Patents by Inventor Hae Chan Park

Hae Chan Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHASE CHANGE MEMORY DEVICE HAVING MULTI-LEVEL AND METHOD OF DRIVING THE SAME
    Publication number: 20150043268
    Abstract: A phase change memory device having a multi-level and a method of driving the same are presented. The disclosed phase change memory device includes variable resistors and shifting units. The variable resistors are interchanged into set and reset states in response to an applied current. The shifting units, which are connected to the variable resistors, shift resistance distribution in the set and reset state of the variable resistors by a predetermined level.
    Type: Application
    Filed: September 23, 2014
    Publication date: February 12, 2015
    Inventors: Hae Chan PARK, Se Ho Lee
  • ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20150039785
    Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes an odd-numbered layer structure disposed over a substrate and including a plurality of first lines which extend in a first direction; an even-numbered layer structure disposed over the substrate and including a plurality of second lines which extend in a second direction crossing the first direction; and resistance variable layers interposed between the first lines, between the second lines, and between the first lines and the second lines, wherein the odd-numbered layer structure and the even-numbered layer structure are alternately stacked over the substrate.
    Type: Application
    Filed: December 11, 2013
    Publication date: February 5, 2015
    Applicant: SK HYNIX INC.
    Inventor: Hae-Chan PARK
  • PHASE CHANGE MEMORY DEVICE HAVING MULTI-LEVEL AND METHOD OF DRIVING THE SAME
    Publication number: 20150009752
    Abstract: A phase change memory device having a multi-level and a method of driving the same are presented. The disclosed phase change memory device includes variable resistors and shifting units. The variable resistors are interchanged into set and reset states in response to an applied current. The shifting units, which are connected to the variable resistors, shift resistance distribution in the set and reset state of the variable resistors by a predetermined level.
    Type: Application
    Filed: September 23, 2014
    Publication date: January 8, 2015
    Inventors: Hae Chan PARK, Se Ho LEE
  • PHASE CHANGE MEMORY DEVICE HAVING MULTI-LEVEL AND METHOD OF DRIVING THE SAME
    Publication number: 20150009753
    Abstract: A phase change memory device having a multi-level and a method of driving the same are presented. The disclosed phase change memory device includes variable resistors and shifting units. The variable resistors are interchanged into set and reset states in response to an applied current. The shifting units, which are connected to the variable resistors, shift resistance distribution in the set and reset state of the variable resistors by a predetermined level.
    Type: Application
    Filed: September 23, 2014
    Publication date: January 8, 2015
    Inventors: Hae Chan PARK, Se Ho Lee
  • Semiconductor integrated circuit system and method for driving the same
    Patent number: 8885402
    Abstract: A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.
    Type: Grant
    Filed: June 5, 2014
    Date of Patent: November 11, 2014
    Assignee: SK Hynix Inc.
    Inventors: Hae Chan Park, Soo Gil Kim
  • Semiconductor integrated circuit system and method for driving the same
    Patent number: 8879313
    Abstract: A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.
    Type: Grant
    Filed: June 5, 2014
    Date of Patent: November 4, 2014
    Assignee: SK Hynix Inc.
    Inventors: Hae Chan Park, Soo Gil Kim
  • RESISTIVE MEMORY DEVICE AND OPERATION METHOD THEREOF
    Publication number: 20140325120
    Abstract: A resistive memory device includes a memory cell array including a unit memory cell coupled between a word line and a bit line, wherein the unit memory cell includes a data storage material and a non-silicon-substrate-based type bidirectional access device coupled in series, a path setting circuit coupled between the bit line and the word line, suitable for providing a program pulse toward the bit line or the word line based on a path control signal, a forward write command, and a reverse write command, and a control unit suitable for providing a write path control signal, a forward program command, and a reverse program command based on an external command signal.
    Type: Application
    Filed: October 1, 2013
    Publication date: October 30, 2014
    Applicant: SK hynix Inc.
    Inventors: Hae Chan PARK, Myoung Sub KIM, Se Ho LEE, Seung Yun LEE
  • PHASE-CHANGE MEMORY DEVICE HAVING PHASE-CHANGE REGION DIVIDED INTO MULTI LAYERS AND OPERATING METHOD THEREOF
    Publication number: 20140301137
    Abstract: A phase-change memory device including a multi-level cell and an operation method thereof are provided. The device includes a first phase-change material layer to which a current is provided from a heating electrode, and a second phase-change material layer formed with continuity to the first phase-change material layer and having a different width from the first phase-change material layer, and to which a current is provided from the heating electrode. The second phase-change material layer includes a material having smaller resistivity and a lower crystallization rate than the first phase-change material layer.
    Type: Application
    Filed: June 19, 2014
    Publication date: October 9, 2014
    Inventors: Jin Hyock KIM, Su Jin CHAE, Young Seok KWON, Hae Chan PARK
  • SEMICONDUCTOR INTEGRATED CIRCUIT SYSTEM AND METHOD FOR DRIVING THE SAME
    Publication number: 20140286090
    Abstract: A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.
    Type: Application
    Filed: June 5, 2014
    Publication date: September 25, 2014
    Inventors: Hae Chan PARK, Soo Gil KIM
  • SEMICONDUCTOR INTEGRATED CIRCUIT SYSTEM AND METHOD FOR DRIVING THE SAME
    Publication number: 20140286089
    Abstract: A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.
    Type: Application
    Filed: June 5, 2014
    Publication date: September 25, 2014
    Inventors: Hae Chan PARK, Soo Gil KIM
  • Phase change memory device having multi-level and method of driving the same
    Patent number: 8842461
    Abstract: A phase change memory device having a multi-level and a method of driving the same are presented. The disclosed phase change memory device includes variable resistors and shifting units. The variable resistors are interchanged into set and reset states in response to an applied current. The shifting units, which are connected to the variable resistors, shift resistance distribution in the set and reset state of the variable resistors by a predetermined level.
    Type: Grant
    Filed: December 6, 2012
    Date of Patent: September 23, 2014
    Assignee: SK Hynix Inc.
    Inventors: Hae Chan Park, Se Ho Lee
  • PHASE-CHANGE MEMORY DEVICE HAVING MULTIPLE DIODES
    Publication number: 20140209847
    Abstract: A phase-change memory device with an improved current characteristic is provided. The phase-change memory device includes a metal word line, a semiconductor layer of a first conductivity type being in contact with the metal word line, and an auxiliary diode layer being in contact with metal word line and the semiconductor layer.
    Type: Application
    Filed: April 1, 2014
    Publication date: July 31, 2014
    Applicant: SK hynix Inc.
    Inventor: Hae Chan PARK
  • Semiconductor integrated circuit system and method for driving the same
    Patent number: 8780621
    Abstract: A semiconductor integrated circuit system includes a phase-change line including a first phase-change area constituting a first memory cell and a second phase-change area constituting a second memory cell, a write current providing unit configured to phase-change a selected one of the first and second phase-change areas, and a phase-change compensation unit configured to restore the other of the first and second phase-change areas by compensating for a dummy phase-change caused in the other phase-change area due to a phase-change of the selected phase-change area.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: July 15, 2014
    Assignee: SK Hynix Inc.
    Inventors: Hae Chan Park, Soo Gil Kim
  • HIGH VOLTAGE GENERATING CIRCUIT FOR RESISTIVE MEMORY APPARATUS
    Publication number: 20140169065
    Abstract: A high voltage generating circuit for a resistive memory apparatus is provided. The high voltage generating circuit includes a capacitor spaced from a semiconductor substrate and electrically insulated from the semiconductor substrate. A switching device, which is electrically connected to the capacitor, is electrically insulated from the semiconductor substrate.
    Type: Application
    Filed: March 18, 2013
    Publication date: June 19, 2014
    Applicant: SK HYNIX INC.
    Inventor: Hae Chan PARK
  • RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20140166965
    Abstract: A resistive memory device may include a bottom structure, a memory cell structure disposed on the bottom structure, and a data storage material disposed to surround an outer sidewall of the memory cell structure.
    Type: Application
    Filed: March 18, 2013
    Publication date: June 19, 2014
    Applicant: SK Hynix Inc.
    Inventors: Jung Won SEO, Hae Chan PARK, Myoung Sub KIM, Sung Bin HONG, Se Ho LEE, Seung Yun LEE
  • Phase-change memory device having multiple diodes
    Patent number: 8710480
    Abstract: A phase-change memory device with an improved current characteristic is provided. The phase-change memory device includes a metal word line, a semiconductor layer of a first conductivity type being in contact with the metal word line, and an auxiliary diode layer being in contact with metal word line and the semiconductor layer.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: April 29, 2014
    Assignee: SK Hynix Inc.
    Inventor: Hae Chan Park
  • Nonvolatile memory cell, nonvolatile memory device and method for driving the same
    Patent number: 8675402
    Abstract: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 18, 2014
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hae-Chan Park, Gap-Sok Do, Jang-Uk Lee
  • RESISTIVE MEMORY DEVICE CAPABLE OF PREVENTING DISTURBANCE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20140054537
    Abstract: A resistive memory device capable of preventing disturbance is provided. The resistive memory device includes a lower electrode formed on a semiconductor substrate, a variable resistor disposed on the lower electrode, an upper electrode disposed on the variable resistor, and an interlayer insulating layer configured to insulate the variable resistor. The interlayer insulating layer may include an air-gap area in at least a portion thereof.
    Type: Application
    Filed: March 8, 2013
    Publication date: February 27, 2014
    Applicant: SK hynix Inc.
    Inventors: Seung Yun LEE, Hae Chan PARK, Myoung Sub KIM, Sung Bin HONG, Se Ho LEE, Jung Won SEO
  • Nonvolatile memory cell, nonvolatile memory device and method for driving the same
    Patent number: 8570796
    Abstract: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of the phase-change layer to face each other across the phase-in change layer and control a current flowing through the phase-change layer by each gate being arranged to induce the phase transition of the phase-change layer independently of the other.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: October 29, 2013
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hae-Chan Park, Gap-Sok Do, Jang-Uk Lee
  • Square pillar-shaped switching element for memory device and method of manufacturing the same
    Patent number: 8524523
    Abstract: A switching element for a memory device includes a base layer including a plurality of line-type trenches. First insulation patterns are formed on the base layer excluding the trenches. First diode portions are formed on the bottoms of the trenches in the form of a thin film. Second insulation patterns are formed on the first diode portions and are spaced apart from each other to form holes in the trenches having the first diode portions provided therein. Square pillar-shaped second diode portions are formed in the holes over the first diode portions.
    Type: Grant
    Filed: September 2, 2009
    Date of Patent: September 3, 2013
    Assignee: Hynix Semiconductor Inc.
    Inventor: Hae Chan Park