Patents by Inventor Guy Wicker
Guy Wicker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8431922Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.Type: GrantFiled: May 31, 2012Date of Patent: April 30, 2013Assignee: STMicroelectronics S.r.l.Inventors: Richard Dodge, Guy Wicker
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Patent number: 8379439Abstract: A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.Type: GrantFiled: December 17, 2009Date of Patent: February 19, 2013Assignee: Ovonyx, Inc.Inventors: Tyler Lowrey, Ward Parkinson, Guy Wicker
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Patent number: 8344348Abstract: An electrical device includes a first electrode and a second electrode. A first active material is between the first electrode and second electrode. A second active material is between the first electrode and second electrode. A nonlinear electrode material is disposed between the first electrode and the second electrode. The nonlinear electrode material is electrically in series with the first electrode, the first active material, the second active material, and the second electrode. The first electrode and the first active material undergo no chemical or electrochemical reaction when current passes between the first electrode and the second electrode.Type: GrantFiled: October 2, 2008Date of Patent: January 1, 2013Assignee: Ovonyx, Inc.Inventors: Guy Wicker, Wolodymyr Czubatyj
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Publication number: 20120241704Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.Type: ApplicationFiled: May 31, 2012Publication date: September 27, 2012Applicant: STMicroelectronics S.r.l.Inventors: Richard Dodge, Guy Wicker
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Patent number: 8217379Abstract: A variable resistance material for memory applications. The material includes a base Ge—Sb—Te composition and further includes As-doping. The materials were included in variable resistance memory devices. Incorporation of As in the variable resistance composition led to a significant increase in the operational life of the device and, unexpectedly, did not reduce the programming speed of the device. In one embodiment, the composition includes at atomic concentration of Ge in the range from 7%-13%, an atomic concentration of Sb in the range from 50%-70%, an atomic concentration of Te in the range from 20%-30%, and an atomic concentration of As in the range from 2%-15%.Type: GrantFiled: July 20, 2009Date of Patent: July 10, 2012Assignee: Ovonyx, Inc.Inventors: Carl Schell, Guy Wicker, Jon Maimon
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Patent number: 8211742Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.Type: GrantFiled: September 15, 2010Date of Patent: July 3, 2012Assignee: STMicroelectronics S.r.l.Inventors: Richard Dodge, Guy Wicker
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Patent number: 8134860Abstract: By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may be sufficiently resistive that it heats the phase change material and causes the appropriate phase transitions without requiring a dielectric breakdown of the phase change material.Type: GrantFiled: December 16, 2010Date of Patent: March 13, 2012Assignee: Intel CorporationInventor: Guy Wicker
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Patent number: 8120940Abstract: A minimal-duration current pulse is employed to program a programmable resistance memory to a high-resistance, RESET state. Although the duration and magnitude of RESET programming pulses in accordance with the principles of the present invention may vary depending, for example, upon the composition and structure of a cell, a method and apparatus in accordance with the principles of the present invention employs the briefest pulse practicable for a given cell or array of cells.Type: GrantFiled: November 6, 2008Date of Patent: February 21, 2012Assignee: Ovonyx, Inc.Inventor: Guy Wicker
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Publication number: 20110085376Abstract: By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may be sufficiently resistive that it heats the phase change material and causes the appropriate phase transitions without requiring a dielectric breakdown of the phase change material.Type: ApplicationFiled: December 16, 2010Publication date: April 14, 2011Inventor: Guy Wicker
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Patent number: 7916514Abstract: By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may be sufficiently resistive that it heats the phase change material and causes the appropriate phase transitions without requiring a dielectric breakdown of the phase change material.Type: GrantFiled: June 4, 2007Date of Patent: March 29, 2011Assignee: Intel CorporationInventor: Guy Wicker
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Publication number: 20110012080Abstract: A variable resistance material for memory applications. The material includes a base Ge—Sb—Te composition and further includes As-doping. The materials were included in variable resistance memory devices. Incorporation of As in the variable resistance composition led to a significant increase in the operational life of the device and, unexpectedly, did not reduce the programming speed of the device. In one embodiment, the composition includes at atomic concentration of Ge in the range from 7%-13%, an atomic concentration of Sb in the range from 50%-70%, an atomic concentration of Te in the range from 20%-30%, and an atomic concentration of As in the range from 2%-15%.Type: ApplicationFiled: July 20, 2009Publication date: January 20, 2011Inventors: Carl Schell, Guy Wicker, Jon Maimon
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Publication number: 20110003454Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.Type: ApplicationFiled: September 15, 2010Publication date: January 6, 2011Applicant: STMicroelectronics S.r.l.Inventors: Richard Dodge, Guy Wicker
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Publication number: 20100321991Abstract: A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated.Type: ApplicationFiled: August 31, 2010Publication date: December 23, 2010Inventors: Sergey A. Kostylev, Tyler Lowrey, Guy Wicker, Wolodymyr Czubatyj
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Patent number: 7839674Abstract: A chalcogenide material is proposed for programming the cross-connect transistor coupling interconnect lines of an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer in series with the select device or a phase change material. The matrix array may be used in a programmable logic device.Type: GrantFiled: October 2, 2008Date of Patent: November 23, 2010Assignee: Ovonyx, Inc.Inventors: Tyler Lowrey, Ward Parkinson, Guy Wicker
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Patent number: 7816660Abstract: A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.Type: GrantFiled: April 6, 2006Date of Patent: October 19, 2010Assignee: STMicroelectronics S.r.l.Inventors: Richard Dodge, Guy Wicker
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Patent number: 7786462Abstract: A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated.Type: GrantFiled: October 19, 2007Date of Patent: August 31, 2010Assignee: Ovonyx, Inc.Inventors: Sergey A. Kostylev, Tyler Lowrey, Guy Wicker, Wolodymyr Czubatyj
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Publication number: 20100110780Abstract: A minimal-duration current pulse is employed to program a programmable resistance memory to a high-resistance, RESET state. Although the duration and magnitude of RESET programming pulses in accordance with the principles of the present invention may vary depending, for example, upon the composition and structure of a cell, a method and apparatus in accordance with the principles of the present invention employs the briefest pulse practicable for a given cell or array of cells.Type: ApplicationFiled: November 6, 2008Publication date: May 6, 2010Inventor: Guy Wicker
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Publication number: 20100091561Abstract: A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.Type: ApplicationFiled: December 17, 2009Publication date: April 15, 2010Inventors: Tyler Lowrey, Ward Parkinson, Guy Wicker
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Publication number: 20100084625Abstract: An electrical device includes a first electrode and a second electrode. A first active material is between the first electrode and second electrode. A second active material is between the first electrode and second electrode. A nonlinear electrode material is disposed between the first electrode and the second electrode. The nonlinear electrode material is electrically in series with the first electrode, the first active material, the second active material, and the second electrode. The first electrode and the first active material undergo no chemical or electrochemical reaction when current passes between the first electrode and the second electrode.Type: ApplicationFiled: October 2, 2008Publication date: April 8, 2010Inventors: Guy Wicker, Wolodymyr Czubatyj
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Patent number: 7646630Abstract: A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.Type: GrantFiled: August 22, 2005Date of Patent: January 12, 2010Assignee: Ovonyx, Inc.Inventors: Tyler Lowrey, Ward Parkinson, Guy Wicker