Abstract: In order to overcome the problems that the existing arc-shaped lock has a complex structure and is difficult to accurately adjust angles, the application provides an arc-shaped lock, comprising an angle control mechanism and a locking mechanism; the angle control mechanism comprises a first mounting structure and a first sliding mechanism, a second sliding mechanism and a positioning mechanism, and the first mounting structure is used for installing a display module; the locking mechanism comprises a second mounting structure, and the second mounting structure is used for installing another display module; the first sliding mechanism and the second sliding mechanism telescopically extend out of the first mounting structure and abut against the second mounting structure, the positioning mechanism is used for positioning lengths of the first sliding mechanism and the second sliding mechanism extending out of the first mounting structure; and the first sliding mechanism and second sliding mechanism are positione

Abstract: A cone crusher and an adjustable moving cone assembly thereof are provided. The adjustable moving cone assembly includes a base, an eccentric bushing movably provided inside the base, a main shaft with a lower end movably provided inside the eccentric bushing, and a moving cone body fastened at an upper end of the main shaft. The eccentric bushing rotates to directly or indirectly drive the moving cone body to swing circumferentially. A lifting drive component is provided on the base. An upper end surface of the lifting drive component is provided with a support assembly. A lower end of the moving cone body is supported by rolling or sliding on the support assembly. The lifting drive component is configured to drive the moving cone body and the main shaft connected to the moving cone body to move up and down.

Abstract: A GaN-HEMT device with a sandwich structure and a method for preparing the same are provided. The GaN-HEMT device includes an epitaxial layer and electrodes, wherein the epitaxial layer includes a GaN channel layer (2) and an AlyGa1-y barrier layer (1), and is arranged from top to bottom; the electrodes include a gate electrode (6), a source electrode (7), a drain electrode (5) and a field plate electrode (10), wherein the field plate electrode (10) and the gate electrode (6) are respectively fabricated on an upper surface and a lower surface of the epitaxial layer, and the field plate electrode (10) extends to a region beyond the epitaxial layer and is connected with the gate electrode (6) to form the sandwich structure, and the source electrode (7) and the drain electrode (5) are respectively located at two ends of the epitaxial layer.

Abstract: In order to overcome the problems that the existing arc-shaped lock has a complex structure and is difficult to accurately adjust angles, the application provides an arc-shaped lock, comprising an angle control mechanism and a locking mechanism; the angle control mechanism comprises a first mounting structure and a first sliding mechanism, a second sliding mechanism and a positioning mechanism, and the first mounting structure is used for installing a display module; the locking mechanism comprises a second mounting structure, and the second mounting structure is used for installing another display module; the first sliding mechanism and the second sliding mechanism telescopically extend out of the first mounting structure and abut against the second mounting structure, the positioning mechanism is used for positioning lengths of the first sliding mechanism and the second sliding mechanism extending out of the first mounting structure; and the first sliding mechanism and second sliding mechanism are positione

Abstract: An enhanced GaN high electron mobility transistor (HEMT) radio-frequency device and a manufacturing method thereof are provided. The enhanced GaN HEMT radio-frequency device includes a substrate, a first AlN interposed layer, a GaN buffer layer, a GaN trench layer, a second AlN interposed layer, an AlGaN barrier layer, a p-AlGaN layer, a metal drain electrode, a metal source electrode, and a metal gate electrode. Under an extremely high vacuum degree, metal Mg is doped and diffused to the AlGaN layer to form the p-AlGaN layer, and the metal Mg further forms a p-n junction with the undoped AlGaN layer, thereby depleting a two-dimensional electron gas (2DEG) under the gate. A HfO2 layer covers the metal Mg to prevent oxidation of the metal Mg.

Abstract: Provided is an arc-shaped lock and display screen assembly, the arc-shaped lock comprises a first lock body and a second lock body; the first lock body comprises an angle adjusting component, a disengagement set, a locking set and a locking piece, the angle adjusting component is used for adjusting a splicing angle, the angle adjusting component is internally provided with a cavity for accommodating the disengagement set, the locking set is provided in the disengagement set, and the locking piece is arranged on outer wall of the locking set; the second lock body comprises a lock bar, which is provided with a slot, the disengagement set moves relative to the locking set, so that the locking piece moves toward the lock bar under extrusion force of the disengagement set, and is locked in the slot to realize temporary fixation of the first lock body and the second lock body.

Abstract: A filter package structure includes: a die substrate, a substrate, a solder resist layer, a package layer, and a conductive structure disposed; wherein the solder resist layer is disposed on the substrate, and a plurality of channels are formed in the solder resist layer, each of the channels being provided with a solder; the conductive structure includes a seal wall and a support electrode, the seal wall and one terminal of the support electrode being connected to the substrate via the solder; and the die substrate is provided with a filter, wherein the seal wall is disposed around a periphery of the filter, the die substrate, the substrate and the seal wall enclose to define an enclosed chamber, the support electrode is disposed in the enclosed chamber, and the package layer is disposed on a periphery, far away from the enclosed chamber, of the die substrate.

Abstract: An air spring with adjustable stiffness and a vehicle air suspension system are disclosed, belonging to the technical field of vehicle shock absorption device. The air spring comprises a main body consisting of an upper sealing plate, a lower sealing plate and a main air spring bellow, wherein an air spring bellow for adjustment is arranged in the main body, the air spring bellow for adjustment divides an inner space of the main body into different regions, with a region out of the air spring bellow for adjustment being a first region and a region inside the air spring bellow for adjustment being a second region. The first region and the second region are respectively connected to a high-pressure gas source, and a gas pressure in the first region and in the second region can be individually controlled.

Abstract: The application belongs to the technical field of LED display screens, and particularly relates to an outdoor LED display. The Outdoor LED display comprises a box body, a display module and a plurality of control assemblies; the display module comprises a plurality of sub-modules, and each sub-module is provided with a control assembly; the box body comprises a frame and a panel installed on the frame, and the display module is connected at one end of the frame away from the panel; the panel, the frame, and the display module form an installation space for installing the control assembly. In this application, each sub-module is installed with a corresponding control assembly, and the control assembly can control the corresponding sub-module to display, thereby enhancing the display effect of the outdoor LED display.

Abstract: A shoulder-angle-adjustable friction stir welding head suitable for a fillet joint includes a stirring head body. A front end of the stirring head body is mounted with a movable shoulder, a stirring pin channel is arranged on the movable shoulder, and the stirring pin channel may allow a stirring pin of the stirring head body to pass through. The present disclosure can respond to welding tasks of the fillet joint of different angles and enlarges an application scope of the friction stir welding head in a manner that the front end of the stirring head body is mounted with the movable shoulder, the stirring pin channel is arranged on the movable shoulder, the stirring pin channel is used for allowing the stirring pin of the stirring head body to pass through, and the angle of the movable shoulder is adjusted.

Abstract: Clean version of the Abstract A preparation method for growing a germanium sulfide (GeS2) single-crystal thin film on a SiO2 substrate includes: cleaning a surface of a substrate with acetone, ethanol and deionized water, where the substrate is a Si/SiO2 substrate or a SiO2 glass substrate; photoetching the substrate, spin-coating a photoresist, and performing photoetching and dry etching or wet etching to obtain a groove pattern; depositing a germanium (Ge)-crystal layer in the groove pattern of the substrate to obtain a treated substrate; and putting the treated substrate into a chemical vapor deposition (CVD) device for growth, a growth source being high-purity sulfur (S) powder and high-purity Ge powder, thereby obtaining a GeS2 single-crystal thin film on the SiO2 substrate. The preparation method can grow GeS2 single crystals on the SiO2 substrate. The GeS2 single crystals have a high crystalline quality and a small surface roughness.

Abstract: A frequency-tunable film bulk acoustic resonator and a preparation method therefor are provided. The resonator includes a substrate, an air gap, a sandwiched structure formed by electrodes and piezoelectric layers, and an electrode lead-out layer, wherein the substrate is connected to the sandwiched structure formed by the electrodes and the piezoelectric layers, and a connection face of the substrate and the sandwiched structure formed by the electrodes and the piezoelectric layers is recessed towards inside of the substrate to form the air gap; and the electrode lead-out layer is connected to the sandwiched structure formed by the electrodes and the piezoelectric layers. The sandwiched structure formed by the electrodes and the piezoelectric layers includes a bottom electrode, piezoelectric layers, intermediate electrodes, and a top electrode, wherein the electrodes and the piezoelectric layers are alternately arranged to form the sandwiched structure.

Abstract: A preparation method of a double-T-shaped gate based on double-layer passivation accurate etching includes: sequentially growing two passivation layers on an epitaxial structure, where the two passivation layers include a bottom passivation layer and a top passivation layer; performing a first exposure on the top passivation layer and etching the top passivation layer and the bottom passivation layer in a first exposure region from top to bottom to form a gate root region; performing a second exposure on the top passivation layer and etching the top passivation layer in a second exposure region to form a lower gate cap region; and performing a third exposure on the top passivation layer to form a top gate cap exposure region and performing metal evaporation and removing a photoresist to form a double-T-shaped gate structure in the two passivation layers.

Abstract: The application provides an LED display screen box, comprising a box frame, an LED module and a sheet metal door panel; the LED module comprises a mounting plate, an LED lamp panel and a power box, the LED module is fixed on the front of the box frame by a module side lock; the power box of LED module includes a socket and a protective cover. The LED module can be removed from the front of the box frame, so that the connection stability is ensured and the disassembly can be performed from the front. The LED display screen box can be repaired or changed efficiently and quickly, so the problem that the LED display screen box is difficult to maintain is solved. The protective cover on the power box of LED module can improve the waterproof performance of the power box, its waterproof grade can reach IP65.

Abstract: A UV-curable and recyclable thermoset shape memory polymer is provided. The polymer includes a vitrimer-based monomer and a photoinitiator. The vitrimer-based monomer includes a first unit rendering a high chain stiffness upon polymerization of the monomer, and a second photopolymerizable unit for photopolymerization of the monomer under a UV irradiation. The polymer has high strength, high stiffness, high recovery stress, high energy storage, reasonable recycling efficiency, and is printable using SLA with high resolution.

Abstract: Provided is a locking device, comprising a first lock body and a second lock body; the first lock body comprises an angle rotating disc base (11), an angle rotating disc (12) and a lock plate (13), the angle rotating disc (12) can rotate around its own axis and the angle rotating disc base (11) has a first mounting surface; the second lock body comprises a fixed base (21) and a spring lock (22), the fixed base (21) is provided with a second mounting surface, and a limit surface facing one end face of the angle rotating disc (12); one end face of the angle rotating disc (12) facing the limit surface is provided with a plurality of bevels (121) at intervals along circumferential direction; rotating the angle rotating disc (12) can make the limit surface fit with different bevels (121) to adjust the included angle.

Abstract: Provided is a method for altering properties of tension programmed fibrous shape memory polymer. The method can include applying a protective coating to the tension programmed shape memory polymer, then applying a supportive coating to the tension programmed shape memory polymer to form a coated fiber. The protective coating avoids contact between the shape memory polymer and chemicals used in the supportive coating that can decompensate the shape memory polymer.

Abstract: An InN nanorod epitaxial wafer grown on an aluminum foil substrate (1) sequentially comprises the aluminum foil substrate (1), an amorphous aluminum oxide layer (2), an AlN layer (3) and an InN nanorod layer, (4) from bottom to top. The wafer can be prepared by pretreating the aluminum foil substrate with an oxidized surface and carrying out an in-situ annealing treatment; then, in a molecular beam epitaxial growth process, forming AlN nucleation sites on the annealed aluminum foil substrate, nucleating on the AlN and growing InN nanorods on the AlN, where the substrate temperature is 400-700° C., the pressure of a reaction chamber is 4.0-10.0×10?5 Torr and the beam ratio of V/III is 20-40.