Abstract: Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.

Abstract: A semiconductor package includes a substrate in which a plurality of wires are formed; at least one semiconductor chip electrically connected to portions of the plurality of wires; and a shielding can mounted on the substrate, surrounding the at least one semiconductor chip, electrically connected to at least one wire of the plurality of wires and including a soft magnetic material. The semiconductor package can prevent or substantially reduce electromagnetic interference (EMI).

Abstract: Disclosed herein are a washing machine that detects the weight of laundry based on the displacement of a rotary tub and a control method thereof. The washing machine includes a rotary tub displaced according to the weight of laundry, at least one sensor module to detect the displacement of the rotary tub, and a controller to calculate the weight of the laundry according to the displacement of the rotary tub. The weight of the laundry is sensed according to the displacement of the rotary tub in which the laundry is directly placed.

Abstract: A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.

Abstract: Disclosed herein are a washing machine that amplifies the displacement of a tub according to input of laundry such that the displacement of the tub is accurately sensed by a sensor module and a laundry amount detection apparatus thereof. The washing machine includes a housing forming an external appearance thereof, a tub provided in the housing to contain water, an amplification unit to amplify displacement of the tub, and a sensor module to sense weight of laundry using the amplified displacement of the tub.

Abstract: Methods for fabricating a semiconductor device are provided. In the methods, first material layers and second material layers may be alternatingly and repeatedly stacked on a substrate. An opening penetrating the first material layers and the second material layers may be formed. A semiconductor solution may be formed in the opening by using a spin-on process.

Abstract: A washing machine having a water softening device which improves the solubility of a detergent and a water softening performance concurrently. The washing machine includes a tub; a water supply device for supplying water to the tub; a detergent supply device for supplying a detergent to the tub; and a water softening device for softening the water. The water softening device is disposed such that the water supplied from the water supply device can be mixed with the detergent supplied from the detergent supply device and then the water mixed with the detergent can be supplied to the water softening device.

Abstract: Provided is a distributed Doherty power amplifier exhibiting high efficiency and linearity at a wide range of bandwidths, the distributed Doherty power amplifier including a first amplifier; a second amplifier, which is connected to the first amplifier in parallel; a first shifting unit, which is interconnected between the input of the first amplifier and the input of the second amplifier and inverses the phase of the input of the second amplifier; and a second shifting unit, which is interconnected between the output of the first amplifier and the output of the second amplifier and inverses the phase of the output of the second amplifier, wherein the first amplifier and the second amplifier are Doherty power amplifiers, and each of the Doherty power amplifiers includes a carrier amplifier and a peaking amplifier, which are connected in parallel.

Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

Abstract: Disclosed herein are a washing machine and a control method of the same wherein image change or light amount change based on displacement of an object, which is changed depending upon the weight of laundry, is sensed to detect the weight of the laundry, thereby improving reliability in detecting the weight of the laundry.

Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

Abstract: A refrigerator and a method to control the same are provided. The refrigerator includes a body having a supercooling compartment, a cooling unit to provide cool air to the supercooling compartment, an electromagnetic radiation sensor to detect electromagnetic radiation emitted when a food placed in the supercooling compartment begins to freeze, an energy supply to apply energy to the food placed in the supercooling compartment to prevent freezing of the food, and a controller to receive a detection signal from the electromagnetic radiation and then to activate the energy supply. Electromagnetic radiation emitted from each beverage in a supercooled state when the beverage begins to freeze is detected and energy is applied to the beverage according to the detection.

Abstract: A robot cleaner system having an improved docking structure between a robot cleaner and a docking station, which is capable of an easy docking operation of the robot cleaner and preventing loss of a suction force generated in the docking station. The robot cleaner includes a docking portion to be inserted into a dust suction hole of the docking station upon a docking operation. The docking portion may be a protrusion, which protrudes out of a robot body to be inserted into a dust suction path defined in the docking station, the protrusion communicates a dust discharge hole of the robot cleaner with the dust suction path of the docking station. The robot cleaner system includes a coupling device to keep the robot cleaner and the docking station in their docked state. The coupling device is configured to have a variety of shapes.

Abstract: A robot cleaning system and a dust removing method of the same that are capable of moving a first dust collector mounted in a robot cleaner to a docking station to remove dust collected in the first dust collector. The robot cleaning system includes a robot cleaner having an opening, though which a first dust collector to collect suctioned dust is carried in and out of the robot cleaner, a docking station, to which the robot cleaner is docked to remove the dust collected in the first dust collector, and a collector moving unit to move the first dust collector to the docking station.

Abstract: Provided is a device for sampling and pretreating biological fluid. It comprises: a piercing unit having at a lower portion a capillary tip which is to be inserted into skin to a predetermined depth to take biological fluid therethrough; a dropper, connected to an upper portion of the piercing unit, having an injection tube at an upper portion thereof, the injection tube communicating with the capillary tip; and a reagent container, designed to accommodate the piercing unit therein in an airtight manner so as to seal an outer circumference of the piercing unit, functioning to contain a reagent for treating the biological fluid of the capillary tip of the piercing unit. The device allows even a novice to sample and pre treat biological fluid with high accuracy without the use of expensive precision devices. The device employs fewer expendable supplies, thus providing higher convenience for the user.

Abstract: A method of forming an information storage pattern, includes placing a semiconductor substrate in a process chamber, injecting first, second and third process gases into the process chamber during a first process to form a lower layer on the substrate based on a first injection time and/or a first pause time, injecting the second process gas into the process chamber during a second process, wherein the second process gas is injected into the process chamber during a first elimination time, injecting a fourth process gas together with the second and third process gases into the process chamber during a third process in accordance with a second injection time and/or a second pause time to form an upper layer on the lower layer, and injecting the second process gas into the process chamber during a fourth process, wherein the second process gas is injected into the process chamber during a second elimination.

Abstract: Provided are methods of forming a phase change memory device. A semiconductor device having a lower electrode and an interlayer insulating layer may be prepared. The lower electrode may be surrounded by the interlayer insulating layer. Source gases, a reaction gas and a purge gas may be injected into a process chamber of a semiconductor fabrication device to form a phase change material layer on a semiconductor substrate. The source gases may be simultaneously injected into the process chamber. The phase change material layer may be in contact with the lower electrode through the interlayer insulating layer. The phase change material layer may be etched to form a phase change memory cell in the interlayer insulating layer. An upper electrode may be formed on the phase change memory cell.

Abstract: The present invention relates to novel use of a ligand specific to a FEX-2 polypeptide. More specifically, the present invention relates to methods for modulating the secretion of an inflammation-associated cytokine and for treating or preventing an inflammatory disease using the FEX-2-specific ligand. The ligand specific to the FEX-2 polypeptide can bind to FEX-2 expressed on the surface of phagocytes so that it can stimulate the secretion of anti-inflammatory cytokine and inhibit the secretion of inflammatory cytokine, so as to treat or prevent inflammatory diseases.

Abstract: A water softener which uses ion exchange resins to soften water and a washing machine having the same are disclosed. The water softener and the washing machine having the same include an ion exchange unit including ion exchange resins therein, the ion exchange unit including a first ion exchange unit and a second ion exchange unit which alternately perform softening of water and regeneration of the ion exchange resins. Since any one of the first ion exchange unit and the second ion exchange unit performs softening of water and the other one thereof performs regeneration of the ion exchange resins, it is possible to continuously supply soft water.

Abstract: A washing machine having a water softening device which improves the solubility of a detergent and a water softening performance concurrently. The washing machine includes a tub; a water supply device for supplying water to the tub; a detergent supply device for supplying a detergent to the tub; and a water softening device for softening the water. The water softening device is disposed such that the water supplied from the water supply device can be mixed with the detergent supplied from the detergent supply device and then the water mixed with the detergent can be supplied to the water softening device.