Abstract: A semiconductor device includes an active region having a sidewall, which has a sidewall step, a junction formed under a surface of the sidewall step, and a buried bit line configured to contact the junction.

Abstract: A method for fabricating a semiconductor device includes forming a multilayer, forming a plurality of patterns by etching the multilayer and a portion of the substrate, forming a supporter to support the plurality of patterns, and removing residues formed during the etching.

Abstract: Disclosed herein is a method for forming a dual gate of a semiconductor device. The method comprises the steps of forming a first polysilicon layer doped with p-type impurity ions and a second polysilicon layer doped with n-type impurity ions on a first region and a second region of a semiconductor substrate, respectively, and sequentially subjecting the surfaces of the first and second polysilicon layers to wet cleaning, drying, and dry cleaning. The wet cleaning is performed by using a sulfuric acid peroxide mixture (SPM), a buffered oxide etchant (BOE), and Standard Clean-1 (SC-1) as cleaning solutions.

Abstract: Disclosed herein is a method for forming a dual gate of a semiconductor device. The method comprises the steps of forming a first polysilicon layer doped with p-type impurity ions and a second polysilicon layer doped with n-type impurity ions on a first region and a second region of a semiconductor substrate, respectively, and sequentially subjecting the surfaces of the first and second polysilicon layers to wet cleaning, drying, and dry cleaning. The wet cleaning is performed by using a sulfuric acid peroxide mixture (SPM), a buffered oxide etchant (BOE), and Standard Clean-1 (SC-1) as cleaning solutions.

Abstract: A method for forming a capacitor of a semiconductor device includes the steps of forming first and second sacrificial insulation layers over a semiconductor substrate divided into first and second regions. The second and first sacrificial insulation layers in the first region are etched to define in the first region of the semiconductor substrate. Storage nodes on surfaces of the holes are formed. A partial thickness of the second sacrificial insulation layer is etched to partially expose upper portions of the storage nodes. A mask pattern is formed to cover the first region while exposing the second sacrificial insulation layer remaining in the second region. The exposed second sacrificial insulation layer in the second region is removed to expose the first sacrificial insulation layer in the second region. The exposed first sacrificial insulation layer in the second region and the first sacrificial insulation layer in the first region is removed. The mask pattern is removed.

Abstract: A metal line in a semiconductor device includes an insulation layer having trenches formed therein, a barrier metal layer formed over the insulation layer and the trenches, a metal layer formed over the barrier metal layer, wherein the metal layer fills the trenches, and an anti-galvanic corrosion layer formed on an interface between the metal layer and the barrier metal layer.

Abstract: A metal line in a semiconductor device includes an insulation layer having trenches formed therein, a barrier metal layer formed over the insulation layer and the trenches, a metal layer formed over the barrier metal layer, wherein the metal layer fills the trenches, and an anti-galvanic corrosion layer formed on an interface between the metal layer and the barrier metal layer.

Abstract: A capacitor is formed by forming a mold insulating layer with a plurality of storage node holes over a semiconductor substrate. A metal storage node is formed on the surface of each of the storage node holes in the mold insulating layer. The mold insulating layer is removed by performing the following steps: loading the semiconductor substrate with the storage node in the chamber for in-situ cleaning, rinsing, and drying processes; removing the mold insulating layer by an etchant in the chamber; then rinsing the semiconductor substrate by introducing deionized water into the chamber while discharging the etchant out of the chamber; finally rinsing the rinsed semiconductor substrate with a mixed solution of the deionized water and organic solvent; drying the finally rinsed semiconductor substrate by IPA vapor in the chamber while discharging the mixed solution of the deionized water and organic solvent out of the chamber.

Abstract: The chemical mechanical polishing of a semiconductor device includes polishing a target layer to be polished through a chemical reaction by slurry and a mechanical process by a polishing pad. Then performing a post cleaning composed of cleaning, rinsing and drying of the surface of the polished target layer. The parts for cleaning, rinsing and drying procedures are arranged in a row and the post cleaning is performed in a scan manner using a bar type module. Provided at the cleaning and rinsing parts, a solution supplying nozzle and a retrieving nozzle disposed at both sides of the solution supplying nozzle. Finally, removing the solution supplied to the target layer to be polished immediately after the solution comes in contact with the target layer.

Abstract: A method for forming a capacitor of a semiconductor device includes the steps of forming first and second sacrificial insulation layers over a semiconductor substrate divided into first and second regions. The second and first sacrificial insulation layers in the first region are etched to define in the first region of the semiconductor substrate. Storage nodes on surfaces of the holes are formed. A partial thickness of the second sacrificial insulation layer is etched to partially expose upper portions of the storage nodes. A mask pattern is formed to cover the first region while exposing the second sacrificial insulation layer remaining in the second region. The exposed second sacrificial insulation layer in the second region is removed to expose the first sacrificial insulation layer in the second region. The exposed first sacrificial insulation layer in the second region and the first sacrificial insulation layer in the first region is removed. The mask pattern is removed.

Abstract: Provided is a multi-threshold complementary metal oxide semiconductor (MTCMOS) latch circuit including: a data inverting circuit for inverting and outputting input data under the control of a sleep control signal; a transmission gate for transferring the data signal output from the data inverting circuit under the control of a clock control signal; a signal control circuit for outputting the data signal output from the transmission gate under the control of a reset control signal and the sleep control signal; and a feedback circuit for feeding back the signal output from the signal control circuit and preserving the data in a sleep mode. The MTCMOS latch circuit can minimize power consumption caused by a leakage current due to elements scaled down to nano scale and also contribute to high-speed operation of a logic circuit by using an element having a low threshold voltage.

Abstract: A digital-to-analog converter (DAC) for a sigma-delta modulator is provided. The DAC has a switched capacitor structure using an operational amplifier (OP amp) and performs a function exceeding 3-level using a switching method employing only one capacitor in single ended form. Thus, DAC non-linearity caused by capacitor mismatching does not occur, and the number of output levels of the DAC is increased. Also, the DAC capacitor may be applied to a general DAC to increase the ratio of DAC output levels to capacitors.

Abstract: A capacitor is formed by forming a mold insulating layer with a plurality of storage node holes over a semiconductor substrate. A metal storage node is formed on the surface of each of the storage node holes in the mold insulating layer. The mold insulating layer is removed by performing the following steps: loading the semiconductor substrate with the storage node in the chamber for in-situ cleaning, rinsing, and drying processes; removing the mold insulating layer by an etchant in the chamber; then rinsing the semiconductor substrate by introducing deionized water into the chamber while discharging the etchant out of the chamber; finally rinsing the rinsed semiconductor substrate with a mixed solution of the deionized water and organic solvent; drying the finally rinsed semiconductor substrate by IPA vapor in the chamber while discharging the mixed solution of the deionized water and organic solvent out of the chamber.

Abstract: A metal line in a semiconductor device includes an insulation layer having trenches formed therein, a barrier metal layer formed over the insulation layer and the trenches, a metal layer formed over the barrier metal layer, wherein the metal layer fills the trenches, and an anti-galvanic corrosion layer formed on an interface between the metal layer and the barrier metal layer.

Abstract: A cylinder type storage node is made by, inter alia: forming a sacrificial oxide layer containing organic material over a semiconductor substrate; defining holes for storage nodes by etching the sacrificial oxide layer; forming storage nodes on surfaces of the holes; and removing the sacrificial oxide layer through wet etching and removing the organic material contained in the sacrificial oxide layer using ozone gas.

Abstract: A chemical mechanical polishing slurry, contains an abrasive dispersed in deionized water and an organic viscosity modifier added to adjust the viscosity of the slurry to within a range of 0.5 to 3.2 cps.

Abstract: Disclosed herein is a method for forming a dual gate of a semiconductor device. The method comprises the steps of forming a first polysilicon layer doped with p-type impurity ions and a second polysilicon layer doped with n-type impurity ions on a first region and a second region of a semiconductor substrate, respectively, and sequentially subjecting the surfaces of the first and second polysilicon layers to first wet cleaning, second wet cleaning and dry cleaning.

Abstract: Provided is a pixel driving circuit including a threshold voltage compensation circuit. The pixel driving circuit includes a diode-connected type first transistor through which input current data flows; a second transistor copying the current data flowing through the first transistor; a third transistor connected in series to the second transistor; a fourth transistor diode-connected between a power supply voltage terminal and the third transistor; and a driving transistor connected to the power supply voltage terminal, copying the current data flowing through the third transistor, and providing the data to a light emitting diode. Since the pixel driving circuit compensates for variation in the threshold voltage of the driving transistor driving each pixel, brightness uniformity of pixels according to applied current data can be maintained.

Abstract: Provided is a multi-threshold complementary metal oxide semiconductor (MTCMOS) latch circuit including: a data inverting circuit for inverting and outputting input data under the control of a sleep control signal; a transmission gate for transferring the data signal output from the data inverting circuit under the control of a clock control signal; a signal control circuit for outputting the data signal output from the transmission gate under the control of a reset control signal and the sleep control signal; and a feedback circuit for feeding back the signal output from the signal control circuit and preserving the data in a sleep mode. The MTCMOS latch circuit can minimize power consumption caused by a leakage current due to elements scaled down to nano scale and also contribute to high-speed operation of a logic circuit by using an element having a low threshold voltage.

Abstract: A digital-to-analog converter (DAC) for a sigma-delta modulator is provided. The DAC has a switched capacitor structure using an operational amplifier (OP amp) and performs a function exceeding 3-level using a switching method employing only one capacitor in single ended form. Thus, DAC non-linearity caused by capacitor mismatching does not occur, and the number of output levels of the DAC is increased. Also, the DAC capacitor may be applied to a general DAC to increase the ratio of DAC output levels to capacitors.