a second GaN layer, an i-InyGa1-yN functional layer, a third GaN layer, and a top electrode that are stacked sequentially, where 0?x<1 and 0?y?1. Sidewalls of the i-InxGa1-xN functional layer, the second GaN layer, the i-InyGa1-yN functional layer, and the third GaN layer are each provided with a SiO2 isolation layer. A bottom electrode is arranged in an upper portion or on a surface of the first GaN layer, and the SiO2 isolation layer on the sidewall of the i-InxGa1-xN functional layer is located between the bottom electrode and the i-InxGa1-xN functional layer. Based on the structural design and growth process for the chip for VLC, dual-band detection by a high-bandwidth chip can be implemented.

Abstract: A molybdenum diselenide (MoSe2)/InGaN multispectral photoelectric detector includes a substrate, a buffer layer, an InGaN layer and a MoSe2 layer that are arranged sequentially from bottom to top. The MoSe2 layer partially covers the InGaN layer. The photoelectric detector further includes a barrier layer and an electrode layer. The barrier layer is provided on the InGaN layer not covered by the MoSe2 layer and on a part of the MoSe2 layer. The electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe2 layer. A preparation method of the detector is further provided. The detector detects red light and blue light at the same time. While realizing a sensitivity enhanced micro-nano structure on a surface of a detector chip, the detector improves quantum efficiency in blue and red bands, and enhances resonant absorption for the blue light and red light.

Abstract: An illuminated floor tile, includes a rear body, an LED lamp panel disposed on the rear body, and a glass cover provided over the LED lamp panel and secured to the rear body by an adhesive layer. The LED lamp panel includes a plurality of lamp beads fixedly arranged on a PCB board. The rear body includes a plurality of supports extending from a bottom hosing and through an opening of the PCB, such that a top surface of the supports is higher than the lamp beads and supports the glass.