Abstract: A memory system includes a memory cell array and a controller coupled to the memory cell array. The controller is configured to control applying a first program voltage to a word line to program memory cells in the memory cell array, the memory cells being coupled to the word line, and in response to receiving a suspend command, control applying a positive bias discharge voltage to the word line when the first program voltage ramps down.

Abstract: The secondary amide contained in the extraction system consists of a single compound or a mixture of two or more compounds, wherein R1 is selected from a C2˜C12 alkyl, or a C3˜C12 cycloalkyl containing a single-ring structure, R2 is selected from a C1˜C11 alkyl, or a C3˜C11 cycloalkyl containing a single-ring structure; the total number of carbon atoms in the molecule is 12˜18. With a volume ratio of an organic phase and a brine phase being 1˜10:1, at a brine density of 1.25˜1.38 g/cm3 and at a temperature of 0˜50° C., a single-stage or multi-stage countercurrent extraction and a stripping are conducted to obtain a water phase with a low magnesium-lithium ratio, which is subjected to concentration, impurity removal and preparation to get lithium chloride, lithium carbonate and lithium hydroxide respectively. Water is used for stripping, greatly reducing the consumption of acid and base, and the separation process is shortened.

Abstract: Embodiments of erasing methods for a three-dimensional (3D) memory device are disclosed. The 3D memory device includes multiple decks vertically stacked over a substrate, wherein each deck includes a plurality of memory cells. The erasing method includes checking states of the plurality of memory cells of an erase-inhibit deck and preparing the erase-inhibit deck according to the states of the plurality of memory cells. The erasing method also includes applying an erase voltage at an array common source, applying a hold-release voltage on unselected word lines of the erase-inhibit deck, and applying a low voltage on selected word lines of a target deck.

Abstract: A system for millimeter wave-based fire detecting and rescuing and a method thereof are provided, the system including: an environmental obtaining device, a millimeter wave detector, a wireless transmitter, and a monitoring terminal, which are interconnected and arranged in an environment. The environmental obtaining device is configured to collect environmental information and send the environmental information to the wireless transmitter when the environmental information is determined to include fire information. The millimeter wave detector is configured to perform all-weather scanning on the environment to obtain characteristics and location information of a living organism in the environment, and send the characteristics and location information to the wireless transmitter. The wireless transmitter is configured to report the above information to the monitoring terminal through a millimeter wave, and the monitoring terminal stores the characteristics and location information.

Abstract: The present disclosure relates to an ignition interlock device and system for accurately detecting a drunk driver by running an interactive visual test presented for the driver to visualize on a screen of the alcolock device, which further comprises at least an eye gaze tracking module for recording eye movements and measuring gaze data, and a motor skill computing module for computing motion parameters from the sensor data measured during the interactive visual test. The alcolock device may further comprise a drunk detection module for measuring drunkenness of the driver by mapping gaze parameters and motion parameters to measure the mismatch between motor skills and cognitive processing performance, and a decision module for allowing the driver to drive the vehicle, or not, based on the measured drunkenness.

Abstract: A control method, for a memory array, the control method comprises programming the bit-cell of the memory array in a programming stage; and discharging the bit-cell of the memory array in a discharge stage; wherein the programming stage comprises: programming the bit-cell of the memory array with a plurality of programming voltage pulses; wherein the discharge stage comprises: isolating a select line of the bit-cell of the memory array; and generating a programming voltage pulse to the bit-cell of the memory array; wherein the programming stage can be suspended to a suspend stage by a suspend command after the discharge stage; wherein the suspend command is received during one of the plurality of programming voltage pulse.

Abstract: A memory device includes a plurality of memory cells arranged in a plurality of rows and a plurality of strings. A method of programming the memory device includes programming a first row of the memory cells. The method also includes, after programing the first row of the memory cells, programming a second row of the memory cells. The second row is adjacent to the first row in a first string direction. The method further includes, after programming the second row of the memory cells, programming a third row of the memory cells. The third row is two rows apart from the second row in a second string direction opposite to the first string direction.

Abstract: Embodiments of erasing methods for a three-dimensional (3D) memory device are disclosed. The 3D memory device includes multiple decks vertically stacked over a substrate, wherein each deck includes a plurality of memory cells. The erasing method includes checking states of the plurality of memory cells of an erase-inhibit deck and preparing the erase-inhibit deck according to the states of the plurality of memory cells. The erasing method also includes applying an erase voltage at an array common source, applying a hold-release voltage on unselected word lines of the erase-inhibit deck, and applying a low voltage on selected word lines of a target deck.

Abstract: In certain aspects, a memory device includes a memory string including a drain select gate (DSG) transistor, a plurality of memory cells, and a source select gate (SSG) transistor, and a peripheral circuit coupled to the memory string. The peripheral circuit is configured to in response to an interrupt during a program operation on a select memory cell of the plurality of memory cells, turn on at least one of the DSG transistor or the SSG transistor. The peripheral circuit is also configured to suspend the program operation after turning on the at least one of the DSG transistor or the SSG transistor.

Abstract: A method for programming a memory device including a first plane and a second plane is provided. The method includes simultaneously initiating programming of the first plane and the second plane, and in response to the first plane being successfully programmed and the second plane not being successfully programmed, suspending the programming of the first plane, and keeping the programming of the second plane.

Abstract: A memory device includes a plurality of memory cells arranged in a plurality of rows and a plurality of strings. A method of programming the memory device includes programming a first row of the memory cells. The method also includes, after programing the first row of the memory cells, programming a second row of the memory cells. The second row is adjacent to the first row in a first string direction. The method further includes, after programming the second row of the memory cells, programming a third row of the memory cells. The third row is two rows apart from the second row in a second string direction opposite to the first string direction.

Abstract: A control method, for a memory array, the control method comprises programming the bit-cell of the memory array in a programming stage; and discharging the bit-cell of the memory array in a discharge stage; wherein the programming stage comprises: programming the bit-cell of the memory array with a plurality of programming voltage pulses; wherein the discharge stage comprises: isolating a select line of the bit-cell of the memory array; and generating a programming voltage pulse to the bit-cell of the memory array; wherein the programming stage can be suspended to a suspend stage by a suspend command after the discharge stage; wherein the suspend command is received during one of the plurality of programming voltage pulse.

Abstract: The present disclosure relates to a wireless communication technology, and provides a method for adjusting an antenna parameter, a radio device, and an apparatus with a storage function. The method may include: acquiring a target environmental data set, wherein the target environmental data set includes environmental data of an antenna assembly in a current location; comparing the target environmental data set with an environmental data set corresponding to a preset scene; determining a first preset scene to which an antenna assembly corresponding to the target environment data set belongs, to obtain a preset antenna parameter corresponding to the first preset scene, and setting a parameter of the antenna assembly for a radio signal to the preset antenna parameter, wherein the first preset scene is a preset scene to which the current location of the antenna assembly belongs.

Abstract: A programming method for a memory device includes simultaneously starting to program a first plane and a second plane; and bypassing the first plane and keeping programming the second plane when the first plane has been programmed successfully and the second plane has not been programmed successfully yet.

Abstract: Disclosed are a compound as shown in formula (I) or optical isomers, pharmaceutically acceptable salts, prodrugs, hydrates or solvates thereof, wherein R1-R10 are independently selected from H and D, respectively, and not all are H. Compared to the undeuterated control compound MGL3 196, the compound of formula (I) or the optical isomers, pharmaceutically acceptable salts, prodrugs, hydrates or solvates thereof has/have better agonistic activity on thyroid hormone receptor p (THR-p), has/have a longer half-life and a lower clearance rate, has/have better metabolic stability and pharmacokinetic properties, and has/have excellent application prospects in the preparation of THR-p agonists and drugs for treating indications to which THR-p agonists are applicable, including dyslipidemia, hypercholesterolemia, nonalcoholic steatohepatitis (NASH) and nonalcoholic fatty liver disease (NAFLD).

Abstract: A filtering method and apparatus are provided, and the method includes: performing spectrum shifting on a first signal to obtain a second signal, where the first signal includes a first valid signal band and a first to-be-suppressed signal band, a demarcation point of the first valid signal band and the first to-be-suppressed signal band in the first signal is a first boundary point, the first boundary point corresponds to a second boundary point in the second signal, a frequency of the second boundary point is equal to a frequency of a first side frequency point of the filter, and a frequency range corresponding to the first valid signal band in the second signal falls within a frequency range corresponding to a passband of the filter (S301); and filtering the second signal by using the filter, to obtain the first valid signal band (S302).

Abstract: Devices and methods related to a chitosan-enhanced melamine sponge are provided. A method comprises grafting chitosan on the melamine sponge matrix via the chemical with two or more carboxyl groups; and crosslinking the chitosan with crosslinker under a heating procedure to make a more robust melamine sponge with a larger surface and smaller pores. The chitosan-enhanced melamine sponge is used to separate chemicals from water as a gravity flow-driven filter, and it can be compressed and backwashed for regeneration.

Abstract: A programming method for a memory device includes simultaneously starting to program a first plane and a second plane; and bypassing the first plane and keeping programming the second plane when the first plane has been programmed successfully and the second plane has not been programmed successfully yet.

Abstract: A memory system includes a plurality of memory cells, and the memory cells are multiple-level cells. The memory system performs program operations to program the memory cells. After each program operation, at least one threshold voltage test is performed to determine if threshold voltages of the memory cells are greater than the verification voltage. When the threshold voltage of a first memory cell is determined to be greater than a first verification voltage, the first memory cell will be inhibited from being programmed during the next program operation. When the threshold voltage of a second memory cell is determined to newly become greater than a second verification voltage, where the second verification voltage is greater than the first verification voltage, the second memory cell will be programmed again during the next program operation.

Abstract: A memory system includes a plurality of blocks of memory blocks, each including a plurality of memory cells. The method for programming the memory system includes during a program process, performing a first program operation to program a first memory block, waiting for a delay time after the first program operation is completed, after waiting for the delay time, performing an all-level threshold voltage test to determine if threshold voltages of the first memory block are greater than corresponding threshold voltages, and performing a second program operation to program the first memory block according to a result of the all-level threshold voltage test.