Abstract: The invention includes methods of forming trench isolation regions. In one implementation, a masking material is formed over a semiconductor substrate. The masking material comprises at least one of tungsten, titanium nitride and amorphous carbon. An opening is formed through the masking material and into the semiconductor substrate effective to form an isolation trench within semiconductive material of the semiconductor substrate. A trench isolation material is formed within the isolation trench and over the masking material outside of the trench effective to overfill the isolation trench. The trench isolation material is polished at least to an outermost surface of the at least one of tungsten, titanium nitride and amorphous carbon of the masking material. The at least one of tungsten, titanium nitride and amorphous carbon is/are etched from the substrate. Other implementations and aspects are contemplated.

Abstract: The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.

Abstract: The present technique relates to a method and apparatus to provide a dielectric etch stop layer that prevents shorts for a buried digit layer as an interconnect. In a memory device, such as DRAM or SRAM, various layers are deposited to form structures, such as PMOS gates, NMOS gates, memory cells, P+ active areas, and N+ active areas. These structures are fabricated through the use of multiple masking processes, which may cause shorts when a buried digit layer is deposited if the masking processes are misaligned. Accordingly, a dielectric etch stop layer, such as aluminum oxide Al2O3 or silicon carbide SiC, may be utilized in the array to prevent shorts between the wordlines, active areas, and the buried digit layer when the contacts are misaligned.

Abstract: The invention includes methods of forming trench isolation regions. In one implementation, a masking material is formed over a semiconductor substrate. The masking material comprises at least one of tungsten, titanium nitride and amorphous carbon. An opening is formed through the masking material and into the semiconductor substrate effective to form an isolation trench within semiconductive material of the semiconductor substrate. A trench isolation material is formed within the isolation trench and over the masking material outside of the trench effective to overfill the isolation trench. The trench isolation material is polished at least to an outermost surface of the at least one of tungsten, titanium nitride and amorphous carbon of the masking material. The at least one of tungsten, titanium nitride and amorphous carbon is/are etched from the substrate. Other implementations and aspects are contemplated.

Abstract: In one aspect, a semiconductor device includes an array of memory cells. Individual memory cells of the array include a capacitor having first and second electrodes, a dielectric layer disposed between the first and second electrodes. Select individual capacitors are energized so as to blow the dielectric layer to establish a connection between the first and second electrodes such that, after blowing the dielectric layer, the second electrode is coupled to a cell plate generator establishing a bias connection therebetween. Cell plate bias connection methods are also described.

Abstract: The invention includes semiconductor structures having buried silicide-containing bitlines. Vertical surround gate transistor structures can be formed over the bitlines. The surround gate transistor structures can be incorporated into memory devices, such as, for example, DRAM devices. The invention can be utilized for forming 4F2 DRAM devices.

Abstract: A method of fabricating integrated circuitry comprises forming a conductive line having opposing sidewalls over a semiconductor substrate. An insulating layer is then deposited The insulating layer is etched proximate the line along at least a portion of at least one sidewall of the line. An insulating spacer forming layer is then deposited over the substrate and the line. It is anisotropically etched to form an insulating sidewall spacer. A method of forming a local interconnect comprises forming at least two transistor gates over a semiconductor substrate. A local interconnect layer is deposited to overlie at least one of the transistor gates and interconnect at least one source/drain region of one of the gates with semiconductor substrate material proximate another of the transistor gates.

Abstract: The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.

Abstract: A light instrumentation system for measuring optical power or intensity of an input as wavelength of the input varies with respect to a time includes a reference providing a detectable optical power or intensity upon encountering a wavelength having a prescribed value, and a detector system coordinated with the reference and providing a detectable feature for measuring the optical power or intensity. A method of testing an object using electromagnetic energy includes illuminating the object using electromagnetic energy while sweeping the electromagnetic energy over a range of wavelengths, measuring electromagnetic energy from the object in response to the illuminating, and coordinating the measuring step with one or more distinct wavelength points of the sweep determined by a wavelength dependent transmission device to which the electromagnetic energy is directed.

Abstract: A light instrumentation system for measuring optical power or intensity of an input as wavelength of the input varies with respect to a time includes a reference providing a detectable optical power or intensity upon encountering a wavelength having a prescribed value, and a detector system coordinated with the reference and providing a detectable feature for measuring the optical power or intensity.

Abstract: A readily attached and detached covering for large surface areas. To use the wall covering, the hook members of a hook and loop fastener system are attached to the surface to be covered. One side of the covering material is such that it can serve as a loop member for the hook member. The covering material can be secured in place and removed repeatedly without the need of special tools or precautions. The cover material is a composite having a hook member engaging layer on one side, a resilient layer and a dimensionally stable layer so that the material in place over a surface is dimensionally stable in the plane of the surface and resiliently accommodating in the direction perpendicular to the surface.

Abstract: A fabric which can be made by a wet-laid process using crimpable bicomponent fibers is disclosed which may have a high bulk and/or elasticity. The fabric can be made by a high speed continuous process wherein the fabric is pulled from a Yankee dryer by a take off roll which rotates faster than the Yankee dryer.

Abstract: A flat, cloth-like composite laminate including airlaid, nonwoven pulp web layers reinforced by a wetlaid bicomponent web layer. The bicomponent web layer has a sheath-core configuration, wherein the fiber component of the sheath member has a lower melting point than the fiber component of the core member. If desired, an adhesive material can be utilized between the bicomponent layer and the airlaid pulp web layer.

Abstract: A method for the production of a fibrous web having textile length fibers wherein a fiber furnish is formed by dispersion of the fibers in an unfoamed carrier medium of water and an associative thickener of ethylene oxide base urethane block copolymers or hydroxyethylcellulose ethers having a C.sub.10 to C.sub.24 alkyl side chain in an amount within the range of from about 1 to about 150 pounds of thickener per ton of dry fiber and including an anionic viscosity modifier in the range of 10 to 500 ppm. The furnish having a consistency in the range of 0.05 to 0.2 weight percent fibers is supplied to a high speed papermaking machine for forming a fibrous web. The textile length fibers may be polyester fibers being 1.5 denier and 3/4 inches. The high speed papermaking machine may be a twin-wire papermaking machine or a suction breast roll papermaking machine or a crescent former papermaking machine.

Abstract: A hydroentangled nonwoven fabric containing ribbon shaped staple synthetic fibers having a crenulated cross-section and formed from a wet-laid web containing such crenulated fibers, preferably a blend thereof with short natural fibers, such as wood fibers. The use of a wet-laid web containing such crenulated synthetic fibers enables optimal interaction with the hydroentanglement jets of water, and a reduced level of hydroentanglement energy is required to achieve the desired performance characteristics in the fabric.

Abstract: A wetlaid paper-like nonwoven structure having a permanent crepe which does not wash out. The paper-like structure contains a synthetic bicomponent fiber in an amount of less than 20% by weight and as such possesses both wet and dry strength and improved absorbent properties.

Abstract: A fibrous web having an enhanced capacity for water absorption is produced by impregnating an absorbent fabric with a polymer or copolymer capable of forming by cross-linking an absorbent polymer or copolymer and subsequently heating the treated fabric effecting cross-linking of the polymer to form an absorbent polymer. The product may comprise a non-woven fibrous web or mat having a water-insoluble binder on one surface and a cross-linked hydrophilic polymer or copolymer on its opposite surface.

Abstract: A flannelized film and a method of making a flannelized film are disclosed. Layers of plastic film are fed between two rollers meeting at a nip, the contiguous surfaces of the layers being coated with an adhesive or comprising a heat-softened coextruded layer. A layer of creped tissue comprising cellulosic fibers is laminated between the contiguous surfaces of the layers of plastic film to form an intermediate laminate structure. The cellulosic fibers of the intermediate laminate structure are split at the exit side of the nip such that a portion of the cellulosic fibers is adhered to each plastic layer and has components extending in a direction substantially perpendicular with respect to the plane of the plastic film. This gives the plastic film the look and feel of flannel for improving the aesthetics of disposable absorbent products such as diapers, feminine napkins and underpads.

Abstract: This invention provides automatic testing systems and methods for testing for figural responses to a test inquiry. The testing system includes a test sheet of predetermined dimensions having a grid with a plurality of marking areas arranged in predetermined position and a figural arrangement having a first optical reflectivity arranged within the grid corresponding to one or more of the marking areas. The system includes indicia of a second optical reflectivity overmarking a selected number of the marking areas associated with the figural arrangement and optical scanning means having different optical sensitivities to the first and second optical reflectivities for scanning the sheet to determine the positions of the overmarked areas.

Abstract: A method for forming a fabric web by wet-laying fibers on paper-making equipment, the web comprising staple length natural or synthetic fibers and optionally wood cellulose papermaking fibers and an adsorbed polymeric surface active agent. The method comprises making up an aqueous fiber furnish with a polymeric surfactant having a plurality of both hydrophilic and hydrophobic groupings per molecule. The polymeric surfactant is adsorbed by the fibers and may be added to the fibers or it may be included in the aqueous carrier medium. In either case, the finished web contains and is improved by the inclusion of the polymeric surfactant.