Abstract: Disclosed are semiconductor devices and their fabricating methods. The semiconductor device comprises a dielectric layer, a trench formed in the dielectric layer, a metal pattern that conformally covers a top surface of the dielectric layer, an inner side surface of the trench, and a bottom surface of the trench, a first protection layer that conformally covers the metal pattern, and a second protection layer that covers the first protection layer. A cavity is formed in the trench. The cavity is surrounded by the first protection layer. The first protection layer has an opening that penetrates the first protection layer and extends from a top surface of the first protection layer. The opening is connected to the cavity. A portion of the second protection layer extends into the opening and closes the cavity.

Abstract: Disclosed are semiconductor devices and their fabricating methods. The semiconductor device comprises a dielectric layer, a trench formed in the dielectric layer, a metal pattern that conformally covers a top surface of the dielectric layer, an inner side surface of the trench, and a bottom surface of the trench, a first protection layer that conformally covers the metal pattern, and a second protection layer that covers the first protection layer. A cavity is formed in the trench. The cavity is surrounded by the first protection layer. The first protection layer has an opening that penetrates the first protection layer and extends from a top surface of the first protection layer. The opening is connected to the cavity. A portion of the second protection layer extends into the opening and closes the cavity.

Abstract: An infrared detector may be configured to detect a wide bandwidth of infrared spectrum using a broadband surface plasmon resonator. The infrared detector may include a substrate; a thermistor member disposed spaced from the substrate, the thermistor member having a resistance value that varies according to temperature; a resonator disposed on the thermistor member, the resonator configured to generate surface plasmon resonance; a pair of thermal legs configured to support the thermistor member such that the thermistor member is disposed spaced from the substrate; and a pair of conductive lead wires respectively disposed on the pair of thermal legs. The conductive lead wires may be configured to transmit signals to the substrate from the thermistor member and the resonator. The resonator may have a plurality of resonant frequencies and be configured to generate the surface plasmon resonance in a plurality of resonant modes.

Abstract: An infrared detector may be configured to detect a wide bandwidth of infrared spectrum using a broadband surface plasmon resonator. The infrared detector may include a substrate; a thermistor member disposed spaced from the substrate, the thermistor member having a resistance value that varies according to temperature; a resonator disposed on the thermistor member, the resonator configured to generate surface plasmon resonance; a pair of thermal legs configured to support the thermistor member such that the thermistor member is disposed spaced from the substrate; and a pair of conductive lead wires respectively disposed on the pair of thermal legs. The conductive lead wires may be configured to transmit signals to the substrate from the thermistor member and the resonator. The resonator may have a plurality of resonant frequencies and be configured to generate the surface plasmon resonance in a plurality of resonant modes.

Abstract: An infrared detector capable of detecting an infrared spectrum having a wide bandwidth using a broadband light absorber. The infrared detector including a substrate, a light absorber disposed apart from the substrate at a distance, and a pair of thermal legs configured to support the light absorber such that the light absorber is spaced apart from the substrate by the distance. The light absorber includes at least one thermistor layer having a resistance value that varies according to temperature and at least two resonator layers disposed on at least one of upper and lower surfaces of the at least one thermistor layer.

Abstract: An infrared detector includes at least one infrared absorber provided on a substrate and a plurality of thermocouples. The at least one infrared absorber may include one of a plasmonic resonator and a metamaterial resonator. The plurality of thermocouples may be configured to generate electromotive forces in response to thermal energy generated by the at least one infrared absorber.

Abstract: An infrared detector may include a substrate, a resonant unit spaced apart from the substrate, the resonant unit configured to generate heat by inducing resonance at a plurality of wavelengths of incident infrared light, a thermistor layer configured to support the resonant unit and be spaced apart from the resonant unit, the thermistor layer having a resistance value that varies according to the heat generated in the resonant unit, and a connection unit configured to support the thermistor layer such that the thermistor layer is spaced apart from the substrate and electrically connect the thermistor layer to the substrate.

Abstract: A infrared ray detector includes a first metal layer; a second metal layer on the first metal layer and configured to absorb infrared rays; a thermistor layer below the second metal layer, the thermistor layer having a resistance that changes according to infrared rays absorbed in the second metal layer; a thermal leg below the thermistor layer and separated from the first metal layer; and a control unit configured to control a gap between the first metal layer and the thermal leg.

Abstract: In some example embodiments, an infrared detector may comprise a substrate; a resonator spaced apart from the substrate, the resonator absorbing incident infrared light; a thermoelectric material layer contacting the resonator and having a variable resistance according to temperature variation due to the absorbed incident infrared light; a lead wire electrically connecting the thermoelectric material layer and the substrate; a heat separation layer between the substrate and the thermoelectric material layer, the heat separation layer preventing heat from being transferred from the thermoelectric material layer to the substrate; and/or a ground plane layer preventing the incident infrared light from proceeding toward the substrate. The heat separation layer may at least reduce heat transfer from the thermoelectric material layer to the substrate. The ground plane layer may at least reduce an amount of the incident infrared light that reaches the substrate.

Abstract: According to example embodiments, an infrared thermal detector includes a substrate, a detector spaced apart from the substrate, and a thermal legal configured to transmit a signal from the detector to the substrate. The detector is configured to absorb incident infrared light via localized surface Plasmon resonance, and the detector is configured to change a resistance value according to a temperature change caused by the absorbed infrared light.

Abstract: An electromagnetic wave spectrum analyzer includes a plurality of resonance structures each having a different resonance frequency, a plurality of thermal legs configured to support the plurality of resonance structures, a substrate including circuit elements configured to detect resistance changes in the plurality of thermal legs, and a signal processing unit configured to analyze a spectrum of incident electromagnetic waves from the resistance changes. The plurality of thermal legs are formed of a thermistor material of which an electrical resistance is changed due to thermal energy of electromagnetic waves absorbed by the plurality of resonance structures.

Abstract: An infrared detector includes at least one infrared absorber provided on a substrate and a plurality of thermocouples. The at least one infrared absorber may include one of a plasmonic resonator and a metamaterial resonator. The plurality of thermocouples may be configured to generate electromotive forces in response to thermal energy generated by the at least one infrared absorber.

Abstract: An infrared detector may include a substrate, a resonant unit spaced apart from the substrate, the resonant unit configured to generate heat by inducing resonance at a plurality of wavelengths of incident infrared light, a thermistor layer configured to support the resonant unit and be spaced apart from the resonant unit, the thermistor layer having a resistance value that varies according to the heat generated in the resonant unit, and a connection unit configured to support the thermistor layer such that the thermistor layer is spaced apart from the substrate and electrically connect the thermistor layer to the substrate.

Abstract: An infrared detector capable of detecting an infrared spectrum having a wide bandwidth using a broadband light absorber. The infrared detector including a substrate, a light absorber disposed apart from the substrate at a distance, and a pair of thermal legs configured to support the light absorber such that the light absorber is spaced apart from the substrate by the distance. The light absorber includes at least one thermistor layer having a resistance value that varies according to temperature and at least two resonator layers disposed on at least one of upper and lower surfaces of the at least one thermistor layer.

Abstract: A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.

Abstract: A infrared ray detector includes a first metal layer; a second metal layer on the first metal layer and configured to absorb infrared rays; a thermistor layer below the second metal layer, the thermistor layer having a resistance that changes according to infrared rays absorbed in the second metal layer; a thermal leg below the thermistor layer and separated from the first metal layer; and a control unit configured to control a gap between the first metal layer and the thermal leg.

Abstract: A resonator including a substrate, and a resonating unit having an active region that causes resonances and a non-active region that does not cause resonances, and having a first electrode, a piezoelectric film, and a second electrode layered in turn on the substrate. At least one of the first and the second electrodes is formed, so that at least a portion of a non-active region portion thereof has a thickness different from that of an active region portion thereof.

Abstract: A two-axis geomagnetic sensor is disclosed. The two-axis geomagnetic sensor includes a first geomagnetic sensor part including a first wafer and a first geomagnetic sensor on a surface of the first wafer; and a second geomagnetic sensor part including a second wafer and a second geomagnetic sensor on a surface of the second wafer. The first and second geomagnetic sensor parts are bonded to each other, in which the first and second geomagnetic sensors positioned in an orthogonal relation to each other. Accordingly, an occupancy area of the geomagnetic sensor can be reduced. Further, the geomagnetic sensor on each axe can have the same magnetic material properties, and alignment deviation cannot be generated.

Abstract: A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.

Abstract: A radio frequency (RF) module and a multi RF module including the same include a base substrate, a first element capable of processing RF signals formed on the base substrate, a second element capable of processing RF signals separated from and disposed over the first element, a cap substrate coupled with the base substrate to encapsulate the first and second elements including a plurality of through electrodes that electrically connect the first and second elements to the outside, and a bonding pad that encapsulates and joins the base substrate and the cap substrate and electrically connects the first and second elements to the through electrodes.