Abstract: A radio frequency (RF) module and a multi RF module including the same include a base substrate, a first element capable of processing RF signals formed on the base substrate, a second element capable of processing RF signals separated from and disposed over the first element, a cap substrate coupled with the base substrate to encapsulate the first and second elements including a plurality of through electrodes that electrically connect the first and second elements to the outside, and a bonding pad that encapsulates and joins the base substrate and the cap substrate and electrically connects the first and second elements to the through electrodes.

Abstract: A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.

Abstract: An inductor integrated chip and fabrication method thereof is provided. The inductor integrated chip includes a wafer; an inductor bonded on a surface of the wafer; a circuit element formed on the surface of the wafer and coupled to a first end of the inductor; a packaging wafer connected to the surface of the wafer and packaging the inductor and the circuit element; and a connecting electrode formed on the packaging wafer and connected to a second end of the inductor. The method includes forming an inductor and a circuit element on a surface of a wafer, wherein the circuit element is coupled to a first end of the inductor; forming a connecting electrode on a packaging wafer; and packaging the inductor and the circuit element by joining the wafer and the packaging wafer so as to connect the connecting electrode with a second end of the inductor.

Abstract: An inductor fabricated with a dry film resist and a cavity and a method of fabricating the inductor. The cavity can be formed in a substrate to minimize a parasitic capacitance generated by structures of upper electrodes, an insulating layer, and a lower electrode and minimize energy loss caused by an eddy current generated through the substrate. Also, a process of forming and planarizing the cavity can be simplified so as to form the cavity to a sufficient depth. As a result, an inductor having a high quality factor and a high self resonant frequency can be fabricated. Also, a scheme for simply forming and planarizing a cavity is contemplated.

Abstract: A resonator includes a substrate, and a resonating unit formed on the substrate, and having a lower electrode, a piezoelectric film, and an upper electrode. The lower electrode is formed of at least two layers to adjust a piezoelectric coupling coefficient. The lower electrode includes a first electrode layer and a second electrode layer, which have crystallographic characteristics, particularly, grain sizes or surface roughnesses Ra, different from each other, respectively. The first and the second electrode layers are formed to have a predetermined thickness ratio to each other.

Abstract: A duplexer which prevents effects between transmitter and receiver filters. The duplexer include a substrate, a transmitter filter fabricated in a predetermined first area on a surface of the substrate, a receiver filter fabricated in a predetermined second area on the surface of the substrate and an air cavity fabricated in an area between the predetermined first and second areas by etching the substrate to isolate the transmitter and receiver filters from each other. The air cavity is fabricated in the substrate perpendicular to directions along which the transmitter and receiver filters are disposed. Accordingly, physical effects among elements can be effectively intercepted.

Abstract: An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material.

Abstract: A micro-machining method of manufacturing a micro fluxgate sensor manufactured having an amorphous magnetic core includes forming lower coils of an excitation coil and a magnetic field detecting coil on a wafer, depositing a first insulating layer on the lower coils and forming an amorphous magnetic core, depositing a second insulating layer on the amorphous magnetic core and forming upper coils connected to the lower coils to complete the excitation coil and the magnetic field detecting coil, and covering the excitation coil and the magnetic field detecting coil with a protective film, and etching the protective film to expose a portion of the excitation coil and magnetic field detecting coil, thereby forming a pad.

Abstract: A resonator includes a substrate, and a resonating unit formed on the substrate, and having a lower electrode, a piezoelectric film, and an upper electrode. The lower electrode is formed of at least two layers to adjust a piezoelectric coupling coefficient. The lower electrode includes a first electrode layer and a second electrode layer, which have crystallographic characteristics, particularly, grain sizes or surface roughnesses Ra, different from each other, respectively. The first and the second electrode layers are formed to have a predetermined thickness ratio to each other.

Abstract: A resonator including a substrate, and a resonating unit having an active region that causes resonances and a non-active region that does not cause resonances, and having a first electrode, a piezoelectric film, and a second electrode layered in turn on the substrate. At least one of the first and the second electrodes is formed, so that at least a portion of a non-active region portion thereof has a thickness different from that of an active region portion thereof.

Abstract: A two-axis geomagnetic sensor is disclosed. The two-axis geomagnetic sensor includes a first geomagnetic sensor part including a first wafer and a first geomagnetic sensor on a surface of the first wafer; and a second geomagnetic sensor part including a second wafer and a second geomagnetic sensor on a surface of the second wafer. The first and second geomagnetic sensor parts are bonded to each other, in which the first and second geomagnetic sensors positioned in an orthogonal relation to each other. Accordingly, an occupancy area of the geomagnetic sensor can be reduced. Further, the geomagnetic sensor on each axe can have the same magnetic material properties, and alignment deviation cannot be generated.

Abstract: A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.

Abstract: A radio frequency (RF) module and a multi RF module including the same include a base substrate, a first element capable of processing RF signals formed on the base substrate, a second element capable of processing RF signals separated from and disposed over the first element, a cap substrate coupled with the base substrate to encapsulate the first and second elements including a plurality of through electrodes that electrically connect the first and second elements to the outside, and a bonding pad that encapsulates and joins the base substrate and the cap substrate and electrically connects the first and second elements to the through electrodes.

Abstract: An inductor integrated chip and fabrication method thereof is provided. The inductor integrated chip includes a wafer; an inductor bonded on a surface of the wafer; a circuit element formed on the surface of the wafer and coupled to a first end of the inductor; a packaging wafer connected to the surface of the wafer and packaging the inductor and the circuit element; and a connecting electrode formed on the packaging wafer and connected to a second end of the inductor. The method includes forming an inductor and a circuit element on a surface of a wafer, wherein the circuit element is coupled to a first end of the inductor; forming a connecting electrode on a packaging wafer; and packaging the inductor and the circuit element by joining the wafer and the packaging wafer so as to connect the connecting electrode with a second end of the inductor.

Abstract: A duplexer which prevents effects between transmitter and receiver filters. The duplexer include a substrate, a transmitter filter fabricated in a predetermined first area on a surface of the substrate, a receiver filter fabricated in a predetermined second area on the surface of the substrate and an air cavity fabricated in an area between the predetermined first and second areas by etching the substrate to isolate the transmitter and receiver filters from each other. The air cavity is fabricated in the substrate perpendicular to directions along which the transmitter and receiver filters are disposed. Accordingly, physical effects among elements can be effectively intercepted.

Abstract: In a fluxgate sensor integrated in a semiconductor substrate and a method for manufacturing the same, the fluxgate sensor includes a soft magnetic core formed on the semiconductor substrate, an excitation coil winding the soft magnetic core and being insulated by first and second insulating layers deposited above and below the soft magnetic core, respectively, and a pick-up coil, winding the soft magnetic core and being insulated by third and fourth insulating layers deposited above and below the excitation coil, respectively.

Abstract: A method for manufacturing a metal structure using a trench includes etching a semiconductor substrate to form a trench, depositing a seed layer over the semiconductor substrate including in the trench, stacking an insulating layer over the seed layer, removing a portion of the insulating layer to expose a portion of the seed layer at a bottom of the trench, filling the trench with a metal material, and removing the seed layer and the insulating layer on the semiconductor substrate. As a result, a subsequent process in forming a multi-layered structure may be easily carried out, thereby simplifying a manufacturing process.

Abstract: An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material.

Abstract: Disclosed is a magnetic field sensor of high sensitivity, and which is power-saving and can be manufactured with low cost in a very small size. The magnetic field sensor includes a soft magnetic core formed to construct a closed-magnetic circuit on a semiconductor substrate, a magnetic field sensing coil formed by a metal film in a shape that winds the soft magnetic core, and a drive line for exciting the soft magnetic core by directly applying an electric current thereto. The drive line is formed in a rectangular angle to the magnetic field sensing coil, and connected to the both ends of the soft magnetic core in a length direction.

Abstract: Disclosed is a magnetic field sensor of high sensitivity, and which is power-saving and can be manufactured with low cost in a very small size. The magnetic field sensor includes a soft magnetic core formed to construct a closed-magnetic circuit on a semiconductor substrate, a magnetic field sensing coil formed by a metal film in a shape that winds the soft magnetic core, and a drive line for exciting the soft magnetic core by directly applying an electric current thereto. The drive line is formed in a rectangular angle to the magnetic field sensing coil, and connected to the both ends of the soft magnetic core in a length direction.