Patents by Inventor Hae-In JUNG

Hae-In JUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7876241
    Abstract: In a data demodulating method and apparatus, and a code arranging method, a multiplexer multiplexes an input data stream divided by a predetermined length into a plurality of types of pseudo-random data streams using multiplexed information of predetermined bits by applying a predetermined multiplexing method to each of the pseudo-random data streams. An encoder RLL-modulates the plurality of types of pseudo-random data streams to create a modulated code stream including a minimum of DC components. The multiplexer generates the random data streams by inconsecutively scrambling the input data stream using the multiplexed information. The encoder weak DC-free RLL-modulates each of the multiplexed data streams without using a DC control sub code conversion table to which additional bits are added and provides a code stream including a minimum of DC components among multiplexed, RLL-modulated code streams.
    Type: Grant
    Filed: November 21, 2007
    Date of Patent: January 25, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-seong Shim, Jin-han Kim, Kiu-hae Jung
  • Patent number: 7864649
    Abstract: An information storage medium has user data areas and additional data areas, and sync patterns to distinguish the additional data areas from the user data areas. The information storage medium includes a user data area in which user data is recorded and an additional data area located in at least one of areas before and after the user data area. Second sync patterns used in the additional data area are different from first sync patterns used in the user data area.
    Type: Grant
    Filed: January 25, 2008
    Date of Patent: January 4, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kiu-hae Jung, Jae-seong Shim, Kyung-geun Lee
  • Patent number: 7864648
    Abstract: An information storage medium has user data areas and additional data areas, and sync patterns to distinguish the additional data areas from the user data areas. The information storage medium includes a user data area in which user data is recorded and an additional data area located in at least one of areas before and after the user data area. Second sync patterns used in the additional data area are different from first sync patterns used in the user data area.
    Type: Grant
    Filed: January 25, 2008
    Date of Patent: January 4, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kiu-hae Jung, Jae-seong Shim, Kyung-geun Lee
  • Patent number: 7835095
    Abstract: An apparatus and method of setting up a bit error rate (BER) criterion and an apparatus and method of performing a burn-in test using the method of setting up the BER criterion. The method of setting the BER criterion includes measuring temperatures of hard disc drives (HDDs), and changing a BER criterion in which, if the measured temperature of the HDD is higher than an optimum temperature for a burn-in test, a new BER criterion having a value greater than the BER criterion of the optimum temperature is set up, and, if the measured temperature of the HDD is lower than an optimum temperature for a burn-in test, a new BER criterion having a value less than the BER criterion of the optimum temperature is set up.
    Type: Grant
    Filed: March 5, 2008
    Date of Patent: November 16, 2010
    Assignee: Samsung Electronics Co. Ltd
    Inventors: Sang-hyub Lee, Hae-jung Lee
  • Publication number: 20100265805
    Abstract: An information storage medium has user data areas and additional data areas, and sync patterns to distinguish the additional data areas from the user data areas. The information storage medium includes a user data area in which user data is recorded and an additional data area located in at least one of areas before and after the user data area. Second sync patterns used in the additional data area are different from first sync patterns used in the user data area.
    Type: Application
    Filed: June 28, 2010
    Publication date: October 21, 2010
    Applicant: Samsung Electronics, Co., Ltd.
    Inventors: Kiu-hae JUNG, Jae-seong Shim, Kyung-geun Lee
  • Publication number: 20100251826
    Abstract: A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.
    Type: Application
    Filed: April 21, 2008
    Publication date: October 7, 2010
    Inventors: Chang Auck Choi, Chang Han Je, Gunn Hwang, Youn Tae Kim, Sung Hae Jung, Myung Lae Lee, Sung Sik Lee, Seok Hwan Moon
  • Publication number: 20100196329
    Abstract: Disclosed herein is a cell therapeutic composition for treating ischemic limb diseases, more specifically, disclosed is a cell therapeutic composition for treating ischemic diseases, which contains adipose tissue-derived mesenchymal stem cells and sucrose or mannose as an excipient. The composition induces angiogenesis around closed blood vessels in the ischemic limb lesions, and thus is useful to treat ischemic diseases.
    Type: Application
    Filed: May 9, 2008
    Publication date: August 5, 2010
    Applicant: RNL BIO CO., LTD.
    Inventors: Jeong Chan Ra, Hae Jung Han, Hang Young Lee, Hyo Eun Kim
  • Patent number: 7746750
    Abstract: A method of recording information on and/or reproducing information from an information storage medium that includes a user data area in which user data is recorded and which has first sync patterns and an additional data area located in at least one of areas before and after the user data area includes forming second sync patterns used in the additional data area which are different from the first sync patterns used in the user data area.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: June 29, 2010
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Kiu-hae Jung, Jae-seong Shim, Kyung-geun Lee
  • Patent number: 7724629
    Abstract: An information storage medium has user data areas and additional data areas, and sync patterns to distinguish the additional data areas from the user data areas. The information storage medium includes a user data area in which user data is recorded and an additional data area located in at least one of areas before and after the user data area. Second sync patterns used in the additional data area are different from first sync patterns used in the user data area.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: May 25, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kiu-hae Jung, Jae-seong Shim, Kyung-geun Lee
  • Patent number: 7710850
    Abstract: A data reproducing method reproducing data recorded in a super resolution information storage medium in a form of marks having magnitudes less than a resolving power of an incident light beam, and an apparatus thereof. The data reproducing method includes irradiating a first beam having a resolving power causing a super resolution phenomenon and a second beam having a resolving power not causing a super resolution phenomenon into different places on the information storage medium, detecting a first reproduction signal based on the first beam and a second reproduction signal based on the second beam, and compensating for and calculating a temporal delay between the first reproduction signal and the second reproduction signal. Therefore, a signal reflected from a peripheral area of a reproduction beam spot other than a super resolution area can be excluded, thereby improving reproduction signal characteristics.
    Type: Grant
    Filed: June 29, 2005
    Date of Patent: May 4, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-kyung Lee, Joo-ho Kim, Chong-sam Chung, In-oh Hwang, Kiu-hae Jung, Hyun-ki Kim
  • Patent number: 7709367
    Abstract: A method for fabricating a storage node contact in a semiconductor device includes forming a landing plug over a substrate, forming a first insulation layer over the landing plug, forming a bit line pattern over the first insulation layer, forming a second insulation layer over the bit line pattern, forming a mask pattern for forming a storage node contact over the second insulation layer, etching the second and first insulation layers until the landing plug is exposed to form a storage node contact hole including a portion having a rounded profile, filling a conductive material in the storage node contact hole to form a contact plug, and forming a storage node over the contact plug.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: May 4, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hae-Jung Lee, Ik-Soo Choi, Chang-Youn Hwang, Mi-Hyune You
  • Publication number: 20100096713
    Abstract: Provided are a Micro Electro-Mechanical System (MEMS) package and a method of packaging the MEMS package. The MEMS package includes: a MEMS device including MEMS structures formed on a substrate, first pad electrodes driving the MEMS structures, first sealing parts formed at an edge of the substrate, and connectors formed on the first pad electrodes and the first sealing parts; and a MEMS driving electronic device including second pad electrodes and second sealing parts respectively corresponding to the first pad electrodes and the first sealing parts to be sealed with and bonded to the MEMS device through the connectors to form an air gap having a predetermined width.
    Type: Application
    Filed: July 25, 2007
    Publication date: April 22, 2010
    Applicant: ELECTRONIC AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventor: Sung-Hae JUNG
  • Patent number: 7701829
    Abstract: An information storage medium has user data areas and additional data areas, and sync patterns to distinguish the additional data areas from the user data areas. The information storage medium includes a user data area in which user data is recorded and an additional data area located in at least one of areas before and after the user data area. Second sync patterns used in the additional data area are different from first sync patterns used in the user data area.
    Type: Grant
    Filed: January 25, 2008
    Date of Patent: April 20, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kiu-hae Jung, Jae-seong Shim, Kyung-geun Lee
  • Patent number: 7678676
    Abstract: A method for fabricating a semiconductor device with a recess gate includes providing a substrate, forming an isolation layer over the substrate to define an active region, forming mask patterns with a first width opening exposing a region where recess patterns are to be formed, and a second width opening smaller than the first width and exposing the isolation layer, forming a passivation layer along a height difference of the mask patterns, etching the substrate using the passivation layer and the mask patterns as an etch barrier to form recess patterns, removing the passivation layer and the mask patterns, and forming gate patterns protruding from the substrate to fill the recess patterns.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: March 16, 2010
    Assignee: Hynix Semiconductor, Inc.
    Inventors: Hae-Jung Lee, Jae-Seon Yu, Jae-Kyun Lee, Sang-Rok Oh
  • Patent number: 7679186
    Abstract: A piezoelectric micro electro-mechanical system switch (MEMS), an array of piezoelectric MEMS switches, and a method of fabricating the switch, which are capable of improving low voltage and switching characteristics while securing high signal isolation, are provided. The piezoelectric MEMS switch includes a semiconductor substrate including a groove, a support formed over the semiconductor substrate and the groove. An actuator including a piezoelectric layer is formed on the support. A switching member is formed on the support on one side of the actuator, wherein upward movement of the switching member changes by a deformation of the piezoelectric layer of the actuator. Radio frequency (RF) transfer lines are arranged at a predetermined distance on the switching member and are separated by a predetermined interval from each other. The actuator is formed to have at least two cantilevers each having one end such that the ends are connected to each other.
    Type: Grant
    Filed: December 6, 2006
    Date of Patent: March 16, 2010
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sung Hae Jung, Myung Lae Lee, Sung Weon Kang
  • Publication number: 20100062598
    Abstract: A method for fabricating a semiconductor device includes forming an inter-layer insulation layer on a substrate; forming openings in the inter-layer insulation layer; forming a metal barrier layer in the openings and on the inter-layer insulation layer; forming a first conductive layer on the metal barrier layer and filled in the openings; etching the first conductive layer to form interconnection layers in the openings and to expose portions of the metal barrier layer, the interconnection layers being inside the openings and at a depth from a top of the openings; etching the exposed portions of the metal barrier layer to obtain a sloped profile of the metal barrier layer at top lateral portions of the openings; forming a second conductive layer over the inter-layer insulation layer, the interconnection layers and the metal barrier layer with the sloped profile; and patterning the second conductive layer to form metal lines.
    Type: Application
    Filed: November 13, 2009
    Publication date: March 11, 2010
    Inventors: Hae-Jung LEE, Sang-Hoon Cho, Suk-Ki Kim
  • Publication number: 20100050771
    Abstract: A conventional capacitive accelerometer has a limitation in reducing a distance between a sensing electrode and a reference electrode, and requires a complex process and a separate method of correcting a clearance difference caused by a process error. However, the capacitive accelerometer of the present invention has high sensitivity, can be simply manufactured by maintaining a very narrow distance between a reference electrode and a sensing electrode, and can make it unnecessary to individually correct each manufactured accelerometer by removing or drastically reducing a functional difference due to a process error.
    Type: Application
    Filed: December 5, 2007
    Publication date: March 4, 2010
    Applicant: Electronics and Telecommunications Research Instit
    Inventors: Chang-Han Je, Gunn Hwang, Sung-Hae Jung, Myung-Lae Lee, Chang-Auck Choi
  • Patent number: 7670774
    Abstract: Oligonucleotide probes for analyzing 40 types of HPV were synthesized, and DNA chips were produced by using the oligonucleotide probes. The synthesis of the oligonucleotide probes is based on clones of L1 and E6/E7 genes of 35 types of HPV obtained from cervical cell specimens from 4,898 Korean adult women and tissue specimens from 68 cervical cancer cases in addition to information based on American and European cases. The DNA chips can analyze the 40 types of HPV found in cervical, diagnose complex infection by at least one type of HPV, and have excellent diagnostic sensitivity and specificity on HPV genetic type up to 100% and reproducibility. Also, the DAN chips are superior to conventional analytic method, and very economical, since they can analyze numerous specimens in shortest time. Accordingly, the DNA chips are useful for predicting cervical cancer and precancerous lesion.
    Type: Grant
    Filed: March 18, 2005
    Date of Patent: March 2, 2010
    Assignee: Goodgene Inc.
    Inventors: Woo-Chul Moon, Myung-Ryurl Oh, Su-Bin Yim, Tae-Han Eum, Eun-Hae Jung, Jung-Eun Ko, Jae-Han Bae
  • Patent number: 7660059
    Abstract: Provided are a method of improving a recording performance of a hard disk drive (HDD) by controlling write strength according to a flying height of a head and a computer-readable recording medium having recorded thereon a computer-readable program suitable for the method. The method of controlling write strength of the HDD includes calculating the flying height of the head before starting a recording operation and controlling the write strength according to the calculated flying height. Accordingly, optimal writing can be performed by the write strength according to the head flying height.
    Type: Grant
    Filed: May 9, 2006
    Date of Patent: February 9, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyo-june Ahn, Hae-jung Lee, Seon-mi Hwang
  • Publication number: 20100025806
    Abstract: In a semiconductor device and related method of fabricating the same, a hard mask layer is formed over a substrate, portions of the hard mask layer and the substrate are etched to form trenches having protruding portions at sidewalls, and an insulation layer buried in the trenches is formed to form device isolation regions having protruding portions at sidewalls, wherein the device isolation regions decrease a portion of a width of active regions.
    Type: Application
    Filed: December 30, 2008
    Publication date: February 4, 2010
    Applicant: Hynix Semiconductor Inc.
    Inventors: Yong-Tae Cho, Hae-Jung Lee, Eun-Mi Kim, Kyeong-Hyo Lee