Patents by Inventor Guoqiang Li
Guoqiang Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12225644Abstract: The present application provides a flying firefly lamp linearly distributed, which includes at least one imitated firefly unit and a power cord; the power cord includes a positive power cord and a negative power cord, and the at least one imitated firefly unit is sequentially connected in parallel between the positive power cord and the negative power cord; the imitated firefly unit includes a PCB board (101), the PCB board is provided with an attitude control chip and a plurality of LED lights arranged in an arrangement, after the attitude control chip is energized by the power cord, the attitude control chip controls the plurality of LED lights to flash in sequence according to a preset flying mode.Type: GrantFiled: November 8, 2021Date of Patent: February 11, 2025Assignee: Jiawei Renewable Energy Co., Ltd.Inventors: Liang Li, Guoqiang Chen
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Patent number: 12222994Abstract: A quick application startup method and a related apparatus are provided. The method includes: An electronic device requests an acceleration script of one or more quick applications from an application server. A first operation for a target quick application is detected. In response to the first operation, the electronic device requests an application package of the target quick application from the application server. An acceleration script of the target quick application is included in the acceleration script of the one or more quick applications. In response to the first operation, the electronic device runs the acceleration script of the target quick application to obtain a first URL, and obtains first data based on the first URL. The electronic device may generate and display a first screen of the target quick application based on the first data.Type: GrantFiled: August 29, 2020Date of Patent: February 11, 2025Assignee: HUAWEI TECHNOLOGIES CO., LTD.Inventors: Litao Yu, Yonghui Wu, Fei Sun, Guoqiang Li
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Patent number: 12224618Abstract: This application relates to the field of communications technologies, and discloses a backup power supply control method, to obtain target power supplying duration of a battery, and determine average power consumption of a communication station (101) within a time period corresponding to the target power supplying duration. Further, a state of charge of the battery is obtained, and actual power supplying duration for the battery to supply power to the communication station (101) is determined based on the state of charge of the battery and the average power consumption. Therefore, an operation mode of a communication device in the communication station (101) may be adjusted, to reduce the average power consumption of the communication station (101) within the time period corresponding to the target power supplying duration.Type: GrantFiled: February 21, 2022Date of Patent: February 11, 2025Assignee: HUAWEI TECHNOLOGIES CO., LTD.Inventors: Bing Luo, Liangren Fang, Guoqiang Yao, Yundong Wan, Jinfeng Li
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Patent number: 12218261Abstract: An InGaN/GaN multiple quantum well blue light detector- includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove and a mesa, the mesa and the groove of the multiple quantum well layer are provided with a Si3N4 passivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.Type: GrantFiled: April 29, 2022Date of Patent: February 4, 2025Assignee: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Wenliang Wang, Guoqiang Li, Baiyu Su, Zhengliang Lin, Deqi Kong, Wenjin Mai
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Publication number: 20250039961Abstract: Embodiments of this application provide a multi-device collaboration method, an electronic device, and a related product. The method includes: A first electronic device switches from a first page to a second page, and establishes a first near field communication connection to a first near field device in response to a user's operation on the first page, where on the second page, a device identifier of the first electronic device comes into contact with a device identifier of the first near field device; and the first electronic device switches to a third page, maintains the first near field communication connection to the first near field device, and establishes the first near field communication connection to a second near field device in response to the user's operation on the second page.Type: ApplicationFiled: December 2, 2022Publication date: January 30, 2025Inventors: Jiaojiao Shi, Chuan Qin, Juan Li, Guoqiang Qi
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Patent number: 12212868Abstract: The disclosure provides an LED light identification method, device, electronic apparatus, and storage medium, belonging to the technical field of indoor positioning and navigation. The method includes: obtaining a background frame and a spline frame by a CMOS camera in an LED lighting environment; determining a target quantity of dark stripes in the spline frame by comparing the background frame with the spline frame; determining a target switching frequency corresponding to the target quantity based on a predetermined corresponding relationship and the target quantity. The target switching frequency is used to mark LED lights. By determining the target switching frequency corresponding to the target quantity and determining the target LED lights having the target switching frequency, it can be determined that the current position of the CMOS camera is near the target LED light.Type: GrantFiled: July 29, 2024Date of Patent: January 28, 2025Assignees: Hubei University of Economics, Dachang Technology Development Co., LtdInventors: Wenping Liu, Guoqiang Fu, Yufu Jia, Zhenjiang Liu, Peiqiang Jin, Peiwen Xiong, Sihan Li, Xiao Xie
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Publication number: 20250022973Abstract: An epitaxial structure of a nonpolar AlGaN-based deep-ultraviolet (DUV) photoelectric detector and a preparation method thereof are provided. The epitaxial structure of the nonpolar AlGaN-based DUV photoelectric detector includes a nonpolar AlN buffer layer, a nonpolar Al0.15Ga0.85N buffer layer, and a nonpolar Al0.7Ga0.3N epitaxial layer that are sequentially grown on a LaAlO3 substrate. The LaAlO3 substrate takes a (100) plane as an epitaxial plane, and AlN[11-20] as an epitaxial growth direction. With the LaAlO3 substrate, the epitaxial structure reduces dislocations and stresses between the substrate and the epitaxial buffer layer. By designing two AlGaN epitaxial buffer layers with different components, the epitaxial structure reduces a dislocation density and a surface roughness of the nonpolar AlGaN epitaxial layer, further accelerates photoresponse and detectivity of the detector, and enhances overall performance of the nonpolar AlGaN-based DUV photoelectric detector.Type: ApplicationFiled: September 27, 2022Publication date: January 16, 2025Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Wenliang WANG, Jianhua DUAN, Guoqiang LI
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Publication number: 20250007194Abstract: A floating board-to-board connector includes a male header and a female header. The female header includes a female header body and a plug-in member, the plug-in member is connected with the female header body, and the plug-in member is disposed through the female header body; the male header includes a male header body and a pin, the male header body is provided with a mounting cavity, the pin is connected in the mounting cavity, the mounting cavity is used for mounting the female header body, and the plug-in member is provided with a plug-in hole into which the pin is inserted; and a cavity wall of the mounting cavity is provided with a clamping groove, the female header further includes a clamping member, the clamping member is convexly arranged on the female header body, and the clamping groove is used for mounting the clamping member.Type: ApplicationFiled: August 21, 2024Publication date: January 2, 2025Applicant: SHENZHEN GLOSHINE TECHNOLOGY CO., LTD.Inventors: Xianfeng ZHANG, Yongjun ZHANG, Guoqiang LI, Zhencheng HUANG, Xijian CHEN
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Publication number: 20240401153Abstract: Disclosed in the present invention is a non-invasive detection method for screening for a well-developed blastocyst. A DNA methylation profile of a few of trophectoderm cells in a blastocyst is detected, and the average methylation level and the methylation pattern of embryos identified as having a good morphology in Gardner morphological blastocyst grading process are used as the standard for screening for well-developed blastocysts. The nearer the methylation level of the trophectoderm cells of the blastocyst to be tested approaches the methylation level or state of the good embryo, the better the embryo development is and the higher the suitability for being implanted into a maternal subject is. Furthermore, results of methylation sequencing may be analyzed to determine whether a chromosome is abnormal, so as to directly exclude chromosome-abnormal embryos.Type: ApplicationFiled: July 25, 2024Publication date: December 5, 2024Inventors: Jiang Liu, Jie Qiao, Guoqiang Li, Yang Yu, Yong Fan, Congru Li
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Patent number: 12154990Abstract: The present invention provides a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate and a preparation method therefor and belongs to the field of rectifiers. The rectifier comprises a silicon substrate, a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer, a non-doped InGaN layer and a SiNx passivation layer that are stacked in sequence. The rectifier further comprises a mesa isolation groove and a Schottky contact electrode that are arranged at one side. The mesa isolation groove is in contact with the non-doped GaN layer, the non-doped InGaN layer, the SiNx passivation layer and the Schottky contact electrode. The Schottky contact electrode is in contact with the mesa isolation groove and the non-doped GaN layer. The thickness of the two-dimensional AlN layer is only several atomic layers, thus the received stress and polarization intensity are greater than those of the AlGaN layer.Type: GrantFiled: July 7, 2020Date of Patent: November 26, 2024Assignee: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Wenliang Wang, Guoqiang Li, Yuhui Yang, Deqi Kong, Zhiheng Xing
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Patent number: 12156352Abstract: Provided is an arc-shaped lock and display screen assembly, the arc-shaped lock comprises a first lock body and a second lock body; the first lock body comprises an angle adjusting component, a disengagement set, a locking set and a locking piece, the angle adjusting component is used for adjusting a splicing angle, the angle adjusting component is internally provided with a cavity for accommodating the disengagement set, the locking set is provided in the disengagement set, and the locking piece is arranged on outer wall of the locking set; the second lock body comprises a lock bar, which is provided with a slot, the disengagement set moves relative to the locking set, so that the locking piece moves toward the lock bar under extrusion force of the disengagement set, and is locked in the slot to realize temporary fixation of the first lock body and the second lock body.Type: GrantFiled: May 24, 2022Date of Patent: November 26, 2024Assignee: SHENZHEN GLOSHINE TECHNOLOGY CO., LTD.Inventors: Xianfeng Zhang, Yongjun Zhang, Guoqiang Li, Zhengqiang Li
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Publication number: 20240381554Abstract: Provided are a box frame and an LED display. The box frame comprises a frame border for installing an LED module, the frame border comprises a plurality of connecting seats and a plurality of frames, each connecting seat connects two adjacent frames, the connecting seat and the frame are alternately connected to form a closed structure; and the frame comprises an inner plate, an outer plate, a partition, a first reinforcing structure and a second reinforcing structure, the inner plate and the outer plate are arranged at intervals, the partition is connected between the inner plate and the outer plate, so as to divide space between the inner plate and the outer plate into a first groove and a second groove, the first reinforcing structure is arranged in the first groove and the second reinforcing structure is arranged in the second groove.Type: ApplicationFiled: June 15, 2023Publication date: November 14, 2024Inventors: Xianfeng Zhang, Yongjun Zhang, Guoqiang Li, Zhiqiang Gao, Guangfeng Liu
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Publication number: 20240372020Abstract: A photoelectric detector chip and a preparation method and application thereof are provided. The photoelectric detector chip includes a bottom electrode, a first GaN layer, an i-InyGa1-yN functional layer, a second GaN layer, an i-InxGa1-xN functional layer, a third GaN layer, and a top electrode that are stacked sequentially, where 0?x?1, and y>x; the first GaN layer, the second GaN layer, and the third GaN layer are an n-GaN layer, a p-GaN layer, and an n-GaN layer respectively. The photoelectric detector chip is a vertical-structure dual-band chip. Compared with a transverse structure, the vertical structure can reduce carrier transition time, increase the response speed of the detector, and effectively improve the ?3 dB bandwidth of the detector. The dual bands allow the photoelectric detector chip to load voltages in different directions, thus achieving photoelectric detection in different bands.Type: ApplicationFiled: January 25, 2022Publication date: November 7, 2024Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Guoqiang LI, Jixing CHAI, Wenliang WANG, Liang CHEN
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Publication number: 20240355952Abstract: The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded AlyGa1-yN layer, and an undoped N-polar plane AlxGa1-xN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiNz passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector? in the UV solar-blind band.Type: ApplicationFiled: January 25, 2022Publication date: October 24, 2024Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Wenliang WANG, Linhao LI, Guoqiang LI, Hongsheng JIANG
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Patent number: 12110561Abstract: A DNA methylation profile of a few of trophectoderm cells in a blastocyst is detected, and the average methylation 5 level and the methylation pattern of embryos identified as having a good morphology in Gardner morphological blastocyst grading process are used as the standard for screening for well-developed blastocysts. The nearer the methylation level of the trophectoderm cells of the blastocyst to be tested approaches the methylation level or state of the good embryo, the better the embryo development is and the higher the 10 suitability for being implanted into a maternal subject is.Type: GrantFiled: April 11, 2017Date of Patent: October 8, 2024Assignee: Guangzhou NVWA Life Technology Co., Ltd.Inventors: Jiang Liu, Jie Qiao, Guoqiang Li, Yang Yu, Yong Fan, Congru Li
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Patent number: 12112928Abstract: A PECVD apparatus includes a transfer chamber, a load lock, a cleaning chamber, a spin-drying chamber, a deposition chamber, and an unload lock; wherein the load lock, the cleaning chamber, the spin-drying chamber, the deposition chamber, and the unload lock are successively spirally arranged on a side wall of the transfer chamber; and a spiral conveyor device is arranged in the transfer chamber, wherein the spiral conveyor device includes a conveyor rod, a spiral drive mechanism, and a plurality of conveyor assemblies; wherein the conveyor rod is vertically arranged in the transfer chamber, and the plurality of conveyor assemblies are spirally arranged on the conveyor rod, and wherein the spiral drive mechanism is configured to drive the conveyor rod to undergo a spiral ascending or descending movement.Type: GrantFiled: February 7, 2024Date of Patent: October 8, 2024Assignee: GUANGZHOU AIFO LIGHT COMMUNICATION TECHNOLOGY COMPANY LTDInventors: Guoqiang Li, Xinyan Yi
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Publication number: 20240332443Abstract: A chip for visible-light communication (VLC), a preparation method, and an application of the chip includes a substrate, a buffer layer, an intrinsic GaN layer, a first GaN layer, an i-InxGa1-xN functional layer, a second GaN layer, an i-InyGa1-yN functional layer, a third GaN layer, and a top electrode that are stacked sequentially, where 0?x<1 and 0?y?1. Sidewalls of the i-InxGa1-xN functional layer, the second GaN layer, the i-InyGa1-yN functional layer, and the third GaN layer are each provided with a SiO2 isolation layer. A bottom electrode is arranged in an upper portion or on a surface of the first GaN layer, and the SiO2 isolation layer on the sidewall of the i-InxGa1-xN functional layer is located between the bottom electrode and the i-InxGa1-xN functional layer. Based on the structural design and growth process for the chip for VLC, dual-band detection by a high-bandwidth chip can be implemented.Type: ApplicationFiled: January 25, 2022Publication date: October 3, 2024Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Guoqiang LI, Jixing CHAI, Wenliang WANG, Hao LI
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Publication number: 20240313143Abstract: A molybdenum diselenide (MoSe2)/InGaN multispectral photoelectric detector includes a substrate, a buffer layer, an InGaN layer and a MoSe2 layer that are arranged sequentially from bottom to top. The MoSe2 layer partially covers the InGaN layer. The photoelectric detector further includes a barrier layer and an electrode layer. The barrier layer is provided on the InGaN layer not covered by the MoSe2 layer and on a part of the MoSe2 layer. The electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSe2 layer. A preparation method of the detector is further provided. The detector detects red light and blue light at the same time. While realizing a sensitivity enhanced micro-nano structure on a surface of a detector chip, the detector improves quantum efficiency in blue and red bands, and enhances resonant absorption for the blue light and red light.Type: ApplicationFiled: December 30, 2021Publication date: September 19, 2024Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Guoqiang LI, Deqi KONG, Wenliang WANG, Liang CHEN
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Patent number: 12094374Abstract: An illuminated floor tile, includes a rear body, an LED lamp panel disposed on the rear body, and a glass cover provided over the LED lamp panel and secured to the rear body by an adhesive layer. The LED lamp panel includes a plurality of lamp beads fixedly arranged on a PCB board. The rear body includes a plurality of supports extending from a bottom hosing and through an opening of the PCB, such that a top surface of the supports is higher than the lamp beads and supports the glass.Type: GrantFiled: December 9, 2020Date of Patent: September 17, 2024Assignee: SHENZHEN GLOSHINE TECHNOLOGY CO., LTD.Inventors: Xianfeng Zhang, Yongjun Zhang, Guoqiang Li, Zhiqiang Gao
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Publication number: 20240305268Abstract: A single crystal film bulk acoustic wave resonator includes a substrate layer, a Bragg reflection layer, a first bonding layer, a second bonding layer, a piezoelectric layer and an electrode layer; a width of the electrode layer is smaller than that of the piezoelectric layer. The resonator further includes a first silicon oxide layer and a second silicon oxide layer, which surround the first bonding layer and the second bonding layer respectively, and a plurality of first air holes horizontally arranged and a plurality of second air holes horizontally arranged are respectively formed in the first silicon oxide layer and the second silicon oxide layer. Each of the plurality of first air holes corresponds to and is communicated with a respective one of the plurality of second air holes. The piezoelectric layer is made of AlN or lithium niobate.Type: ApplicationFiled: December 20, 2022Publication date: September 12, 2024Inventor: Guoqiang Li