Patents by Inventor Guoqiang Li
Guoqiang Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240305267Abstract: A bulk acoustic wave resonator capable of improving a power capacity includes a substrate, a first diamond film layer, a piezoelectric layer and a second diamond film layer; a first cavity is formed in the first diamond film layer; a bottom electrode is arranged on the first diamond film layer and located in the piezoelectric layer; a second cavity is formed in the second diamond film layer, and a top electrode is arranged in the second cavity on the piezoelectric layer; a first through hole is formed between the top electrode and the bottom electrode, and the first through hole penetrates through the top electrode and the bottom electrode, and communicates with the first cavity and the second cavity; and a second through hole is further formed in the second diamond film layer, and the second through hole communicates with the second cavity and the outside.Type: ApplicationFiled: December 20, 2022Publication date: September 12, 2024Inventor: Guoqiang Li
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Publication number: 20240305268Abstract: A single crystal film bulk acoustic wave resonator includes a substrate layer, a Bragg reflection layer, a first bonding layer, a second bonding layer, a piezoelectric layer and an electrode layer; a width of the electrode layer is smaller than that of the piezoelectric layer. The resonator further includes a first silicon oxide layer and a second silicon oxide layer, which surround the first bonding layer and the second bonding layer respectively, and a plurality of first air holes horizontally arranged and a plurality of second air holes horizontally arranged are respectively formed in the first silicon oxide layer and the second silicon oxide layer. Each of the plurality of first air holes corresponds to and is communicated with a respective one of the plurality of second air holes. The piezoelectric layer is made of AlN or lithium niobate.Type: ApplicationFiled: December 20, 2022Publication date: September 12, 2024Inventor: Guoqiang Li
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Publication number: 20240289517Abstract: A method for implementing a magnetic confinement reaction is provided. An initial equilibrium configuration is constructed based on zero-dimensional parameters. The initial equilibrium configuration is subjected to iteration with a blanket, a divertor and a magnet to determine an equilibrium configuration of a reference equilibrium. A numerical simulation model of a plasma breakdown phase in a start-up process is established using a rigid conductor, and optimally solved to determine a maximum coil current. A phase after the breakdown is optimized into a quadratic programing problem to establish a performance function, which is solved using a preset constraint to determine a to-be-optimized parameter. The start-up process of the superconducting tokamak is completed according to the equilibrium configuration, the maximum coil current and the to-be-optimized parameter. A device and computer-readable storage medium for implementing magnetic confinement reaction are also provided.Type: ApplicationFiled: April 29, 2024Publication date: August 29, 2024Inventors: Jinping QIAN, Zhengping LUO, Jiale CHEN, Guoqiang LI, Ye TAO, Hang LI, Kun LU
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Patent number: 12074133Abstract: A chip bonding apparatus and a securing assembly therefor are disclosed. The securing assembly includes a securing bracket, a sliding bracket, and a slide. A first open slot is arranged in the securing bracket, wherein the sliding bracket is slidably mounted on the first open slot, a snap-fitting portion is arranged on a side portion of the sliding bracket, and at least one catch slot that is engageable with the snap-fitting portion to secure the sliding bracket is arranged in the securing bracket. A second open slot is arranged in the sliding bracket, wherein a slideway is arranged in each of two side walls of the second open slot, and the slide is inserted into the slideway and hence mounted in the second open slot.Type: GrantFiled: March 6, 2024Date of Patent: August 27, 2024Assignee: GUANGZHOU AIFO LIGHT COMMUNICATION TECHNOLOGY COMPANY LTD.Inventors: Guoqiang Li, Xinyan Yi
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Patent number: 12053785Abstract: A cone crusher and an adjustable moving cone assembly thereof are provided. The adjustable moving cone assembly includes a base, an eccentric bushing movably provided inside the base, a main shaft with a lower end movably provided inside the eccentric bushing, and a moving cone body fastened at an upper end of the main shaft. The eccentric bushing rotates to directly or indirectly drive the moving cone body to swing circumferentially. A lifting drive component is provided on the base. An upper end surface of the lifting drive component is provided with a support assembly. A lower end of the moving cone body is supported by rolling or sliding on the support assembly. The lifting drive component is configured to drive the moving cone body and the main shaft connected to the moving cone body to move up and down.Type: GrantFiled: November 10, 2023Date of Patent: August 6, 2024Assignee: ZHEKUANG HEAVY INDUSTRY CO., LTD.Inventors: Guoqiang Li, Mengjun Zhao, Bingmin Chen, Cheng Yuan, Yucheng Chu, Lihua Chen
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Patent number: 12048103Abstract: In order to overcome the problems that the existing arc-shaped lock has a complex structure and is difficult to accurately adjust angles, the application provides an arc-shaped lock, comprising an angle control mechanism and a locking mechanism; the angle control mechanism comprises a first mounting structure and a first sliding mechanism, a second sliding mechanism and a positioning mechanism, and the first mounting structure is used for installing a display module; the locking mechanism comprises a second mounting structure, and the second mounting structure is used for installing another display module; the first sliding mechanism and the second sliding mechanism telescopically extend out of the first mounting structure and abut against the second mounting structure, the positioning mechanism is used for positioning lengths of the first sliding mechanism and the second sliding mechanism extending out of the first mounting structure; and the first sliding mechanism and second sliding mechanism are positioneType: GrantFiled: May 18, 2022Date of Patent: July 23, 2024Assignee: SHENZHEN GLOSHINE TECHNOLOGY CO., LTD.Inventors: Xianfeng Zhang, Yongjun Zhang, Guoqiang Li, Haijun Zhang
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Publication number: 20240238792Abstract: A cone crusher and an adjustable moving cone assembly thereof are provided. The adjustable moving cone assembly includes a base, an eccentric bushing movably provided inside the base, a main shaft with a lower end movably provided inside the eccentric bushing, and a moving cone body fastened at an upper end of the main shaft. The eccentric bushing rotates to directly or indirectly drive the moving cone body to swing circumferentially. A lifting drive component is provided on the base. An upper end surface of the lifting drive component is provided with a support assembly. A lower end of the moving cone body is supported by rolling or sliding on the support assembly. The lifting drive component is configured to drive the moving cone body and the main shaft connected to the moving cone body to move up and down.Type: ApplicationFiled: November 10, 2023Publication date: July 18, 2024Applicant: ZHEKUANG HEAVY INDUSTRY CO., LTD.Inventors: Guoqiang LI, Mengjun ZHAO, Bingmin CHEN, Cheng YUAN, Yucheng CHU, Lihua CHEN
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Patent number: 12034067Abstract: A GaN-HEMT device with a sandwich structure and a method for preparing the same are provided. The GaN-HEMT device includes an epitaxial layer and electrodes, wherein the epitaxial layer includes a GaN channel layer (2) and an AlyGa1-y barrier layer (1), and is arranged from top to bottom; the electrodes include a gate electrode (6), a source electrode (7), a drain electrode (5) and a field plate electrode (10), wherein the field plate electrode (10) and the gate electrode (6) are respectively fabricated on an upper surface and a lower surface of the epitaxial layer, and the field plate electrode (10) extends to a region beyond the epitaxial layer and is connected with the gate electrode (6) to form the sandwich structure, and the source electrode (7) and the drain electrode (5) are respectively located at two ends of the epitaxial layer.Type: GrantFiled: May 15, 2019Date of Patent: July 9, 2024Assignee: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Guoqiang Li, Dingbo Chen, Zhikun Liu, Lijun Wan
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Publication number: 20240196547Abstract: In order to overcome the problems that the existing arc-shaped lock has a complex structure and is difficult to accurately adjust angles, the application provides an arc-shaped lock, comprising an angle control mechanism and a locking mechanism; the angle control mechanism comprises a first mounting structure and a first sliding mechanism, a second sliding mechanism and a positioning mechanism, and the first mounting structure is used for installing a display module; the locking mechanism comprises a second mounting structure, and the second mounting structure is used for installing another display module; the first sliding mechanism and the second sliding mechanism telescopically extend out of the first mounting structure and abut against the second mounting structure, the positioning mechanism is used for positioning lengths of the first sliding mechanism and the second sliding mechanism extending out of the first mounting structure; and the first sliding mechanism and second sliding mechanism are positioneType: ApplicationFiled: May 18, 2022Publication date: June 13, 2024Inventors: Xianfeng Zhang, Yongjun Zhang, Guoqiang Li, Haijun Zhang
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Publication number: 20240178313Abstract: An enhanced GaN high electron mobility transistor (HEMT) radio-frequency device and a manufacturing method thereof are provided. The enhanced GaN HEMT radio-frequency device includes a substrate, a first AlN interposed layer, a GaN buffer layer, a GaN trench layer, a second AlN interposed layer, an AlGaN barrier layer, a p-AlGaN layer, a metal drain electrode, a metal source electrode, and a metal gate electrode. Under an extremely high vacuum degree, metal Mg is doped and diffused to the AlGaN layer to form the p-AlGaN layer, and the metal Mg further forms a p-n junction with the undoped AlGaN layer, thereby depleting a two-dimensional electron gas (2DEG) under the gate. A HfO2 layer covers the metal Mg to prevent oxidation of the metal Mg.Type: ApplicationFiled: September 23, 2022Publication date: May 30, 2024Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Guoqiang LI, Nengtao WU, Zhiheng XING, Shanjie LI, Fanyi ZENG, Ling LUO
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Publication number: 20240179862Abstract: Provided is an arc-shaped lock and display screen assembly, the arc-shaped lock comprises a first lock body and a second lock body; the first lock body comprises an angle adjusting component, a disengagement set, a locking set and a locking piece, the angle adjusting component is used for adjusting a splicing angle, the angle adjusting component is internally provided with a cavity for accommodating the disengagement set, the locking set is provided in the disengagement set, and the locking piece is arranged on outer wall of the locking set; the second lock body comprises a lock bar, which is provided with a slot, the disengagement set moves relative to the locking set, so that the locking piece moves toward the lock bar under extrusion force of the disengagement set, and is locked in the slot to realize temporary fixation of the first lock body and the second lock body.Type: ApplicationFiled: May 24, 2022Publication date: May 30, 2024Inventors: Xianfeng Zhang, Yongjun Zhang, Guoqiang Li, Zhengqiang Li
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Patent number: 11996379Abstract: A filter package structure includes: a die substrate, a substrate, a solder resist layer, a package layer, and a conductive structure disposed; wherein the solder resist layer is disposed on the substrate, and a plurality of channels are formed in the solder resist layer, each of the channels being provided with a solder; the conductive structure includes a seal wall and a support electrode, the seal wall and one terminal of the support electrode being connected to the substrate via the solder; and the die substrate is provided with a filter, wherein the seal wall is disposed around a periphery of the filter, the die substrate, the substrate and the seal wall enclose to define an enclosed chamber, the support electrode is disposed in the enclosed chamber, and the package layer is disposed on a periphery, far away from the enclosed chamber, of the die substrate.Type: GrantFiled: September 22, 2023Date of Patent: May 28, 2024Assignee: GUANGZHOU AIFO LIGHT COMMUNICATION TECHNOLOGY COMPANY LTD.Inventor: Guoqiang Li
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Publication number: 20240166012Abstract: An air spring with adjustable stiffness and a vehicle air suspension system are disclosed, belonging to the technical field of vehicle shock absorption device. The air spring comprises a main body consisting of an upper sealing plate, a lower sealing plate and a main air spring bellow, wherein an air spring bellow for adjustment is arranged in the main body, the air spring bellow for adjustment divides an inner space of the main body into different regions, with a region out of the air spring bellow for adjustment being a first region and a region inside the air spring bellow for adjustment being a second region. The first region and the second region are respectively connected to a high-pressure gas source, and a gas pressure in the first region and in the second region can be individually controlled.Type: ApplicationFiled: June 27, 2023Publication date: May 23, 2024Inventors: Amir KHAJEPOUR, Yukun Lu, Ruilong Li, Ran Zhen, Yegang Liu, Guoqiang Li
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Patent number: 11958127Abstract: A shoulder-angle-adjustable friction stir welding head suitable for a fillet joint includes a stirring head body. A front end of the stirring head body is mounted with a movable shoulder, a stirring pin channel is arranged on the movable shoulder, and the stirring pin channel may allow a stirring pin of the stirring head body to pass through. The present disclosure can respond to welding tasks of the fillet joint of different angles and enlarges an application scope of the friction stir welding head in a manner that the front end of the stirring head body is mounted with the movable shoulder, the stirring pin channel is arranged on the movable shoulder, the stirring pin channel is used for allowing the stirring pin of the stirring head body to pass through, and the angle of the movable shoulder is adjusted.Type: GrantFiled: September 14, 2023Date of Patent: April 16, 2024Assignee: Hefei University of TechnologyInventors: Beibei Li, Pengcheng He, Jingfeng Wang, Wenqi Qi, Guoqiang Li
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Patent number: 11961427Abstract: The application belongs to the technical field of LED display screens, and particularly relates to an outdoor LED display. The Outdoor LED display comprises a box body, a display module and a plurality of control assemblies; the display module comprises a plurality of sub-modules, and each sub-module is provided with a control assembly; the box body comprises a frame and a panel installed on the frame, and the display module is connected at one end of the frame away from the panel; the panel, the frame, and the display module form an installation space for installing the control assembly. In this application, each sub-module is installed with a corresponding control assembly, and the control assembly can control the corresponding sub-module to display, thereby enhancing the display effect of the outdoor LED display.Type: GrantFiled: April 26, 2021Date of Patent: April 16, 2024Assignee: SHENZHEN GLOSHINE TECHNOLOGY CO., LTD.Inventors: Xianfeng Zhang, Yongjun Zhang, Guoqiang Li, Zhengqiang Li
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Publication number: 20240120431Abstract: Clean version of the Abstract A preparation method for growing a germanium sulfide (GeS2) single-crystal thin film on a SiO2 substrate includes: cleaning a surface of a substrate with acetone, ethanol and deionized water, where the substrate is a Si/SiO2 substrate or a SiO2 glass substrate; photoetching the substrate, spin-coating a photoresist, and performing photoetching and dry etching or wet etching to obtain a groove pattern; depositing a germanium (Ge)-crystal layer in the groove pattern of the substrate to obtain a treated substrate; and putting the treated substrate into a chemical vapor deposition (CVD) device for growth, a growth source being high-purity sulfur (S) powder and high-purity Ge powder, thereby obtaining a GeS2 single-crystal thin film on the SiO2 substrate. The preparation method can grow GeS2 single crystals on the SiO2 substrate. The GeS2 single crystals have a high crystalline quality and a small surface roughness.Type: ApplicationFiled: December 30, 2021Publication date: April 11, 2024Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Guoqiang LI, Sheng CHEN, Wenliang WANG, Jixing CHAI
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Publication number: 20240088869Abstract: A frequency-tunable film bulk acoustic resonator and a preparation method therefor are provided. The resonator includes a substrate, an air gap, a sandwiched structure formed by electrodes and piezoelectric layers, and an electrode lead-out layer, wherein the substrate is connected to the sandwiched structure formed by the electrodes and the piezoelectric layers, and a connection face of the substrate and the sandwiched structure formed by the electrodes and the piezoelectric layers is recessed towards inside of the substrate to form the air gap; and the electrode lead-out layer is connected to the sandwiched structure formed by the electrodes and the piezoelectric layers. The sandwiched structure formed by the electrodes and the piezoelectric layers includes a bottom electrode, piezoelectric layers, intermediate electrodes, and a top electrode, wherein the electrodes and the piezoelectric layers are alternately arranged to form the sandwiched structure.Type: ApplicationFiled: October 31, 2021Publication date: March 14, 2024Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Guoqiang LI, Tielin ZHANG, Hongbin LIU, Xinyan YI, Lishuai ZHAO, Peidong OUYANG
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Publication number: 20230378280Abstract: A preparation method of a double-T-shaped gate based on double-layer passivation accurate etching includes: sequentially growing two passivation layers on an epitaxial structure, where the two passivation layers include a bottom passivation layer and a top passivation layer; performing a first exposure on the top passivation layer and etching the top passivation layer and the bottom passivation layer in a first exposure region from top to bottom to form a gate root region; performing a second exposure on the top passivation layer and etching the top passivation layer in a second exposure region to form a lower gate cap region; and performing a third exposure on the top passivation layer to form a top gate cap exposure region and performing metal evaporation and removing a photoresist to form a double-T-shaped gate structure in the two passivation layers.Type: ApplicationFiled: July 28, 2022Publication date: November 23, 2023Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Wenliang WANG, Shanjie LI, Guoqiang LI, Zhiheng XING, Nengtao WU
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Patent number: D1013932Type: GrantFiled: April 10, 2023Date of Patent: February 6, 2024Inventor: Guoqiang Li
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Patent number: D1031128Type: GrantFiled: January 17, 2024Date of Patent: June 11, 2024Inventor: Guoqiang Li