Patents by Inventor Gyu-hwan An

Gyu-hwan An has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110193048
    Abstract: Provided is a non-volatile memory device including a bottom electrode disposed on a substrate and having a lower part and an upper part. A conductive spacer is disposed on a sidewall of the lower part of the bottom electrode. A nitride spacer is disposed on a top surface of the conductive spacer and a sidewall of the upper part of the bottom electrode. A resistance changeable element is disposed on the upper part of the bottom electrode and the nitride spacer. The upper part of the bottom electrode contains nitrogen (N).
    Type: Application
    Filed: April 14, 2011
    Publication date: August 11, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gyu-Hwan Oh, Sug-Woo Jung, Dong-Hyun Im
  • Publication number: 20110155985
    Abstract: A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a high aspect ratio structure, and the second phase change material layer pattern may fully fill the high aspect ratio structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
    Type: Application
    Filed: December 28, 2010
    Publication date: June 30, 2011
    Inventors: Jin-Ho Oh, Jeong-Hee Park, Man-Sug Kang, Byoung-Deog Choi, Gyu-Hwan Oh, Hye-Young Park, Doo-Hwan Park
  • Patent number: 7836709
    Abstract: A refrigerator for monitoring the status of another space by means of a display device mounted to the refrigerator, a monitoring system having the refrigerator and a control method thereof. The refrigerator includes a body which is formed with a storage chamber, a door for opening and closing the storage chamber, and a display device which is mounted to a front side of the door, the display device having a receiving part for receiving a monitoring image signal from a predetermined outside signal supply source, an image signal processing part for processing the received monitoring image signal, a display part for displaying the monitoring image signal and a control part for controlling the image signal processing part so that the received monitoring image signal is displayed on the display part.
    Type: Grant
    Filed: September 13, 2006
    Date of Patent: November 23, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gyu-hwan An, Gi-hyeong Lee, Kyoung-whan Kim
  • Patent number: 7812332
    Abstract: A phase change memory device includes a current restrictive element interposed between an electrically conductive element and a phase change material. The current restrictive element includes a plurality of overlapping film patterns, each of which having a respective first portion proximal to the conductive element and a second portion proximal to the phase change material. The second portions are configured and dimensioned to have higher resistance than the first portions.
    Type: Grant
    Filed: June 27, 2007
    Date of Patent: October 12, 2010
    Assignee: Samsung Electronics Co. Ltd.
    Inventors: Gyu-Hwan Oh, In-Sun Park, Hyun-Seok Lim, Ki-Jong Lee, Nak-Hyun Lim
  • Publication number: 20100243982
    Abstract: Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.
    Type: Application
    Filed: June 8, 2010
    Publication date: September 30, 2010
    Inventors: Gyu-Hwan Oh, Shin-Jae Kang, In-Sun Park, Hyun-Seok Lim, Nak-Hyun Lim, Hyun-Suk Lee
  • Patent number: 7776226
    Abstract: A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a clean room by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: August 17, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Sang Kim, Gyu-Chan Jeoung, Gyu-hwan Kwag
  • Publication number: 20100190321
    Abstract: Provided is a method of fabricating a phase-change memory device. The phase-change memory device includes a memory cell having a switching device and a phase change pattern. The method includes; forming a TiC layer on a contact electrically connecting the switching device using a plasma enhanced cyclic chemical vapor deposition (PE-cyclic CVD) process, patterning the TiC layer to form a lower electrode on the contact, and forming the phase-change pattern on the lower electrode.
    Type: Application
    Filed: November 23, 2009
    Publication date: July 29, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Gyu-Hwan OH, Young-Lim PARK, Soon-Oh PARK, Jin-Il LEE, Chang-Su KIM
  • Patent number: 7759159
    Abstract: Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.
    Type: Grant
    Filed: August 31, 2007
    Date of Patent: July 20, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gyu-Hwan Oh, Shin-Jae Kang, In-Sun Park, Hyun-Seok Lim, Nak-Hyun Lim, Hyun-Suk Lee
  • Publication number: 20100144138
    Abstract: Provided are methods of forming contact structures and semiconductor devices fabricated using the contact structures. The formation of a contact structure can include forming a first molding pattern on a substrate, forming an insulating layer to cover at least a sidewall of the first molding pattern, forming a second molding pattern to cover a sidewall of the insulating layer and spaced apart from the first molding pattern, removing a portion of the insulating layer between the first and second molding patterns to form a hole, and forming an insulating pattern between the first and second molding patterns, and forming a contact pattern in the hole.
    Type: Application
    Filed: November 30, 2009
    Publication date: June 10, 2010
    Inventors: Young-Lim Park, Hyeong-Geun An, Gyu-Hwan Oh, Dong-Ho Ahn, Jin-Il Lee
  • Publication number: 20100120849
    Abstract: The present invention relates to a pharmaceutical composition for preventing or treating hyperproliferative vascular disorders, and a pharmaceutical anticancer composition comprising the compound represented by the Formula 1. The present compounds exhibit IC50 values of less than 0.16 ?M for vascular smooth muscle cells and cancer cells to effectively prevent proliferation of vascular smooth muscle cells and cancer cells, thereby ensuring prevention or treatment of hyperproliferative vascular disorders such as arteriosclerosis and restenosis, and cancers.
    Type: Application
    Filed: May 23, 2007
    Publication date: May 13, 2010
    Applicant: Biobud Co., Ltd
    Inventors: Kwang Hoe Chung, Chwang Siek Pak, Sung Yu Hong, Soo Jung Kang, Young Doug Sohn, Jae Hoon Hwang, Eun Bok Choi, Gyu Hwan Yon, Hyeon Kyu Lee, Heui Cheol Yang
  • Publication number: 20100093130
    Abstract: Provided is a method of forming a semiconductor memory cell in which in order to store two bits or more data in a memory cell, three or more bottom electrode contacts (BECs) and phase-change materials (GST) have a parallel structure on a single contact plug (CP) and set resistances are changed depending on thicknesses (S), lengths (L) or resistivities (?) of the three or more bottom electrode contacts, so that a reset resistance and three different set resistances enable data other than in set and reset states to be stored. Also, a method of forming a memory cell in which three or more phase-change materials (GST) have a parallel structure on a single bottom electrode contact, and the phase-change materials have different set resistances depending on composition ratio or type, so that four or more different resistances can be implemented is provided.
    Type: Application
    Filed: October 13, 2009
    Publication date: April 15, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Gyu-Hwan Oh, Hyeong-Geun An, Soon-Oh Park, Dong-Ho Ahn, Young-Lim Park
  • Publication number: 20090291558
    Abstract: A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a clean room by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.
    Type: Application
    Filed: July 30, 2009
    Publication date: November 26, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-sang KIM, Gyu-chan JEOUNG, Gyu-hwan KWAG
  • Publication number: 20090203211
    Abstract: A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a clean room by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.
    Type: Application
    Filed: April 17, 2009
    Publication date: August 13, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-sang KIM, Gyu-chan JEOUNG, Gyu-hwan KWAG
  • Publication number: 20090008623
    Abstract: Methods of fabricating a nonvolatile memory device using a resistance material and a nonvolatile memory device are provided. According to example embodiments, a method of fabricating a nonvolatile memory device may include forming at least one semiconductor pattern on a substrate, forming a metal layer on the at least one semiconductor pattern, forming a mixed-phase metal silicide layer, in which at least two phases coexist, by performing at least one heat treatment on the substrate so that the at least one semiconductor pattern may react with the metal layer, and exposing the substrate to an etching gas.
    Type: Application
    Filed: June 27, 2008
    Publication date: January 8, 2009
    Inventors: Hyun-Seok Lim, In-Sun Park, Gyu-Hwan Oh, Do-Hyung Kim, Shin-Jae Kang
  • Publication number: 20080308784
    Abstract: Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.
    Type: Application
    Filed: August 31, 2007
    Publication date: December 18, 2008
    Inventors: Gyu-Hwan Oh, Shin-Jae Kang, In-Sun Park, Hyun-Seok Lim, Nak-Hyun Lim, Hyun-Suk Lee
  • Publication number: 20080230373
    Abstract: The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided.
    Type: Application
    Filed: March 19, 2008
    Publication date: September 25, 2008
    Inventors: Do-Hyung Kim, Shin-Jae Kang, In-Sun Park, Hyun-Seok Lim, Gyu-Hwan Oh
  • Publication number: 20080190127
    Abstract: A refrigerator includes a main body cabinet having a storage room formed with a front opening, a door which opens and closes the front opening, and a display unit that is mounted on at least one of the main body cabinet and the door. The display unit includes a display displaying an image, a power supply unit selectively supplying power to the display, a temperature detector detecting a temperature of the display, and a controller controlling the power supply unit to interrupt the power supplied to the display when the temperature detected by the temperature detector is higher than a predetermined maximum temperature.
    Type: Application
    Filed: July 27, 2007
    Publication date: August 14, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yong-ik Cho, Gi-hyeong Lee, Gyu-hwan An, Kyoung-hwan Kim
  • Publication number: 20080194106
    Abstract: In a method of forming a titanium aluminum nitride layer, a first reactant is formed on a substrate by reacting a first source including titanium and a second source including nitrogen. A second reactant is formed by providing a third source including aluminum onto the substrate having the first reactant thereon and reacting the third source with the first reactant. A third reactant is formed by providing a fourth source including nitrogen onto the substrate having the second reactant thereon and reacting the fourth source with the second reactant. The titanium aluminum nitride layer having a good step coverage is formed on the substrate. Processes of forming the titanium aluminum nitride layer are simplified and deposition rate is improved. Therefore, a phase-change memory device using the titanium aluminum nitride layer as a lower electrode may have an improved throughput.
    Type: Application
    Filed: February 13, 2008
    Publication date: August 14, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gyu-Hwan OH, In-Sun PARK, Hyun-Seok LIM, Nak-Hyun LIM
  • Publication number: 20080116437
    Abstract: A phase change memory device includes a current restrictive element interposed between an electrically conductive element and a phase change material. The current restrictive element includes a plurality of overlapping film patterns, each of which having a respective first portion proximal to the conductive element and a second portion proximal to the phase change material. The second portions are configured and dimensioned to have higher resistance than the first portions.
    Type: Application
    Filed: June 27, 2007
    Publication date: May 22, 2008
    Inventors: Gyu-Hwan Oh, In-Sun Park, Hyun-Seok Lim, Ki-Jong Lee, Nak-Hyun Lim
  • Patent number: 7324169
    Abstract: Provided are a projection optical system, a projection television, and a method of manufacturing a lens included in the projection optical system. The projection optical system includes lenses for projecting color beams onto a screen. A color filter layer, absorbing at least one of the color beams, is coated on the surface of at least one of the lenses.
    Type: Grant
    Filed: July 1, 2004
    Date of Patent: January 29, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seok-il Yoon, Sung-gi Kim, Gyu-hwan Hwang, Young-Il Kah