Abstract: Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.

Abstract: Provided is a field effect transistor including a drain region, a source region, and a channel region. The field effect transistor may further include a gate electrode on or surrounding at least a portion of the channel region, and a gate dielectric layer between the channel region and the gate electrode. A portion of the channel region adjacent the source region has a sectional area smaller than that of another portion of the channel region adjacent the drain region.

Abstract: Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.

Abstract: Provided is a system for sampling and pretreating biological fluid. It comprises: a piercing unit having at a lower portion a capillary tip which is to be inserted into skin to a predetermined depth to take biological fluid therethrough; a dropper, connected to an upper portion of the piercing unit, having an injection tube at an upper portion thereof, the injection tube communicating with the capillary tip; and a reagent container, designed to accommodate the piercing unit therein in an airtight manner so as to seal an outer circumference of the piercing unit, functioning to contain a reagent for treating the biological fluid of the capillary tip of the piercing unit. The system allows even a novice to sample and pretreat biological fluid with high accuracy without the use of expensive precision devices. The system employs fewer expendable supplies, thus providing higher convenience for the user.

Abstract: A three-stage GaN HEMT Doherty power amplifier for high frequency applications includes: a carrier amplifier; first and second peaking amplifier; a 10-dB power divider configured to divide an input signal to the carrier amplifier and the first and second peaking amplifiers; a first path for controlling input power of the carrier amplifier; and a second path for maintaining an efficiency of 40% or more in an output range of 40 dBm to 50 dBm.

Abstract: Methods for fabricating a semiconductor device are provided. In the methods, first material layers and second material layers may be alternatingly and repeatedly stacked on a substrate. An opening penetrating the first material layers and the second material layers may be formed. A semiconductor solution may be formed in the opening by using a spin-on process.

Abstract: There are provided a shock absorber control apparatus and a shock absorber control method, capable of controlling a shock absorber in advance by including a distance sensing module sensing a distance between a bottom surface of a vehicle and a road surface. The shock absorber control apparatus includes: a vehicle movement information sensing module sensing vehicle movement information; a distance sensing module sensing a distance between a bottom surface of a vehicle and a road surface; and an electronic control unit receiving the vehicle movement information and the distance to generate a signal for controlling the shock absorber and transmit the signal to the shock absorber.

Abstract: Disclosed is a 3-way Doherty power amplifier using a driving amplifier in which driving amplifiers are connected to the front stages of a carrier amplifier and a peaking amplifier, respectively, so as to obtain a high gain and a high efficiency. To this end, the Doherty power amplifier includes: a hybrid power distributor for distributing an input signal into first and second path units; and a driving amplifier for receiving a signal outputted from the hybrid power distributor and controlling the driving of a carrier amplifier, a first peaking amplifier, and a second peaking amplifier, wherein: the carrier amplifier, the first peaking amplifier, and the second peaking amplifier are connected to a rear stage of the driving amplifier, respectively; the first path unit generates a high efficiency at a low input power; and the second path unit maintains a high efficiency and gain in a high output range.

Abstract: A method including loading a blank reticle; projecting an electron beam; moving a second aperture plate having a first and second pattern aperture so the first pattern aperture is overlapped by a first aperture of a first aperture plate, the electron beam passing through the first pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam that passes the first pattern aperture to form a first exposure pattern; moving the second aperture plate so the second pattern aperture is overlapped by the first aperture of the first aperture plate, the electron beam passing through the second pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after passing the second pattern aperture, to form a second exposure pattern; and developing the blank reticle having the first and second exposure patterns to form the reticle having first and second patterns.

Abstract: Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.

Abstract: In a method of forming a reticle and electron beam exposure system, first electron beams are irradiated onto a first region of a blank reticle having a light shielding layer and a photosensitive layer, to form first shot patterns. Second electron beams having a cross-sectional area larger than the first electron beams are irradiated onto a second region of the blank reticle. The photosensitive layer is developed to form first and second mask patterns at the first and second regions, respectively. The light shielding layer is etched off using the first and second mask patterns as an etching mask, thereby forming the mother pattern including a first pattern in the first region and a second pattern in the second region. Accordingly, the enlargement of the second electron beams reduces the scan time for the blank reticle, thereby reducing the process time.

Abstract: Provided is a distributed Doherty power amplifier exhibiting high efficiency and linearity at a wide range of bandwidths, the distributed Doherty power amplifier including a first amplifier; a second amplifier, which is connected to the first amplifier in parallel; a first shifting unit, which is interconnected between the input of the first amplifier and the input of the second amplifier and inverses the phase of the input of the second amplifier; and a second shifting unit, which is interconnected between the output of the first amplifier and the output of the second amplifier and inverses the phase of the output of the second amplifier, wherein the first amplifier and the second amplifier are Doherty power amplifiers, and each of the Doherty power amplifiers includes a carrier amplifier and a peaking amplifier, which are connected in parallel.

Abstract: A three dimensional semiconductor memory device includes an electrode structure having a plurality of conductive electrode patterns and insulating patterns alternatingly stacked on a substrate. Opposite sidewalls of the electrode structure include respective grooves therein extending in a direction substantially perpendicular to the substrate. First and second active patterns protrude from the substrate and extend within the grooves in the opposite sidewalls of the electrode structure, respectively. Respective data storing layers extend in the grooves between the conductive electrode patterns of the electrode structure and sidewalls of the first and second active patterns adjacent thereto. Related fabrication methods are also discussed.

Abstract: A three-stage GaN HEMT Doherty power amplifier for high frequency applications includes: a carrier amplifier; first and second peaking amplifier; a 10-dB power divider configured to divide an input signal to the carrier amplifier and the first and second peaking amplifiers; a first path for controlling input power of the carrier amplifier; and a second path for maintaining an efficiency of 40% or more in an output range of 40 dBm to 50 dBm.

Abstract: A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.

Abstract: A refrigerator, the temperature of the inside of which is uniformly controlled, and a control method thereof. The direction of an air flow in a storage chamber is periodically changed so as to uniformly distribute cool air in the storage chamber by interchanging roles of suction and discharge holes in various manners under various conditions, thereby preventing local supercooling and thus uniformly maintaining the internal temperature of the storage chamber.

Abstract: A refrigerator includes a main body, a storage compartment provided in the main body and including a storage space, a partition plate to divide the storage space, and a storage container supported by the partition plate. The storage container includes a container body defining the external appearance of the storage container and having a top opening, a thickness reinforced portion formed at the lower part of the container body to prevent temperature of the lower part of the container body from rapidly changing by cold air of the storage compartment, and a thermal insulating member provided in a space between the thickness reinforced portion and the container body.

Abstract: An example embodiment relates to a patterning process including forming a photoresist pattern on a structure. The photoresist pattern includes a cross-linked surface that is insoluble in an organic solvent. The process also includes spin-on coating a dielectric layer on the photoresist pattern, partially removing the dielectric layer to form a plurality of dielectric spacers surrounding the photoresist pattern, and removing the photoresist pattern.

Abstract: Provided are methods of forming a phase change memory device. A semiconductor device having a lower electrode and an interlayer insulating layer may be prepared. The lower electrode may be surrounded by the interlayer insulating layer. Source gases, a reaction gas and a purge gas may be injected into a process chamber of a semiconductor fabrication device to form a phase change material layer on a semiconductor substrate. The source gases may be simultaneously injected into the process chamber. The phase change material layer may be in contact with the lower electrode through the interlayer insulating layer. The phase change material layer may be etched to form a phase change memory cell in the interlayer insulating layer. An upper electrode may be formed on the phase change memory cell.

Abstract: Disclosed is a 3-way Doherty power amplifier using a driving amplifier in which driving amplifiers are connected to the front stages of a carrier amplifier and a peaking amplifier, respectively, so as to obtain a high gain and a high efficiency. To this end, the Doherty power amplifier includes: a hybrid power distributor for distributing an input signal into first and second path units; and a driving amplifier for receiving a signal outputted from the hybrid power distributor and controlling the driving of a carrier amplifier, a first peaking amplifier, and a second peaking amplifier, wherein: the carrier amplifier, the first peaking amplifier, and the second peaking amplifier are connected to a rear stage of the driving amplifier, respectively; the first path unit generates a high efficiency at a low input power; and the second path unit maintains a high efficiency and gain in a high output range.